WO2020250667A1 - 発光素子基板および表示装置 - Google Patents

発光素子基板および表示装置 Download PDF

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Publication number
WO2020250667A1
WO2020250667A1 PCT/JP2020/020761 JP2020020761W WO2020250667A1 WO 2020250667 A1 WO2020250667 A1 WO 2020250667A1 JP 2020020761 W JP2020020761 W JP 2020020761W WO 2020250667 A1 WO2020250667 A1 WO 2020250667A1
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Prior art keywords
light emitting
emitting element
light
substrate
insulating layer
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PCT/JP2020/020761
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English (en)
French (fr)
Inventor
崇司 清水
弘晃 伊藤
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京セラ株式会社
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Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Priority to CN202080041041.9A priority Critical patent/CN113906490A/zh
Priority to JP2021525975A priority patent/JP7311595B2/ja
Priority to US17/617,184 priority patent/US20220246594A1/en
Publication of WO2020250667A1 publication Critical patent/WO2020250667A1/ja

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    • H—ELECTRICITY
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    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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Definitions

  • the present disclosure relates to a light emitting element substrate on which a light emitting element such as a light emitting diode (LED) is mounted and a display device using the light emitting element substrate.
  • a light emitting element such as a light emitting diode (LED)
  • the light emitting device substrate of the present disclosure includes a substrate, a first insulating layer located on the substrate, a second insulating layer located on the first insulating layer, and an opening formed in the second insulating layer.
  • a light emitting element substrate including a mounting portion of a light emitting element in a portion of the first insulating layer exposed in the opening and the light emitting element located in the mounting portion, wherein the mounting portion is the first. It is a convex body located at a portion of the insulating layer, and the upper surface of the light emitting element located at the mounting portion is located higher than the upper surface of the second insulating layer.
  • the display device of the present disclosure is a display device including a light emitting element substrate having the above configuration, and the substrate has a first surface on which the light emitting element is located, a second surface opposite to the first surface, and side surfaces.
  • the light emitting element substrate has a side surface wiring located on the side surface and a drive unit located on the side of the second surface, and the light emitting element has the side surface wiring. It is configured to be connected to the drive unit via the drive unit.
  • the light emitting element substrate of the present disclosure it is possible to prevent the lateral synchrotron radiation of the light emitting element from being absorbed by the second insulating layer and being partially reflected. As a result, it is possible to suppress the decrease in the brightness of the light emitting element and the decrease in the contrast of the displayed image. Further, when the light emitting element is pressed from above and adhered to the mounting portion while being pressed against the mounting portion, the height of the upper surface of the light emitting element is higher than the upper surface of the second insulating layer, so that the light emitting element is mounted on the mounting portion from above. It can be pressed reliably. As a result, it is possible to suppress a decrease in the adhesive force to the mounting portion of the light emitting element.
  • the display device of the present disclosure it is possible to suppress a decrease in the brightness of the light emitting element and a decrease in the contrast of the displayed image. Further, when the light emitting element is mounted on the mounting portion, the light emitting element can be reliably pressed against the mounting portion from above, and it is possible to suppress a decrease in the adhesive force to the mounting portion of the light emitting element. As a result, the mounting yield of the light emitting element on the light emitting element substrate can be improved, and the display device has a long life.
  • FIG. 5 is a circuit diagram of one light emitting element and a light emitting control unit connected to the light emitting element in the display device of FIG. It is sectional drawing in B1-B2 line of FIG.
  • FIG. 5 is a block circuit diagram showing a configuration on which the display device of the present disclosure is based.
  • FIG. 6 shows a bottom view of the display device of FIG. 5, and
  • FIG. 7 shows a cross-sectional view taken along the line A1-A2 of FIG. ..
  • the display device intersects the substrate 1 made of a glass substrate or the like, the scanning signal line 2 arranged in a predetermined direction (for example, the row direction) on the substrate 1, and the scanning signal line 2 and intersects the predetermined direction.
  • a display unit 11 composed of a plurality of light emission control signal lines 3 arranged in a direction (for example, column direction), a plurality of pixel units (Pmn) divided by a scanning signal line 2 and a light emission control signal line 3, and a display unit. It is configured to have a plurality of light emitting regions (Lmn) arranged on an insulating layer covering 11.
  • the scanning signal line 2 and the light emission control signal line 3 are connected to the back surface wiring 9 on the back surface of the substrate 1 via the side surface wiring 30 arranged on the side surface of the substrate 1.
  • the back surface wiring 9 is connected to a drive element 6 such as an IC or LSI installed on the back surface of the substrate 1. That is, the display of the display device is driven and controlled by the drive element 6 on the back surface of the substrate 1.
  • the drive element 6 is mounted on the back surface side of the substrate 1 by means such as a COG (Chip On Glass) method.
  • an FPC for inputting / outputting a drive signal, a control signal, or the like to / from the drive element 6 via a lead wire may be installed.
  • a through conductor such as a through hole may be used instead of the side wiring 30.
  • Each pixel unit 15 is provided with a light emission control unit 22 for controlling light emission, non-light emission, light emission intensity, etc. of the light emitting element 14 (LDmn) in the light emitting region (Lmn).
  • the light emission control unit 22 includes a thin film (Thin Film Transistor: TFT) 12 (shown in FIG. 8) as a switch element for inputting a light emission signal to each of the light emission elements 14, and a light emission control signal (light emission control signal line 3).
  • TFT Thin Film Transistor
  • the light emitting element 14 is currented from the potential difference (light emitting signal) between the positive voltage (anode voltage: about 3 to 5V) and the negative voltage (cathode voltage: about -3V to 0V) according to the level (voltage) of the signal to be transmitted.
  • a TFT 13 shown in FIG. 8 as a driving element for driving.
  • a capacitive element is arranged on the connection line connecting the gate electrode of the TFT 13 and the source electrode, and the capacitive element changes the voltage of the light emission control signal input to the gate electrode of the TFT 13 until the next rewriting (1 frame). Function as a holding capacity to hold.
  • the light emitting element 14 has a light emitting control unit 22, a positive voltage input line 16, and a negative voltage input line via through conductors 23a and 23b such as through holes that penetrate the insulating layer 41 (shown in FIG. 7) that covers the display unit 11. It is electrically connected to 17. That is, the positive electrode of the light emitting element 14 is connected to the positive voltage input line 16 via the through conductor 23a and the light emission control unit 22, and the negative electrode of the light emitting element 14 is connected to the negative voltage input line via the through conductor 23b. It is connected to 17.
  • the display device in a plan view, there is a frame portion 1g that does not contribute to the display between the display unit 11 and the end 1t (described in FIG. 5) of the substrate 1, and the light emission control signal line drive circuit is provided in the frame portion 1g.
  • a scanning signal line drive circuit or the like may be arranged. It is requested that the width of the frame portion 1 g be as small as possible.
  • one mother substrate is cut to cut out a plurality of substrates 1, but in order to suppress the influence of the cutting line on the light emission control unit 22, as shown in the block circuit diagram of FIG. It is known that the light emitting control unit 22 is arranged inside the substrate 1 in a plan view from the light emitting element 14 in the pixel unit 15 on the outermost peripheral portion.
  • FIG. 8 is a partially enlarged plan view showing an enlarged pixel portion 15 (P11) on the outermost peripheral portion of the display device of FIG. 5, and FIG. 9 is a cross-sectional view taken along line B1-B2 of FIG.
  • a light-shielding portion 25 made of a black matrix or the like is arranged on the frame portion 1g. ..
  • a resin insulating layer 51 made of acrylic resin or the like is arranged on a substrate 1 made of a glass substrate or the like, and a light emitting element 14 is mounted on the resin insulating layer 51.
  • the light emitting element 14 is electrically connected to the positive electrode 54a and the negative electrode 54b arranged on the resin insulating layer 51 via conductive connecting members such as ACF (Anisotropic Conductive Film) and solder, and the resin insulating layer 51.
  • conductive connecting members such as ACF (Anisotropic Conductive Film) and solder
  • the positive electrode 54a is an electrode layer 52a composed of a Mo layer / Al layer / Mo layer (indicating a laminated structure in which an Al layer and a Mo layer are sequentially laminated on the Mo layer), and indium tin oxide (Indium Tin) covering the electrode layer 52a. It is composed of a transparent electrode 53a made of Oxide: ITO) and the like.
  • the negative electrode 54b has the same configuration, and is composed of an electrode layer 52b made of Mo layer / Al layer / Mo layer and the like, and a transparent electrode 53b made of ITO or the like covering the electrode layer 52b. Further, the electrode pad 2p is arranged at a portion closer to the end 1t of the substrate 1 than the positive electrode 54a and the negative electrode 54b on the resin insulating layer 51, and the electrode pad 2p is formed from the electrode layer 52c and ITO or the like covering the electrode layer 52c. It is composed of a transparent electrode 53c.
  • the electrode pad 2p functions as a relay electrode that is electrically connected to the positive electrode 54a or the negative electrode 54b and is electrically connected to the back surface wiring 9 via the side surface wiring 30.
  • Silicon oxide (SiO 2 ) and silicon nitride (SiN) cover the resin insulating layer 51, a part of each of the transparent electrodes 53a and 53b (the portion where the light emitting element 14 does not overlap), and the peripheral edge of the transparent electrode 53c.
  • An insulating layer 55 made of X ) or the like is arranged.
  • a light-shielding layer 56 made of a black matrix or the like is arranged on the heat insulating layer 55 except for the mounting portion of the light emitting element 14 and the arrangement portion of the light-shielding member 25.
  • the light-shielding layer 56 is provided for the purpose of allowing a portion other than the portion of the light emitting element 14 to have a dark background color such as black when the display device is viewed in a plan view.
  • a side wiring 30 that electrically connects the electrode pad 2p and the back surface wiring 9 is arranged from a portion of the insulating layer 55 that covers the electrode pad 2p in a plan view to the back surface of the substrate 1 via the side surface of the substrate 1.
  • the side wiring 30 is formed by applying and firing a conductive paste containing conductive particles such as silver.
  • the light-shielding member 25 is arranged so as to cover the electrode pad 2p and the side wiring 30.
  • the positive electrode of the light emitting element 14 is connected to the positive electrode 54a via a conductive connecting member such as ACF or solder, and the negative electrode of the light emitting element 14 is connected to the negative electrode 54b via the conductive connecting member such as ACF or solder.
  • the light emitting element 14 is mounted on the substrate 1 by being connected to the substrate 1.
