CN115917651B - 电阻变化型非易失性存储装置及其写入方法 - Google Patents

电阻变化型非易失性存储装置及其写入方法

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Publication number
CN115917651B
CN115917651B CN202180043696.4A CN202180043696A CN115917651B CN 115917651 B CN115917651 B CN 115917651B CN 202180043696 A CN202180043696 A CN 202180043696A CN 115917651 B CN115917651 B CN 115917651B
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China
Prior art keywords
resistance
current
period
constant current
nonvolatile memory
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Active
Application number
CN202180043696.4A
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English (en)
Chinese (zh)
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CN115917651A (zh
Inventor
河合贤
片山幸治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
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Nuvoton Technology Corp Japan
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Publication of CN115917651A publication Critical patent/CN115917651A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0078—Write using current through the cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
CN202180043696.4A 2020-07-09 2021-06-14 电阻变化型非易失性存储装置及其写入方法 Active CN115917651B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-118177 2020-07-09
JP2020118177 2020-07-09
PCT/JP2021/022553 WO2022009618A1 (ja) 2020-07-09 2021-06-14 抵抗変化型不揮発性記憶装置およびその書き込み方法

Publications (2)

Publication Number Publication Date
CN115917651A CN115917651A (zh) 2023-04-04
CN115917651B true CN115917651B (zh) 2025-10-17

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Country Status (4)

Country Link
US (1) US12190950B2 (https=)
JP (1) JP7708759B2 (https=)
CN (1) CN115917651B (https=)
WO (1) WO2022009618A1 (https=)

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US11315634B1 (en) * 2020-10-20 2022-04-26 International Business Machines Corporation Device comprising tunable resistive elements
CN119054020A (zh) * 2022-04-19 2024-11-29 索尼半导体解决方案公司 存储装置、电子设备和存储装置控制方法

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KR100699837B1 (ko) * 2005-04-04 2007-03-27 삼성전자주식회사 반도체 메모리 장치 및 반도체 메모리 장치의 프로그래밍방법
JP4967176B2 (ja) * 2007-05-10 2012-07-04 シャープ株式会社 可変抵抗素子とその製造方法及び不揮発性半導体記憶装置
JP4846813B2 (ja) * 2009-03-12 2011-12-28 株式会社東芝 不揮発性半導体記憶装置
JP4628501B2 (ja) * 2009-03-25 2011-02-09 パナソニック株式会社 抵抗変化素子の駆動方法及び不揮発性記憶装置
US8508976B2 (en) * 2009-04-30 2013-08-13 Panasonic Corporation Nonvolatile memory element and nonvolatile memory device
JP2011009344A (ja) * 2009-06-24 2011-01-13 Sharp Corp 不揮発性可変抵抗素子のフォーミング方法
CN102197434A (zh) 2009-10-15 2011-09-21 松下电器产业株式会社 电阻变化型非易失性存储装置
JP2011204785A (ja) * 2010-03-24 2011-10-13 Toshiba Corp 不揮発性記憶装置
JP5521850B2 (ja) 2010-07-21 2014-06-18 ソニー株式会社 抵抗変化型メモリデバイスおよびその駆動方法
JP5000026B2 (ja) * 2010-10-29 2012-08-15 パナソニック株式会社 不揮発性記憶装置
JP2012133836A (ja) * 2010-12-20 2012-07-12 Toshiba Corp 抵抗変化型メモリ
KR20120103913A (ko) * 2011-03-11 2012-09-20 삼성전자주식회사 가변 저항 소자, 상기 가변 저항 소자를 포함하는 반도체 장치 및 상기 반도체 장치의 동작 방법
CN103052990B (zh) * 2011-08-02 2015-01-07 松下电器产业株式会社 电阻变化型非易失性存储装置及其驱动方法
KR20130072842A (ko) * 2011-12-22 2013-07-02 에스케이하이닉스 주식회사 프로그램 펄스 발생 회로 및 이를 구비하는 비휘발성 메모리 장치
WO2013157261A1 (ja) * 2012-04-20 2013-10-24 パナソニック株式会社 不揮発性記憶素子の駆動方法および不揮発性記憶装置
JP2014078302A (ja) * 2012-10-11 2014-05-01 Panasonic Corp クロスポイント型抵抗変化不揮発性記憶装置及びクロスポイント型抵抗変化不揮発性記憶装置の読み出し方法
US8981332B2 (en) * 2013-03-15 2015-03-17 Intermolecular, Inc. Nonvolatile resistive memory element with an oxygen-gettering layer
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CN105632543B (zh) * 2014-11-21 2018-03-30 松下知识产权经营株式会社 具有防篡改性的非易失性存储装置及集成电路卡
JP2016167326A (ja) * 2015-03-09 2016-09-15 ルネサスエレクトロニクス株式会社 半導体記憶装置
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JP2021150308A (ja) * 2020-03-16 2021-09-27 キオクシア株式会社 半導体記憶装置
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Also Published As

Publication number Publication date
US20230081445A1 (en) 2023-03-16
JP7708759B2 (ja) 2025-07-15
CN115917651A (zh) 2023-04-04
WO2022009618A1 (ja) 2022-01-13
JPWO2022009618A1 (https=) 2022-01-13
US12190950B2 (en) 2025-01-07

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