CN1198841A - 自对准局域深扩散发射极太阳能电池 - Google Patents
自对准局域深扩散发射极太阳能电池 Download PDFInfo
- Publication number
- CN1198841A CN1198841A CN96197446A CN96197446A CN1198841A CN 1198841 A CN1198841 A CN 1198841A CN 96197446 A CN96197446 A CN 96197446A CN 96197446 A CN96197446 A CN 96197446A CN 1198841 A CN1198841 A CN 1198841A
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- China
- Prior art keywords
- aluminium
- emitter
- layer
- forms
- emitter regions
- Prior art date
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 238000002161 passivation Methods 0.000 claims abstract description 19
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 239000004332 silver Substances 0.000 claims abstract description 9
- 239000004411 aluminium Substances 0.000 claims description 41
- 239000002019 doping agent Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910000676 Si alloy Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 26
- 229910052751 metal Inorganic materials 0.000 abstract description 14
- 239000002184 metal Substances 0.000 abstract description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 8
- 238000007650 screen-printing Methods 0.000 abstract description 8
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 239000006117 anti-reflective coating Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 17
- 150000001875 compounds Chemical class 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003434 inspiratory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (30)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US483395P | 1995-10-05 | 1995-10-05 | |
US60/004,833 | 1995-10-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1198841A true CN1198841A (zh) | 1998-11-11 |
CN1155107C CN1155107C (zh) | 2004-06-23 |
Family
ID=21712748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB96197446XA Expired - Lifetime CN1155107C (zh) | 1995-10-05 | 1996-10-01 | 具有自对准局域深扩散发射极的太阳能电池及其制造方法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US5928438A (zh) |
EP (1) | EP0853822A4 (zh) |
JP (1) | JPH11512886A (zh) |
KR (1) | KR19990063990A (zh) |
CN (1) | CN1155107C (zh) |
AU (1) | AU701213B2 (zh) |
BR (1) | BR9610739A (zh) |
CA (1) | CA2232857C (zh) |
TW (1) | TW332345B (zh) |
WO (1) | WO1997013280A1 (zh) |
Cited By (15)
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CN101305471B (zh) * | 2005-11-02 | 2010-09-08 | 森托塞姆光伏股份有限公司 | 用于制造太阳能电池上的抗反射覆层的方法 |
CN102214709A (zh) * | 2010-04-02 | 2011-10-12 | Lg电子株式会社 | 选择性发射极太阳能电池 |
CN102593204A (zh) * | 2011-01-10 | 2012-07-18 | Lg电子株式会社 | 太阳能电池和制造该太阳能电池的方法 |
CN1883012B (zh) * | 2003-11-18 | 2012-08-08 | 默克专利有限公司 | 功能性糊 |
CN102725854A (zh) * | 2009-11-18 | 2012-10-10 | 太阳能和风能科技公司 | 制造光伏电池的方法、由此产生的光伏电池及其应用 |
CN102859712A (zh) * | 2010-04-20 | 2013-01-02 | 京瓷株式会社 | 太阳能电池元件及使用该太阳能电池元件的太阳能电池模块 |
CN102893411A (zh) * | 2010-06-25 | 2013-01-23 | 京瓷株式会社 | 太阳能电池元件及该太阳能电池元件的制造方法以及太阳能电池模块 |
CN103329280A (zh) * | 2010-12-06 | 2013-09-25 | 信越化学工业株式会社 | 太阳能电池和太阳能电池模件 |
CN101828267B (zh) * | 2008-08-07 | 2013-10-23 | 京都一来电子化学股份有限公司 | 太阳能电池元件的电极形成用导电性糊料及太阳能电池元件以及该太阳能电池元件的制造方法 |
CN102122677B (zh) * | 2006-08-25 | 2013-11-06 | 三洋电机株式会社 | 太阳能电池模块以及太阳能电池模块的制造方法 |
CN103956410A (zh) * | 2014-05-09 | 2014-07-30 | 苏州阿特斯阳光电力科技有限公司 | 一种n型背结太阳能电池的制备方法 |
CN104040701A (zh) * | 2012-01-06 | 2014-09-10 | 日立化成株式会社 | 带钝化膜的半导体基板及其制造方法、以及太阳能电池元件及其制造方法 |
CN106887473A (zh) * | 2015-12-16 | 2017-06-23 | 茂迪股份有限公司 | 太阳能电池及其制造方法 |
CN109065641A (zh) * | 2013-12-09 | 2018-12-21 | 太阳能公司 | 使用自对准注入和封盖制造太阳能电池发射极区 |
CN109888058A (zh) * | 2019-03-04 | 2019-06-14 | 浙江正泰太阳能科技有限公司 | 一种太阳能电池及其制造方法 |
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US6180869B1 (en) * | 1997-05-06 | 2001-01-30 | Ebara Solar, Inc. | Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices |
US6339013B1 (en) | 1997-05-13 | 2002-01-15 | The Board Of Trustees Of The University Of Arkansas | Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells |
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US6262359B1 (en) * | 1999-03-17 | 2001-07-17 | Ebara Solar, Inc. | Aluminum alloy back junction solar cell and a process for fabrication thereof |
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KR100366349B1 (ko) * | 2001-01-03 | 2002-12-31 | 삼성에스디아이 주식회사 | 태양 전지 및 그의 제조 방법 |
KR100420030B1 (ko) * | 2001-04-23 | 2004-02-25 | 삼성에스디아이 주식회사 | 태양 전지의 제조 방법 |
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- 1996-10-01 EP EP96933220A patent/EP0853822A4/en not_active Withdrawn
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- 1996-10-01 KR KR1019980702465A patent/KR19990063990A/ko not_active Application Discontinuation
- 1996-10-01 AU AU72039/96A patent/AU701213B2/en not_active Expired
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Also Published As
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---|---|
US5928438A (en) | 1999-07-27 |
KR19990063990A (ko) | 1999-07-26 |
JPH11512886A (ja) | 1999-11-02 |
CA2232857C (en) | 2003-05-13 |
MX9802174A (es) | 1998-08-30 |
AU7203996A (en) | 1997-04-28 |
EP0853822A4 (en) | 1999-08-18 |
WO1997013280A1 (en) | 1997-04-10 |
CA2232857A1 (en) | 1997-04-10 |
BR9610739A (pt) | 1999-07-13 |
CN1155107C (zh) | 2004-06-23 |
AU701213B2 (en) | 1999-01-21 |
TW332345B (en) | 1998-05-21 |
EP0853822A1 (en) | 1998-07-22 |
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