  • the light radiated from the light emitting unit 14L of the light emitting element 14 has a component (lateral synchrotron radiation) radiated from the side surface of the light emitting element 14, and is lateral to the display device.
  • the synchrotron radiation may be absorbed by the light-shielding layer 56 and partially reflected.
  • the lateral synchrotron radiation may be absorbed by the light-shielding member 25 and partially reflected.
  • Ri luminance of the light emitting element 14 by lateral emitted light is absorbed is easily lowered, the contrast of a displayed image by a part of the side emitted light is reflected tends to decrease.
  • a plate-shaped jig in which a large number (about 10,000 to several million) of light emitting elements 14 are housed in recesses, through holes, etc. and arranged is used, and the plate is used.
  • a so-called transfer method which is a mounting method in which the light emitting element 14 is turned over and arranged on each mounting portion on the substrate 1, is often adopted.
  • the light emitting element 14 is arranged on each mounting portion on the substrate 1, and then the plate-shaped jig or pressing plate is used. In some cases, a large number of light emitting elements 14 are pressed from above and pressed against each mounting portion to be bonded. In that case, since the height of the upper surface of the light emitting element 14 is equal to or less than that of the upper surface of the light emitting layer 56 and the light shielding member 25, it becomes difficult to press all of a large number of light emitting elements 14, and a part of light emitting light is emitted. The adhesive strength of the element 14 tends to decrease.
  • a method of assembling a light emitting diode assembly and a light emitting diode assembly in which a flip-chip type light emitting diode provided in a submount is attached to a plastic cylinder in which a lead frame is embedded and assembled on a printed wiring board is known. However, even in this known technique, no configuration for solving the above problems is disclosed.
  • the light emitting element substrate and the display device of the present disclosure may include well-known constituent members such as a circuit board, a wiring conductor, a control IC, and an LSI (not shown in the figure).
  • the same parts as those in FIGS. 5 to 9 are designated by the same reference numerals, and detailed description thereof will be omitted.
  • the light emitting element substrate LS1 of the present embodiment includes a substrate 1 made of a glass substrate or the like, a resin insulating layer 51 as a first insulating layer located on the substrate 1, and a resin insulating layer.
  • the opening 56k shown in FIGS. 2 and 3 formed in the light-shielding layer 56, and the resin insulating layer 51 exposed in the opening 56k.
  • a mounting portion 51tg of a light emitting element 14G shown in FIG.
  • the mounting portion 51tg is a convex body Tog (shown in FIG. 3) located at the portion of the resin insulating layer 51, and the light emitting element 14G mounted on the mounting portion 51tg and located at the mounting portion 51tg.
  • the upper surface is higher than the upper surface of the light-shielding layer 56. That is, the height h2 (shown in FIG. 3) of the upper surface of the light emitting element 14G from the first surface 1a on which the light emitting element 14G of the substrate 1 is mounted is the height from the first surface 1a of the upper surface of the light shielding layer 56. Higher than h1 (shown in FIG. 3).
  • the following effects are achieved. It is possible to prevent the lateral synchrotron radiation of the light emitting element 14G from being absorbed by the light shielding layer 56 and being partially reflected. As a result, it is possible to suppress a decrease in the brightness of the light emitting element 14G, and it is possible to suppress a decrease in the contrast of the displayed image. Further, when the light emitting element 14G is pressed from above and pressed against the mounting portion 51tg for adhesion, the height of the upper surface of the light emitting element 14G is higher than the upper surface of the light shielding layer 56, so that the light emitting element 14G is mounted on the mounting portion. It can be reliably pressed to 51 tg from above. As a result, it is possible to suppress a decrease in the adhesive force of the light emitting element 14G to the mounting portion 51tg.
  • the light emitting element substrate of the present disclosure has one or more mounting portions 51tg in one opening 56k, and a plurality of light emitting elements 14G, for example, a light emitting element that emits red light and green light are emitted in one mounting portion 51tg.
  • a light emitting element that emits red light and green light are emitted in one mounting portion 51tg.
  • one light emitting element 14G in each of the plurality of mounting portions 51tg, and the light emitting elements 14G may have different emission colors.
  • one opening 56k has a first mounting portion, a second mounting portion, and a third mounting portion, and a light emitting element that emits red light is mounted on the first mounting portion, and a second mounting portion is provided.
  • a light emitting element that emits green light may be mounted on the third mounting portion, and a light emitting element that emits blue light may be mounted on the third mounting portion.
  • the heights of the light emitting elements that emit red light, the light emitting elements that emit green light, and the light emitting elements that emit blue light are different, the heights of the first to third mounting portions are respectively.
  • the height of the upper surface of the light emitting element from the first surface 1a of the substrate 1 can be made uniform. As a result, the yield of mounting the light emitting element can be improved.
  • the light emitting element substrate LS1 has insulating layers 55a to 55 g sequentially laminated on the first surface 1a of the substrate 1.
  • the insulating layers 55a to 55g are made of silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), or the like.
  • the TFT 67 is arranged between the first surface 1a of the substrate 1 and the insulating layers 55a to 55c.
  • the source portion 67s of the semiconductor layer 67c of the TFT 67 is connected to the source electrode 69 via a through hole 68.
  • the drain portion 67d of the semiconductor layer 67c of the TFT 67 is connected to the drain electrode 64 via a through hole 65.
  • the drain electrode 64 is connected to the lower electrode layer 60 via a through hole 63, an interlayer wiring 62, and a through hole 61.
  • the through hole 63 is formed in the lower resin insulating layer 45 laminated on the insulating layer 55e.
  • the lower electrode layer 60 is made of the same material as the electrode layer 52ag.
  • the convex body Tog at the portion of the resin insulating layer 51 as the mounting portion 51tg of the light emitting element 14G includes a lower electrode layer 60, an electrode layer 52ag, and a transparent electrode 53ag. Further, the convex body Tog may be formed by processing the resin insulating layer 51, such as exposing and removing a part of the resin insulating layer 51. Further, the convex body Tog may be made of a resin separate from the resin insulating layer 51, or may be installed on the resin insulating layer 51 by means such as adhesion.
  • the convex body Tog includes a lower electrode layer 60, an electrode layer 52 ag, and a transparent electrode 53 ag, but the electrode layer 52 ag may be a transparent electrode layer without a transparent electrode 53 ag.
  • the substrate 1 may be a translucent substrate such as a glass substrate or a plastic substrate, or may be a non-translucent substrate such as a ceramic substrate, a non-translucent plastic substrate, or a metal substrate. Good. Furthermore, a composite substrate in which a glass substrate and a plastic substrate are laminated, a composite substrate in which a glass substrate and a ceramic substrate are laminated, a composite substrate in which a glass substrate and a metal substrate are laminated, and a plurality of other substrates of different materials are laminated. It may be a composite substrate. Further, the substrate 1 may be an electrically insulating substrate such as a glass substrate, a plastic substrate, or a ceramic substrate in that wiring can be easily formed. Further, the plan view shape of the substrate 1 may be various shapes such as a rectangular shape, a circular shape, an elliptical shape, and a trapezoidal shape.
  • the light emitting element 14G emits green light
  • the light emitting element 14R emits red light
  • the light emitting element 14B emits blue light.
  • any self-luminous element such as a microchip type light emitting diode (micro LED), a monolithic type light emitting diode, an organic EL, an inorganic EL, or a semiconductor laser element can be adopted.
  • the light emitting element 14 used in the light emitting element substrate LS1 of the present embodiment is often a micro LED element, in which case it is a self-luminous type that does not require a backlight, has high luminous efficiency, and has a long life.
  • the light emitting element 14 is the micro LED element 14.
  • the positive electrode 14Ga and the negative electrode 14Gb are arranged on the lower surface (the surface on the substrate 1 side) so as to be separated from each other in a plan view, and the positive electrode 14Ga is arranged in a plan view. It is a horizontal type in which the light emitting portion 14GL is arranged in the central portion between the negative electrode 14Gb and the negative electrode 14Gb.
  • the positive electrode 14Ga is connected to the positive electrode pad 54ag arranged on the substrate 1 via a conductive connecting member such as solder or ACF (Anisotropic Conductive Film), and the negative electrode 14Gb is arranged on the substrate 1. It is connected to 54 bg via a conductive connecting member.
  • the positive electrode 14Ra and the negative electrode 14Rb are arranged on the lower surface so as to be separated from each other in a plan view, and light is emitted to the central portion between the positive electrode 14Ra and the negative electrode 14Rb in a plan view. It is a horizontal type in which the portion 14RL is arranged.
  • the positive electrode 14Ra is connected to the positive electrode pad 54ar arranged on the substrate 1 via the conductive connecting member, and the negative electrode 14Rb is connected to the negative electrode pad 54br arranged on the substrate 1 via the conductive connecting member. Will be done.
  • the positive electrode 14Ba and the negative electrode 14Bb are arranged on the lower surface so as to be separated from each other in a plan view, and light is emitted to the central portion between the positive electrode 14Ba and the negative electrode 14Bb in a plan view. It is a horizontal type in which the portion 14BL is arranged.
  • the positive electrode 14Bb is connected to the positive electrode pad 54ab arranged on the substrate 1 via the conductive connecting member, and the negative electrode 14Bb is connected to the negative electrode pad 54bb arranged on the substrate 1 via the conductive connecting member. Will be done.
  • the horizontal type in which the positive electrode and the negative electrode are arranged on the lower surface of the micro LED has been described, but either the positive electrode or the negative electrode is arranged on the lower surface of the micro LED. It may be a vertical type in which the other electrode is arranged on the upper surface of the micro LED.
  • the micro LED element 14 may be a vertical type mounted on the first surface 1a of the substrate 1 in the vertical direction (direction perpendicular to the first surface 1a). In that case, for example, it has a structure in which a positive electrode, a light emitting layer, and a negative electrode are laminated from the side of the first surface 1a.
  • the length of one side is about 1 ⁇ m or more and about 100 ⁇ m or less, and more specifically, about 3 ⁇ m or more and about 10 ⁇ m or less. It is not limited to the size of.
  • micro LED elements 14R, 14G, and 14B having different emission colors may be arranged in one pixel portion (PRGB11) 15b.
  • the emission colors of the micro LED element 14R can be red, orange, red-orange, magenta, and purple
  • the emission colors of the micro LED element 14G can be green and yellow-green
  • the emission color of the micro LED element 14B can be blue. .. This makes it easy to manufacture a display device capable of color display using the light emitting element substrate of the present embodiment.
  • a plurality of micro LED elements 14 having the same emission color may be included.
  • the positive electrodes 14Ra (14Ga, 14Ba) and the negative electrodes 14Rb (14Gb, 14Bb) of the micro LED element 14R (14G, 14B) are, for example, tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), It is composed of a conductor layer such as aluminum (Al), chromium (Cr), silver (Ag), and copper (Cu). Further, the positive electrodes 14Ra (14Ga, 14Ba) and the negative electrodes 14Rb (14Gb, 14Bb) are Mo layer / Al layer / Mo layer (indicating a laminated structure in which Al layer and Mo layer are sequentially laminated on the Mo layer) and the like.
  • It may be composed of a metal layer composed of an Al layer, an Al layer / Ti layer, a Ti layer / Al layer / Ti layer, a Mo layer, a Mo layer / Al layer / Mo layer, and a Ti layer / Al layer /. It may be composed of a metal layer such as a Mo layer, a Mo layer / Al layer / Ti layer, a Cu layer, a Cr layer, a Ni layer, and an Ag layer.
  • the electrode layer 52ar (52ag, 52ab) of the positive electrode pad 54ar (54ag, 54ab) and the electrode layer 52br (52bb, 52bb) of the negative electrode pad 54br (54bb, 54bb) are formed by the positive electrode 14Ra (14Ga, 14Ba) It may have the same configuration as the negative electrode 14Rb (14Gb, 14Bb).
  • the transparent electrodes 53ar (53ag, 53ab) on the electrode layer 52ar (52ag, 52ab) and the transparent electrodes 53br (53bb, 53bb) on the electrode layer 52br (52bg, 52bb) are indium tin oxide (ITO) and indium zinc oxide.
  • Transparent conductivity made of a conductive material such as a substance (IZO), indium tin oxide (ITSO) to which silicon oxide is added, zinc oxide (ZnO), silicon (Si) containing phosphorus and boron, and having transparency. Consists of layers.
  • the entire side surface of the micro LED element 14G mounted on the mounting portion 51tg is preferably located at a position higher than the upper surface of the light shielding layer 56.
  • the top surface of the convex body Tog is a mounting surface on which the micro LED element 14G is mounted, and the mounting surface is preferably located higher than the upper surface of the light-shielding layer 56.
  • the lateral synchrotron radiation of the micro LED element 14G can be further suppressed from being absorbed by the light-shielding layer 56 and partially reflected.
  • the micro LED element 14G when the micro LED element 14G is pressed from above and adhered to the mounting portion 51tg while being pressed against the mounting portion 51tg, the micro LED element 14G can be more reliably pressed against the mounting portion 51tg from above.
  • the lower end of the side surface of the micro LED element 14G is preferably located at a position higher than the upper surface of the light shielding layer 56 by about 0 ⁇ m or more and 100 ⁇ m or less. When it is lower than 0 ⁇ m, the phenomenon that the lateral synchrotron radiation of the micro LED element 14G is absorbed by the light-shielding layer 56 and a part of it is reflected is likely to occur. If it exceeds 100 ⁇ m, the thickness of the light emitting element substrate LS1 tends to be excessively thick.
  • the light shielding layer 56 is preferably dark. In this case, it is possible to further suppress that a part of the lateral synchrotron radiation of the micro LED element 14G is reflected by the light shielding layer 56. As a result, it is possible to suppress a decrease in the contrast of the displayed image.
  • the dark-colored light-shielding layer 56 is a dark-colored layer such as black, black-brown, dark brown, dark blue, or dark purple, and has a color that efficiently absorbs visible light to block light. For example, a dark-colored layer in a transparent resin layer. It is composed of a mixture of pigments, dyes, ceramic particles, metal particles, alloy particles, resin particles, and the like.
  • the light emitting element substrate LS2 of the present embodiment includes a dark-colored light-shielding member 25 that covers the side surface 1s of the substrate 1, and the upper surface of the micro LED element 14G mounted on the mounting portion 51tg is provided. It is preferably located higher than the upper end of the light-shielding member 25. In this case, the lateral synchrotron radiation of the micro LED element 14G can be absorbed by the light-shielding member 25 and can be prevented from being partially reflected.
  • the side wiring 30 tends to be the uppermost portion on the side of the end 1t of the substrate 1, so that the height of the upper surface of the side wiring 30 from the first surface 1a is mounted on the mounting portion 51tg. It may be equal to or less than the height of the upper surface of the micro LED element 14G. More preferably, the height of the upper surface of the side wiring 30 from the first surface 1a may be equal to or less than the height of the lower surface of the micro LED element 14G mounted on the mounting portion 51tg.
  • the entire side surface of the micro LED element 14G mounted on the mounting portion 51tg is located higher than the upper end of the light shielding member 25.
  • the lateral synchrotron radiation of the micro LED element 14G can be further suppressed from being absorbed by the light-shielding member 25 and partially reflected.
  • the height difference between the lower end of the side surface of the micro LED element 14G mounted on the mounting portion 51tg and the upper end of the light-shielding member 25 may be about 0 ⁇ m or more and about 100 ⁇ m.
  • the light-shielding member 25 is arranged for the purpose of making the frame portion 1g inconspicuous and for the purpose of protecting the side wiring 30 on the side surface 1s of the substrate 1. Therefore, it is preferable that the light-shielding member 25 is arranged so as to extend to the side surface 1s of the substrate 1. Further, by arranging a plurality of substrates 1 on which a plurality of micro LED elements 14 are mounted vertically and horizontally on the same surface and connecting (tiling) the side surfaces with an adhesive or the like, a composite type and a large display can be displayed. When manufacturing a device, a so-called multi-display, the presence of the light-shielding member 25 makes the tiling seams less noticeable.
  • the light-shielding member 25 is a dark-colored material such as black, black-brown, dark brown, dark blue, or deep purple, and has a color that efficiently absorbs visible light and blocks light.
  • a dark-colored pigment in a transparent resin layer. Dyes, ceramic particles, metal particles, alloy particles, resin particles, etc., a light-shielding film, or a seal-like material installed by adhesion, adhesion, etc., or plastic, etc. installed by adhesion, adhesion, etc. It is composed of a frame-shaped body made of.
  • the light-shielding member 25 can absorb most of the visible light to block light.
  • an uncured resin paste mixed with a dark-colored pigment, a dye, or the like is applied to 1 g of a frame portion on the substrate 1 by a coating method or a printing method using a mask. It is formed by applying, printing, and arranging by a roller printing method or the like, and curing by a thermosetting method, a photocuring method by irradiating ultraviolet rays, a photocuring method, or the like.
  • the width of the light-shielding member 25 is almost the same as the width of the frame portion 1 g, and the width of the light-shielding member 25 is about 20 ⁇ m to 110 ⁇ m.
  • a plurality of mounting portions 51tg, 51tr, 51tb are arranged on the substrate 1, and the plurality of mounting portions 51tg, 51tr, 51tb
  • the micro LED elements 14G, 14R, and 14B are mounted on each of them, and the micro LED elements 14G, 14R, and 14B may have different emission colors. In this case, it is possible to provide a display device capable of displaying a full-color image having a high-quality display image quality.
  • the pixel unit 15b includes a plurality of micro LED elements 14R, 14G, 14B having different emission colors, which function as a display unit.
  • a display unit For example, in the case of a color display display device, color gradation display is possible by the micro LED element 14R having a red emission color, the micro LED element 14G having a green emission color, and the micro LED element 14B having a blue emission color. It constitutes one pixel part.
  • the plurality of micro LED elements 14R, 14G, 14B included in one pixel unit 15b are arranged so as not to line up on one straight line when viewed in a plan view.
  • the size of the pixel portion 15b in the plan view can be reduced, and the shape of the pixel portion 15b in the plan view can be made into a compact square shape or the like.
  • the pixel density is improved in the display device and the like, and pixel unevenness is less likely to occur, so that high-quality image display is possible.
  • the plurality of micro LED elements 14R, 14G, 14B included in one pixel unit 15b may be arranged so as to be aligned on one straight line when viewed in a plan view.
  • the first set for constant drive including a plurality of micro LED elements 14R, 14G, 14B in one pixel unit 15b
  • the second set for redundant arrangement including a plurality of micro LED elements 14R, 14G, 14B.
  • light emission control units 22r, 22g, 22b including a switch element and a TFT as a control element for controlling light emission, non-light emission, light emission intensity, etc. of the micro LED elements 14R, 14G, 14B are arranged. You may. In that case, the light emission control units 22r, 22g, 22b may be arranged below the micro LED elements 14R, 14G, 14B via an insulating layer. In that case, the size of the pixel portion 15b in the plan view can be reduced, and the shape of the pixel portion 15b in the plan view can be made into a compact square shape or the like. As a result, the pixel density is improved in the display device and the like, and pixel unevenness is less likely to occur, so that high-quality image display is possible.
  • the display device of the present embodiment is a display device including the light emitting element substrates LS1 and LS2 of the present embodiment having the above configuration, and the substrate 1 is a first surface 1a (FIG. 5) on which the micro LED element 14 is mounted. ), A second surface 1b (shown in FIG. 6) opposite to the first surface 1a, and a side surface 1s (shown in FIGS. 5 and 6), and the light emitting element substrates LS1 and LS2 have.
  • the micro LED element 14 has a side wiring 30 (shown in FIGS. 5 and 6) located on the side surface 1s and a drive unit 6 located on the side of the second surface 1b. It is configured to be connected to the drive unit 6 via the drive unit 6.
  • the drive unit 6 may have a configuration in which drive elements such as ICs and LSIs are mounted by a chip-on-glass (COG) method or a chip-on-film (COF) method, but the drive element is mounted. It may be a circuit board. Further, the drive unit 6 is a TFT or the like having a semiconductor layer made of LTPS (Low Temperature Poly Silicon) directly formed on the second surface 1b of the substrate 1 made of a glass substrate by a thin film forming method such as a CVD method. It may be a thin film circuit provided with.
  • COG chip-on-glass
  • COF chip-on-film
  • the side wiring 30 is formed by heating a conductive paste containing conductive particles such as silver (Ag), copper (Cu), aluminum (Al), and stainless steel, an uncured resin component, an alcohol solvent, and water, and ultraviolet rays. It can be formed by a method such as a photocuring method or a heating photocuring method in which the material is cured by irradiation with light such as.
