TW382741B - Apparatus and method for laser irradiation - Google Patents
Apparatus and method for laser irradiation Download PDFInfo
- Publication number
- TW382741B TW382741B TW087102403A TW87102403A TW382741B TW 382741 B TW382741 B TW 382741B TW 087102403 A TW087102403 A TW 087102403A TW 87102403 A TW87102403 A TW 87102403A TW 382741 B TW382741 B TW 382741B
- Authority
- TW
- Taiwan
- Prior art keywords
- laser beam
- laser
- linear
- irradiated
- pulse
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 230000001678 irradiating effect Effects 0.000 claims abstract description 17
- 238000011049 filling Methods 0.000 claims description 19
- 230000010355 oscillation Effects 0.000 claims description 13
- 230000000737 periodic effect Effects 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 239000010408 film Substances 0.000 description 69
- 230000003287 optical effect Effects 0.000 description 30
- 239000000758 substrate Substances 0.000 description 28
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 18
- 238000005224 laser annealing Methods 0.000 description 15
- 230000002079 cooperative effect Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000011068 loading method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229940078494 nickel acetate Drugs 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000011218 segmentation Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- HEFNNWSXXWATRW-UHFFFAOYSA-N Ibuprofen Chemical compound CC(C)CC1=CC=C(C(C)C(O)=O)C=C1 HEFNNWSXXWATRW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/095—Processes or apparatus for excitation, e.g. pumping using chemical or thermal pumping
- H01S3/09505—Processes or apparatus for excitation, e.g. pumping using chemical or thermal pumping involving photochemical reactions, e.g. photodissociation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
- H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
- H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06178197A JP4056577B2 (ja) | 1997-02-28 | 1997-02-28 | レーザー照射方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW382741B true TW382741B (en) | 2000-02-21 |
Family
ID=13180987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087102403A TW382741B (en) | 1997-02-28 | 1998-02-20 | Apparatus and method for laser irradiation |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6160827A (enExample) |
| JP (1) | JP4056577B2 (enExample) |
| KR (1) | KR100500176B1 (enExample) |
| TW (1) | TW382741B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7413608B2 (en) | 2002-09-09 | 2008-08-19 | Advanced Lcd Technologies Development Center Co., Ltd. | Crystallization apparatus, crystallization method, and phase shifter |
| US7468312B2 (en) | 2001-11-09 | 2008-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6444506B1 (en) * | 1995-10-25 | 2002-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing silicon thin film devices using laser annealing in a hydrogen mixture gas followed by nitride formation |
| JPH09234579A (ja) * | 1996-02-28 | 1997-09-09 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
| US6555449B1 (en) * | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
| JP4086932B2 (ja) | 1997-04-17 | 2008-05-14 | 株式会社半導体エネルギー研究所 | レーザー照射装置及びレーザー処理方法 |
| JP3462053B2 (ja) | 1997-09-30 | 2003-11-05 | 株式会社半導体エネルギー研究所 | ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法および半導体デバイス |
| JPH11186189A (ja) * | 1997-12-17 | 1999-07-09 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
| JP4663047B2 (ja) * | 1998-07-13 | 2011-03-30 | 株式会社半導体エネルギー研究所 | レーザー照射装置及び半導体装置の作製方法 |
| US6246524B1 (en) | 1998-07-13 | 2001-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device |
| JP2000058839A (ja) | 1998-08-05 | 2000-02-25 | Semiconductor Energy Lab Co Ltd | 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法 |
| JP4588153B2 (ja) * | 1999-03-08 | 2010-11-24 | 株式会社半導体エネルギー研究所 | レーザー照射装置 |
| US6393042B1 (en) | 1999-03-08 | 2002-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer and laser irradiation apparatus |
| JP2001023918A (ja) * | 1999-07-08 | 2001-01-26 | Nec Corp | 半導体薄膜形成装置 |
