JP7177574B2 - テクスチャ形成されたイリジウム底部電極を有する酸化ハフニウムおよび酸化ジルコニウムベースの強誘電性デバイス - Google Patents
テクスチャ形成されたイリジウム底部電極を有する酸化ハフニウムおよび酸化ジルコニウムベースの強誘電性デバイス Download PDFInfo
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- 229910000449 hafnium oxide Inorganic materials 0.000 title claims description 30
- 229910052741 iridium Inorganic materials 0.000 title claims description 27
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 title claims description 24
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 title claims description 13
- 229910001928 zirconium oxide Inorganic materials 0.000 title claims description 11
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 title claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 135
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
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- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
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- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
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- 238000002955 isolation Methods 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
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- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 229910000505 Al2TiO5 Inorganic materials 0.000 description 1
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- 229910052779 Neodymium Inorganic materials 0.000 description 1
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- QEQWDEBBDASYQQ-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[O--].[Sr++].[Ta+5].[Bi+3] Chemical compound [O--].[O--].[O--].[O--].[O--].[Sr++].[Ta+5].[Bi+3] QEQWDEBBDASYQQ-UHFFFAOYSA-N 0.000 description 1
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- 231100000027 toxicology Toxicity 0.000 description 1
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- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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- H10B—ELECTRONIC MEMORY DEVICES
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- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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- H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
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- H01L21/02104—Forming layers
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- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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Description
Claims (20)
- 強誘電性/反強誘電性(FE/AFE)誘電層を形成する方法であって、
基板上にプラチナまたはイリジウムの金属電極層を形成するステップであって、前記金属電極層は、少なくとも80%の{111}結晶面を有する露出表面を有する、前記金属電極層を形成するステップと、
前記金属電極層の前記露出表面上にFE/AFE誘電層を形成するステップであって、前記FE/AFE誘電層は、極性の非中心対称結晶相を有する、酸化ジルコニウム(ZrO)または酸化ハフニウム(HfO)である、前記FE/AFE誘電層を形成するステップと
を含む、方法。 - 前記金属電極層は、物理蒸着(PVD)によって形成される、請求項1に記載の方法。
- 前記FE/AFE誘電層は、原子層堆積法(ALD)または化学溶液堆積法によって形成される、請求項1または2に記載の方法。
- 前記FE/AFE誘電層は、化学量論的酸化ハフニウム(HfO2)または化学量論的酸化ジルコニウム(ZrO2)である、請求項1または2に記載の方法。
- 前記FE/AFE誘電層の上に第2の金属電極層を形成するステップをさらに含む、請求項1~4のいずれか一項に記載の方法。
- 前記金属電極層は、約250℃から約600℃の範囲の温度にて形成される、請求項1~5のいずれか一項に記載の方法。
- 前記金属電極層の前記露出表面は、2nm RMS未満の粗度を有する、請求項1~6のいずれか一項に記載の方法。
- 前記金属電極層は、多結晶であり、前記多結晶の金属電極層の結晶粒の露出表面が、前記金属電極層の前記露出表面を形成する、90%以上100%以下の{111}結晶面を有するように配置される、請求項1~7のいずれか一項に記載の方法。
- 前記金属電極層が、イリジウムである、請求項1~8のいずれか一項に記載の方法。
- 前記FE/AFE誘電層が、酸化ジルコニウム(ZrO)であり、かつ、前記金属電極層が、プラチナである、請求項1~8のいずれか一項に記載の方法。
- 前記金属電極層および前記FE/AFE誘電層の粒度は、前記金属電極層および前記FE/AFE誘電層が構成するコンデンサの寸法よりも大きい、請求項1~10のいずれか一項に記載の方法。
- 強誘電性/反強誘電性(FE/AFE)誘電層を有する可変コンデンサを形成する方法であって、
基板上にプラチナまたはイリジウムの金属電極層を形成するステップであって、前記金属電極層は、少なくとも80%の{111}結晶面を有する露出表面を有する、金属電極層を形成するステップと
前記金属電極層の前記露出表面上にFE/AFE誘電層を形成するステップであって、前記FE/AFE誘電層は、極性の非中心対称結晶相を有する、酸化ジルコニウム(ZrO)または酸化ハフニウム(HfO)である、前記FE/AFE誘電層を形成するステップと、
前記FE/AFE誘電層の上に第2の金属電極層を形成するステップと、
前記金属電極層、FE/AFE誘電層および第2の金属電極層をパターン形成して約20nmから約100nmの範囲の幅を有する前記可変コンデンサを形成するステップとを含む、方法。 - 前記金属電極層は、イリジウムである、請求項12に記載の方法。
- 前記FE/AFE誘電層は、酸化ジルコニウム(ZrO)であり、前記金属電極層は、プラチナである、請求項12に記載の方法。
- 強誘電性/反強誘電性デバイスであって、
基板上のプラチナまたはイリジウムの金属電極層であって、前記金属電極層は、少なくとも80%の{111}結晶面を有する露出表面を有する金属電極層と、
前記金属電極層の前記露出表面上のFE/AFE誘電層であって、前記FE/AFE誘電層は、極性の非中心対称結晶相を有する、酸化ジルコニウム(ZrO)または酸化ハフニウム(HfO)である、前記FE/AFE誘電層と、
前記FE/AFE誘電層の上の第2の金属電極層と、
前記金属電極層に対する第1の電気リードおよび前記第2の金属電極層に対する第2の電気リードと
を含む、強誘電性/反強誘電性デバイス。 - 前記金属電極層は、イリジウムである、請求項15に記載の強誘電性/反強誘電性デバイス。
- 前記FE/AFE誘電層は、酸化ジルコニウム(ZrO)であり、前記金属電極層は、プラチナである、請求項15に記載の強誘電性/反強誘電性デバイス。
- 前記第1の電気リードは、トランジスタに電気的に接続されて、強誘電性ダイナミック・ランダム・アクセス・メモリ(FeRAM)セルを形成する、請求項15~17のいずれか一項に記載の強誘電性/反強誘電性デバイス。
- 前記トランジスタは、金属-酸化物-半導体電界効果トランジスタ(MOSFET)、フィン電界効果トランジスタ(FinFET)、または縦型輸送電界効果トランジスタ(VT FinFET)である、請求項18に記載の強誘電性/反強誘電性デバイス。
- 前記FE/AFE誘電層は、約20nmから約100nmの範囲の幅W1を有する、請求項19に記載の強誘電性/反強誘電性デバイス。
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