  • the side wiring 30 can also be formed by a thin film forming method such as a plating method, a vapor deposition method, or a CVD method. Further, there may be a groove in the portion of the side surface 1s of the substrate 1 on which the side surface wiring 30 is arranged. In that case, the conductive paste is easily arranged in the groove which is a desired portion of the side surface 1s.
  • the display device of the present embodiment can also be configured as a light emitting device.
  • the light emitting device can be used as a printer head, a lighting device, a signboard device, a bulletin board device, a signal device, or the like used in an image forming device or the like.
  • the substrate 1 may be a transparent glass substrate, but may be an opaque one.
  • the substrate 1 may be a colored glass substrate, a glass substrate made of frosted glass, a plastic substrate, a ceramic substrate, a metal substrate, or a composite substrate in which these substrates are laminated.
  • the substrate 1 is made of a metal substrate, or when the substrate 1 is a composite substrate including the metal substrate, the thermal conductivity of the substrate 1 is improved and the heat dissipation is advantageous.
  • the entire side surface of the light emitting element mounted on the mounting portion may be located at a position higher than the upper surface of the second insulating layer.
  • the second insulating layer may be a dark light-shielding layer.
  • the light emitting element substrate of the present disclosure may have a configuration in which the size of the opening gradually increases from the lower end to the upper end.
  • the light emitting element substrate of the present disclosure includes a dark-colored light-shielding member that covers the side surface of the substrate, and the upper surface of the light-emitting element located on the mounting portion may be located higher than the upper end of the light-shielding member. ..
  • the light emitting element substrate of the present disclosure has a plurality of mounting portions on the substrate, each of the plurality of mounting portions has the light emitting element, and the light emitting elements may have different emission colors.
  • the light emitting element substrate of the present disclosure may have the plurality of mounting portions in one of the openings.
  • the surface of the opening may have light reflectivity.
  • the shape of the opening in a plan view may be similar to the shape of the light emitting element.
  • the opening may have a shape in a plan view in which a plurality of curved portions bulging outward are connected.
  • the opening may have a petal-like shape in a plan view.
  • the light emitting element may have a rectangular shape in a plan view, and the opening may have a configuration in which the curved portion corresponds to a side portion of the light emitting element. ..
  • the light emitting element substrate of the present disclosure may have a structure in which the convex body has a light reflecting surface on a mounting surface on which the light emitting element is located.
  • the convex body has a light reflecting surface on a mounting surface on which the light emitting element is located.
  • the light emitting element substrate of the present disclosure may have a configuration in which the convex body has a larger size in a plan view of the mounting surface on which the light emitting element is located than the light emitting element.
  • the light emitting element substrate of the present disclosure may have a configuration in which the convex body is integrally provided with the first insulating layer.
  • the lateral synchrotron radiation of the light emitting element is second insulated. It can be more suppressed that it is absorbed by the layer and partly reflected. Further, when the light emitting element is pressed from above and adhered to the mounting portion while being pressed against the mounting portion, the light emitting element can be more reliably pressed against the mounting portion from above.
  • the second insulating layer is a dark light-shielding layer
  • the opening when the size of the opening gradually increases from the lower end to the upper end, the opening becomes a bowl-shaped reflective structure portion. As a result, even if a part of the lateral synchrotron radiation of the light emitting element is reflected on the inner surface of the opening, most of the reflected light goes upward, so that it is possible to suppress a decrease in the brightness of the light emitting element. At the same time, it is possible to suppress a decrease in the contrast of the displayed image.
  • a dark-colored light-shielding member covering the side surface of the substrate is provided, and the upper surface of the light-emitting element located on the mounting portion is higher than the upper end of the light-shielding member. It is possible to prevent the lateral synchrotron radiation of the light emitting element from being absorbed by the light-shielding member and being partially reflected.
  • the light emitting elements when there are a plurality of mounting portions on the substrate, the light emitting elements are provided in each of the plurality of mounting portions, and the light emitting elements have different emission colors.
  • a display device capable of displaying a full-color image having a high-quality display image quality can be provided.
