JPH10242073A5 - - Google Patents

Info

Publication number
JPH10242073A5
JPH10242073A5 JP1997061781A JP6178197A JPH10242073A5 JP H10242073 A5 JPH10242073 A5 JP H10242073A5 JP 1997061781 A JP1997061781 A JP 1997061781A JP 6178197 A JP6178197 A JP 6178197A JP H10242073 A5 JPH10242073 A5 JP H10242073A5
Authority
JP
Japan
Prior art keywords
laser beam
laser
irradiation device
longitudinal direction
laser irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997061781A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10242073A (ja
JP4056577B2 (ja
Filing date
Publication date
Priority claimed from JP06178197A external-priority patent/JP4056577B2/ja
Priority to JP06178197A priority Critical patent/JP4056577B2/ja
Application filed filed Critical
Priority to TW087102403A priority patent/TW382741B/zh
Priority to KR10-1998-0006310A priority patent/KR100500176B1/ko
Priority to US09/032,970 priority patent/US6160827A/en
Publication of JPH10242073A publication Critical patent/JPH10242073A/ja
Priority to US09/704,386 priority patent/US6516009B1/en
Publication of JPH10242073A5 publication Critical patent/JPH10242073A5/ja
Publication of JP4056577B2 publication Critical patent/JP4056577B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP06178197A 1997-02-28 1997-02-28 レーザー照射方法 Expired - Lifetime JP4056577B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP06178197A JP4056577B2 (ja) 1997-02-28 1997-02-28 レーザー照射方法
TW087102403A TW382741B (en) 1997-02-28 1998-02-20 Apparatus and method for laser irradiation
KR10-1998-0006310A KR100500176B1 (ko) 1997-02-28 1998-02-27 레이저조사장치및레이저조사방법
US09/032,970 US6160827A (en) 1997-02-28 1998-03-02 Laser irradiating device and laser irradiating method
US09/704,386 US6516009B1 (en) 1997-02-28 2000-10-31 Laser irradiating device and laser irradiating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06178197A JP4056577B2 (ja) 1997-02-28 1997-02-28 レーザー照射方法

Publications (3)

Publication Number Publication Date
JPH10242073A JPH10242073A (ja) 1998-09-11
JPH10242073A5 true JPH10242073A5 (enExample) 2005-01-06
JP4056577B2 JP4056577B2 (ja) 2008-03-05

Family

ID=13180987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06178197A Expired - Lifetime JP4056577B2 (ja) 1997-02-28 1997-02-28 レーザー照射方法

Country Status (4)

Country Link
US (2) US6160827A (enExample)
JP (1) JP4056577B2 (enExample)
KR (1) KR100500176B1 (enExample)
TW (1) TW382741B (enExample)

Families Citing this family (73)

