JP4056577B2 - レーザー照射方法 - Google Patents

レーザー照射方法 Download PDF

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Publication number
JP4056577B2
JP4056577B2 JP06178197A JP6178197A JP4056577B2 JP 4056577 B2 JP4056577 B2 JP 4056577B2 JP 06178197 A JP06178197 A JP 06178197A JP 6178197 A JP6178197 A JP 6178197A JP 4056577 B2 JP4056577 B2 JP 4056577B2
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JP
Japan
Prior art keywords
laser beam
linear
laser
interference
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP06178197A
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English (en)
Japanese (ja)
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JPH10242073A (ja
JPH10242073A5 (enExample
Inventor
幸一郎 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP06178197A priority Critical patent/JP4056577B2/ja
Priority to TW087102403A priority patent/TW382741B/zh
Priority to KR10-1998-0006310A priority patent/KR100500176B1/ko
Priority to US09/032,970 priority patent/US6160827A/en
Publication of JPH10242073A publication Critical patent/JPH10242073A/ja
Priority to US09/704,386 priority patent/US6516009B1/en
Publication of JPH10242073A5 publication Critical patent/JPH10242073A5/ja
Application granted granted Critical
Publication of JP4056577B2 publication Critical patent/JP4056577B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/095—Processes or apparatus for excitation, e.g. pumping using chemical or thermal pumping
    • H01S3/09505—Processes or apparatus for excitation, e.g. pumping using chemical or thermal pumping involving photochemical reactions, e.g. photodissociation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H10P14/3411—
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Recrystallisation Techniques (AREA)
JP06178197A 1997-02-28 1997-02-28 レーザー照射方法 Expired - Lifetime JP4056577B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP06178197A JP4056577B2 (ja) 1997-02-28 1997-02-28 レーザー照射方法
TW087102403A TW382741B (en) 1997-02-28 1998-02-20 Apparatus and method for laser irradiation
KR10-1998-0006310A KR100500176B1 (ko) 1997-02-28 1998-02-27 레이저조사장치및레이저조사방법
US09/032,970 US6160827A (en) 1997-02-28 1998-03-02 Laser irradiating device and laser irradiating method
US09/704,386 US6516009B1 (en) 1997-02-28 2000-10-31 Laser irradiating device and laser irradiating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06178197A JP4056577B2 (ja) 1997-02-28 1997-02-28 レーザー照射方法

Publications (3)

Publication Number Publication Date
JPH10242073A JPH10242073A (ja) 1998-09-11
JPH10242073A5 JPH10242073A5 (enExample) 2005-01-06
JP4056577B2 true JP4056577B2 (ja) 2008-03-05

Family

ID=13180987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06178197A Expired - Lifetime JP4056577B2 (ja) 1997-02-28 1997-02-28 レーザー照射方法

Country Status (4)