  • the light emitting element substrate of the present disclosure when the plurality of mounting portions are provided in one of the openings, the light radiated from each of the plurality of light emitting elements is likely to be mixed, and the display image quality is higher. It is possible to display a full-color image.
  • the lateral synchrotron radiation of the light emitting element is efficiently reflected on the surface of the opening to improve the brightness. To do.
  • the lateral synchrotron radiation of the light emitting element is more efficient on the surface of the opening.
  • the brightness is further improved by being reflected.
  • the opening has a shape in which a plurality of curved portions bulging outward are connected in a plan view, for example, a petal shape in a plan view.
  • the brightness is further improved by effectively reflecting the lateral radiation of the synchrotron radiation at the curved portion.
  • the light emitting element has a rectangular shape in a plan view, and the opening is the light emitting element when the curved portion corresponds to the side portion of the light emitting element.
  • the brightness is further improved by reflecting the lateral radiation of the synchrotron radiation more effectively at the curved portion.
  • the convex body when the mounting surface on which the light emitting element is located has light reflectivity, the convex body is effective on the mounting surface with light radiated downward from the light emitting element. Brightness is improved by reflecting the light.
  • the convex body makes an electrical connection on the mounting surface of the light emitting element. Not only can it be performed reliably, but the light emitting element can be reliably installed on the mounting surface. Further, when the mounting surface has light reflectivity, the brightness is further improved by more effectively reflecting the light radiated downward from the light emitting element on the mounting surface.
  • the protrusion when the convex body is integrally provided with the first insulating layer, the protrusion can be accurately adjusted in height by a processing method such as a photolithography method. It can be well adjusted and formed.
  • the height of the upper surface of the side surface wiring from the first surface is equal to or less than the height of the upper surface of the light emitting element mounted on the mounting portion, the height of the upper surface of the light shielding member 25 is It is possible to prevent the height of the upper surface of the light emitting element 14 from being exceeded.
  • the display device of the present disclosure can be configured as a display device such as an LED display device and an organic EL display device. Further, the display device of the present disclosure can be applied to various electronic devices.
  • the electronic devices include a complex and large display device (multi-display), an automobile route guidance system (car navigation system), a ship route guidance system, an aircraft route guidance system, a smartphone terminal, a mobile phone, a tablet terminal, and a personal digital assistant.
  • PDA personal computers, copying machines, game equipment terminals, televisions, product display tags, price display tags, industrial programmable display devices,
  • ATMs automatic cash deposit / payment machines
  • HMDs head mount displays
  • Substrate 1g Frame 1s Side surface 1t Edge of substrate 2 Scanning signal line 2p Electrode pad 3 Light emission control signal line 14, 14B, 14G, 14R Light emitting element (micro LED element) 14L, 14BL, 14GL, 14RL Light emitting part 25 Light shielding member 30 Side wiring 51 Resin insulating layer (first insulating layer) End faces of 51t resin insulating layer 51tb, 51tg, 51tr Mounting part 54a Positive electrode 54b Negative electrode 56 Light-shielding layer (second insulating layer) 56k opening LS1, LS2 light emitting element substrate Tog convex body

Abstract

発光素子基板ＬＳ１は、ガラス基板等から成る基板１と、基板１上に位置する第１絶縁層としての樹脂絶縁層５１および樹脂絶縁層５１上に位置する第２絶縁層としての遮光層５６と、遮光層５６に形成された開口部５６ｋと、開口部５６ｋにおいて露出する樹脂絶縁層５１の部位にある発光素子１４Ｇの搭載部５１ｔｇと、搭載部５１ｔｇに位置する発光素子１４Ｇと、を備える。搭載部５１ｔｇは、樹脂絶縁層５１の部位にある凸状体（Ｔｏｇ）であり、搭載部５１ｔｇに搭載された発光素子１４Ｇの上面が遮光層５６の上面よりも高い位置にある。

Description

発光素子基板および表示装置
　本開示は、発光ダイオード（Light　Emitting　Diode：ＬＥＤ）等の発光素子を搭載する発光素子基板およびそれを用いた表示装置に関するものである。
　従来から、ＬＥＤ等の発光素子を複数有する、バックライト装置が不要な自発光型の発光素子基板およびそれを用いた表示装置が知られている（例えば、特許文献１，２参照）。
特開２０１９－０２８２８４号公報 特開２００５－３１７９５０号公報
　本開示の発光素子基板は、基板と、前記基板上に位置する第１絶縁層および前記第１絶縁層上に位置する第２絶縁層と、前記第２絶縁層に形成された開口部と、前記開口部において露出する前記第１絶縁層の部位にある発光素子の搭載部と、前記搭載部に位置する前記発光素子と、を備える発光素子基板であって、前記搭載部は、前記第１絶縁層の部位にある凸状体であり、前記搭載部に位置する前記発光素子の上面が前記第２絶縁層の上面よりも高い位置にある構成である。
　本開示の表示装置は、上記構成の発光素子基板を備える表示装置であって、前記基板は、前記発光素子が位置する第１面と、前記第１面と反対側の第２面と、側面とを有しており、前記発光素子基板は、前記側面に位置する側面配線と、前記第２面の側に位置する駆動部と、を有しており、前記発光素子は、前記側面配線を介して前記駆動部に接続されている構成である。
　本開示の発光素子基板によれば、発光素子の側方放射光が第２絶縁層で吸収されるとともに一部が反射されることを抑えることができる。その結果、発光素子の輝度が低下することを抑えることができるとともに、表示画像のコントラストが低下することを抑えることができる。また、発光素子を上方から押圧して搭載部に押し付けつつ接着する場合、発光素子の上面の高さが第２絶縁層の上面よりも高い位置にあることから、発光素子を搭載部に上方から確実に押圧することができる。その結果、発光素子の搭載部に対する接着力が低下することを抑えることができる。
　本開示の表示装置によれば、発光素子の輝度が低下することを抑えることができるとともに、表示画像のコントラストが低下することを抑えることができる。また、発光素子を搭載部に搭載する際に発光素子を搭載部に上方から確実に押圧することができ、発光素子の搭載部に対する接着力が低下することを抑えることができる。その結果、発光素子の発光素子基板への実装歩留まりを向上させることができ、また長寿命の表示装置となる。
　本発明の目的、特色、および利点は、下記の詳細な説明と図面とからより明確になるであろう。
