JP7150342B2 - Rfサーキュレータ - Google Patents
Rfサーキュレータ Download PDFInfo
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- JP7150342B2 JP7150342B2 JP2019556333A JP2019556333A JP7150342B2 JP 7150342 B2 JP7150342 B2 JP 7150342B2 JP 2019556333 A JP2019556333 A JP 2019556333A JP 2019556333 A JP2019556333 A JP 2019556333A JP 7150342 B2 JP7150342 B2 JP 7150342B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/32—Non-reciprocal transmission devices
- H01P1/38—Circulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/32—Non-reciprocal transmission devices
- H01P1/36—Isolators
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0018—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents
- C03C10/0027—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents containing SiO2, Al2O3, Li2O as main constituents
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0054—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing PbO, SnO2, B2O3
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/095—Glass compositions containing silica with 40% to 90% silica, by weight containing rare earths
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/04—Compositions for glass with special properties for photosensitive glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/52—One-way transmission networks, i.e. unilines
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2204/00—Glasses, glazes or enamels with special properties
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
- H03H2001/005—Wound, ring or feed-through type inductor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
- H03H2001/0057—Constructional details comprising magnetic material
Description
なし。
なし。
Claims (12)
- シリカ、酸化リチウム、酸化アルミニウム、及び酸化セリウムを含む、単一の感光性ガラスセラミック複合基板;
前記基板内、又は前記基板上に形成される、1又は2以上の導電コイル;及び
前記基板内の開口内に形成される、鉄芯;
を含む、サーキュレータ/アイソレータデバイスであって、
前記1又は2以上の導電コイルが形成され、かつ前記鉄芯が、前記基板内のサーキュレータ/アイソレータを作出するように前記1又は2以上の導電コイルに対して配置及び成形され、
前記1又は2以上の導電コイルが、1又は2以上のデバイスに接続されるように構成される、前記サーキュレータ/アイソレータデバイス。 - 環境からデバイスを保護するために、前記デバイス上にパッシベーション又はコーティングをさらに含む、請求項1に記載のデバイス。
- 鉄芯が、溶融又は焼結された鉄粒子、鉄マイクロ粒子、又は鉄ナノ粒子を含む、請求項1に記載のデバイス。
- 1又は2以上の導電コイルが銅を含む、請求項1に記載のデバイス。
- シグナル入力対シグナル出力の50%、40%、30%、25%、20%、15%、又は10%未満の損失を有する、
請求項1に記載のデバイス。 - 基板が、60~76重量%のシリカ;K2OとNa2Oとの組合せが6~16重量%となる少なくとも3重量%のK2O;0.003~1重量%の、Ag2O及びAu2Oからなる群から選択される少なくとも1つの酸化物;0.003~2重量%のCu2O;B2O3とAl2O3との組合せが13重量%を超えない、0.75~7重量%のB2O3及び6~7重量%のAl2O3 ;8~15重量%のLi2O;並びに0.001~0.1重量%のCeO2 の組成物を含むか、あるいは基板が、35~76重量%のシリカ;3~16重量%のK2O;0.003~1重量%のAg2O;0.75~13重量%のB2O3 ;8~15重量%のLi2O;及び0.001~0.1重量%のCeO2 の組成物を含むか、あるいは基板が、少なくとも0.3重量%のSb2O3又はAs2O 3 ;又は0.003~1重量%のAu2 O;又は1~18重量%の、CaO、ZnO、PbO、MgO、及びBaOからなる群から選択される酸化物、のうちの少なくとも1つを含み、かつ、
暴露された部分と暴露されていない部分の異方性エッチング比が、10~20:1、21~29:1、30~45:1、20~40:1、41~45:1、及び30~50:1のうちの少なくとも1つであってもよい、
請求項1に記載のデバイス。 - シリカ、酸化リチウム、酸化アルミニウム、及び酸化セリウムを含む感光性ガラスセラミック基板を提供するステップと、
前記基板上又は前記基板内に1又は2以上の導電コイルを形成するステップと、
前記基板内に開口をエッチングするステップと、
前記開口内に鉄粒子を堆積させるステップと、
前記1又は2以上の導電コイルの形成後に、前記鉄粒子を溶融又は焼結させて、前記基板内の鉄芯にするステップであって、前記1又は2以上の導電コイルが形成され、かつ前記鉄芯が、前記基板内のサーキュレータ/アイソレータを作出するように前記1又は2以上の導電コイルに対して配置及び成形されるステップと、
前記1又は2以上の導電コイルにコネクタを形成するステップであって、前記コネクタが1又は2以上のデバイスに接続されるように構成されるステップと
を具備する、サーキュレータ/アイソレータデバイスを作製するための方法。 - 環境からサーキュレータ/アイソレータデバイスを保護するために、前記サーキュレータ/アイソレータデバイス上にパッシベーション又はコーティングを形成するステップをさらに具備する、請求項7に記載の方法。
- 方法が、
1又は2以上の導電コイルを形成するステップの後に、希ガスの存在下で鉄芯を形成するステップをさらに具備する、請求項7に記載の方法。 - 1又は2以上の導電コイルが銅を含む、請求項7に記載の方法。
- サーキュレータ/アイソレータデバイスが、シグナル入力対シグナル出力の50%、40%、30%、25%、20%、15%、又は10%未満の損失を有する、請求項7に記載の方法。
