JPH10270379A5 - - Google Patents

Info

Publication number
JPH10270379A5
JPH10270379A5 JP1997094605A JP9460597A JPH10270379A5 JP H10270379 A5 JPH10270379 A5 JP H10270379A5 JP 1997094605 A JP1997094605 A JP 1997094605A JP 9460597 A JP9460597 A JP 9460597A JP H10270379 A5 JPH10270379 A5 JP H10270379A5
Authority
JP
Japan
Prior art keywords
laser beam
linear
parallelogram
cylindrical lens
degrees
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997094605A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10270379A (ja
JP4059952B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP09460597A priority Critical patent/JP4059952B2/ja
Priority claimed from JP09460597A external-priority patent/JP4059952B2/ja
Priority to US09/049,735 priority patent/US6104535A/en
Publication of JPH10270379A publication Critical patent/JPH10270379A/ja
Priority to US09/542,430 priority patent/US6304385B1/en
Publication of JPH10270379A5 publication Critical patent/JPH10270379A5/ja
Application granted granted Critical
Publication of JP4059952B2 publication Critical patent/JP4059952B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP09460597A 1997-03-27 1997-03-27 レーザー光照射方法 Expired - Lifetime JP4059952B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP09460597A JP4059952B2 (ja) 1997-03-27 1997-03-27 レーザー光照射方法
US09/049,735 US6104535A (en) 1997-03-27 1998-03-26 Laser irradiation apparatus and method
US09/542,430 US6304385B1 (en) 1997-03-27 2000-04-04 Laser irradiation apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09460597A JP4059952B2 (ja) 1997-03-27 1997-03-27 レーザー光照射方法

Publications (3)

Publication Number Publication Date
JPH10270379A JPH10270379A (ja) 1998-10-09
JPH10270379A5 true JPH10270379A5 (enExample) 2005-01-27
JP4059952B2 JP4059952B2 (ja) 2008-03-12

Family

ID=14114891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP09460597A Expired - Lifetime JP4059952B2 (ja) 1997-03-27 1997-03-27 レーザー光照射方法

Country Status (2)

Country Link
US (2) US6104535A (enExample)
JP (1) JP4059952B2 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3917231B2 (ja) * 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
JPH09234579A (ja) * 1996-02-28 1997-09-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
JP4086932B2 (ja) 1997-04-17 2008-05-14 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー処理方法
JP3462053B2 (ja) 1997-09-30 2003-11-05 株式会社半導体エネルギー研究所 ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法および半導体デバイス
US6246524B1 (en) 1998-07-13 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device
JP4663047B2 (ja) * 1998-07-13 2011-03-30 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
US6392810B1 (en) 1998-10-05 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, beam homogenizer, semiconductor device, and method of manufacturing the semiconductor device
US20040007527A1 (en) * 1998-11-23 2004-01-15 Zenon Environmental Inc. Membrane filtration device and process
US6535535B1 (en) * 1999-02-12 2003-03-18 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and semiconductor device
US6393042B1 (en) 1999-03-08 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus
JP2001023918A (ja) * 1999-07-08 2001-01-26 Nec Corp 半導体薄膜形成装置
TW523791B (en) 2000-09-01 2003-03-11 Semiconductor Energy Lab Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device
MY127193A (en) * 2000-12-26 2006-11-30 Semiconductor Energy Lab Laser irradiation apparatus and method of laser irradiation
US6955956B2 (en) * 2000-12-26 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
TW558861B (en) * 2001-06-15 2003-10-21 Semiconductor Energy Lab Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device
AU2002354820A1 (en) * 2001-07-05 2003-01-21 Hentze-Lissotschenko Patentverwaltungs Gmbh And Co. Kg Arrangement for projecting the light emitted by a laser diode bar into a focal plane
JP3977038B2 (ja) 2001-08-27 2007-09-19 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
SG120880A1 (en) * 2001-08-31 2006-04-26 Semiconductor Energy Lab Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
TWI332682B (en) * 2002-09-19 2010-11-01 Semiconductor Energy Lab Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device
US7387922B2 (en) * 2003-01-21 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation system
US7327916B2 (en) * 2003-03-11 2008-02-05 Semiconductor Energy Laboratory Co., Ltd. Beam Homogenizer, laser irradiation apparatus, and method of manufacturing a semiconductor device
SG137674A1 (en) * 2003-04-24 2007-12-28 Semiconductor Energy Lab Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
JP4152806B2 (ja) * 2003-05-28 2008-09-17 株式会社半導体エネルギー研究所 レーザ光照射装置
US7245802B2 (en) * 2003-08-04 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device
US7169630B2 (en) * 2003-09-30 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US7374985B2 (en) * 2003-11-20 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
TW200541078A (en) * 2004-03-31 2005-12-16 Adv Lcd Tech Dev Ct Co Ltd Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
JP4579575B2 (ja) * 2004-05-14 2010-11-10 株式会社半導体エネルギー研究所 レーザ照射方法及びレーザ照射装置
US7387954B2 (en) 2004-10-04 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US7664365B2 (en) * 2004-10-27 2010-02-16 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same
EP1708008B1 (en) * 2005-04-01 2011-08-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradition apparatus
JP2007110064A (ja) 2005-09-14 2007-04-26 Ishikawajima Harima Heavy Ind Co Ltd レーザアニール方法及び装置
WO2007049525A1 (en) 2005-10-26 2007-05-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and manufacturing method of semiconductor device
US7563661B2 (en) * 2006-02-02 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus
JP2008124149A (ja) * 2006-11-09 2008-05-29 Advanced Lcd Technologies Development Center Co Ltd 光学装置および結晶化装置
JP5437079B2 (ja) * 2008-01-07 2014-03-12 株式会社Ｉｈｉ レーザアニール方法及び装置
WO2021181700A1 (ja) * 2020-03-13 2021-09-16 堺ディスプレイプロダクト株式会社 レーザアニール装置およびレーザアニール方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4733944A (en) * 1986-01-24 1988-03-29 Xmr, Inc. Optical beam integration system
JP3562588B2 (ja) * 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
JPH07308788A (ja) * 1994-05-16 1995-11-28 Sanyo Electric Co Ltd 光加工法及び光起電力装置の製造方法
JP3917231B2 (ja) * 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
JP3301054B2 (ja) * 1996-02-13 2002-07-15 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
JPH10244392A (ja) * 1997-03-04 1998-09-14 Semiconductor Energy Lab Co Ltd レーザー照射装置

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