本開示の発光素子基板について実施の形態の１例を示す図であり、複数の発光素子およびそれらの発光制御部の回路図である。 本開示の図１の複数の発光素子およびそれらの搭載部を示す平面図である。 図１のＣ１－Ｃ２線における断面図である。 図３の構成において遮光部材を備えた発光素子基板の断面図である。 本開示の表示装置が基礎とする構成の一例を示す図であり、表示装置の基本構成のブロック回路図である。 図５の表示装置の下面図である。 図５の表示装置のＡ１－Ａ２線における断面図である。 図５の表示装置において一つの発光素子とそれに接続された発光制御部の回路図である。 図８のＢ１－Ｂ２線における断面図である。
　以下、図面を参考にして、本発明の好適な実施形態を詳細に説明する。
　まず、図５～図９を参照して、本開示の発光素子基板およびそれを備える表示装置が基礎とする構成について説明する。
　図５は本開示の表示装置が基礎とする構成を示すブロック回路図であり、図５の表示装置の下面図を図６に示し、図５のＡ１－Ａ２線における断面図を図７に示す。表示装置は、ガラス基板等から成る基板１と、基板１上の所定の方向（例えば、行方向）に配置された走査信号線２と、走査信号線２と交差させて所定の方向と交差する方向（例えば、列方向）に配置された発光制御信号線３と、走査信号線２と発光制御信号線３によって区分けされた画素部（Ｐｍｎ）の複数から構成された表示部１１と、表示部１１を覆う絶縁層上に配置された複数の発光領域（Ｌｍｎ）と、を有する構成である。
　走査信号線２および発光制御信号線３は、基板１の側面に配置された側面配線３０を介して基板１の裏面にある裏面配線９に接続される。裏面配線９は、基板１の裏面に設置されたＩＣ，ＬＳＩ等の駆動素子６に接続される。すなわち、表示装置は基板１の裏面にある駆動素子６によって表示が駆動制御される。駆動素子６は、例えば、基板１の裏面側にＣＯＧ（Chip On Glass）方式等の手段によって搭載される。また、基板１の裏面側には、駆動素子６との間で引き出し線を介して駆動信号、制御信号等を入出力するためのＦＰＣが設置される場合がある。また側面配線３０に替えてスルーホール等の貫通導体を用いる場合がある。
　それぞれの画素部１５（Ｐｍｎ）には、発光領域（Ｌｍｎ）にある発光素子１４（ＬＤｍｎ）の発光、非発光、発光強度等を制御するための発光制御部２２が配置されている。この発光制御部２２は、発光素子１４のそれぞれに発光信号を入力するためのスイッチ素子としての薄膜トランジスタ（Thin Film Transistor：ＴＦＴ）１２（図８に示す）と、発光制御信号（発光制御信号線３を伝達する信号）のレベル（電圧）に応じた、正電圧（アノード電圧：３～５Ｖ程度）と負電圧（カソード電圧：－３Ｖ～０Ｖ程度）の電位差（発光信号）から発光素子１４を電流駆動するための駆動素子としてのＴＦＴ１３（図８に示す）と、を含む。ＴＦＴ１３のゲート電極とソース電極とを接続する接続線上には、容量素子が配置されており、容量素子はＴＦＴ１３のゲート電極に入力された発光制御信号の電圧を次の書き換えまでの期間（１フレームの期間）保持する保持容量として機能する。
　発光素子１４は、表示部１１を覆う絶縁層４１（図７に示す）を貫通するスルーホール等の貫通導体２３ａ，２３ｂを介して、発光制御部２２、正電圧入力線１６、負電圧入力線１７に電気的に接続されている。すなわち、発光素子１４の正電極は、貫通導体２３ａおよび発光制御部２２を介して正電圧入力線１６に接続されており、発光素子１４の負電極は、貫通導体２３ｂを介して負電圧入力線１７に接続されている。
　また表示装置は、平面視において、表示部１１と基板１の端１ｔ（図５に記載）との間に表示に寄与しない額縁部１ｇがあり、この額縁部１ｇに発光制御信号線駆動回路、走査信号線駆動回路等が配置される場合がある。この額縁部１ｇの幅はできるだけ小さくすることが要望されている。さらに、一枚の母基板を切断して複数枚の基板１を切り出すことが行われているが、発光制御部２２に対する切断線の影響を抑えるために、図５のブロック回路図に示すように、最外周部の画素部１５において、発光制御部２２を発光素子１４よりも平面視で基板１の内側に配置する構成が公知である。
　図８は、図５の表示装置における最外周部にある画素部１５（Ｐ１１）を拡大して示す部分拡大平面図であり、図９は、図８のＢ１－Ｂ２線における断面図である。これらの図に示すように、表示装置において、表示部１１の周囲にある表示に寄与しない額縁部１ｇを目立たなくするために、額縁部１ｇにブラックマトリクス等から成る遮光部２５を配置している。
　図９に示すように、ガラス基板等から成る基板１上にアクリル樹脂等から成る樹脂絶縁層５１が配置され、樹脂絶縁層５１上に発光素子１４が搭載されている。
　発光素子１４は、樹脂絶縁層５１上に配置された正電極５４ａと負電極５４ｂにＡＣＦ（Anisotropic　Conductive　Film）、ハンダ等の導電性接続部材を介して電気的に接続されて、樹脂絶縁層５１上に搭載される。正電極５４ａは、Ｍｏ層／Ａｌ層／Ｍｏ層（Ｍｏ層上にＡｌ層、Ｍｏ層が順次積層された積層構造を示す）等から成る電極層５２ａと、それを覆う酸化インジウム錫（Indium Tin Oxide：ＩＴＯ）等から成る透明電極５３ａと、から成る。負電極５４ｂも同様の構成であり、Ｍｏ層／Ａｌ層／Ｍｏ層等から成る電極層５２ｂと、それを覆うＩＴＯ等から成る透明電極５３ｂと、から成る。また、樹脂絶縁層５１上の正電極５４ａ及び負電極５４ｂよりも基板１の端１ｔ寄りの部位に、電極パッド２ｐが配置されており、電極パッド２ｐは電極層５２ｃとそれを覆うＩＴＯ等から成る透明電極５３ｃとから成る。電極パッド２ｐは、正電極５４ａまたは負電極５４ｂに電気的に接続されるとともに、側面配線３０を介して裏面配線９に電気的に接続される中継電極として機能する。
　樹脂絶縁層５１と、透明電極５３ａ，５３ｂのそれぞれの一部（発光素子１４が重ならない部位）と、透明電極５３ｃの周縁部と、を覆って、酸化珪素（ＳｉＯ２）、窒化珪素（ＳｉＮＸ）等から成る絶縁層５５が配置されている。絶縁層５５上において、発光素子１４の搭載部と、遮光部材２５の配置部と、を除く部位に、ブラックマトリクス等から成る遮光層５６が配置されている。遮光層５６は、表示装置を平面視したときに発光素子１４の部位以外の部位が黒色等の暗色の背景色となるようにする目的で設けられる。
　絶縁層５５上における平面視で電極パッド２ｐを覆う部位から、基板１の側面を経て基板１の裏面にかけて、電極パッド２ｐと裏面配線９を電気的に接続する側面配線３０が配置されている。側面配線３０は、例えば銀等の導電性粒子を含む導電性ペーストを塗布し焼成することによって形成される。遮光部材２５は電極パッド２ｐおよび側面配線３０を覆って配置されている。そして、発光素子１４の正電極がＡＣＦ、ハンダ等の導電性接続部材を介して正電極５４ａに接続され、発光素子１４の負電極がＡＣＦ、ハンダ等の導電性接続部材を介して負電極５４ｂに接続されることによって、発光素子１４が基板１上に搭載される。
　しかしながら、図５～図９に示す表示装置においては、発光素子１４の光放射部１４Ｌから放射される光は、発光素子１４の側面から放射される成分（側方放射光）があり、側方放射光は遮光層５６で吸収されるとともに一部が反射される場合がある。また、側方放射光は遮光部材２５で吸収されるとともに一部が反射される場合がある。それらの場合、側方放射光が吸収されることによって発光素子１４の輝度が低下しやすくなり、側方放射光の一部が反射されることによって表示画像のコントラストが低下しやすくなる。
　また、表示装置を製造する際に、多数（１万個～数１００万個程度）の発光素子１４をそれぞれ凹部、貫通孔等に収容して配列させた板状の治具を用い、その板状の治具を基板１上で裏返して発光素子１４を基板１上の各搭載部にそれぞれ配置させる搭載方法、あるいは多数の発光素子１４を粘着シート上に配列させ、その粘着シートを基板１上で裏返して発光素子１４を基板１上の各搭載部にそれぞれ配置させる搭載方法、所謂転写法を採用することが多い。それらの方法において、発光素子１４の搭載部への接着を確実なものとするために、発光素子１４を基板１上の各搭載部にそれぞれ配置させた後、上記板状の冶具または押圧板によって多数の発光素子１４を上方から押圧して各搭載部に押し付けつつ接着する場合があった。その場合、発光素子１４の上面の高さが、遮光層５６の上面および遮光部材２５と同程度以下であることから、多数の発光素子１４の全てを押圧することが難しくなり、一部の発光素子１４の接着力が低下しやすくなる。
　また、他の例として、サブマウントに設けられたフリップチップ型発光ダイオードをリードフレームが埋設されたプラスチック製筒体に取り付け、印刷配線基板上に組み立てる発光ダイオード組立体の組立方法および発光ダイオード組立体が公知である。しかしながら、この公知技術においても、上記問題点を解消する構成については何等開示されていない。
　次に、本開示の発光素子基板および表示装置の実施の形態について、図面を参照しながら説明する。但し、以下で参照する各図は、本開示の発光素子基板および表示装置の実施の形態における構成部材のうち、本開示の発光素子基板および表示装置を説明するための主要部を示している。従って、本開示に係る発光素子基板および表示装置は、図に示されていない回路基板、配線導体、制御ＩＣ，ＬＳＩ等の周知の構成部材を備えていてもよい。なお、本開示の発光素子基板および表示装置の実施の形態を示す図１～図４において、図５～図９と同じ部位には同じ符号を付しており、それらの詳細な説明は省く。
　図１～図４は、本開示の発光素子基板について実施の形態の各種例を示す図である。図１～図３に示すように、本実施の形態の発光素子基板ＬＳ１は、ガラス基板等から成る基板１と、基板１上に位置する第１絶縁層としての樹脂絶縁層５１および樹脂絶縁層５１上に位置する第２絶縁層としての遮光層５６と、遮光層５６に形成された開口部５６ｋ（図２，図３に示す）と、開口部５６ｋにおいて露出する樹脂絶縁層５１の部位にある発光素子１４Ｇ（図３に示す）の搭載部５１ｔｇと、搭載部５１ｔｇに位置する発光素子１４Ｇと、を備える。この発光素子基板ＬＳ１は、搭載部５１ｔｇは、樹脂絶縁層５１の部位にある凸状体Ｔｏｇ（図３に示す）であり、搭載部５１ｔｇに搭載されて搭載部５１ｔｇに位置する発光素子１４Ｇの上面が遮光層５６の上面よりも高い位置にある構成である。即ち、発光素子１４Ｇの上面の、基板１の発光素子１４Ｇが搭載される第１面１ａからの高さｈ２（図３に示す）が、遮光層５６の上面の第１面１ａからの高さｈ１（図３に示す）よりも高い。
　上記の構成により、以下の効果を奏する。発光素子１４Ｇの側方放射光が遮光層５６で吸収されるとともに一部が反射されることを抑えることができる。その結果、発光素子１４Ｇの輝度が低下することを抑えることができるとともに、表示画像のコントラストが低下することを抑えることができる。また、発光素子１４Ｇを上方から押圧して搭載部５１ｔｇに押し付けつつ接着する場合、発光素子１４Ｇの上面の高さが遮光層５６の上面よりも高い位置にあることから、発光素子１４Ｇを搭載部５１ｔｇに上方から確実に押圧することができる。その結果、発光素子１４Ｇの搭載部５１ｔｇに対する接着力が低下することを抑えることができる。
　本開示の発光素子基板は、１つの開口部５６ｋに１つまたは複数の搭載部５１ｔｇがあり、１つの搭載部５１ｔｇに複数の発光素子１４Ｇ、例えば赤色光を発光する発光素子と緑色光を発光する発光素子と青色光を発光する発光素子、があってもよい。
　また、１つの開口部５６ｋに複数の搭載部５１ｔｇがあり、複数の搭載部５１ｔｇのそれぞれに１つの発光素子１４Ｇがあり、それらの発光素子１４Ｇはそれぞれ発光色が異なっていてもよい。例えば、１つの開口部５６ｋに第１の搭載部と第２の搭載部と第３の搭載部があり、第１の搭載部に赤色光を発光する発光素子が搭載され、第２の搭載部に緑色光を発光する発光素子が搭載され、第３の搭載部に青色光を発光する発光素子が搭載されていてもよい。この場合、赤色光を発光する発光素子と緑色光を発光する発光素子と青色光を発光する発光素子の、素子の高さがそれぞれ異なる場合、第１～第３の搭載部のそれぞれの高さを調整することによって、基板１の第１面１ａからの発光素子の上面の高さを揃えることができる。その結果、発光素子の実装の歩留まりを向上させることができる。
