JPWO2022009618A1 - - Google Patents
Info
- Publication number
- JPWO2022009618A1 JPWO2022009618A1 JP2022534981A JP2022534981A JPWO2022009618A1 JP WO2022009618 A1 JPWO2022009618 A1 JP WO2022009618A1 JP 2022534981 A JP2022534981 A JP 2022534981A JP 2022534981 A JP2022534981 A JP 2022534981A JP WO2022009618 A1 JPWO2022009618 A1 JP WO2022009618A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0026—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0078—Write using current through the cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/32—Material having simple binary metal oxide structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020118177 | 2020-07-09 | ||
| JP2020118177 | 2020-07-09 | ||
| PCT/JP2021/022553 WO2022009618A1 (ja) | 2020-07-09 | 2021-06-14 | 抵抗変化型不揮発性記憶装置およびその書き込み方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022009618A1 true JPWO2022009618A1 (https=) | 2022-01-13 |
| JPWO2022009618A5 JPWO2022009618A5 (https=) | 2023-03-23 |
| JP7708759B2 JP7708759B2 (ja) | 2025-07-15 |
Family
ID=79552915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022534981A Active JP7708759B2 (ja) | 2020-07-09 | 2021-06-14 | 抵抗変化型不揮発性記憶装置およびその書き込み方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12190950B2 (https=) |
| JP (1) | JP7708759B2 (https=) |
| CN (1) | CN115917651B (https=) |
| WO (1) | WO2022009618A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11315634B1 (en) * | 2020-10-20 | 2022-04-26 | International Business Machines Corporation | Device comprising tunable resistive elements |
| CN119054020A (zh) * | 2022-04-19 | 2024-11-29 | 索尼半导体解决方案公司 | 存储装置、电子设备和存储装置控制方法 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008306157A (ja) * | 2007-05-10 | 2008-12-18 | Sharp Corp | 可変抵抗素子とその製造方法及び不揮発性半導体記憶装置 |
| JP2010211895A (ja) * | 2009-03-12 | 2010-09-24 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP2011009344A (ja) * | 2009-06-24 | 2011-01-13 | Sharp Corp | 不揮発性可変抵抗素子のフォーミング方法 |
| JP2012133836A (ja) * | 2010-12-20 | 2012-07-12 | Toshiba Corp | 抵抗変化型メモリ |
| US20120230080A1 (en) * | 2011-03-11 | 2012-09-13 | Samsung Electronics Co., Ltd. | Variable Resistance Device, Semiconductor Device Including The Variable Resistance Device, And Method Of Operating The Semiconductor Device |
| US20130163349A1 (en) * | 2011-12-22 | 2013-06-27 | SK Hynix Inc. | Programming pulse generation circuit and non-volatile memory apparatus having the same |
| JP2016167326A (ja) * | 2015-03-09 | 2016-09-15 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| WO2019131025A1 (ja) * | 2017-12-29 | 2019-07-04 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100699837B1 (ko) * | 2005-04-04 | 2007-03-27 | 삼성전자주식회사 | 반도체 메모리 장치 및 반도체 메모리 장치의 프로그래밍방법 |
| JP4628501B2 (ja) * | 2009-03-25 | 2011-02-09 | パナソニック株式会社 | 抵抗変化素子の駆動方法及び不揮発性記憶装置 |
| US8508976B2 (en) * | 2009-04-30 | 2013-08-13 | Panasonic Corporation | Nonvolatile memory element and nonvolatile memory device |
| CN102197434A (zh) | 2009-10-15 | 2011-09-21 | 松下电器产业株式会社 | 电阻变化型非易失性存储装置 |
| JP2011204785A (ja) * | 2010-03-24 | 2011-10-13 | Toshiba Corp | 不揮発性記憶装置 |
| JP5521850B2 (ja) | 2010-07-21 | 2014-06-18 | ソニー株式会社 | 抵抗変化型メモリデバイスおよびその駆動方法 |
| JP5000026B2 (ja) * | 2010-10-29 | 2012-08-15 | パナソニック株式会社 | 不揮発性記憶装置 |
| CN103052990B (zh) * | 2011-08-02 | 2015-01-07 | 松下电器产业株式会社 | 电阻变化型非易失性存储装置及其驱动方法 |
| WO2013157261A1 (ja) * | 2012-04-20 | 2013-10-24 | パナソニック株式会社 | 不揮発性記憶素子の駆動方法および不揮発性記憶装置 |
| JP2014078302A (ja) * | 2012-10-11 | 2014-05-01 | Panasonic Corp | クロスポイント型抵抗変化不揮発性記憶装置及びクロスポイント型抵抗変化不揮発性記憶装置の読み出し方法 |
