JPWO2022009618A5 - - Google Patents

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JPWO2022009618A5
JPWO2022009618A5 JP2022534981A JP2022534981A JPWO2022009618A5 JP WO2022009618 A5 JPWO2022009618 A5 JP WO2022009618A5 JP 2022534981 A JP2022534981 A JP 2022534981A JP 2022534981 A JP2022534981 A JP 2022534981A JP WO2022009618 A5 JPWO2022009618 A5 JP WO2022009618A5
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nonvolatile memory
current
memory device
variable resistance
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JP2022534981A
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JP7708759B2 (ja
JPWO2022009618A1 (https=
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JP2022534981A 2020-07-09 2021-06-14 抵抗変化型不揮発性記憶装置およびその書き込み方法 Active JP7708759B2 (ja)

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Application Number Priority Date Filing Date Title
JP2020118177 2020-07-09
JP2020118177 2020-07-09
PCT/JP2021/022553 WO2022009618A1 (ja) 2020-07-09 2021-06-14 抵抗変化型不揮発性記憶装置およびその書き込み方法

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JPWO2022009618A1 JPWO2022009618A1 (https=) 2022-01-13
JPWO2022009618A5 true JPWO2022009618A5 (https=) 2023-03-23
JP7708759B2 JP7708759B2 (ja) 2025-07-15

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US (1) US12190950B2 (https=)
JP (1) JP7708759B2 (https=)
CN (1) CN115917651B (https=)
WO (1) WO2022009618A1 (https=)

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* Cited by examiner, † Cited by third party
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US11315634B1 (en) * 2020-10-20 2022-04-26 International Business Machines Corporation Device comprising tunable resistive elements
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