JP7352754B2 - 半導体モジュール - Google Patents

半導体モジュール Download PDF

Info

Publication number
JP7352754B2
JP7352754B2 JP2022557285A JP2022557285A JP7352754B2 JP 7352754 B2 JP7352754 B2 JP 7352754B2 JP 2022557285 A JP2022557285 A JP 2022557285A JP 2022557285 A JP2022557285 A JP 2022557285A JP 7352754 B2 JP7352754 B2 JP 7352754B2
Authority
JP
Japan
Prior art keywords
conductive
resin
semiconductor element
semiconductor
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022557285A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022080063A1 (cg-RX-API-DMAC10.html
Inventor
昂平 谷川
健二 林
諒介 福田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of JPWO2022080063A1 publication Critical patent/JPWO2022080063A1/ja
Priority to JP2023126991A priority Critical patent/JP7352763B1/ja
Priority to JP2023150336A priority patent/JP7411849B2/ja
Application granted granted Critical
Publication of JP7352754B2 publication Critical patent/JP7352754B2/ja
Priority to JP2023218317A priority patent/JP7708844B2/ja
Priority to JP2025112970A priority patent/JP7731523B1/ja
Priority to JP2025136571A priority patent/JP7757566B1/ja
Priority to JP2025170316A priority patent/JP7776695B1/ja
Priority to JP2025194203A priority patent/JP7795042B1/ja
Priority to JP2025265824A priority patent/JP2026048909A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
    • B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D80/00—Assemblies of multiple devices comprising at least one device covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/10—Configurations of laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07352—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07636—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/641—Dispositions of strap connectors
    • H10W72/646—Dispositions of strap connectors the connected ends being on auxiliary connecting means on bond pads, e.g. on a bump connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/652—Materials of strap connectors comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/691—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/871—Bond wires and strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/763—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/764—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inverter Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2022557285A 2020-10-14 2021-09-14 半導体モジュール Active JP7352754B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2023126991A JP7352763B1 (ja) 2020-10-14 2023-08-03 半導体モジュール
JP2023150336A JP7411849B2 (ja) 2020-10-14 2023-09-15 半導体モジュール
JP2023218317A JP7708844B2 (ja) 2020-10-14 2023-12-25 半導体モジュール
JP2025112970A JP7731523B1 (ja) 2020-10-14 2025-07-03 半導体モジュール
JP2025136571A JP7757566B1 (ja) 2020-10-14 2025-08-19 半導体モジュール
JP2025170316A JP7776695B1 (ja) 2020-10-14 2025-10-08 半導体モジュール
JP2025194203A JP7795042B1 (ja) 2020-10-14 2025-11-13 半導体モジュール
JP2025265824A JP2026048909A (ja) 2020-10-14 2025-12-18 半導体モジュール

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020173335 2020-10-14
JP2020173335 2020-10-14
PCT/JP2021/033676 WO2022080063A1 (ja) 2020-10-14 2021-09-14 半導体モジュール

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023126991A Division JP7352763B1 (ja) 2020-10-14 2023-08-03 半導体モジュール

Publications (2)

Publication Number Publication Date
JPWO2022080063A1 JPWO2022080063A1 (cg-RX-API-DMAC10.html) 2022-04-21
JP7352754B2 true JP7352754B2 (ja) 2023-09-28

Family

ID=81208361

Family Applications (9)

Application Number Title Priority Date Filing Date
JP2022557285A Active JP7352754B2 (ja) 2020-10-14 2021-09-14 半導体モジュール
JP2023126991A Active JP7352763B1 (ja) 2020-10-14 2023-08-03 半導体モジュール
JP2023150336A Active JP7411849B2 (ja) 2020-10-14 2023-09-15 半導体モジュール
JP2023218317A Active JP7708844B2 (ja) 2020-10-14 2023-12-25 半導体モジュール
JP2025112970A Active JP7731523B1 (ja) 2020-10-14 2025-07-03 半導体モジュール
JP2025136571A Active JP7757566B1 (ja) 2020-10-14 2025-08-19 半導体モジュール
JP2025170316A Active JP7776695B1 (ja) 2020-10-14 2025-10-08 半導体モジュール
JP2025194203A Active JP7795042B1 (ja) 2020-10-14 2025-11-13 半導体モジュール
JP2025265824A Pending JP2026048909A (ja) 2020-10-14 2025-12-18 半導体モジュール

