JPH1093099A5 - - Google Patents

Info

Publication number
JPH1093099A5
JPH1093099A5 JP1996269214A JP26921496A JPH1093099A5 JP H1093099 A5 JPH1093099 A5 JP H1093099A5 JP 1996269214 A JP1996269214 A JP 1996269214A JP 26921496 A JP26921496 A JP 26921496A JP H1093099 A5 JPH1093099 A5 JP H1093099A5
Authority
JP
Japan
Prior art keywords
region
semiconductor device
insulated gate
impurity
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996269214A
Other languages
English (en)
Japanese (ja)
Other versions
JP4053102B2 (ja
JPH1093099A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP26921496A priority Critical patent/JP4053102B2/ja
Priority claimed from JP26921496A external-priority patent/JP4053102B2/ja
Publication of JPH1093099A publication Critical patent/JPH1093099A/ja
Publication of JPH1093099A5 publication Critical patent/JPH1093099A5/ja
Application granted granted Critical
Publication of JP4053102B2 publication Critical patent/JP4053102B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP26921496A 1996-09-18 1996-09-18 半導体装置およびその作製方法 Expired - Fee Related JP4053102B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26921496A JP4053102B2 (ja) 1996-09-18 1996-09-18 半導体装置およびその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26921496A JP4053102B2 (ja) 1996-09-18 1996-09-18 半導体装置およびその作製方法

Publications (3)

Publication Number Publication Date
JPH1093099A JPH1093099A (ja) 1998-04-10
JPH1093099A5 true JPH1093099A5 (cg-RX-API-DMAC10.html) 2004-09-30
JP4053102B2 JP4053102B2 (ja) 2008-02-27

Family

ID=17469267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26921496A Expired - Fee Related JP4053102B2 (ja) 1996-09-18 1996-09-18 半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JP4053102B2 (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4275336B2 (ja) 2001-11-16 2009-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5439793B2 (ja) * 2008-11-06 2014-03-12 富士通株式会社 二次イオン質量分析法の深さ校正用試料、その製造方法及び二次イオン質量分析方法
KR20230154098A (ko) * 2009-10-08 2023-11-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2012157472A1 (en) * 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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