| US8981332B2 (en) * | 2013-03-15 | 2015-03-17 | Intermolecular, Inc. | Nonvolatile resistive memory element with an oxygen-gettering layer |
| US9336881B2 (en) * | 2014-06-16 | 2016-05-10 | Panasonic Intellectual Property Management Co., Ltd. | Variable resistance nonvolatile memory device including a variable resistance layer that changes reversibly between a low resistance state and a high resistance state according to an applied electrical signal |
| CN105632543B (zh) * | 2014-11-21 | 2018-03-30 | 松下知识产权经营株式会社 | 具有防篡改性的非易失性存储装置及集成电路卡 |
| US11139024B2 (en) * | 2017-03-01 | 2021-10-05 | Nanobridge Semiconductor, Inc. | Semiconductor device |
| US10541011B1 (en) * | 2017-08-01 | 2020-01-21 | SK Hynix Inc. | Electronic device |
| US10783941B1 (en) * | 2019-05-28 | 2020-09-22 | Intel Corporation | Floating block select based programming time (tPROG) |
| US11610101B2 (en) * | 2019-08-30 | 2023-03-21 | International Business Machines Corporation | Formation failure resilient neuromorphic device |
| CN112825259A (zh) * | 2019-11-20 | 2021-05-21 | 三星电子株式会社 | 非易失性存储器及其操作方法 |
| KR102802846B1 (ko) * | 2019-12-23 | 2025-05-07 | 에스케이하이닉스 주식회사 | 저항성 메모리 장치 및 그의 동작 방법 |
| JP2021150308A (ja) * | 2020-03-16 | 2021-09-27 | キオクシア株式会社 | 半導体記憶装置 |
| US11145349B1 (en) * | 2020-09-28 | 2021-10-12 | Globalfoundries U.S. Inc. | Physically unclonable function architecture including memory cells with parallel-connected access transistors and common write wordlines |
-
2021
- 2021-06-14 JP JP2022534981A patent/JP7708759B2/ja active Active
- 2021-06-14 WO PCT/JP2021/022553 patent/WO2022009618A1/ja not_active Ceased
- 2021-06-14 CN CN202180043696.4A patent/CN115917651B/zh active Active
-
2022
- 2022-11-18 US US18/057,067 patent/US12190950B2/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008306157A (ja) * | 2007-05-10 | 2008-12-18 | Sharp Corp | 可変抵抗素子とその製造方法及び不揮発性半導体記憶装置 |
| JP2010211895A (ja) * | 2009-03-12 | 2010-09-24 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP2011009344A (ja) * | 2009-06-24 | 2011-01-13 | Sharp Corp | 不揮発性可変抵抗素子のフォーミング方法 |
| JP2012133836A (ja) * | 2010-12-20 | 2012-07-12 | Toshiba Corp | 抵抗変化型メモリ |
| US20120230080A1 (en) * | 2011-03-11 | 2012-09-13 | Samsung Electronics Co., Ltd. | Variable Resistance Device, Semiconductor Device Including The Variable Resistance Device, And Method Of Operating The Semiconductor Device |
| US20130163349A1 (en) * | 2011-12-22 | 2013-06-27 | SK Hynix Inc. | Programming pulse generation circuit and non-volatile memory apparatus having the same |
| JP2016167326A (ja) * | 2015-03-09 | 2016-09-15 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| WO2019131025A1 (ja) * | 2017-12-29 | 2019-07-04 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20230081445A1 (en) | 2023-03-16 |
| JP7708759B2 (ja) | 2025-07-15 |
| CN115917651A (zh) | 2023-04-04 |
| WO2022009618A1 (ja) | 2022-01-13 |
| CN115917651B (zh) | 2025-10-17 |
| US12190950B2 (en) | 2025-01-07 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221116 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240606 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20250408 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250425 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20250624 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20250703 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7708759 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |