JP7352754B2 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JP7352754B2 JP7352754B2 JP2022557285A JP2022557285A JP7352754B2 JP 7352754 B2 JP7352754 B2 JP 7352754B2 JP 2022557285 A JP2022557285 A JP 2022557285A JP 2022557285 A JP2022557285 A JP 2022557285A JP 7352754 B2 JP7352754 B2 JP 7352754B2
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- Prior art keywords
- conductive
- resin
- semiconductor element
- semiconductor
- main surface
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- 229920005989 resin Polymers 0.000 claims description 279
- 239000011347 resin Substances 0.000 claims description 279
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- 229910052751 metal Inorganic materials 0.000 claims description 136
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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Description
厚さ方向の一方側を向く主面、および前記主面とは反対側を向く裏面を有する導電基板と、
前記主面に電気的に接合され、スイッチング機能を有する半導体素子と、
前記半導体素子を制御するための制御端子と、
前記主面と同じ側を向く樹脂主面および前記樹脂主面とは反対側を向く樹脂裏面を有し、前記導電基板および前記半導体素子と、前記制御端子の一部とを覆う封止樹脂と、を備え、
前記制御端子は、前記樹脂主面から突出し、かつ前記厚さ方向に沿って延びる、半導体モジュール。
付記2.
前記封止樹脂は、前記樹脂主面と前記樹脂裏面との双方に繋がり、かつ前記厚さ方向において前記樹脂主面および前記樹脂裏面に挟まれた樹脂側面を有し、
前記樹脂側面から突き出ており、前記半導体素子に電気的に接続され、かつ電源電圧を取り扱う電源端子を備え、
前記電源端子は、前記厚さ方向の一方側に向く接合面を含む、付記1に記載の半導体モジュール。
付記3.
前記電源端子は、第1電源電圧が入力される第1電源端子と、第2電源電圧を出力する第2電源端子と、を含む、付記2に記載の半導体モジュール。
付記4.
前記主面と前記制御端子との間に介在し、絶縁層を有する制御端子支持体を備える、付記1ないし3のいずれかに記載の半導体モジュール。
付記5.
前記制御端子支持体は、前記絶縁層と、前記絶縁層の前記厚さ方向の一方側に積層された第1金属層と、前記絶縁層の前記厚さ方向の他方側に積層され、かつ前記主面に対向するように前記導電基板に接合された第2金属層と、を有する、付記4に記載の半導体モジュール。
付記6.
前記制御端子は、導電性接合材を介して前記第1金属層に接合される、付記5に記載の半導体モジュール。
付記7.
導電性のワイヤをさらに備えており、
前記半導体素子は、前記主面と同じ側を向く素子主面と、前記素子主面とは反対側を向く素子裏面と、前記素子主面に配置されたゲート電極と、を有し、
前記ゲート電極と前記第1金属層とに、前記導電性のワイヤが接続される、付記6に記載の半導体モジュール。
付記8.
前記制御端子は、前記第1金属層に接合され、導電性を有する筒状のホルダと、前記ホルダに圧入されるとともに前記厚さ方向に延びる金属ピンと、を含む、付記6または7に記載の半導体モジュール。
付記9.
前記ホルダの一部は、前記厚さ方向の一方側において前記封止樹脂から露出している、付記8に記載の半導体モジュール。
付記10.
前記封止樹脂に接合された樹脂部をさらに備え、
前記樹脂部は、前記ホルダにおいて前記封止樹脂から露出する部分と、前記金属ピンの一部と、を覆う、付記9に記載の半導体モジュール。
付記11.
前記導電基板は、前記厚さ方向に対して直角である第1方向の一方側および他方側に互いに離間して配置された第1導電部および第2導電部を含み、
前記第1電源端子は、前記第1半導体素子に対して前記第1方向一方側に位置し、前記第1導電部に繋がる第1入力端子と、前記第1半導体素子に対して前記第1方向一方側に位置し、前記第2半導体素子に接続される第2入力端子と、を含み、
前記第2電源端子は、前記第2半導体素子に対して前記第1方向他方側に位置し、前記第2導電部に繋がる出力端子であり、
前記制御端子は、前記第1半導体素子を制御する第1制御端子と、前記第2半導体素子を制御する第2制御端子と、を含み、
前記第1制御端子は、前記第1導電部に支持され、かつ前記第1方向において前記第1半導体素子と前記第1入力端子および前記第2入力端子との間に配置されており、
前記第2制御端子は、前記第2導電部に支持され、かつ前記第1方向において前記第2半導体素子と前記出力端子との間に配置されている、付記3に記載の半導体モジュール。
付記12.