Family Applications After (8)

Application Number Title Priority Date Filing Date
JP2023126991A Active JP7352763B1 (ja) 2020-10-14 2023-08-03 半導体モジュール
JP2023150336A Active JP7411849B2 (ja) 2020-10-14 2023-09-15 半導体モジュール
JP2023218317A Active JP7708844B2 (ja) 2020-10-14 2023-12-25 半導体モジュール
JP2025112970A Active JP7731523B1 (ja) 2020-10-14 2025-07-03 半導体モジュール
JP2025136571A Active JP7757566B1 (ja) 2020-10-14 2025-08-19 半導体モジュール
JP2025170316A Active JP7776695B1 (ja) 2020-10-14 2025-10-08 半導体モジュール
JP2025194203A Active JP7795042B1 (ja) 2020-10-14 2025-11-13 半導体モジュール
JP2025265824A Pending JP2026048909A (ja) 2020-10-14 2025-12-18 半導体モジュール

Country Status (5)

Country Link
US (7) US20230245961A1 (cg-RX-API-DMAC10.html)
JP (9) JP7352754B2 (cg-RX-API-DMAC10.html)
CN (8) CN116936486B (cg-RX-API-DMAC10.html)
DE (4) DE112021007737B4 (cg-RX-API-DMAC10.html)
WO (1) WO2022080063A1 (cg-RX-API-DMAC10.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119110995A (zh) * 2022-05-02 2024-12-10 罗姆股份有限公司 半导体装置
DE112023003434T5 (de) * 2022-09-13 2025-06-18 Rohm Co., Ltd. Halbleitervorrichtung
KR20250111089A (ko) * 2022-11-16 2025-07-22 세미컨덕터 콤포넨츠 인더스트리즈 엘엘씨 반도체 전력 모듈 패키지 및 이를 생산하기 위한 방법
DE102022133982A1 (de) * 2022-12-19 2024-06-20 Semikron Danfoss GmbH Leistungsmodul
US20240290697A1 (en) * 2023-02-24 2024-08-29 Sentec E&E Co., Ltd. Power module and manufacturing method and mold thereof
JPWO2024181147A1 (cg-RX-API-DMAC10.html) * 2023-03-02 2024-09-06
JPWO2024257549A1 (cg-RX-API-DMAC10.html) * 2023-06-15 2024-12-19
JP2025024839A (ja) * 2023-08-08 2025-02-21 三菱電機株式会社 半導体モジュール、電力用半導体装置、半導体モジュールの製造方法、電力用半導体装置の製造方法及び電力変換装置
WO2025142351A1 (ja) * 2023-12-26 2025-07-03 ローム株式会社 半導体装置および半導体装置の製造方法
WO2025150351A1 (ja) * 2024-01-11 2025-07-17 ローム株式会社 半導体装置および半導体装置の製造方法
WO2025177812A1 (ja) * 2024-02-20 2025-08-28 ローム株式会社 半導体装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008124522A (ja) 2008-02-21 2008-05-29 Fuji Electric Fa Components & Systems Co Ltd 樹脂封止型半導体装置の設置方法
JP2014123618A (ja) 2012-12-20 2014-07-03 Mitsubishi Electric Corp 半導体モジュール、その製造方法およびその接続方法
JP2015053241A (ja) 2013-09-09 2015-03-19 新電元工業株式会社 半導体装置の端子案内部材、半導体装置及び半導体装置の製造方法
JP2017108187A (ja) 2012-07-19 2017-06-15 三菱電機株式会社 電力用半導体モジュール
WO2018047659A1 (ja) 2016-09-07 2018-03-15 三菱電機株式会社 電力用半導体装置
JP2020072106A (ja) 2018-10-29 2020-05-07 ローム株式会社 半導体装置

