JPH11261010A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPH11261010A
JPH11261010A JP10063046A JP6304698A JPH11261010A JP H11261010 A JPH11261010 A JP H11261010A JP 10063046 A JP10063046 A JP 10063046A JP 6304698 A JP6304698 A JP 6304698A JP H11261010 A JPH11261010 A JP H11261010A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
electronic circuit
semiconductor
semiconductor device
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10063046A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11261010A5 (enExample
Inventor
Shigenobu Maeda
茂伸 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10063046A priority Critical patent/JPH11261010A/ja
Priority to TW087113300A priority patent/TW452867B/zh
Priority to US09/139,412 priority patent/US6133625A/en
Priority to FR9811805A priority patent/FR2776124B1/fr
Priority to DE19845294A priority patent/DE19845294B4/de
Priority to KR1019980044988A priority patent/KR100306858B1/ko
Publication of JPH11261010A publication Critical patent/JPH11261010A/ja
Priority to US09/500,008 priority patent/US6248657B1/en
Publication of JPH11261010A5 publication Critical patent/JPH11261010A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H10W72/019—
    • H10W42/00—
    • H10W72/90—
    • H10W70/60—
    • H10W72/07533—
    • H10W72/07553—
    • H10W72/29—
    • H10W72/531—
    • H10W72/536—
    • H10W72/5445—
    • H10W72/5522—
    • H10W72/5524—
    • H10W72/59—
    • H10W72/9232—
    • H10W72/932—
    • H10W72/934—
    • H10W72/952—
    • H10W74/00—
    • H10W90/722—
    • H10W90/753—
    • H10W90/756—

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP10063046A 1998-03-13 1998-03-13 半導体装置及びその製造方法 Pending JPH11261010A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP10063046A JPH11261010A (ja) 1998-03-13 1998-03-13 半導体装置及びその製造方法
TW087113300A TW452867B (en) 1998-03-13 1998-08-13 Semiconductor device and method for manufacturing the same
US09/139,412 US6133625A (en) 1998-03-13 1998-08-25 Semiconductor device and method for manufacturing the same
FR9811805A FR2776124B1 (fr) 1998-03-13 1998-09-22 Dispositif semiconducteur a diode et procede de fabrication
DE19845294A DE19845294B4 (de) 1998-03-13 1998-10-01 Halbleitervorrichtung und Herstellungsverfahren einer Halbleitervorrichtung
KR1019980044988A KR100306858B1 (ko) 1998-03-13 1998-10-27 반도체장치및그제조방법
US09/500,008 US6248657B1 (en) 1998-03-13 2000-02-08 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10063046A JPH11261010A (ja) 1998-03-13 1998-03-13 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPH11261010A true JPH11261010A (ja) 1999-09-24
JPH11261010A5 JPH11261010A5 (enExample) 2005-09-02

Family

ID=13218010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10063046A Pending JPH11261010A (ja) 1998-03-13 1998-03-13 半導体装置及びその製造方法

Country Status (6)

Country Link
US (2) US6133625A (enExample)
JP (1) JPH11261010A (enExample)
KR (1) KR100306858B1 (enExample)
DE (1) DE19845294B4 (enExample)
FR (1) FR2776124B1 (enExample)
TW (1) TW452867B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6376881B1 (en) * 1999-11-18 2002-04-23 Oki Electric Industry Co., Ltd. Protective element formed in an SOI substrate for preventing a breakdown in an oxide film located below a diffused resistor
JP2008199045A (ja) * 2008-03-19 2008-08-28 Seiko Epson Corp 半導体装置およびその製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4651815B2 (ja) * 1998-01-23 2011-03-16 ローム株式会社 ダマシン配線および半導体装置
US6613986B1 (en) * 1998-09-17 2003-09-02 Ibiden Co., Ltd. Multilayer build-up wiring board
JP2974022B1 (ja) 1998-10-01 1999-11-08 ヤマハ株式会社 半導体装置のボンディングパッド構造
JP2002016065A (ja) * 2000-06-29 2002-01-18 Toshiba Corp 半導体装置
US6887786B2 (en) * 2002-05-14 2005-05-03 Applied Materials, Inc. Method and apparatus for forming a barrier layer on a substrate
EP1519411A3 (en) * 2003-09-26 2010-01-13 Panasonic Corporation Semiconductor device and method for fabricating the same
US7808115B2 (en) * 2004-05-03 2010-10-05 Broadcom Corporation Test circuit under pad
US7691127B2 (en) * 2005-12-13 2010-04-06 Cardiva Medical, Inc. Drug eluting vascular closure devices and methods
DE102007016257A1 (de) * 2007-04-04 2008-10-09 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung eines elektrischen Trägerscheibenkontaktes mit vorderseitigem Anschluss