　発光素子基板ＬＳ１は、図３に示すように、基板１の第１面１ａ上に絶縁層５５ａ～５５ｇが順次積層されている。絶縁層５５ａ～５５ｇは、酸化珪素（ＳｉＯ２），窒化珪素（Ｓｉ３Ｎ４）等から成る。基板１の第１面１ａから絶縁層５５ａ～５５ｃまでの層間部にＴＦＴ６７が配置されている。ＴＦＴ６７の半導体層６７ｃのソース部６７ｓはソース電極６９にスルーホール６８を介して接続されている。ＴＦＴ６７の半導体層６７ｃのドレイン部６７ｄは、ドレイン電極６４にスルーホール６５を介して接続されている。ドレイン電極６４は、スルーホール６３と層間配線６２とスルーホール６１を介して下部電極層６０に接続されている。スルーホール６３は、絶縁層５５ｅ上に積層された下部樹脂絶縁層４５に形成されている。下部電極層６０は電極層５２ａｇと同様の材料から成る。
　発光素子１４Ｇの搭載部５１ｔｇとしての、樹脂絶縁層５１の部位にある凸状体Ｔｏｇは、下部電極層６０と電極層５２ａｇと透明電極５３ａｇとを備えたものである。また凸状体Ｔｏｇは、樹脂絶縁層５１の一部を露光し除去するといった、樹脂絶縁層５１の加工によって、形成されたものであってよい。また凸状体Ｔｏｇは、樹脂絶縁層５１と別体の樹脂製もの等であってよく、樹脂絶縁層５１上に接着等の手段で設置されたものであってもよい。
　なお、凸状体Ｔｏｇは、下部電極層６０と電極層５２ａｇと透明電極５３ａｇとを備えているが、電極層５２ａｇが透明電極層であって透明電極５３ａｇがない構成であってもよい。
　発光素子基板ＬＳ１において、基板１はガラス基板，プラスチック基板等の透光性基板であってもよく、あるいはセラミック基板，非透光性プラスチック基板，金属基板等の非透光性基板であってもよい。さらには、ガラス基板とプラスチック基板を積層した複合基板、ガラス基板とセラミック基板を積層した複合基板、ガラス基板と金属基板を積層した複合基板、その他上記の各種基板のうち異なる材質のものを複数積層した複合基板であってもよい。また基板１は、電気的に絶縁性の基板であるガラス基板，プラスチック基板，セラミック基板等が、配線が形成しやすい点でよい。また基板１の平面視形状は、矩形状、円形状、楕円形状、台形状等の種々の形状であってよい。
　図２に示すように、発光素子１４Ｇは緑色光を発光するものであり、発光素子１４Ｒは赤色光を発光するものであり、発光素子１４Ｂは青色光を発光するものであるが、これらを総称していう場合は発光素子１４と記載する。発光素子１４としては、マイクロチップ型の発光ダイオード（マイクロＬＥＤ）、モノリシック型の発光ダイオード、有機ＥＬ、無機ＥＬ、半導体レーザ素子等の自発光型のものであれば採用し得る。
　本実施の形態の発光素子基板ＬＳ１に用いられる発光素子１４は、マイクロＬＥＤ素子であることがよく、その場合バックライトが不要な自発光型のものであり、発光効率が高く長寿命である。以下、発光素子１４がマイクロＬＥＤ素子１４である例について説明する。
　そして、マイクロＬＥＤ素子１４Ｇは、図２に示すように、下面（基板１側の面）に正電極１４Ｇａおよび負電極１４Ｇｂが平面視で互いに離隔して配置されており、平面視で正電極１４Ｇａと負電極１４Ｇｂとの間の中央部に光放射部１４ＧＬが配置されている横型のものである。正電極１４Ｇａが基板１上に配置された正電極パッド５４ａｇにハンダ、ＡＣＦ（Anisotropic　Conductive　Film）等の導電性接続部材を介して接続され、負電極１４Ｇｂが基板１上に配置された負電極パッド５４ｂｇに導電性接続部材を介して接続される。
　同様に、マイクロＬＥＤ素子１４Ｒは、下面に正電極１４Ｒａおよび負電極１４Ｒｂが平面視で互いに離隔して配置されており、平面視で正電極１４Ｒａと負電極１４Ｒｂとの間の中央部に光放射部１４ＲＬが配置されている横型のものである。正電極１４Ｒａが基板１上に配置された正電極パッド５４ａｒに導電性接続部材を介して接続され、負電極１４Ｒｂが基板１上に配置された負電極パッド５４ｂｒに導電性接続部材を介して接続される。
　同様に、マイクロＬＥＤ素子１４Ｂは、下面に正電極１４Ｂａおよび負電極１４Ｂｂが平面視で互いに離隔して配置されており、平面視で正電極１４Ｂａと負電極１４Ｂｂとの間の中央部に光放射部１４ＢＬが配置されている横型のものである。正電極１４Ｂａが基板１上に配置された正電極パッド５４ａｂに導電性接続部材を介して接続され、負電極１４Ｂｂが基板１上に配置された負電極パッド５４ｂｂに導電性接続部材を介して接続される。
　なお、上述の実施の形態では、マイクロＬＥＤの下面に正電極および負電極が配置されている横型で説明したが、マイクロＬＥＤの下面に正電極、負電極のどちらか一方の電極を配置し、マイクロＬＥＤの上面に他方の電極を配置する縦型のものであっても良い。
　また、マイクロＬＥＤ素子１４、基板１の第１面１ａの上に縦方向（第１面１ａに垂直な方向）に搭載された縦型のものであってもよい。その場合、例えば第１面１ａの側から正電極、発光層、負電極が積層された構造を有している。
　マイクロＬＥＤ素子１４のサイズは、平面視形状が矩形状のものである場合、一辺の長さが１μｍ程度以上１００μｍ程度以下であり、より具体的には３μｍ程度以上１０μｍ程度以下であるが、これらのサイズに限るものではない。
　図１、図２に示すように、１つの画素部（ＰＲＧＢ１１）１５ｂに、発光色が異なるマイクロＬＥＤ素子１４Ｒ，１４Ｇ，１４Ｂが配置されていてもよい。例えばマイクロＬＥＤ素子１４Ｒの発光色を赤色，橙色，赤橙色，赤紫色，紫色とし、マイクロＬＥＤ素子１４Ｇの発光色を緑色，黄緑色とし、マイクロＬＥＤ素子１４Ｂの発光色を青色とすることができる。これにより、本実施の形態の発光素子基板を用いてカラー表示が可能な表示装置を作製することが容易になる。また、１つの画素部１５ｂにマイクロＬＥＤ素子１４が３つ以上ある場合、発光色が同じものを複数含んでいてもよい。
　マイクロＬＥＤ素子１４Ｒ（１４Ｇ，１４Ｂ）の正電極１４Ｒａ（１４Ｇａ，１４Ｂａ）および負電極１４Ｒｂ（１４Ｇｂ，１４Ｂｂ）は、例えばタンタル（Ｔａ），タングステン（Ｗ），チタン（Ｔｉ），モリブデン（Ｍｏ），アルミニウム（Ａｌ），クロム（Ｃｒ），銀（Ａｇ），銅（Ｃｕ）等の導体層から成る。また、正電極１４Ｒａ（１４Ｇａ，１４Ｂａ）および負電極１４Ｒｂ（１４Ｇｂ，１４Ｂｂ）は、Ｍｏ層／Ａｌ層／Ｍｏ層（Ｍｏ層上にＡｌ層、Ｍｏ層が順次積層された積層構造を示す）等から成る金属層から構成されていてもよく、さらにはＡｌ層，Ａｌ層／Ｔｉ層，Ｔｉ層／Ａｌ層／Ｔｉ層，Ｍｏ層，Ｍｏ層／Ａｌ層／Ｍｏ層，Ｔｉ層／Ａｌ層／Ｍｏ層，Ｍｏ層／Ａｌ層／Ｔｉ層，Ｃｕ層，Ｃｒ層，Ｎｉ層，Ａｇ層等の金属層から構成されていてもよい。
　また、正電極パッド５４ａｒ（５４ａｇ，５４ａｂ）の電極層５２ａｒ（５２ａｇ，５２ａｂ）および負電極パッド５４ｂｒ（５４ｂｇ，５４ｂｂ）の電極層５２ｂｒ（５２ｂｇ，５２ｂｂ）は、正電極１４Ｒａ（１４Ｇａ，１４Ｂａ）および負電極１４Ｒｂ（１４Ｇｂ，１４Ｂｂ）と同様の構成とし得る。
　電極層５２ａｒ（５２ａｇ，５２ａｂ）上の透明電極５３ａｒ（５３ａｇ，５３ａｂ）および電極層５２ｂｒ（５２ｂｇ，５２ｂｂ）上の透明電極５３ｂｒ（５３ｂｇ，５３ｂｂ）は、インジウム錫酸化物（ＩＴＯ）、インイジウム亜鉛酸化物（ＩＺＯ）、酸化珪素を添加したインジウム錫酸化物（ＩＴＳＯ）、酸化亜鉛（ＺｎＯ）、リン，ボロンを含むシリコン（Ｓｉ）等の導電性材料であって透明性を有する材料から成る透明導電層から成る。
　本実施の形態の発光素子基板ＬＳ１は、図３に示すように、搭載部５１ｔｇに搭載されたマイクロＬＥＤ素子１４Ｇの側面の全体が、遮光層５６の上面よりも高い位置にあることがよい。換言すると、凸状体Ｔｏｇは、その頂面がマイクロＬＥＤ素子１４Ｇを搭載する搭載面であり、搭載面は、遮光層５６の上面よりも高い位置にあることがよい。この場合、マイクロＬＥＤ素子１４Ｇの側方放射光が遮光層５６で吸収されるとともに一部が反射されることをより抑えることができる。
　また、マイクロＬＥＤ素子１４Ｇを上方から押圧して搭載部５１ｔｇに押し付けつつ接着する場合、マイクロＬＥＤ素子１４Ｇを搭載部５１ｔｇに上方からより確実に押圧することができる。この場合、マイクロＬＥＤ素子１４Ｇの側面の下端が、遮光層５６の上面よりも０μｍ以上１００μｍ以下程度高い位置にあることがよい。０μｍよりも低い場合、マイクロＬＥＤ素子１４Ｇの側方放射光が遮光層５６で吸収されるとともに一部が反射される現象が生じやすくなる。１００μｍを超えると、発光素子基板ＬＳ１の厚みが余計に厚くなりやすくなる。
　また本実施の形態の発光素子基板ＬＳ１は、遮光層５６は、暗色のものであることがよい。この場合、マイクロＬＥＤ素子１４Ｇの側方放射光の一部が遮光層５６で反射されることをより抑えることができる。その結果、表示画像のコントラストが低下することを抑えることができる。暗色の遮光層５６は、黒色、黒褐色、濃褐色、濃青色、濃紫色等の暗色系のもので可視光を効率良く吸収し遮光する色合いのものであり、例えば透明な樹脂層中に暗色系の顔料、染料、セラミック粒子、金属粒子、合金粒子、樹脂粒子等を混入させて構成されたものである。
　また図４に示すように、本実施の形態の発光素子基板ＬＳ２は、基板１の側面１ｓを覆う暗色の遮光部材２５を備えており、搭載部５１ｔｇに搭載されたマイクロＬＥＤ素子１４Ｇの上面が遮光部材２５の上端よりも高い位置にあることがよい。この場合、マイクロＬＥＤ素子１４Ｇの側方放射光が遮光部材２５で吸収されるとともに一部が反射されることを抑えることができる。
　また、遮光部材２５がない場合、側面配線３０が基板１の端１ｔの側で最上部となりやすいことから、側面配線３０の上面の第１面１ａからの高さが、搭載部５１ｔｇに搭載されたマイクロＬＥＤ素子１４Ｇの上面の高さ以下であってよい。より好適には、側面配線３０の上面の第１面１ａからの高さが、搭載部５１ｔｇに搭載されたマイクロＬＥＤ素子１４Ｇの下面の高さ以下であってよい。
　また、搭載部５１ｔｇに搭載されたマイクロＬＥＤ素子１４Ｇの側面全体が遮光部材２５の上端よりも高い位置にあることがよりよい。この場合、マイクロＬＥＤ素子１４Ｇの側方放射光が遮光部材２５で吸収されるとともに一部が反射されることをより抑えることができる。またこの場合、搭載部５１ｔｇに搭載されたマイクロＬＥＤ素子１４Ｇの側面の下端と遮光部材２５の上端との高さの差は、０μｍ以上１００μｍ程度であればよい。
　遮光部材２５は、額縁部１ｇが目立たないようにする目的、また基板１の側面１ｓにある側面配線３０を保護する目的で配置される。従って、遮光部材２５は基板１の側面１ｓに延出させて配置することが好ましい。また、複数のマイクロＬＥＤ素子１４を搭載した基板１の複数を、同じ面上において縦横に配置するとともにそれらの側面同士を接着材等によって結合（タイリング）させることによって、複合型かつ大型の表示装置、所謂マルチディスプレイを製造する場合に、遮光部材２５が存在することによってタイリングの継ぎ目が目立ちにくくなる。
　遮光部材２５は、黒色、黒褐色、濃褐色、濃青色、濃紫色等の暗色系のもので可視光を効率良く吸収し遮光する色合いのものであり、例えば透明な樹脂層中に暗色系の顔料、染料、セラミック粒子、金属粒子、合金粒子、樹脂粒子等を混入させて構成された遮光膜、または接着、粘着等によって設置されるシール状のもの、または接着、粘着等によって設置されるプラスチック等から成る枠状体などから構成される。この遮光部材２５によって、可視光の大部分を吸収して遮光することができる。
　遮光部材２５は、上記の遮光膜である場合、暗色系の顔料、染料等を混入させた未硬化の樹脂ペーストを、基板１上の額縁部１ｇに、塗布法、マスクを用いた印刷法、ローラー印刷法等によって塗布、印刷して配置し、熱硬化法、紫外線等の照射による光硬化法、光熱硬化法等によって硬化させることにより形成される。
　遮光部材２５の幅は額縁部１ｇの幅とほぼ同じであり、遮光部材２５の幅は２０μｍ～１１０μｍ程度である。
　また本実施の形態の発光素子基板ＬＳ１，ＬＳ２は、図２に示すように、基板１上に複数の搭載部５１ｔｇ，５１ｔｒ，５１ｔｂが配置されており、複数の搭載部５１ｔｇ，５１ｔｒ，５１ｔｂのそれぞれにマイクロＬＥＤ素子１４Ｇ，１４Ｒ，１４Ｂが搭載されているとともに、それらのマイクロＬＥＤ素子１４Ｇ，１４Ｒ，１４Ｂは発光色が異なっていることがよい。この場合、高品位の表示画質を有するフルカラーの画像の表示が可能な表示装置を提供することができる。
　画素部１５ｂは、発光色の異なる複数のマイクロＬＥＤ素子１４Ｒ，１４Ｇ，１４Ｂを含んでいるが、これらは表示単位として機能する。例えば、カラー表示の表示装置の場合、発光色が赤色のマイクロＬＥＤ素子１４Ｒと発光色が緑色のマイクロＬＥＤ素子１４Ｇと発光色が青色のマイクロＬＥＤ素子１４Ｂとによって、カラーの階調表示が可能な一つの画素部を構成する。