前記厚さ方向および前記第1方向の双方に直角である第2方向に間隔を隔てて配置された複数の前記第1半導体素子と、
前記第2方向に間隔を隔てて配置された複数の前記第1制御端子と、
前記第2方向に間隔を隔てて配置された複数の前記第2半導体素子と、
前記第2方向に間隔を隔てて配置された複数の前記第2制御端子と、を備える、付記11に記載の半導体モジュール。
付記13.
前記封止樹脂は、前記樹脂主面から突出し、各々の先端に突出端面が形成された複数の突出部を有し、
前記複数の突出部における前記突出端面は、それぞれ前記樹脂主面と平行であり、かつ同一平面上にある、付記1ないし12のいずれかに記載の半導体モジュール。
付記14.
前記制御端子は、振動による衝撃を吸収するためのクッション部を有する、付記1ないし13のいずれかに記載の半導体モジュール。
付記15.
前記クッション部は、前記封止樹脂から露出している、付記14に記載の半導体モジュール。
付記16.
厚さ方向の一方側を向く主面、および前記主面とは反対側を向く裏面を有する導電基板と、
前記主面に電気的に接合され、スイッチング機能を有する半導体素子と、
前記半導体素子を制御するための制御端子と、
前記主面と同じ側を向く樹脂主面および前記樹脂主面とは反対側を向く樹脂裏面を有し、前記導電基板および前記半導体素子と、前記制御端子の一部とを覆う封止樹脂と、を備え、
前記制御端子は、前記樹脂主面から突出し、かつ前記厚さ方向に沿って延びる、半導体モジュール。
付記17.
前記主面と前記制御端子との間に介在し、絶縁層を有する制御端子支持体を備える、付記16に記載の半導体モジュール。
付記18.
前記制御端子支持体は、前記絶縁層と、前記絶縁層の前記厚さ方向の一方側に積層された第1金属層と、前記絶縁層の前記厚さ方向の他方側に積層され、かつ前記主面に対向するように前記導電基板に接合された第2金属層と、を有する、付記17に記載の半導体モジュール。
付記19.
前記制御端子は、導電性接合材を介して前記第1金属層に接合される、付記18に記載の半導体モジュール。
付記20.
前記半導体素子は、前記主面と同じ側を向く素子主面と、前記素子主面とは反対側を向く素子裏面と、前記素子主面に配置されたゲート電極と、を有し、
前記ゲート電極と前記第1金属層とに、導電性のワイヤが接続される、付記19に記載の半導体モジュール。
付記21.
前記制御端子は、前記第1金属層に接合され、導電性を有する筒状のホルダと、前記ホルダに圧入されるとともに前記厚さ方向に延びる金属ピンと、を含む、付記19または20に記載の半導体モジュール。
付記22.
前記ホルダの一部は、前記厚さ方向の一方側において前記封止樹脂から露出している、付記21に記載の半導体モジュール。
付記23.
前記封止樹脂に接合された樹脂部をさらに備え、
前記樹脂部は、前記ホルダにおいて前記封止樹脂から露出する部分と、前記金属ピンの一部と、を覆う、付記22に記載の半導体モジュール。
付記24.
前記導電基板は、前記厚さ方向に見て互いに離間し、かつ前記厚さ方向に対して直角である第1方向の一方側および他方側に配置された第1導電部および第2導電部を含み、
前記半導体素子は、前記第1導電部に電気的に接合された第1半導体素子と、前記第2導電部に電気的に接合された第2半導体素子と、を含み、
前記第1半導体素子に対して前記第1方向一方側に位置し、前記第1導電部に繋がる第1入力端子と、
前記第1半導体素子に対して前記第1方向一方側に位置し、前記第2半導体素子に接続される第2入力端子と、
前記第2半導体素子に対して前記第1方向他方側に位置し、前記第2導電部に繋がる出力端子と、をさらに備え、
前記制御端子は、前記第1半導体素子を制御する第1制御端子と、前記第2半導体素子を制御する第2制御端子と、を含み、
前記第1制御端子は、前記第1導電部に支持され、かつ前記第1方向において前記第1半導体素子と前記第1入力端子および前記第2入力端子との間に配置されており、
前記第2制御端子は、前記第2導電部に支持され、かつ前記第1方向において前記第2半導体素子と前記出力端子との間に配置されている、付記16ないし23のいずれかに記載の半導体モジュール。
付記25.