- 基板が、60~76重量%のシリカ;K2OとNa2Oとの組合せが6~16重量%となる少なくとも3重量%のK2O;0.003~1重量%の、Ag2O及びAu2Oからなる群から選択される少なくとも1つの酸化物;0.003~2重量%のCu2O;B2O3とAl2O3との組合せが13重量%を超えない、0.75~7重量%のB2O3及び6~7重量%のAl2O3 ;8~15重量%のLi2O;並びに0.001~0.1重量%のCeO2 の組成物を含むか、あるいは基板が、35~76重量%のシリカ;3~16重量%のK2O;0.003~1重量%のAg2O;0.75~13重量%のB2O3 ;8~15重量%のLi2O;及び0.001~0.1重量%のCeO2 の組成物を含むか;あるいは基板が、少なくとも0.3重量%のSb2O3又はAs2O 3 ;又は0.003~1重量%のAu2 O;又は1~18重量%の、CaO、ZnO、PbO、MgO、及びBaOからなる群から選択される酸化物;のうちの少なくとも1つを含み、かつ、
暴露された部分と暴露されていない部分の異方性エッチング比が、10~20:1、21~29:1、30~45:1、20~40:1、41~45:1、及び30~50:1のうちの少なくとも1つであってもよい、請求項7に記載の方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022043710A JP2022084783A (ja) | 2017-04-28 | 2022-03-18 | Rfサーキュレータ |
JP2022149082A JP2022177191A (ja) | 2017-04-28 | 2022-09-20 | Rfサーキュレータ |
Applications Claiming Priority (3)
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---|---|---|---|
US201762491918P | 2017-04-28 | 2017-04-28 | |
US62/491,918 | 2017-04-28 | ||
PCT/US2018/029559 WO2018200804A1 (en) | 2017-04-28 | 2018-04-26 | Rf circulator |
Related Child Applications (2)
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---|---|---|---|
JP2022043710A Division JP2022084783A (ja) | 2017-04-28 | 2022-03-18 | Rfサーキュレータ |
JP2022149082A Division JP2022177191A (ja) | 2017-04-28 | 2022-09-20 | Rfサーキュレータ |
Publications (2)
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JP2020520135A JP2020520135A (ja) | 2020-07-02 |
JP7150342B2 true JP7150342B2 (ja) | 2022-10-11 |
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JP2019556333A Active JP7150342B2 (ja) | 2017-04-28 | 2018-04-26 | Rfサーキュレータ |
JP2022043710A Pending JP2022084783A (ja) | 2017-04-28 | 2022-03-18 | Rfサーキュレータ |
JP2022149082A Pending JP2022177191A (ja) | 2017-04-28 | 2022-09-20 | Rfサーキュレータ |
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JP2022043710A Pending JP2022084783A (ja) | 2017-04-28 | 2022-03-18 | Rfサーキュレータ |
JP2022149082A Pending JP2022177191A (ja) | 2017-04-28 | 2022-09-20 | Rfサーキュレータ |
Country Status (6)
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US (1) | US11101532B2 (ja) |
EP (1) | EP3616254B1 (ja) |
JP (3) | JP7150342B2 (ja) |
KR (3) | KR102524712B1 (ja) |
CA (1) | CA3058793C (ja) |
WO (1) | WO2018200804A1 (ja) |
Families Citing this family (13)
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WO2015171597A1 (en) | 2014-05-05 | 2015-11-12 | 3D Glass Solutions, Inc. | 2d and 3d inductors antenna and transformers fabricating photoactive substrates |
AU2018297035B2 (en) | 2017-07-07 | 2021-02-25 | 3D Glass Solutions, Inc. | 2D and 3D RF lumped element devices for RF system in a package photoactive glass substrates |
CA3084818C (en) | 2017-12-15 | 2023-01-17 | 3D Glass Solutions, Inc. | Coupled transmission line resonate rf filter |
KR102600200B1 (ko) | 2018-01-04 | 2023-11-10 | 3디 글래스 솔루션즈 인코포레이티드 | 고효율 rf 회로들을 위한 임피던스 정합 도전성 구조 |
JP6976409B2 (ja) | 2018-05-29 | 2021-12-08 | スリーディー グラス ソリューションズ, インク3D Glass Solutions, Inc | 低挿入損失rf伝送線路 |
KR102322938B1 (ko) | 2018-09-17 | 2021-11-09 | 3디 글래스 솔루션즈 인코포레이티드 | 접지면을 갖는 고효율 컴팩트형 슬롯 안테나 |
JP7257707B2 (ja) | 2018-12-28 | 2023-04-14 | スリーディー グラス ソリューションズ,インク | 環状コンデンサrf、マイクロ波及びmm波システム |
KR102393450B1 (ko) | 2018-12-28 | 2022-05-04 | 3디 글래스 솔루션즈 인코포레이티드 | 광활성 유리 기판들에서 rf, 마이크로파, 및 mm 파 시스템들을 위한 이종 통합 |
KR20220079672A (ko) * | 2019-10-14 | 2022-06-13 | 3디 글래스 솔루션즈 인코포레이티드 | 고온 인쇄 회로판 기판 |
JP2023516817A (ja) | 2020-04-17 | 2023-04-20 | スリーディー グラス ソリューションズ,インク | 広帯域誘導 |
EP4165718A1 (en) * | 2020-06-12 | 2023-04-19 | Northrop Grumman Systems Corporation | Integrated circulator system |
CN112366437A (zh) * | 2020-10-16 | 2021-02-12 | 武汉心浩智能科技有限公司 | 一种环行器的装配工艺 |
KR102524563B1 (ko) | 2020-11-06 | 2023-04-20 | 전북대학교산학협력단 | 시간 변조 대역통과여파기를 사용한 주파수 가변 임피던스 정합 대역통과 비자성체 서큘레이터 |
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