JPH06510565A - スループットの高いスパッタリング装置及び方法 - Google Patents
スループットの高いスパッタリング装置及び方法Info
- Publication number
- JPH06510565A JPH06510565A JP4509923A JP50992392A JPH06510565A JP H06510565 A JPH06510565 A JP H06510565A JP 4509923 A JP4509923 A JP 4509923A JP 50992392 A JP50992392 A JP 50992392A JP H06510565 A JPH06510565 A JP H06510565A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- substrate
- chamber
- pallet
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/028—Physical treatment to alter the texture of the substrate surface, e.g. grinding, polishing
-
- C—CHEMISTRY; METALLURGY
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Abstract
Description
Claims (5)
- 1.複数の基体の表面に単一又は多層のコーティングを設けるためのスループッ トの高いスパッタリング装置において、複数の緩衝及びスパッタリングチャンバ と、入力端及び出力端とを備え、上記基体は、上記入力端から出力端へのパレッ トの速度が複数のパレットの各々に対して一定となるように上記装置の上記チャ ンバを変化する速度で搬送されることを特徴とするスパッタリング装置。
- 2.複数の完全に整合された要素を有するスループットの高いスパッタリング装 置において、 複数の基体に多層コーティングをスパッタリングする手段を具備し、該スパッタ リング手段は一連のスパッタリングチャンバを含んでおり、その各々は基体にス パッタリングされるコーティング成分間の交差汚染を低減するように隣接チャン バから相対的に分離されており、更に、スパッタリングチャンバは周囲の大気状 態からも分離されており、 更に、上記スパッタリング手段を通して可変速度で上記複数の基体を搬送する手 段と、 上記スパッタリング手段内の雰囲気圧力を、スパッタリング動作を行えるに充分 な圧力範囲の真空レベルに減圧する手段と、上記複数の基体を、その上に上記多 層コーティングをスパッタリングする温度まで加熱する手段であって、上記基体 の表面にわたり実質的に均一な温度プロファイルを与えるための加熱手段と、 上記スパッタリング手段、上記搬送手段、上記減圧手段及び上記加熱手段へ制御 信号を供給すると共にこれら手段からのフィードバック入力を受け取るための制 御手段であって、上記スパッタリング手段、上記搬送手段、上記減圧手段及び上 記加熱手段を制御できるようにプログラム可能な制御手段とを具備したことを特 徴とするスパッタリング装置。
- 3.制御信号を発生すると共に複数の感知入力信号を監視する制御手段と、上記 制御信号に応答して選択された可変の速度で一連の次々の同時スパッタリング段 階を経て複数の基体を搬送する手段であって、上記感知入力信号を上記制御手段 に供給する第1組の手段を含んでいるような搬送手段と、上記制御手段に応答し てスパッタリング動作を行える圧力範囲内の共通の低い圧力レベルに装置内の雰 囲気圧力を減圧する手段であって、上記感知入力信号を上記制御手段に供給する 第2組の手段を含んでいるような減圧手段と、上記基体の表面にわたり実質的に 均一なプロファイルを与える雰囲気温度まで上記複数の基体を加熱する手段であ って、上記感知入力信号を上記制御手段に供給する第3組の手段を含んでいるよ うな加熱手段と、上記制御手段に応答して上記基体上に多層コーティングをスパ ッタリングする手段であって、上記感知入力信号を上記制御手段に供給する第4 組の手段を含んでいるようなスパッタリング手段とを具備することを特徴とする スループットの高いスパッタリング装置。
- 4.多層の薄いフィルムを形成するためのスループットの高い直流マグネトロン スパッタリング方法において、 スパッタリングされるべき基体を用意し、スパッタリング動作を行える圧力範囲 内の圧力をもつ環境を上記基体のまわりに形成し、 上記圧力範囲内の上記環境にガスをプラズマ状態で導入してスパッタリング動作 を実行し、 上記環境内で一連のスパッタリング段階を受けるように上記環境を通して変化す る速度で基体を搬送すると共に上記環境に対して外部の戻り路に沿っても搬送し 、そして同時に、 上記環境の上記圧力を実質的に破壊することなく上記環境に基体を導入し、スパ ッタリング段階中のフィルムの完全性を最適なものにするように上記基体の迅速 且つ均一な加熱を行い、そして上記基体に薄いフィルムの次々の層を形成するよ うに上記基体をスパッタリングし、そして 上記環境を汚染することなく上記スパッタリングされた基体を取り出すという段 階を備えたことを特徴とする方法。
- 5.磁気記録媒体上に多層の薄いフィルムを形成するためのスループットの高い 直流スパッタリング方法において、 基体を用意し、 基体の表面にわたって周囲線の交差した均一な組織を得るように基体を物理的に 研磨し、 上記基体を清掃し、 スパッタリング動作を行える圧力範囲内の圧力をもつスパッタリング環境を上記 基体のまわりに設け、 基体及びキャリアの熱膨張を受け入れると共に個々の基体間の熱的な均一性を向 上させるに充分な大きさの大容量キャリアに基体をロードし、上記環境を破壊す ることなく上記環境に基体を導入し、基体を汚染から保護しつつ、上記環境を通 り、上記環境に対して外部の戻り路を通って変化する速度で基体を搬送し、スパ ッタリング動作を行うに充分な圧力の上記環境にガスをプラズマ状態で供給し、 次々のスパッタリング段階中にフィルムの完全性を最適にするように基体の迅速 且つ均一な加熱を行い、 上記基体に薄いフィルムの次々の層を設けるようにスパッタリングし、そしてス パッタリング動作を妨げることなく上記コーティングされた基体を取り出すとい う段階を備えたことを特徴とする方法。
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US68186691A | 1991-04-04 | 1991-04-04 | |
US681,866 | 1991-04-04 | ||
PCT/US1992/000722 WO1992017621A1 (en) | 1991-04-04 | 1992-01-29 | Apparatus and method for high throughput sputtering |
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JP3416910B2 JP3416910B2 (ja) | 2003-06-16 |
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EP (1) | EP0577766B1 (ja) |
JP (1) | JP3416910B2 (ja) |
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WO (1) | WO1992017621A1 (ja) |
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JP2011149093A (ja) * | 2009-12-22 | 2011-08-04 | Canon Anelva Corp | スパッタリング装置及びスパッタリング成膜方法並びにスパッタリング装置の電源制御方法 |
JP2012132075A (ja) * | 2010-12-22 | 2012-07-12 | Canon Anelva Corp | 真空処理装置、及び、それを用いた処理方法 |
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Also Published As
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DE69230493T2 (de) | 2000-05-04 |
US5683561A (en) | 1997-11-04 |
JP3416910B2 (ja) | 2003-06-16 |
DE69230493D1 (de) | 2000-02-03 |
US6156171A (en) | 2000-12-05 |
EP0577766A1 (en) | 1994-01-12 |
US5972184A (en) | 1999-10-26 |
WO1992017621A1 (en) | 1992-10-15 |
US5814196A (en) | 1998-09-29 |
EP0577766A4 (en) | 1996-03-06 |
EP0577766B1 (en) | 1999-12-29 |
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