Family Cites Families (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927563A (ja) * 1982-08-07 1984-02-14 Mitsubishi Electric Corp 半導体装置
JP2993278B2 (ja) 1992-06-26 1999-12-20 富士電機株式会社 半導体装置
US5408141A (en) 1993-01-04 1995-04-18 Texas Instruments Incorporated Sensed current driving device
US5544412A (en) 1994-05-24 1996-08-13 Motorola, Inc. Method for coupling a power lead to a bond pad in an electronic module
US5532512A (en) 1994-10-03 1996-07-02 General Electric Company Direct stacked and flip chip power semiconductor device structures
JPH09148523A (ja) * 1995-11-21 1997-06-06 Toshiba Corp 半導体装置
JPH104167A (ja) * 1996-06-18 1998-01-06 Toshiba Corp 半導体装置
JP3491481B2 (ja) 1996-08-20 2004-01-26 株式会社日立製作所 半導体装置とその製造方法
CA2255441C (en) * 1997-12-08 2003-08-05 Hiroki Sekiya Package for semiconductor power device and method for assembling the same
JP3547333B2 (ja) 1999-02-22 2004-07-28 株式会社日立産機システム 電力変換装置
JP4220094B2 (ja) 1999-04-05 2009-02-04 三菱電機株式会社 パワー半導体モジュール
JP3630070B2 (ja) 2000-03-30 2005-03-16 株式会社デンソー 半導体チップおよび半導体装置
US6703703B2 (en) * 2000-01-12 2004-03-09 International Rectifier Corporation Low cost power semiconductor module without substrate
JP4177571B2 (ja) 2001-09-20 2008-11-05 三菱電機株式会社 半導体装置
DE10231091A1 (de) 2002-07-10 2004-01-22 Robert Bosch Gmbh Aktivgleichrichter-Modul für Drehstromgeneratoren von Fahrzeugen
JP2004107728A (ja) 2002-09-18 2004-04-08 Ebara Corp 接合材料及び接合方法
JP4007143B2 (ja) * 2002-10-09 2007-11-14 日産自動車株式会社 電子部品、電子部品の製造方法及び製造装置
US6992283B2 (en) 2003-06-06 2006-01-31 Micromass Uk Limited Mass spectrometer
JP2005116556A (ja) * 2003-10-02 2005-04-28 Fuji Electric Fa Components & Systems Co Ltd 樹脂封止型半導体装置の製造方法および設置方法
JP2005136264A (ja) 2003-10-31 2005-05-26 Mitsubishi Electric Corp 電力用半導体装置及び電力用半導体モジュール
JP4004460B2 (ja) 2003-12-16 2007-11-07 三菱電機株式会社 半導体装置
JP4196001B2 (ja) 2004-02-17 2008-12-17 パナソニック株式会社 半導体パワーモジュール
JP2006108247A (ja) 2004-10-01 2006-04-20 Ryosan Co Ltd 液冷ヒートシンク
JP2006190972A (ja) 2004-12-08 2006-07-20 Mitsubishi Electric Corp 電力用半導体装置
US7262444B2 (en) 2005-08-17 2007-08-28 General Electric Company Power semiconductor packaging method and structure
JP4429251B2 (ja) 2005-10-17 2010-03-10 三菱電機株式会社 電力変換装置
JP4450230B2 (ja) 2005-12-26 2010-04-14 株式会社デンソー 半導体装置
JP2007235004A (ja) 2006-03-03 2007-09-13 Mitsubishi Electric Corp 半導体装置
US8680666B2 (en) 2006-05-24 2014-03-25 International Rectifier Corporation Bond wireless power module with double-sided single device cooling and immersion bath cooling
EP2202792B1 (en) 2006-06-09 2016-11-23 Honda Motor Co., Ltd. Semiconductor device
