JP7034235B2 - 表示装置、ガラス基板およびガラス基板の製造方法 - Google Patents
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Description
本発明は、次の実施の形態が可能である。
前記裏面接続体および前記表面接続体が第2の絶縁層に覆われ、
前記他方の面側における第2絶縁層の上面が前記第1の絶縁層の上面よりも低い位置となり、
前記一方の面側における第2絶縁層の上面が前記画素構成体配置材の上面よりも低い位置であってもよい。
1h ガラス基板の表面(一方の主面)
1r ガラス基板の裏面(他方の主面)
1s ガラス基板の側面
2p 入力電極
6 駆動素子
14 発光素子
30 側面配線
31 裏面接続体
35 裏面電極
36 オーバーコート層
37 表面接続体
51 絶縁性平坦化層
52 裏面絶縁層
Claims (7)
- 一方の主面に配置された複数の画素構成体と、
前記一方の主面に配置され、前記画素構成体に駆動信号を入力する入力電極と、
他方の主面に配置され、前記入力電極に電気的に接続された裏面接続体と、を有するガラス基板であって、
前記他方の主面において、前記複数の画素構成体を有する有効領域に位置して、第1の絶縁層が配置され、
前記第1の絶縁層の上面が、前記裏面接続体の上面よりも高く配置されており、
前記一方の主面側であって、前記画素構成体と前記ガラス基板との間に画素構成体配置材が設けられ、
前記画素構成体配置材の上面の前記一方の主面からの高さが、前記第1の絶縁層の上面の前記他方の主面からの高さよりも低く、
前記他方の主面に前記画素構成体を駆動する駆動素子が配置されており、前記駆動素子の配置位置は前記第1の絶縁層の配置位置以外であるガラス基板。 - 前記裏面接続体が第2の絶縁層に覆われており、前記第1の絶縁層の上面が前記第2の絶縁層の上面よりも高く配置されている請求項1に記載のガラス基板。
- 前記入力電極と前記裏面接続体とを接続する配線が、2つの主面に隣接する側面に配された側面配線である請求項1または2に記載のガラス基板。
- 一方の主面側に、画素構成体に駆動信号を入力する入力電極を形成し、
他方の主面側に、前記入力電極に電気的に接続される裏面接続体を形成するガラス基板の製造方法であって、
前記一方の主面側であって、前記画素構成体と前記ガラス基板との間に画素構成体配置材を設け、
前記他方の主面側に、前記裏面接続体を構成する裏面電極を形成した後に第1の絶縁層を形成し、
その後に、前記入力電極と前記裏面電極とを電気的に接続する側面配線を形成し、
前記側面配線の形成と同時に裏面接続体を形成し、
前記第1の絶縁層の上面の前記他方の主面からの高さを、前記裏面接続体の上面の高さよりも高くするとともに前記画素構成体配置材の上面の前記一方の主面からの高さよりも高くするガラス基板の製造方法。 - 前記裏面接続体を形成した後に、前記裏面接続体を覆う第2の絶縁層を形成し、前記第2の絶縁層の上面の高さを前記第1の絶縁層の上面の高さよりも低くする請求項4に記載のガラス基板の製造方法。
- 前記第1の絶縁層を形成した後、前記画素構成体を駆動する駆動素子を前記他方の主面側の前記第1の絶縁層が形成されていない位置に搭載する請求項4または5に記載のガラス基板の製造方法。
- 主面および側面を有するガラス基板と、
前記ガラス基板の一方の主面側に配置された画素構成体と、
前記一方の主面側に配置され、前記画素構成体に駆動信号を入力する入力電極と、
前記ガラス基板の他方の主面側に配置され、前記入力電極に電気的に接続される裏面接続体と、を有する表示装置であって、
前記他方の主面側に第1の絶縁層が配置され、前記第1の絶縁層の上面が前記裏面接続体の上面よりも高い位置に配されており、
前記一方の主面側であって、前記画素構成体と前記ガラス基板との間に画素構成体配置材が設けられ、前記入力電極を含む表面接続体が設けられ、
前記画素構成体配置材の上面の前記一方の主面からの高さが、前記表面接続体の上面よりも高いとともに前記第1の絶縁層の上面の前記他方の主面からの高さよりも低い位置に配されており、
前記裏面接続体および前記表面接続体が第2の絶縁層に覆われ、
前記他方の主面側における第2絶縁層の上面が前記第1の絶縁層の上面よりも低い位置となり、
前記一方の主面側における第2絶縁層の上面が前記画素構成体配置材の上面よりも低い位置となっている表示装置。
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KR (1) | KR102287529B1 (ja) |
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WO2021225341A1 (ko) * | 2020-05-08 | 2021-11-11 | 삼성전자주식회사 | 측면 배선이 형성된 글라스 기판을 구비한 디스플레이 모듈 및 그 제조 방법 |
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