| US6567219B1 (en) | 1999-08-13 | 2003-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
| US6573162B2 (en) | 1999-12-24 | 2003-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and method of fabricating a semiconductor device |
| JP4651772B2 (ja) * | 2000-02-29 | 2011-03-16 | 株式会社半導体エネルギー研究所 | レーザー照射装置 |
| US6830993B1 (en) * | 2000-03-21 | 2004-12-14 | The Trustees Of Columbia University In The City Of New York | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method |
| TW523791B (en) | 2000-09-01 | 2003-03-11 | Semiconductor Energy Lab | Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device |
| EP1259985A2 (en) | 2000-10-10 | 2002-11-27 | The Trustees Of Columbia University In The City Of New York | Method and apparatus for processing thin metal layers |
| US6955956B2 (en) * | 2000-12-26 | 2005-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| SG113399A1 (en) * | 2000-12-27 | 2005-08-29 | Semiconductor Energy Lab | Laser annealing method and semiconductor device fabricating method |
| US6830994B2 (en) * | 2001-03-09 | 2004-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a crystallized semiconductor film |
| TW552645B (en) | 2001-08-03 | 2003-09-11 | Semiconductor Energy Lab | Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device |
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| KR20050047103A (ko) * | 2002-08-19 | 2005-05-19 | 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 다양한 조사 패턴을 포함하는 원 샷 반도체 가공 시스템 및방법 |
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Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5313976B1 (enExample) * | 1969-08-04 | 1978-05-13 | ||
| US4309225A (en) * | 1979-09-13 | 1982-01-05 | Massachusetts Institute Of Technology | Method of crystallizing amorphous material with a moving energy beam |
| US4475027A (en) * | 1981-11-17 | 1984-10-02 | Allied Corporation | Optical beam homogenizer |
| US4439245A (en) * | 1982-01-25 | 1984-03-27 | Rca Corporation | Electromagnetic radiation annealing of semiconductor material |
| JPS58147708A (ja) * | 1982-02-26 | 1983-09-02 | Nippon Kogaku Kk <Nikon> | 照明用光学装置 |
| US4769750A (en) * | 1985-10-18 | 1988-09-06 | Nippon Kogaku K. K. | Illumination optical system |
| US4733944A (en) * | 1986-01-24 | 1988-03-29 | Xmr, Inc. | Optical beam integration system |
| US5307207A (en) * | 1988-03-16 | 1994-04-26 | Nikon Corporation | Illuminating optical apparatus |
| JP2657957B2 (ja) * | 1990-04-27 | 1997-09-30 | キヤノン株式会社 | 投影装置及び光照射方法 |
| US5097291A (en) * | 1991-04-22 | 1992-03-17 | Nikon Corporation | Energy amount control device |
| JPH06232069A (ja) * | 1993-02-04 | 1994-08-19 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP3883592B2 (ja) * | 1995-08-07 | 2007-02-21 | 株式会社半導体エネルギー研究所 | レーザ照射方法および半導体作製方法および半導体装置の作製方法および液晶電気光学装置の作製方法 |
| JPH09260681A (ja) * | 1996-03-23 | 1997-10-03 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
-
1997
- 1997-02-28 JP JP06178197A patent/JP4056577B2/ja not_active Expired - Lifetime
-
1998
- 1998-02-20 TW TW087102403A patent/TW382741B/zh not_active IP Right Cessation
- 1998-02-27 KR KR10-1998-0006310A patent/KR100500176B1/ko not_active Expired - Lifetime
- 1998-03-02 US US09/032,970 patent/US6160827A/en not_active Expired - Lifetime
-
2000
- 2000-10-31 US US09/704,386 patent/US6516009B1/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7468312B2 (en) | 2001-11-09 | 2008-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device |
| US7413608B2 (en) | 2002-09-09 | 2008-08-19 | Advanced Lcd Technologies Development Center Co., Ltd. | Crystallization apparatus, crystallization method, and phase shifter |
| US7505204B2 (en) | 2002-09-09 | 2009-03-17 | Advanced Lcd Technologies Development Center Co., Ltd. | Crystallization apparatus, crystallization method, and phase shifter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4056577B2 (ja) | 2008-03-05 |
| KR19980071778A (ko) | 1998-10-26 |
| US6516009B1 (en) | 2003-02-04 |
| JPH10242073A (ja) | 1998-09-11 |
| KR100500176B1 (ko) | 2005-09-30 |
| US6160827A (en) | 2000-12-12 |
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