JP5076440B2 (ja) 2006-10-16 2012-11-21 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP5252819B2 (ja) 2007-03-26 2013-07-31 三菱電機株式会社 半導体装置およびその製造方法
US7759777B2 (en) 2007-04-16 2010-07-20 Infineon Technologies Ag Semiconductor module
JP4924411B2 (ja) 2007-12-27 2012-04-25 三菱電機株式会社 電力半導体装置
WO2009093982A1 (en) 2008-01-25 2009-07-30 Iskralab D.O.O. Power switching module
JP2009200416A (ja) 2008-02-25 2009-09-03 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
JP4576448B2 (ja) 2008-07-18 2010-11-10 三菱電機株式会社 電力用半導体装置
JP4634498B2 (ja) 2008-11-28 2011-02-16 三菱電機株式会社 電力用半導体モジュール
JP5245880B2 (ja) * 2009-02-04 2013-07-24 三菱電機株式会社 電力用半導体モジュールとその製造方法
JP4766162B2 (ja) 2009-08-06 2011-09-07 オムロン株式会社 パワーモジュール
JP5407674B2 (ja) 2009-09-02 2014-02-05 サンケン電気株式会社 半導体装置
JP2011086889A (ja) 2009-10-19 2011-04-28 Renesas Electronics Corp 半導体装置およびその製造方法
JP5423811B2 (ja) 2010-01-08 2014-02-19 トヨタ自動車株式会社 半導体モジュール
JP2011160173A (ja) * 2010-02-01 2011-08-18 Seiko Epson Corp 圧電振動子、及び圧電発振器
US9240256B2 (en) 2010-03-15 2016-01-19 Dowa Electronics Materials Co., Ltd. Bonding material and bonding method using the same
JP2011238645A (ja) * 2010-05-06 2011-11-24 Denso Corp パワー半導体モジュール
JP5319601B2 (ja) 2010-05-10 2013-10-16 株式会社東芝 半導体装置及び電力用半導体装置
JP5253455B2 (ja) 2010-06-01 2013-07-31 三菱電機株式会社 パワー半導体装置
JP5858914B2 (ja) 2010-08-04 2016-02-10 ローム株式会社 パワーモジュールおよび出力回路
JP5819052B2 (ja) * 2010-09-09 2015-11-18 ローム株式会社 半導体装置および半導体装置の製造方法
CN103229408A (zh) 2010-12-01 2013-07-31 株式会社安川电机 电力变换装置
JP5464159B2 (ja) 2011-03-08 2014-04-09 三菱電機株式会社 パワーモジュール
JP5287919B2 (ja) 2011-04-01 2013-09-11 トヨタ自動車株式会社 ヒートシンク、およびヒートシンク付き電子部品
JP5602095B2 (ja) 2011-06-09 2014-10-08 三菱電機株式会社 半導体装置
JP5642022B2 (ja) 2011-06-17 2014-12-17 カルソニックカンセイ株式会社 半導体装置および半導体装置の製造方法
JP2013183023A (ja) 2012-03-01 2013-09-12 Toyota Industries Corp 電力変換装置
JP2013258387A (ja) 2012-05-15 2013-12-26 Rohm Co Ltd パワーモジュール半導体装置
US9351423B2 (en) * 2012-06-29 2016-05-24 Denso Corporation Semiconductor device and semiconductor device connection structure
JP5924164B2 (ja) 2012-07-06 2016-05-25 株式会社豊田自動織機 半導体装置
EP4761500A2 (en) 2012-09-20 2026-06-17 Rohm Co., Ltd. Power module semiconductor device and inverter equipment, and fabrication method of the power module semiconductor device, and metallic mold
JP2012248907A (ja) 2012-09-21 2012-12-13 Mitsubishi Electric Corp 電力半導体装置
JP5836993B2 (ja) 2013-03-22 2015-12-24 株式会社日立製作所 インバータ装置
JP6202094B2 (ja) * 2013-05-16 2017-09-27 富士電機株式会社 半導体装置