前記厚さ方向および前記第1方向の双方に直角である第2方向に間隔を隔てて配置された複数の前記第1半導体素子と、
前記第2方向に間隔を隔てて配置された複数の前記第1制御端子と、
前記第2方向に間隔を隔てて配置された複数の前記第2半導体素子と、
前記第2方向に間隔を隔てて配置された複数の前記第2制御端子と、を備える、付記24に記載の半導体モジュール。
付記26.
前記封止樹脂は、前記樹脂主面から突出し、各々の先端に突出端面が形成された複数の突出部を有し、
前記複数の突出部における前記突出端面は、それぞれ前記樹脂主面と平行であり、かつ同一平面上にある、付記16ないし25のいずれかに記載の半導体モジュール。
付記27.
前記制御端子は、振動による衝撃を吸収するためのクッション部を有する、付記16ないし26のいずれかに記載の半導体モジュール。
付記28.
前記クッション部は、前記封止樹脂から露出している、付記27に記載の半導体モジュール。
10:半導体素子 10A:第1半導体素子
10B:第2半導体素子 101:素子主面
102:素子裏面 11:第1主面電極(ゲート電極)
12:第2主面電極(ソース電極) 13:第3主面電極
14:第4主面電極 15:裏面電極(ドレイン電極)
16:第5主面電極 171,172,173,174:角
181,182,183,184:角 191:第1辺
192:第2辺 193:第3辺
194:第4辺 2:導電基板
2A:第1導電部 2B:第2導電部
201:主面 201a:凹部
201b:凹部端縁 202:裏面
21:基材 22:主面接合層
23:裏面接合層 3:支持基板
301:支持面 302:底面
31:絶縁層 32:第1金属層
32A:第1部 32B:第2部
321:第1接合層 33:第2金属層
41:第1入力端子 411:入力側接合面
412:入力側側面 413:先端面
414:側方面 42:第2入力端子
421:入力側接合面 422:入力側側面
423:先端面 424:側方面
43:第3入力端子 431:入力側接合面
432:入力側側面 433:先端面
434:側方面 44:出力端子
441:出力側接合面 442:出力側側面
443:先端面 444:側方面
45:制御端子 451:ホルダ
452:金属ピン 452a:クッション部
459:導電性接合材
46A,46B,46C,46D,46E:第1制御端子
47A,47B,47C,47D:第2制御端子
5:制御端子支持体 51:絶縁層
52:第1金属層 521:第1部
522:第2部 523:第3部
524:第4部 525:第5部
53:第2金属層 59:接合材
6:導通部材 601:第1部
61:第1導通部材 61h:開口
62:第2導通部材 62A:第1部
62B:第2部 621:第1配線部
622:第2配線部 623:第3配線部
623a:凹状領域 623h:開口
624:第4配線部 625:第1帯状部
625a:凸状領域 625h:開口
626:第2帯状部 627:第1端縁
628:第2端縁 63:開口
69:導電性接合材 71:第1導電性接合材
711:第1基層 712:第1層
713:第2層 72:第2導電性接合材
721:第2基層 722:第3層
723:第4層 731:ワイヤ
731a:第1ワイヤ 731b:第2ワイヤ
732,733,734,735:ワイヤ
8:封止樹脂 81:樹脂主面
82:樹脂裏面 831,832:樹脂側面
832a:凹部 833,834:樹脂側面
851:第1突出部 851a:第1突出端面
851b:凹部 851c:内壁面
852:第2突出部 86:樹脂空隙部
861:樹脂空隙部端縁 87:樹脂部
88:樹脂充填部 91:金型
911:押さえピン
Claims (14)
- 厚さ方向の一方側を向く主面、および前記主面とは反対側を向く裏面を有する導電基板と、
前記主面に電気的に接合され、スイッチング機能を有する半導体素子と、
前記半導体素子を制御するための制御端子と、
前記主面と同じ側を向く樹脂主面および前記樹脂主面とは反対側を向く樹脂裏面を有し、前記導電基板および前記半導体素子と、前記制御端子の一部とを覆う封止樹脂と、を備え、
前記制御端子は、前記樹脂主面から突出し、かつ前記厚さ方向に沿って延びており、
