JPH10293267A5 - - Google Patents

Info

Publication number
JPH10293267A5
JPH10293267A5 JP1997118888A JP11888897A JPH10293267A5 JP H10293267 A5 JPH10293267 A5 JP H10293267A5 JP 1997118888 A JP1997118888 A JP 1997118888A JP 11888897 A JP11888897 A JP 11888897A JP H10293267 A5 JPH10293267 A5 JP H10293267A5
Authority
JP
Japan
Prior art keywords
cylindrical lens
light
split
lenses
recombine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997118888A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10293267A (ja
JP3770999B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11888897A priority Critical patent/JP3770999B2/ja
Priority claimed from JP11888897A external-priority patent/JP3770999B2/ja
Priority to US09/062,876 priority patent/US6137633A/en
Publication of JPH10293267A publication Critical patent/JPH10293267A/ja
Publication of JPH10293267A5 publication Critical patent/JPH10293267A5/ja
Application granted granted Critical
Publication of JP3770999B2 publication Critical patent/JP3770999B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP11888897A 1997-04-21 1997-04-21 レーザー照射装置及びレーザー照射方法 Expired - Fee Related JP3770999B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11888897A JP3770999B2 (ja) 1997-04-21 1997-04-21 レーザー照射装置及びレーザー照射方法
US09/062,876 US6137633A (en) 1997-04-21 1998-04-20 Laser irradiating apparatus and laser irradiating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11888897A JP3770999B2 (ja) 1997-04-21 1997-04-21 レーザー照射装置及びレーザー照射方法

Publications (3)

Publication Number Publication Date
JPH10293267A JPH10293267A (ja) 1998-11-04
JPH10293267A5 true JPH10293267A5 (enExample) 2005-03-17
JP3770999B2 JP3770999B2 (ja) 2006-04-26

Family

ID=14747636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11888897A Expired - Fee Related JP3770999B2 (ja) 1997-04-21 1997-04-21 レーザー照射装置及びレーザー照射方法

Country Status (2)

Country Link
US (1) US6137633A (enExample)
JP (1) JP3770999B2 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729150A (en) * 1995-12-01 1998-03-17 Cascade Microtech, Inc. Low-current probe card with reduced triboelectric current generating cables
JP3917231B2 (ja) * 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
JPH09234579A (ja) * 1996-02-28 1997-09-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
JP4086932B2 (ja) * 1997-04-17 2008-05-14 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー処理方法
JP3462053B2 (ja) * 1997-09-30 2003-11-05 株式会社半導体エネルギー研究所 ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法および半導体デバイス
JPH11186189A (ja) * 1997-12-17 1999-07-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
DE19819333A1 (de) * 1998-04-30 1999-11-04 Lissotschenko Vitaly Optisches Emitter-Array mit Kollimationsoptik
US6246524B1 (en) 1998-07-13 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device
JP4663047B2 (ja) * 1998-07-13 2011-03-30 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
EP1744349A3 (en) 1998-10-05 2007-04-04 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, beam homogenizer, semiconductor device, and method of manufacturing the semiconductor device
US6535535B1 (en) * 1999-02-12 2003-03-18 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and semiconductor device
JP4588153B2 (ja) * 1999-03-08 2010-11-24 株式会社半導体エネルギー研究所 レーザー照射装置
US6393042B1 (en) 1999-03-08 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus
JP4403599B2 (ja) * 1999-04-19 2010-01-27 ソニー株式会社 半導体薄膜の結晶化方法、レーザ照射装置、薄膜トランジスタの製造方法及び表示装置の製造方法
US6567219B1 (en) 1999-08-13 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US6573162B2 (en) * 1999-12-24 2003-06-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method of fabricating a semiconductor device
TW523791B (en) 2000-09-01 2003-03-11 Semiconductor Energy Lab Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device
US6955956B2 (en) * 2000-12-26 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
SG113399A1 (en) * 2000-12-27 2005-08-29 Semiconductor Energy Lab Laser annealing method and semiconductor device fabricating method
US7743631B2 (en) * 2001-05-09 2010-06-29 Hamamatsu Photonics K.K. Method of forming an optical lens by drawing material with curved surface parts
TW558861B (en) * 2001-06-15 2003-10-21 Semiconductor Energy Lab Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device
TW552645B (en) 2001-08-03 2003-09-11 Semiconductor Energy Lab Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device
US6847006B2 (en) * 2001-08-10 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Laser annealing apparatus and semiconductor device manufacturing method
JP3977038B2 (ja) 2001-08-27 2007-09-19 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
TWI332682B (en) * 2002-09-19 2010-11-01 Semiconductor Energy Lab Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device
US7327916B2 (en) * 2003-03-11 2008-02-05 Semiconductor Energy Laboratory Co., Ltd. Beam Homogenizer, laser irradiation apparatus, and method of manufacturing a semiconductor device
SG137674A1 (en) * 2003-04-24 2007-12-28 Semiconductor Energy Lab Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
JP4152806B2 (ja) * 2003-05-28 2008-09-17 株式会社半導体エネルギー研究所 レーザ光照射装置
US7245802B2 (en) * 2003-08-04 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device
US7169630B2 (en) * 2003-09-30 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
JP4579575B2 (ja) 2004-05-14 2010-11-10 株式会社半導体エネルギー研究所 レーザ照射方法及びレーザ照射装置
US7387954B2 (en) * 2004-10-04 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US7664365B2 (en) * 2004-10-27 2010-02-16 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same
EP1708008B1 (en) * 2005-04-01 2011-08-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradition apparatus
WO2007049525A1 (en) 2005-10-26 2007-05-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and manufacturing method of semiconductor device
US7563661B2 (en) * 2006-02-02 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus
JP6616368B2 (ja) * 2017-09-14 2019-12-04 ファナック株式会社 レーザ加工前に光学系の汚染レベルに応じて加工条件を補正するレーザ加工装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4733944A (en) * 1986-01-24 1988-03-29 Xmr, Inc. Optical beam integration system
US5657138A (en) * 1991-10-13 1997-08-12 Lewis; Aaron Generating defined structures on materials using combined optical technologies for transforming the processing beam
JPH06124913A (ja) * 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
JPH06232069A (ja) * 1993-02-04 1994-08-19 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP3562588B2 (ja) * 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
JPH0761781A (ja) * 1993-08-31 1995-03-07 Press Kogyo Kk フォークリフト
DE19520187C1 (de) * 1995-06-01 1996-09-12 Microlas Lasersystem Gmbh Optik zum Herstellen einer scharfen Beleuchtungslinie aus einem Laserstrahl
JP3917231B2 (ja) * 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
JPH10244392A (ja) * 1997-03-04 1998-09-14 Semiconductor Energy Lab Co Ltd レーザー照射装置

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