JPH10303145A5 - - Google Patents

Info

Publication number
JPH10303145A5
JPH10303145A5 JP1997108671A JP10867197A JPH10303145A5 JP H10303145 A5 JPH10303145 A5 JP H10303145A5 JP 1997108671 A JP1997108671 A JP 1997108671A JP 10867197 A JP10867197 A JP 10867197A JP H10303145 A5 JPH10303145 A5 JP H10303145A5
Authority
JP
Japan
Prior art keywords
titanium film
manufacturing
semiconductor device
silicon
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997108671A
Other languages
English (en)
Japanese (ja)
Other versions
JP4101901B2 (ja
JPH10303145A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP10867197A external-priority patent/JP4101901B2/ja
Priority to JP10867197A priority Critical patent/JP4101901B2/ja
Priority to EP98917666A priority patent/EP0928021B1/en
Priority to US09/202,714 priority patent/US6562699B1/en
Priority to PCT/JP1998/001892 priority patent/WO1998049724A1/ja
Priority to KR10-1998-0710275A priority patent/KR100399492B1/ko
Priority to DE69837909T priority patent/DE69837909T2/de
Publication of JPH10303145A publication Critical patent/JPH10303145A/ja
Priority to US10/394,024 priority patent/US7135386B2/en
Publication of JPH10303145A5 publication Critical patent/JPH10303145A5/ja
Publication of JP4101901B2 publication Critical patent/JP4101901B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP10867197A 1997-04-25 1997-04-25 半導体装置の製造方法 Expired - Fee Related JP4101901B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP10867197A JP4101901B2 (ja) 1997-04-25 1997-04-25 半導体装置の製造方法
KR10-1998-0710275A KR100399492B1 (ko) 1997-04-25 1998-04-23 실리콘층상에배선또는전극을가지는반도체장치및그배선또는전극의형성방법
US09/202,714 US6562699B1 (en) 1997-04-25 1998-04-23 Process for manufacturing semiconductor device
PCT/JP1998/001892 WO1998049724A1 (fr) 1997-04-25 1998-04-23 Procede de fabrication de dispositif a semi-conducteurs
EP98917666A EP0928021B1 (en) 1997-04-25 1998-04-23 Process for manufacturing semiconductor device
DE69837909T DE69837909T2 (de) 1997-04-25 1998-04-23 Herstellungsverfahren für ein halbleiterbauelement
US10/394,024 US7135386B2 (en) 1997-04-25 2003-03-24 Process for fabricating a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10867197A JP4101901B2 (ja) 1997-04-25 1997-04-25 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPH10303145A JPH10303145A (ja) 1998-11-13
JPH10303145A5 true JPH10303145A5 (enExample) 2005-03-17
JP4101901B2 JP4101901B2 (ja) 2008-06-18

Family

ID=14490735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10867197A Expired - Fee Related JP4101901B2 (ja) 1997-04-25 1997-04-25 半導体装置の製造方法

Country Status (6)

Country Link
US (2) US6562699B1 (enExample)
EP (1) EP0928021B1 (enExample)
JP (1) JP4101901B2 (enExample)
KR (1) KR100399492B1 (enExample)
DE (1) DE69837909T2 (enExample)
WO (1) WO1998049724A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4101901B2 (ja) * 1997-04-25 2008-06-18 シャープ株式会社 半導体装置の製造方法
GB2360292B (en) * 2000-03-15 2002-04-03 Murata Manufacturing Co Photosensitive thick film composition and electronic device using the same
US7721491B2 (en) * 2004-07-23 2010-05-25 Jennifer Appel Method and system for storing water inside buildings
US20060057853A1 (en) * 2004-09-15 2006-03-16 Manoj Mehrotra Thermal oxidation for improved silicide formation
TW200816312A (en) * 2006-09-28 2008-04-01 Promos Technologies Inc Method for forming silicide layer on a silicon surface and its use
JP5076557B2 (ja) * 2007-03-06 2012-11-21 富士通セミコンダクター株式会社 半導体装置の製造方法
US10446662B2 (en) 2016-10-07 2019-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Reducing metal gate overhang by forming a top-wide bottom-narrow dummy gate electrode
US10510851B2 (en) * 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance contact method and structure

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3095564B2 (ja) * 1992-05-29 2000-10-03 株式会社東芝 半導体装置及び半導体装置の製造方法
US3601666A (en) * 1969-08-21 1971-08-24 Texas Instruments Inc Titanium tungsten-gold contacts for semiconductor devices
US4629611A (en) * 1985-04-29 1986-12-16 International Business Machines Corporation Gas purifier for rare-gas fluoride lasers
JPS61258434A (ja) 1985-05-13 1986-11-15 Nec Corp 半導体装置の製造方法
JPH0682641B2 (ja) 1985-10-21 1994-10-19 日本電気株式会社 半導体集積回路装置の製造方法
US4690730A (en) * 1986-03-07 1987-09-01 Texas Instruments Incorporated Oxide-capped titanium silicide formation
US4981550A (en) * 1987-09-25 1991-01-01 At&T Bell Laboratories Semiconductor device having tungsten plugs
US4851358A (en) * 1988-02-11 1989-07-25 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing
US4981816A (en) * 1988-10-27 1991-01-01 General Electric Company MO/TI Contact to silicon
US5084417A (en) * 1989-01-06 1992-01-28 International Business Machines Corporation Method for selective deposition of refractory metals on silicon substrates and device formed thereby
JP2660359B2 (ja) * 1991-01-30 1997-10-08 三菱電機株式会社 半導体装置
KR970009867B1 (ko) * 1993-12-17 1997-06-18 현대전자산업 주식회사 반도체 소자의 텅스텐 실리사이드 형성방법
JPH08115890A (ja) 1994-10-17 1996-05-07 Fujitsu Ltd 半導体基板上への電極形成方法
JP2630290B2 (ja) * 1995-01-30 1997-07-16 日本電気株式会社 半導体装置の製造方法
JPH08213343A (ja) * 1995-01-31 1996-08-20 Sony Corp 半導体装置およびその製造方法
JPH08250463A (ja) 1995-03-07 1996-09-27 Nippon Steel Corp 半導体装置の製造方法
US5972790A (en) * 1995-06-09 1999-10-26 Tokyo Electron Limited Method for forming salicides
US5595784A (en) * 1995-08-01 1997-01-21 Kaim; Robert Titanium nitride and multilayers formed by chemical vapor deposition of titanium halides
US5830802A (en) * 1995-08-31 1998-11-03 Motorola Inc. Process for reducing halogen concentration in a material layer during semiconductor device fabrication
EP0793271A3 (en) * 1996-02-22 1998-12-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device having a metal silicide film and method of fabricating the same
JPH09320990A (ja) * 1996-03-25 1997-12-12 Sharp Corp 半導体装置の製造方法
US5963828A (en) * 1996-12-23 1999-10-05 Lsi Logic Corporation Method for tungsten nucleation from WF6 using titanium as a reducing agent
JP4101901B2 (ja) * 1997-04-25 2008-06-18 シャープ株式会社 半導体装置の製造方法
KR19990041688A (ko) * 1997-11-24 1999-06-15 김규현 티타늄 샐리사이드 형성 방법

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