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JPH09234579A (ja) * 1996-02-28 1997-09-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
JP4086932B2 (ja) 1997-04-17 2008-05-14 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー処理方法
JP3462053B2 (ja) 1997-09-30 2003-11-05 株式会社半導体エネルギー研究所 ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法および半導体デバイス
JPH11186189A (ja) * 1997-12-17 1999-07-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
JP4663047B2 (ja) * 1998-07-13 2011-03-30 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
US6246524B1 (en) 1998-07-13 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device
JP2000058839A (ja) 1998-08-05 2000-02-25 Semiconductor Energy Lab Co Ltd 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法
US6393042B1 (en) 1999-03-08 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus
JP4588153B2 (ja) * 1999-03-08 2010-11-24 株式会社半導体エネルギー研究所 レーザー照射装置
JP2001023918A (ja) * 1999-07-08 2001-01-26 Nec Corp 半導体薄膜形成装置
US6567219B1 (en) 1999-08-13 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
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JP4651772B2 (ja) * 2000-02-29 2011-03-16 株式会社半導体エネルギー研究所 レーザー照射装置
US6830993B1 (en) * 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
TW523791B (en) 2000-09-01 2003-03-11 Semiconductor Energy Lab Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device
AU2002211507A1 (en) 2000-10-10 2002-04-22 The Trustees Of Columbia University In The City Of New York Method and apparatus for processing thin metal layers
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US6830994B2 (en) * 2001-03-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a crystallized semiconductor film
TW552645B (en) 2001-08-03 2003-09-11 Semiconductor Energy Lab Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device
KR100885904B1 (ko) * 2001-08-10 2009-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 어닐링장치 및 반도체장치의 제작방법
JP3977038B2 (ja) 2001-08-27 2007-09-19 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
JP4397571B2 (ja) 2001-09-25 2010-01-13 株式会社半導体エネルギー研究所 レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
TWI289896B (en) 2001-11-09 2007-11-11 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
US7026227B2 (en) * 2001-11-16 2006-04-11 Semiconductor Energy Laboratory Co., Ltd. Method of irradiating a laser beam, and method of fabricating semiconductor devices
US7105048B2 (en) * 2001-11-30 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US7133737B2 (en) * 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
US6849825B2 (en) * 2001-11-30 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US6841434B2 (en) * 2002-03-26 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US6984573B2 (en) * 2002-06-14 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and apparatus
TWI331803B (en) * 2002-08-19 2010-10-11 Univ Columbia A single-shot semiconductor processing system and method having various irradiation patterns
US7622370B2 (en) 2002-08-19 2009-11-24 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and a structure of such film regions
JP4278940B2 (ja) 2002-09-09 2009-06-17 株式会社 液晶先端技術開発センター 結晶化装置および結晶化方法
JP5164378B2 (ja) * 2003-02-19 2013-03-21 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 逐次的横方向結晶化技術を用いて結晶化させた複数の半導体薄膜フィルムを処理するシステム及びプロセス
JP4583004B2 (ja) 2003-05-21 2010-11-17 株式会社 日立ディスプレイズ アクティブ・マトリクス基板の製造方法
JP4152806B2 (ja) * 2003-05-28 2008-09-17 株式会社半導体エネルギー研究所 レーザ光照射装置
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
TWI359441B (en) 2003-09-16 2012-03-01 Univ Columbia Processes and systems for laser crystallization pr
TWI351713B (en) * 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
WO2005029547A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
WO2005029546A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
JP4579575B2 (ja) * 2004-05-14 2010-11-10 株式会社半導体エネルギー研究所 レーザ照射方法及びレーザ照射装置
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
CN101288155A (zh) * 2005-08-16 2008-10-15 纽约市哥伦比亚大学事事会 高生产率的薄膜结晶过程
WO2007049525A1 (en) 2005-10-26 2007-05-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and manufacturing method of semiconductor device
TW200733240A (en) * 2005-12-05 2007-09-01 Univ Columbia Systems and methods for processing a film, and thin films
US7563661B2 (en) * 2006-02-02 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus
KR20100074193A (ko) * 2007-09-21 2010-07-01 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막 트랜지스터에서 사용되는 측면 결정화된 반도체 섬의 집합
KR20100074179A (ko) 2007-09-25 2010-07-01 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 측방향으로 결정화된 박막상에 제조된 박막 트랜지스터 장치에 높은 균일성을 생산하기 위한 방법
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
JP5443377B2 (ja) * 2007-11-21 2014-03-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク エピタキシャルに配向された厚膜を調製するための調製システムおよび方法
CN104835725B (zh) 2008-01-07 2018-01-26 株式会社 Ihi 激光退火方法以及装置
EP2248155A4 (en) * 2008-02-29 2011-10-05 Univ Columbia FLASH LIGHT-RECOGNIZED FOR THIN FILMS
KR20100132020A (ko) * 2008-02-29 2010-12-16 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 균일한 결정질 ｓｉ 막들을 제조하는 리소그래피 방법
US8569155B2 (en) * 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
KR101161630B1 (ko) 2008-06-12 2012-07-02 가부시키가이샤 아이에이치아이 레이저 어닐링 방법 및 레이저 어닐링 장치
DE102008029622B4 (de) * 2008-06-23 2018-05-09 Ihi Corporation Laserglühverfahren und Laserglühvorrichtung
CN102232239A (zh) 2008-11-14 2011-11-02 纽约市哥伦比亚大学理事会 用于薄膜结晶的系统和方法
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
CN103870999A (zh) * 2014-02-25 2014-06-18 国家电网公司 一种基于旋转经验正交分解的辐照度区域划分方法
KR102388723B1 (ko) * 2015-08-07 2022-04-21 삼성디스플레이 주식회사 레이저 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법
US20240120198A1 (en) * 2021-01-29 2024-04-11 Jsw Aktina System Co., Ltd. Conveyance apparatus, conveyance method, and method for manufacturing semiconductor device
WO2023079648A1 (ja) * 2021-11-04 2023-05-11 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、レーザ照射方法、及びディスプレイの製造方法
CN118985037A (zh) * 2022-04-14 2024-11-19 Jsw阿克迪纳系统有限公司 搬送装置、移载方法、搬送方法及半导体装置的制造方法

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