JP7708759B2 - 抵抗変化型不揮発性記憶装置およびその書き込み方法 - Google Patents

抵抗変化型不揮発性記憶装置およびその書き込み方法

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Publication number
JP7708759B2
JP7708759B2 JP2022534981A JP2022534981A JP7708759B2 JP 7708759 B2 JP7708759 B2 JP 7708759B2 JP 2022534981 A JP2022534981 A JP 2022534981A JP 2022534981 A JP2022534981 A JP 2022534981A JP 7708759 B2 JP7708759 B2 JP 7708759B2
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Japan
Prior art keywords
current
period
constant current
resistance
nonvolatile memory
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JP2022534981A
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English (en)
Japanese (ja)
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JPWO2022009618A5 (https=
JPWO2022009618A1 (https=
Inventor
賢 河合
幸治 片山
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Nuvoton Technology Corp Japan
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Nuvoton Technology Corp Japan
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0078—Write using current through the cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
JP2022534981A 2020-07-09 2021-06-14 抵抗変化型不揮発性記憶装置およびその書き込み方法 Active JP7708759B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020118177 2020-07-09
JP2020118177 2020-07-09
PCT/JP2021/022553 WO2022009618A1 (ja) 2020-07-09 2021-06-14 抵抗変化型不揮発性記憶装置およびその書き込み方法

Publications (3)

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JPWO2022009618A1 JPWO2022009618A1 (https=) 2022-01-13
JPWO2022009618A5 JPWO2022009618A5 (https=) 2023-03-23
JP7708759B2 true JP7708759B2 (ja) 2025-07-15

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JP2022534981A Active JP7708759B2 (ja) 2020-07-09 2021-06-14 抵抗変化型不揮発性記憶装置およびその書き込み方法

Country Status (4)

Country Link
US (1) US12190950B2 (https=)
JP (1) JP7708759B2 (https=)
CN (1) CN115917651B (https=)
WO (1) WO2022009618A1 (https=)

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* Cited by examiner, † Cited by third party
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US11315634B1 (en) * 2020-10-20 2022-04-26 International Business Machines Corporation Device comprising tunable resistive elements
CN119054020A (zh) * 2022-04-19 2024-11-29 索尼半导体解决方案公司 存储装置、电子设备和存储装置控制方法

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JP2008306157A (ja) 2007-05-10 2008-12-18 Sharp Corp 可変抵抗素子とその製造方法及び不揮発性半導体記憶装置
JP2010211895A (ja) 2009-03-12 2010-09-24 Toshiba Corp 不揮発性半導体記憶装置
JP2011009344A (ja) 2009-06-24 2011-01-13 Sharp Corp 不揮発性可変抵抗素子のフォーミング方法
JP2012133836A (ja) 2010-12-20 2012-07-12 Toshiba Corp 抵抗変化型メモリ
US20120230080A1 (en) 2011-03-11 2012-09-13 Samsung Electronics Co., Ltd. Variable Resistance Device, Semiconductor Device Including The Variable Resistance Device, And Method Of Operating The Semiconductor Device
US20130163349A1 (en) 2011-12-22 2013-06-27 SK Hynix Inc. Programming pulse generation circuit and non-volatile memory apparatus having the same
JP2016167326A (ja) 2015-03-09 2016-09-15 ルネサスエレクトロニクス株式会社 半導体記憶装置
WO2019131025A1 (ja) 2017-12-29 2019-07-04 パナソニック株式会社 抵抗変化型不揮発性記憶装置

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JP4628501B2 (ja) * 2009-03-25 2011-02-09 パナソニック株式会社 抵抗変化素子の駆動方法及び不揮発性記憶装置
US8508976B2 (en) * 2009-04-30 2013-08-13 Panasonic Corporation Nonvolatile memory element and nonvolatile memory device
CN102197434A (zh) 2009-10-15 2011-09-21 松下电器产业株式会社 电阻变化型非易失性存储装置
JP2011204785A (ja) * 2010-03-24 2011-10-13 Toshiba Corp 不揮発性記憶装置
JP5521850B2 (ja) 2010-07-21 2014-06-18 ソニー株式会社 抵抗変化型メモリデバイスおよびその駆動方法
JP5000026B2 (ja) * 2010-10-29 2012-08-15 パナソニック株式会社 不揮発性記憶装置
CN103052990B (zh) * 2011-08-02 2015-01-07 松下电器产业株式会社 电阻变化型非易失性存储装置及其驱动方法
WO2013157261A1 (ja) * 2012-04-20 2013-10-24 パナソニック株式会社 不揮発性記憶素子の駆動方法および不揮発性記憶装置
JP2014078302A (ja) * 2012-10-11 2014-05-01 Panasonic Corp クロスポイント型抵抗変化不揮発性記憶装置及びクロスポイント型抵抗変化不揮発性記憶装置の読み出し方法
US8981332B2 (en) * 2013-03-15 2015-03-17 Intermolecular, Inc. Nonvolatile resistive memory element with an oxygen-gettering layer
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JP2008306157A (ja) 2007-05-10 2008-12-18 Sharp Corp 可変抵抗素子とその製造方法及び不揮発性半導体記憶装置
JP2010211895A (ja) 2009-03-12 2010-09-24 Toshiba Corp 不揮発性半導体記憶装置
JP2011009344A (ja) 2009-06-24 2011-01-13 Sharp Corp 不揮発性可変抵抗素子のフォーミング方法
JP2012133836A (ja) 2010-12-20 2012-07-12 Toshiba Corp 抵抗変化型メモリ
US20120230080A1 (en) 2011-03-11 2012-09-13 Samsung Electronics Co., Ltd. Variable Resistance Device, Semiconductor Device Including The Variable Resistance Device, And Method Of Operating The Semiconductor Device
US20130163349A1 (en) 2011-12-22 2013-06-27 SK Hynix Inc. Programming pulse generation circuit and non-volatile memory apparatus having the same
JP2016167326A (ja) 2015-03-09 2016-09-15 ルネサスエレクトロニクス株式会社 半導体記憶装置
WO2019131025A1 (ja) 2017-12-29 2019-07-04 パナソニック株式会社 抵抗変化型不揮発性記憶装置

Also Published As

Publication number Publication date
US20230081445A1 (en) 2023-03-16
CN115917651A (zh) 2023-04-04
WO2022009618A1 (ja) 2022-01-13
CN115917651B (zh) 2025-10-17
JPWO2022009618A1 (https=) 2022-01-13
US12190950B2 (en) 2025-01-07

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