JPH1065164A5 - - Google Patents

Info

Publication number
JPH1065164A5
JPH1065164A5 JP1996232553A JP23255396A JPH1065164A5 JP H1065164 A5 JPH1065164 A5 JP H1065164A5 JP 1996232553 A JP1996232553 A JP 1996232553A JP 23255396 A JP23255396 A JP 23255396A JP H1065164 A5 JPH1065164 A5 JP H1065164A5
Authority
JP
Japan
Prior art keywords
region
impurity
semiconductor device
insulated gate
crystalline semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996232553A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1065164A (ja
JP3634086B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP23255396A external-priority patent/JP3634086B2/ja
Priority to JP23255396A priority Critical patent/JP3634086B2/ja
Priority to TW086110814A priority patent/TW357386B/zh
Priority to US08/907,578 priority patent/US6653687B1/en
Priority to GB9717145A priority patent/GB2316227B/en
Priority to KR1019970039450A priority patent/KR100443437B1/ko
Publication of JPH1065164A publication Critical patent/JPH1065164A/ja
Publication of JPH1065164A5 publication Critical patent/JPH1065164A5/ja
Publication of JP3634086B2 publication Critical patent/JP3634086B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP23255396A 1996-08-13 1996-08-13 絶縁ゲイト型半導体装置の作製方法 Expired - Fee Related JP3634086B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP23255396A JP3634086B2 (ja) 1996-08-13 1996-08-13 絶縁ゲイト型半導体装置の作製方法
TW086110814A TW357386B (en) 1996-08-13 1997-07-29 Insulating gate-type semiconductor and the manufacturing method
US08/907,578 US6653687B1 (en) 1996-08-13 1997-08-08 Insulated gate semiconductor device
GB9717145A GB2316227B (en) 1996-08-13 1997-08-12 Insulated gate semiconductor device and method of manufacturing the same
KR1019970039450A KR100443437B1 (ko) 1996-08-13 1997-08-13 절연게이트형반도체장치및그제작방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23255396A JP3634086B2 (ja) 1996-08-13 1996-08-13 絶縁ゲイト型半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH1065164A JPH1065164A (ja) 1998-03-06
JPH1065164A5 true JPH1065164A5 (cg-RX-API-DMAC10.html) 2005-02-03
JP3634086B2 JP3634086B2 (ja) 2005-03-30

Family

ID=16941137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23255396A Expired - Fee Related JP3634086B2 (ja) 1996-08-13 1996-08-13 絶縁ゲイト型半導体装置の作製方法

Country Status (5)

Country Link
US (1) US6653687B1 (cg-RX-API-DMAC10.html)
JP (1) JP3634086B2 (cg-RX-API-DMAC10.html)
KR (1) KR100443437B1 (cg-RX-API-DMAC10.html)
GB (1) GB2316227B (cg-RX-API-DMAC10.html)
TW (1) TW357386B (cg-RX-API-DMAC10.html)

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EP1971288B1 (en) 2005-12-30 2013-02-13 Neurotech USA, Inc. Micronized device for the delivery of biologically active molecules and methods of use thereof
US20150024024A1 (en) * 2009-04-23 2015-01-22 Neurotech Usa, Inc. Cell Lines That Produce Prostaglandin F2 Alpha (PGF2A) And Uses Thereof
EP2486128A4 (en) * 2009-10-08 2013-10-09 Neurotech Usa Inc USE OF THE PEDF IN AN ENCAPSULATED CELL DELIVERY SYSTEM
EP2646007B1 (en) 2010-12-02 2016-12-21 Neurotech USA, Inc. Cell lines that secrete anti-angiogenic antibody-scaffolds and soluble receptors and uses thereof
US8916867B2 (en) 2011-01-20 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor element and semiconductor device
JP2015519370A (ja) 2012-05-30 2015-07-09 ニューロテック ユーエスエー， インコーポレイテッド 低温保存される植込み型細胞培養デバイスおよびその使用
EP3043836B1 (en) 2013-09-11 2023-05-10 Neurotech USA, Inc. Encapsulated cell therapy cartridge
JP6850734B2 (ja) 2015-05-27 2021-03-31 ニューロテック ユーエスエー， インコーポレイテッド 眼の障害の処置のためのカプセル化細胞療法の使用
EP3136446A1 (en) 2015-08-28 2017-03-01 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Tft device and manufacturing method
JP2018098338A (ja) * 2016-12-13 2018-06-21 ソニーセミコンダクタソリューションズ株式会社 トンネル電界効果トランジスタ
WO2022011081A1 (en) 2020-07-09 2022-01-13 The United States Of America, As Represented By The Secretary, Department Of Health And Human Services Cell lines that produce human retinoschisin proteins and uses thereof

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