前記主面と前記制御端子との間に介在し、絶縁層を有する制御端子支持体をさらに備える、半導体モジュール。 - 前記封止樹脂は、前記樹脂主面と前記樹脂裏面との双方に繋がり、かつ前記厚さ方向において前記樹脂主面および前記樹脂裏面に挟まれた樹脂側面を有し、
前記樹脂側面から突き出ており、前記半導体素子に電気的に接続され、かつ電源電圧を取り扱う電源端子を備え、
前記電源端子は、前記厚さ方向の一方側に向く接合面を含む、請求項1に記載の半導体モジュール。 - 前記電源端子は、第1電源電圧が入力される第1電源端子と、第2電源電圧を出力する第2電源端子と、を含む、請求項2に記載の半導体モジュール。
- 前記制御端子支持体は、前記絶縁層と、前記絶縁層の前記厚さ方向の一方側に積層された第1金属層と、前記絶縁層の前記厚さ方向の他方側に積層され、かつ前記主面に対向するように前記導電基板に接合された第2金属層と、を有する、請求項1に記載の半導体モジュール。
- 前記制御端子は、導電性接合材を介して前記第1金属層に接合される、請求項4に記載の半導体モジュール。
- 前記半導体素子は、前記主面と同じ側を向く素子主面と、前記素子主面とは反対側を向く素子裏面と、前記素子主面に配置されたゲート電極と、を有し、
前記ゲート電極と前記第1金属層とに、導電性のワイヤが接続される、請求項5に記載の半導体モジュール。 - 前記制御端子は、前記第1金属層に接合され、導電性を有する筒状のホルダと、前記ホルダに圧入されるとともに前記厚さ方向に延びる金属ピンと、を含む、請求項5に記載の半導体モジュール。
- 前記ホルダの一部は、前記厚さ方向の一方側において前記封止樹脂から露出している、請求項7に記載の半導体モジュール。
- 前記封止樹脂に接合された樹脂部をさらに備え、
前記樹脂部は、前記ホルダにおいて前記封止樹脂から露出する部分と、前記金属ピンの一部と、を覆う、請求項8に記載の半導体モジュール。 - 前記導電基板は、前記厚さ方向に対して直角である第1方向の一方側および他方側に互いに離間して配置された第1導電部および第2導電部を含み、
前記半導体素子は、前記第1導電部に電気的に接合された第1半導体素子と、前記第2導電部に電気的に接合された第2半導体素子と、を含み、
前記第1電源端子は、前記第1半導体素子に対して前記第1方向一方側に位置し、前記第1導電部に繋がる第1入力端子と、前記第1半導体素子に対して前記第1方向一方側に位置し、前記第2半導体素子に接続される第2入力端子と、を含み、
前記第2電源端子は、前記第2半導体素子に対して前記第1方向他方側に位置し、前記第2導電部に繋がる出力端子であり、
前記制御端子は、前記第1半導体素子を制御する第1制御端子と、前記第2半導体素子を制御する第2制御端子と、を含み、
前記第1制御端子は、前記第1導電部に支持され、かつ前記第1方向において前記第1半導体素子と前記第1入力端子および前記第2入力端子との間に配置されており、
前記第2制御端子は、前記第2導電部に支持され、かつ前記第1方向において前記第2半導体素子と前記出力端子との間に配置されている、請求項3に記載の半導体モジュール。 - 前記厚さ方向および前記第1方向の双方に直角である第2方向に間隔を隔てて配置された複数の前記第1半導体素子と、
前記第2方向に間隔を隔てて配置された複数の前記第1制御端子と、
前記第2方向に間隔を隔てて配置された複数の前記第2半導体素子と、
前記第2方向に間隔を隔てて配置された複数の前記第2制御端子と、を備える、請求項10に記載の半導体モジュール。 - 前記封止樹脂は、前記樹脂主面から突出し、各々の先端に突出端面が形成された複数の突出部を有し、
前記複数の突出部における前記突出端面は、それぞれ前記樹脂主面と平行であり、かつ同一平面上にある、請求項1ないし11のいずれかに記載の半導体モジュール。 - 前記制御端子は、振動による衝撃を吸収するためのクッション部を有する、請求項1ないし11のいずれかに記載の半導体モジュール。
- 前記クッション部は、前記封止樹脂から露出している、請求項13に記載の半導体モジュール。
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