Country Link
US (2) US6160827A (enExample)
JP (1) JP4056577B2 (enExample)
KR (1) KR100500176B1 (enExample)
TW (1) TW382741B (enExample)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
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JPH09234579A (ja) * 1996-02-28 1997-09-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
JP4086932B2 (ja) 1997-04-17 2008-05-14 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー処理方法
JP3462053B2 (ja) 1997-09-30 2003-11-05 株式会社半導体エネルギー研究所 ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法および半導体デバイス
JPH11186189A (ja) * 1997-12-17 1999-07-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
US6246524B1 (en) 1998-07-13 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device
JP4663047B2 (ja) * 1998-07-13 2011-03-30 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
JP2000058839A (ja) 1998-08-05 2000-02-25 Semiconductor Energy Lab Co Ltd 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法
JP4588153B2 (ja) * 1999-03-08 2010-11-24 株式会社半導体エネルギー研究所 レーザー照射装置
US6393042B1 (en) 1999-03-08 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus
JP2001023918A (ja) * 1999-07-08 2001-01-26 Nec Corp 半導体薄膜形成装置
US6567219B1 (en) 1999-08-13 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US6573162B2 (en) 1999-12-24 2003-06-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method of fabricating a semiconductor device
JP4651772B2 (ja) * 2000-02-29 2011-03-16 株式会社半導体エネルギー研究所 レーザー照射装置
US6830993B1 (en) * 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
TW523791B (en) 2000-09-01 2003-03-11 Semiconductor Energy Lab Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device
JP4599032B2 (ja) 2000-10-10 2010-12-15 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 薄い金属層を処理する方法及び装置
US6955956B2 (en) * 2000-12-26 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
SG113399A1 (en) 2000-12-27 2005-08-29 Semiconductor Energy Lab Laser annealing method and semiconductor device fabricating method
US6830994B2 (en) * 2001-03-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a crystallized semiconductor film
TW552645B (en) 2001-08-03 2003-09-11 Semiconductor Energy Lab Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device
KR100885904B1 (ko) * 2001-08-10 2009-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 어닐링장치 및 반도체장치의 제작방법
JP3977038B2 (ja) 2001-08-27 2007-09-19 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
JP4397571B2 (ja) 2001-09-25 2010-01-13 株式会社半導体エネルギー研究所 レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
TWI289896B (en) 2001-11-09 2007-11-11 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
US7026227B2 (en) * 2001-11-16 2006-04-11 Semiconductor Energy Laboratory Co., Ltd. Method of irradiating a laser beam, and method of fabricating semiconductor devices
US7105048B2 (en) * 2001-11-30 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US6849825B2 (en) * 2001-11-30 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US7133737B2 (en) * 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
US6841434B2 (en) 2002-03-26 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US6984573B2 (en) * 2002-06-14 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and apparatus
TWI378307B (en) * 2002-08-19 2012-12-01 Univ Columbia Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
TWI331803B (en) * 2002-08-19 2010-10-11 Univ Columbia A single-shot semiconductor processing system and method having various irradiation patterns
JP4278940B2 (ja) 2002-09-09 2009-06-17 株式会社 液晶先端技術開発センター 結晶化装置および結晶化方法
KR101191837B1 (ko) * 2003-02-19 2012-10-18 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 순차적 측면 고상화 기술을 이용하여 결정화되는 복수의 반도체 박막을 가공하는 방법 및 장치
JP4583004B2 (ja) 2003-05-21 2010-11-17 株式会社 日立ディスプレイズ アクティブ・マトリクス基板の製造方法
JP4152806B2 (ja) * 2003-05-28 2008-09-17 株式会社半導体エネルギー研究所 レーザ光照射装置
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
WO2005029549A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for facilitating bi-directional growth
WO2005029546A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029547A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
US7311778B2 (en) 2003-09-19 2007-12-25 The Trustees Of Columbia University In The City Of New York Single scan irradiation for crystallization of thin films
JP4579575B2 (ja) * 2004-05-14 2010-11-10 株式会社半導体エネルギー研究所 レーザ照射方法及びレーザ照射装置
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
KR101368570B1 (ko) * 2005-08-16 2014-02-27 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막의 고수율 결정화
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CN101971293B (zh) * 2008-02-29 2014-04-16 纽约市哥伦比亚大学理事会 用于薄膜的闪光灯退火
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US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
CN103870999A (zh) * 2014-02-25 2014-06-18 国家电网公司 一种基于旋转经验正交分解的辐照度区域划分方法
KR102388723B1 (ko) * 2015-08-07 2022-04-21 삼성디스플레이 주식회사 레이저 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법
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Also Published As

Publication number Publication date
JPH10242073A (ja) 1998-09-11
US6160827A (en) 2000-12-12
KR100500176B1 (ko) 2005-09-30
US6516009B1 (en) 2003-02-04
KR19980071778A (ko) 1998-10-26
TW382741B (en) 2000-02-21

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