FR2776124B1 - Dispositif semiconducteur a diode et procede de fabrication - Google Patents

Dispositif semiconducteur a diode et procede de fabrication

Info

Publication number
FR2776124B1
FR2776124B1 FR9811805A FR9811805A FR2776124B1 FR 2776124 B1 FR2776124 B1 FR 2776124B1 FR 9811805 A FR9811805 A FR 9811805A FR 9811805 A FR9811805 A FR 9811805A FR 2776124 B1 FR2776124 B1 FR 2776124B1
Authority
FR
France
Prior art keywords
diode
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9811805A
Other languages
English (en)
French (fr)
Other versions
FR2776124A1 (fr
Inventor
Shigenobu Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2776124A1 publication Critical patent/FR2776124A1/fr
Application granted granted Critical
Publication of FR2776124B1 publication Critical patent/FR2776124B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10W72/019—
    • H10W42/00—
    • H10W72/90—
    • H10W70/60—
    • H10W72/07533—
    • H10W72/07553—
    • H10W72/29—
    • H10W72/531—
    • H10W72/536—
    • H10W72/5445—
    • H10W72/5522—
    • H10W72/5524—
    • H10W72/59—
    • H10W72/9232—
    • H10W72/932—
    • H10W72/934—
    • H10W72/952—
    • H10W74/00—
    • H10W90/722—
    • H10W90/753—
    • H10W90/756—
FR9811805A 1998-03-13 1998-09-22 Dispositif semiconducteur a diode et procede de fabrication Expired - Fee Related FR2776124B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10063046A JPH11261010A (ja) 1998-03-13 1998-03-13 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
FR2776124A1 FR2776124A1 (fr) 1999-09-17
FR2776124B1 true FR2776124B1 (fr) 2002-08-30

Family

ID=13218010

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9811805A Expired - Fee Related FR2776124B1 (fr) 1998-03-13 1998-09-22 Dispositif semiconducteur a diode et procede de fabrication

Country Status (6)

Country Link
US (2) US6133625A (enExample)
JP (1) JPH11261010A (enExample)
KR (1) KR100306858B1 (enExample)
DE (1) DE19845294B4 (enExample)
FR (1) FR2776124B1 (enExample)
TW (1) TW452867B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4651815B2 (ja) * 1998-01-23 2011-03-16 ローム株式会社 ダマシン配線および半導体装置
US6613986B1 (en) * 1998-09-17 2003-09-02 Ibiden Co., Ltd. Multilayer build-up wiring board
JP2974022B1 (ja) 1998-10-01 1999-11-08 ヤマハ株式会社 半導体装置のボンディングパッド構造
JP3217336B2 (ja) * 1999-11-18 2001-10-09 株式会社 沖マイクロデザイン 半導体装置
JP2002016065A (ja) * 2000-06-29 2002-01-18 Toshiba Corp 半導体装置
US6887786B2 (en) * 2002-05-14 2005-05-03 Applied Materials, Inc. Method and apparatus for forming a barrier layer on a substrate
EP1519411A3 (en) * 2003-09-26 2010-01-13 Panasonic Corporation Semiconductor device and method for fabricating the same
US7808115B2 (en) * 2004-05-03 2010-10-05 Broadcom Corporation Test circuit under pad
US7691127B2 (en) * 2005-12-13 2010-04-06 Cardiva Medical, Inc. Drug eluting vascular closure devices and methods
DE102007016257A1 (de) * 2007-04-04 2008-10-09 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung eines elektrischen Trägerscheibenkontaktes mit vorderseitigem Anschluss
JP2008199045A (ja) * 2008-03-19 2008-08-28 Seiko Epson Corp 半導体装置およびその製造方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60247940A (ja) * 1984-05-23 1985-12-07 Hitachi Ltd 半導体装置およびその製造方法
JPS6144454A (ja) * 1984-08-09 1986-03-04 Fujitsu Ltd 半導体装置
JPH077783B2 (ja) * 1988-03-18 1995-01-30 株式会社東芝 電気的接続部に銅もしくは銅合金製金属細線を配置する半導体装置
US5719448A (en) * 1989-03-07 1998-02-17 Seiko Epson Corporation Bonding pad structures for semiconductor integrated circuits
JP2617798B2 (ja) * 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
US5113236A (en) * 1990-12-14 1992-05-12 North American Philips Corporation Integrated circuit device particularly adapted for high voltage applications
JP2550248B2 (ja) * 1991-10-14 1996-11-06 株式会社東芝 半導体集積回路装置およびその製造方法
JP3211351B2 (ja) * 1992-04-08 2001-09-25 関西日本電気株式会社 半導体装置
US5854085A (en) * 1992-06-04 1998-12-29 Lsi Logic Corporation Multi-layer tab tape having distinct signal, power and ground planes, semiconductor device assembly employing same, apparatus for and method of assembling same
JP3124144B2 (ja) * 1993-01-27 2001-01-15 株式会社東芝 半導体装置
JP2944840B2 (ja) * 1993-03-12 1999-09-06 株式会社日立製作所 電力用半導体装置
DE69417944T2 (de) * 1993-04-30 1999-12-09 International Business Machines Corp., Armonk Verfahren zum Herstellen einer Schutzdiode gegen elektrostatische Entladungen in der Silizium-auf-Insulator-Technologie
JPH077820A (ja) * 1993-06-18 1995-01-10 Takaoka Electric Mfg Co Ltd 配電盤
DE69330603T2 (de) * 1993-09-30 2002-07-04 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Verfahren zur Metallisierung und Verbindung bei der Herstellung von Leistungshalbleiterbauelementen
US5382818A (en) * 1993-12-08 1995-01-17 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a buried diode
JP2755148B2 (ja) * 1993-12-28 1998-05-20 ヤマハ株式会社 半導体装置
JPH07312424A (ja) * 1994-05-18 1995-11-28 Nippondenso Co Ltd 半導体装置及びその製造方法
JPH0888323A (ja) * 1994-09-19 1996-04-02 Nippondenso Co Ltd 半導体集積回路装置
JP4319251B2 (ja) * 1994-11-22 2009-08-26 エヌエックスピー ビー ヴィ 半導体素子を有し導体トラックが形成されている基板が接着層により結合されている支持本体を有する半導体装置
US5661082A (en) * 1995-01-20 1997-08-26 Motorola, Inc. Process for forming a semiconductor device having a bond pad
JPH0923017A (ja) * 1995-07-06 1997-01-21 Mitsubishi Electric Corp Ｓｏｉ入力保護回路
US5700735A (en) * 1996-08-22 1997-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming bond pad structure for the via plug process
JP3305211B2 (ja) * 1996-09-10 2002-07-22 松下電器産業株式会社 半導体装置及びその製造方法
US5763918A (en) * 1996-10-22 1998-06-09 International Business Machines Corp. ESD structure that employs a schottky-barrier to reduce the likelihood of latch-up

Also Published As

Publication number Publication date
US6248657B1 (en) 2001-06-19
DE19845294A1 (de) 1999-09-23
DE19845294B4 (de) 2005-11-03
TW452867B (en) 2001-09-01
US6133625A (en) 2000-10-17
FR2776124A1 (fr) 1999-09-17
KR19990076526A (ko) 1999-10-15
JPH11261010A (ja) 1999-09-24
KR100306858B1 (ko) 2001-11-17

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Legal Events

Date Code Title Description
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Effective date: 20060531