US9196510B2 (en) * 2013-11-12 2015-11-24 Infineon Technologies Ag Semiconductor package comprising two semiconductor modules and laterally extending connectors
CN105794094B (zh) * 2013-12-04 2018-09-28 三菱电机株式会社 半导体装置
JP6252293B2 (ja) 2014-03-26 2017-12-27 株式会社デンソー 半導体装置
JP6256145B2 (ja) 2014-03-26 2018-01-10 株式会社デンソー 半導体装置及びその製造方法
JP2014135527A (ja) 2014-04-30 2014-07-24 Rohm Co Ltd 半導体パワーモジュールおよびその製造方法
JP6300633B2 (ja) * 2014-05-20 2018-03-28 三菱電機株式会社 パワーモジュール
JP2016039202A (ja) 2014-08-06 2016-03-22 スズキ株式会社 インバータ装置
US10410945B2 (en) 2015-03-23 2019-09-10 Hitachi, Ltd. Semiconductor device
JP6488996B2 (ja) 2015-11-27 2019-03-27 株式会社デンソー 電力変換装置
DE102016000264B4 (de) * 2016-01-08 2022-01-05 Infineon Technologies Ag Halbleiterchipgehäuse, das sich lateral erstreckende Anschlüsse umfasst, und Verfahren zur Herstellung desselben
WO2017130421A1 (ja) * 2016-01-31 2017-08-03 新電元工業株式会社 半導体モジュール
CN108701677B (zh) * 2016-02-24 2022-01-07 日立能源瑞士股份公司 基于多层式电路板的功率模块
EP3246945B1 (en) * 2016-05-19 2018-10-03 ABB Schweiz AG Power module with low stray inductance
JP6920790B2 (ja) 2016-05-24 2021-08-18 ローム株式会社 インテリジェントパワーモジュール、電気自動車またはハイブリッドカー、およびインテリジェントパワーモジュールの組み立て方法
JP6834462B2 (ja) 2016-12-22 2021-02-24 住友金属鉱山株式会社 放熱基板
DE112017007415B4 (de) * 2017-04-06 2023-01-12 Mitsubishi Electric Corporation Halbleiterbauelement, Verfahren zur Herstellung desselben und Leistungswandlervorrichtung
DE212018000073U1 (de) * 2017-04-20 2019-04-03 Rohm Co., Ltd. Halbleiterbauelement
JP7162013B2 (ja) * 2017-05-02 2022-10-27 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト Ｄｃ端子の同軸配列を有するハーフブリッジモジュール
US10978366B2 (en) 2017-05-11 2021-04-13 Mitsubishi Electric Corporation Power module having a hole in a lead frame for improved adhesion with a sealing resin, electric power conversion device, and method for producing power module
US10074590B1 (en) 2017-07-02 2018-09-11 Infineon Technologies Ag Molded package with chip carrier comprising brazed electrically conductive layers
JP6717270B2 (ja) 2017-07-27 2020-07-01 株式会社デンソー 半導体モジュール
CN111758158B (zh) 2018-02-23 2024-01-02 罗姆股份有限公司 半导体装置及功率模块
JP7322369B2 (ja) 2018-09-21 2023-08-08 富士電機株式会社 半導体装置の製造方法
WO2020071185A1 (ja) 2018-10-02 2020-04-09 ローム株式会社 半導体装置および半導体装置の製造方法
JP7273055B2 (ja) 2018-10-24 2023-05-12 ローム株式会社 半導体装置
US11972997B2 (en) 2018-12-03 2024-04-30 Rohm Co., Ltd. Semiconductor device
JP2020092108A (ja) 2018-12-03 2020-06-11 ローム株式会社 半導体装置
JP7267767B2 (ja) * 2019-02-20 2023-05-02 ローム株式会社 半導体装置および半導体装置の製造方法
JP7489241B2 (ja) 2020-06-25 2024-05-23 株式会社 日立パワーデバイス パワーモジュール
WO2022080055A1 (ja) 2020-10-14 2022-04-21 ローム株式会社 半導体モジュール