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60247940A (ja) * 1984-05-23 1985-12-07 Hitachi Ltd 半導体装置およびその製造方法
JPS6144454A (ja) * 1984-08-09 1986-03-04 Fujitsu Ltd 半導体装置
JPH077783B2 (ja) * 1988-03-18 1995-01-30 株式会社東芝 電気的接続部に銅もしくは銅合金製金属細線を配置する半導体装置
US5719448A (en) * 1989-03-07 1998-02-17 Seiko Epson Corporation Bonding pad structures for semiconductor integrated circuits
JP2617798B2 (ja) * 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
US5113236A (en) * 1990-12-14 1992-05-12 North American Philips Corporation Integrated circuit device particularly adapted for high voltage applications
JP2550248B2 (ja) * 1991-10-14 1996-11-06 株式会社東芝 半導体集積回路装置およびその製造方法
JP3211351B2 (ja) * 1992-04-08 2001-09-25 関西日本電気株式会社 半導体装置
US5854085A (en) * 1992-06-04 1998-12-29 Lsi Logic Corporation Multi-layer tab tape having distinct signal, power and ground planes, semiconductor device assembly employing same, apparatus for and method of assembling same
JP3124144B2 (ja) * 1993-01-27 2001-01-15 株式会社東芝 半導体装置
JP2944840B2 (ja) * 1993-03-12 1999-09-06 株式会社日立製作所 電力用半導体装置
DE69417944T2 (de) * 1993-04-30 1999-12-09 International Business Machines Corp., Armonk Verfahren zum Herstellen einer Schutzdiode gegen elektrostatische Entladungen in der Silizium-auf-Insulator-Technologie
JPH077820A (ja) * 1993-06-18 1995-01-10 Takaoka Electric Mfg Co Ltd 配電盤
DE69330603T2 (de) * 1993-09-30 2002-07-04 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Verfahren zur Metallisierung und Verbindung bei der Herstellung von Leistungshalbleiterbauelementen
US5382818A (en) * 1993-12-08 1995-01-17 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a buried diode
JP2755148B2 (ja) * 1993-12-28 1998-05-20 ヤマハ株式会社 半導体装置
JPH07312424A (ja) * 1994-05-18 1995-11-28 Nippondenso Co Ltd 半導体装置及びその製造方法
JPH0888323A (ja) * 1994-09-19 1996-04-02 Nippondenso Co Ltd 半導体集積回路装置
JP4319251B2 (ja) * 1994-11-22 2009-08-26 エヌエックスピー ビー ヴィ 半導体素子を有し導体トラックが形成されている基板が接着層により結合されている支持本体を有する半導体装置
US5661082A (en) * 1995-01-20 1997-08-26 Motorola, Inc. Process for forming a semiconductor device having a bond pad
JPH0923017A (ja) * 1995-07-06 1997-01-21 Mitsubishi Electric Corp Ｓｏｉ入力保護回路
US5700735A (en) * 1996-08-22 1997-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming bond pad structure for the via plug process
JP3305211B2 (ja) * 1996-09-10 2002-07-22 松下電器産業株式会社 半導体装置及びその製造方法
US5763918A (en) * 1996-10-22 1998-06-09 International Business Machines Corp. ESD structure that employs a schottky-barrier to reduce the likelihood of latch-up

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6376881B1 (en) * 1999-11-18 2002-04-23 Oki Electric Industry Co., Ltd. Protective element formed in an SOI substrate for preventing a breakdown in an oxide film located below a diffused resistor
US6524898B2 (en) * 1999-11-18 2003-02-25 Oki Electric Industry Co., Ltd. Method of fabricating a protective element in an SOI substrate
US6784497B2 (en) 1999-11-18 2004-08-31 Oki Electric Industry, Co., Ltd. Semiconductor device
JP2008199045A (ja) * 2008-03-19 2008-08-28 Seiko Epson Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US6248657B1 (en) 2001-06-19
DE19845294A1 (de) 1999-09-23
DE19845294B4 (de) 2005-11-03
TW452867B (en) 2001-09-01
US6133625A (en) 2000-10-17
FR2776124B1 (fr) 2002-08-30
FR2776124A1 (fr) 1999-09-17
KR19990076526A (ko) 1999-10-15
KR100306858B1 (ko) 2001-11-17

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