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008124522A (ja) 2008-02-21 2008-05-29 Fuji Electric Fa Components & Systems Co Ltd 樹脂封止型半導体装置の設置方法
JP2017108187A (ja) 2012-07-19 2017-06-15 三菱電機株式会社 電力用半導体モジュール
JP2014123618A (ja) 2012-12-20 2014-07-03 Mitsubishi Electric Corp 半導体モジュール、その製造方法およびその接続方法
JP2015053241A (ja) 2013-09-09 2015-03-19 新電元工業株式会社 半導体装置の端子案内部材、半導体装置及び半導体装置の製造方法
WO2018047659A1 (ja) 2016-09-07 2018-03-15 三菱電機株式会社 電力用半導体装置
JP2020072106A (ja) 2018-10-29 2020-05-07 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
CN116936486B (zh) 2024-04-05
JP2026048909A (ja) 2026-03-17
CN117712049A (zh) 2024-03-15
DE212021000233U1 (de) 2022-06-23
CN116936486A (zh) 2023-10-24
JP2026021585A (ja) 2026-02-10
JP7757566B1 (ja) 2025-10-21
DE112021002452T5 (de) 2023-02-09
US20260096499A1 (en) 2026-04-02
US20230395476A1 (en) 2023-12-07
WO2022080063A1 (ja) 2022-04-21
US20230395475A1 (en) 2023-12-07
JP7708844B2 (ja) 2025-07-15
JP2023166572A (ja) 2023-11-21
CN116936485A (zh) 2023-10-24
CN116936485B (zh) 2024-11-08
JP7731523B1 (ja) 2025-08-29
US20230245961A1 (en) 2023-08-03
JP2026001208A (ja) 2026-01-06
CN120998881A (zh) 2025-11-21
CN117712049B (zh) 2024-06-07
JP7352763B1 (ja) 2023-09-28
US20250385165A1 (en) 2025-12-18
CN116034465A (zh) 2023-04-28
JP2024029105A (ja) 2024-03-05
JP2023145705A (ja) 2023-10-11
US20240371735A1 (en) 2024-11-07
US11955414B2 (en) 2024-04-09
CN121532055A (zh) 2026-02-13
JPWO2022080063A1 (cg-RX-API-DMAC10.html) 2022-04-21
US20240234265A1 (en) 2024-07-11
DE202021004370U1 (de) 2024-01-18
JP7776695B1 (ja) 2025-11-26
JP7795042B1 (ja) 2026-01-06
DE112021007737B4 (de) 2025-02-13
CN122535284A (zh) 2026-08-07
JP2025169383A (ja) 2025-11-12
US12622334B2 (en) 2026-05-05
JP2025138831A (ja) 2025-09-25
CN118782546A (zh) 2024-10-15
US12068230B2 (en) 2024-08-20
JP7411849B2 (ja) 2024-01-11
US11955413B2 (en) 2024-04-09

Similar Documents

Publication Publication Date Title
JP7352763B1 (ja) 半導体モジュール
JP7352753B2 (ja) 半導体モジュール
JP7354475B1 (ja) 半導体モジュール
WO2022080072A1 (ja) 半導体モジュール
WO2022080114A1 (ja) 半導体モジュール
WO2022080100A1 (ja) 半導体モジュール、および半導体モジュールの製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230704

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20230704

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230718

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230803

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230822

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230915

R150 Certificate of patent or registration of utility model

Ref document number: 7352754

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150