　１つの画素部１５ｂに含まれる複数のマイクロＬＥＤ素子１４Ｒ，１４Ｇ，１４Ｂは平面視したときに１つの直線上に並ばない配置とされていることがよい。この場合、画素部１５ｂの平面視におけるサイズが小さくなり、また画素部１５ｂの平面視における形状をコンパクトな正方形状等とすることができる。その結果、表示装置等において画素密度が向上し、画素ムラも生じにくいことから、高画質な画像表示が可能となる。
　また、１つの画素部１５ｂに含まれる複数のマイクロＬＥＤ素子１４Ｒ，１４Ｇ，１４Ｂは、平面視したときに１つの直線上に並ぶ配置とされていてもよい。この場合、一つの画素部１５ｂに、複数のマイクロＬＥＤ素子１４Ｒ，１４Ｇ，１４Ｂを備える常時駆動用の第１組と、複数のマイクロＬＥＤ素子１４Ｒ，１４Ｇ，１４Ｂを備える冗長配置用の第２組と、を設けることが容易になる。
　画素部１５ｂにおいて、マイクロＬＥＤ素子１４Ｒ，１４Ｇ，１４Ｂの発光、非発光、発光強度等を制御するための、スイッチ素子、制御素子としてのＴＦＴを含む発光制御部２２ｒ，２２ｇ，２２ｂが配置されていてもよい。その場合、発光制御部２２ｒ，２２ｇ，２２ｂは、マイクロＬＥＤ素子１４Ｒ，１４Ｇ，１４Ｂの下方に絶縁層を介して配置されていてもよい。その場合、画素部１５ｂの平面視におけるサイズが小さくなり、また画素部１５ｂの平面視における形状をコンパクトな正方形状等とすることができる。その結果、表示装置等において画素密度が向上し、画素ムラも生じにくいことから、高画質な画像表示が可能となる。
　本実施の形態の表示装置は、上記構成の本実施の形態の発光素子基板ＬＳ１，ＬＳ２を備える表示装置であって、基板１は、マイクロＬＥＤ素子１４が搭載される第１面１ａ（図５に示す）と、第１面１ａと反対側の第２面１ｂ（図６に示す）と、側面１ｓ（図５、図６に示す）とを有しており、発光素子基板ＬＳ１，ＬＳ２は、側面１ｓに位置する側面配線３０（図５、図６に示す）と、第２面１ｂの側に位置する駆動部６と、を有しており、マイクロＬＥＤ素子１４は、側面配線３０を介して駆動部６に接続されている構成である。この構成により、マイクロＬＥＤ素子１４の輝度が低下することを抑えることができるとともに、表示画像のコントラストが低下することを抑えることができる。また、マイクロＬＥＤ素子１４の搭載部に対する接着力が低下することを抑えることができるので、長寿命の表示装置となる。
　駆動部６は、ＩＣ，ＬＳＩ等の駆動素子をチップオングラス（Chip on Glass：ＣＯＧ）方式、チップオンフィルム（Chip on Film：ＣＯＦ）方式で実装した構成のものでよいが、駆動素子を搭載した回路基板であってもよい。また、駆動部６は、ガラス基板から成る基板１の第２面１ｂ上に、ＣＶＤ法等の薄膜形成方法によって直接的に形成されたＬＴＰＳ（Low Temperature Poly Silicon）から成る半導体層を有するＴＦＴ等を備えた薄膜回路であってもよい。
　側面配線３０は、銀（Ａｇ），銅（Ｃｕ），アルミニウム（Ａｌ），ステンレススチール等の導電性粒子、未硬化の樹脂成分、アルコール溶媒および水等を含む導電性ペーストを、加熱法、紫外線等の光照射によって硬化させる光硬化法、加熱光硬化法等の方法によって形成され得る。また側面配線３０は、メッキ法、蒸着法、ＣＶＤ法等の薄膜形成方法によっても形成され得る。また、側面配線３０が配置される基板１の側面１ｓの部位に溝があってもよい。その場合、導電性ペーストが側面１ｓの所望の部位である溝に配置されやすくなる。
　また、本実施の形態の表示装置は発光装置としても構成し得る。発光装置は、画像形成装置等に用いられるプリンタヘッド、照明装置、看板装置、掲示装置、信号装置等として用いることができる。
　なお、本開示の表示装置は、上記実施の形態に限定されるものではなく、適宜の変更、改良を含んでいてもよい。例えば、基板１は透明なガラス基板であってもよいが、不透明なものであってもよい。基板１が不透明なものである場合、基板１は着色されたガラス基板、摺りガラスから成るガラス基板、プラスチック基板、セラミック基板、金属基板、あるいはそれらの基板を積層した複合基板であってもよい。基板１が金属基板から成る場合、あるいは基板１が金属基板を含む複合基板である場合には、基板１の熱伝導性が向上し放熱性に有利なものとなる。
　本開示は、以下の実施態様が可能である。
　本開示の発光素子基板は、前記搭載部に搭載された発光素子の側面の全体が、前記第２絶縁層の上面よりも高い位置にあってもよい。
　また本開示の発光素子基板は、前記第２絶縁層が、暗色の遮光層であってもよい。
　また本開示の発光素子基板は、前記開口部が、下端から上端に向かうに伴って開口の大きさが漸次大きくなる構成であってもよい。
　また本開示の発光素子基板は、前記基板の側面を覆う暗色の遮光部材を備えており、前記搭載部に位置する前記発光素子の上面が前記遮光部材の上端よりも高い位置にあってもよい。
　また本開示の発光素子基板は、前記基板上に複数の搭載部があり、複数の前記搭載部のそれぞれに前記発光素子があるとともに、それらの前記発光素子は発光色が異なってもよい。
　また本開示の発光素子基板は、一つの前記開口部に前記複数の搭載部があってもよい。
　また本開示の発光素子基板は、前記開口部が、表面が光反射性を有してもよい。この場合、開口部の表面にアルミニウム、銀等から成る光反射層があってよい。
　また本開示の発光素子基板は、前記開口部が、平面視における形状が前記発光素子の形状と相似状とされてもよい。
　また本開示の発光素子基板は、前記開口部が、平面視における形状が、外側に膨らむ複数の曲線部を繋げた形状とされてもよい。この場合、開口部は、平面視形状が花弁状等の形状であってよい。
　また本開示の発光素子基板は、前記発光素子が、平面視における形状が矩形状であり、前記開口部は、前記曲線部が前記発光素子の辺部に対応している構成であってもよい。
　本開示の発光素子基板は、前記凸状体が、前記発光素子が位置する搭載面が光反射性を有する構成であってもよい。この場合、搭載面の表面にアルミニウム、銀等から成る光反射層があってよい。
　本開示の発光素子基板は、前記凸状体が、前記発光素子が位置する搭載面の平面視における大きさが前記発光素子よりも大きい構成であってもよい。
　また本開示の発光素子基板は、前記凸状体が、前記第１絶縁層と一体的に設けられている構成であってもよい。
　本開示の発光素子基板によれば、前記搭載部に位置する発光素子の側面の全体が、前記第２絶縁層の上面よりも高い位置にある場合、発光素子の側方放射光が第２絶縁層で吸収されるとともに一部が反射されることをより抑えることができる。また、発光素子を上方から押圧して搭載部に押し付けつつ接着する場合、発光素子を搭載部に上方からより確実に押圧することができる。
　また本開示の発光素子基板によれば、前記第２絶縁層が、暗色の遮光層である場合、発光素子の側方放射光の一部が第２絶縁層で反射されることをより抑えることができる。その結果、表示画像のコントラストが低下することを抑えることができる。
　また本開示の発光素子基板によれば、前記開口部が、下端から上端に向かうに伴って開口の大きさが漸次大きくなっている場合、開口部が椀状の反射構造部となる。その結果、発光素子の側方放射光の一部が開口部の内面で反射されたとしても、反射光は大部分が上方に向かうことから、発光素子の輝度が低下することを抑えることができるとともに、表示画像のコントラストが低下することを抑えることができる。
　また本開示の発光素子基板によれば、前記基板の側面を覆う暗色の遮光部材を備えており、前記搭載部に位置する前記発光素子の上面が前記遮光部材の上端よりも高い位置にある場合、発光素子の側方放射光が遮光部材で吸収されるとともに一部が反射されることを抑えることができる。
　また本開示の発光素子基板によれば、前記基板上に複数の搭載部があり、複数の前記搭載部のそれぞれに前記発光素子があるとともに、それらの前記発光素子は発光色が異なっている場合、高品位の表示画質を有するフルカラーの画像の表示が可能な表示装置を提供することができる。
　本開示の発光素子基板によれば、一つの前記開口部に前記複数の搭載部がある場合、複数の発光素子のそれぞれから放射された光が混色しやすくなり、より高品位の表示画質を有するフルカラーの画像の表示が可能となる。
　また本開示の発光素子基板によれば、前記開口部は、表面が光反射性を有している場合、発光素子の側方放射光が開口部の表面で効率的に反射されて輝度が向上する。
　また本開示の発光素子基板によれば、前記開口部は、平面視における形状が前記発光素子の形状と相似状とされている場合、発光素子の側方放射光が開口部の表面でより効率的に反射されて輝度がより向上する。
　また本開示の発光素子基板によれば、前記開口部は、平面視における形状が、外側に膨らむ複数の曲線部を繋げた形状、例えば平面視で花弁状の形状とされている場合、発光素子の側方放射光を曲線部で効果的に反射させることによって、輝度がより向上する。
　また本開示の発光素子基板によれば、前記発光素子は、平面視における形状が矩形状であり、前記開口部は、前記曲線部が前記発光素子の辺部に対応している場合、発光素子の側方放射光を曲線部でより効果的に反射させることによって、輝度がさらに向上する。
　また本開示の発光素子基板によれば、前記凸状体は、前記発光素子が位置する搭載面が光反射性を有している場合、発光素子から下方に放射された光を搭載面で効果的に反射させることによって、輝度が向上する。
　また本開示の発光素子基板によれば、前記凸状体は、前記発光素子が位置する搭載面の平面視における大きさが前記発光素子よりも大きい場合、発光素子を搭載面における電気的接続を確実に行えるとともに、発光素子を搭載面に確実に設置することができる。また、搭載面が光反射性を有する場合であれば発光素子から下方に放射された光を搭載面でより効果的に反射させることによって、輝度がより向上する。
　また本開示の発光素子基板によれば、前記凸状体は、前記第１絶縁層と一体的に設けられている場合、フォトリソグラフィ法等の加工方法によって、突起体を、その高さを精度良く調整して形成することができる。
　前記表示装置において、前記側面配線の上面の前記第１面からの高さが、前記搭載部に搭載された前記発光素子の上面の高さ以下である場合、遮光部材２５の上面の高さが発光素子１４の上面の高さを超えることを抑えることができる。
　本開示の表示装置は、ＬＥＤ表示装置、有機ＥＬ表示装置等の表示装置として構成し得る。また本開示の表示装置は、各種の電子機器に適用できる。その電子機器としては、複合型かつ大型の表示装置（マルチディスプレイ）、自動車経路誘導システム（カーナビゲーションシステム）、船舶経路誘導システム、航空機経路誘導システム、スマートフォン端末、携帯電話、タブレット端末、パーソナルデジタルアシスタント（ＰＤＡ）、ビデオカメラ、デジタルスチルカメラ、電子手帳、電子書籍、電子辞書、パーソナルコンピュータ、複写機、ゲーム機器の端末装置、テレビジョン、商品表示タグ、価格表示タグ、産業用のプログラマブル表示装置、カーオーディオ、デジタルオーディオプレイヤー、ファクシミリ、プリンター、現金自動預け入れ払い機（ＡＴＭ）、自動販売機、ヘッドマウントディスプレイ（ＨＭＤ）、デジタル表示式腕時計、スマートウォッチなどがある。
　本発明は、その精神または主要な特徴から逸脱することなく、他のいろいろな形態で実施できる。したがって、前述の実施形態はあらゆる点で単なる例示に過ぎず、本発明の範囲は請求の範囲に示すものであって、明細書本文には何ら拘束されない。さらに、請求の範囲に属する変形や変更は全て本発明の範囲内のものである。
１　基板
１ｇ　額縁部
１ｓ　側面
１ｔ　基板の端
２　走査信号線
２ｐ　電極パッド
３　発光制御信号線
１４，１４Ｂ，１４Ｇ，１４Ｒ　発光素子（マイクロＬＥＤ素子）
１４Ｌ，１４ＢＬ，１４ＧＬ，１４ＲＬ　光放射部
２５　遮光部材
３０　側面配線
５１　樹脂絶縁層（第１絶縁層）
５１ｔ　樹脂絶縁層の端面
５１ｔｂ，５１ｔｇ，５１ｔｒ　搭載部
５４ａ　正電極
５４ｂ　負電極
５６　遮光層（第２絶縁層）
５６ｋ　開口部
ＬＳ１，ＬＳ２　発光素子基板
Ｔｏｇ　凸状体

Claims (16)

  1. 　基板と、
    　前記基板上に位置する第１絶縁層および前記第１絶縁層上に位置する第２絶縁層と、
    　前記第２絶縁層に形成された開口部と、
    　前記開口部において露出する前記第１絶縁層の部位にある発光素子の搭載部と、
    　前記搭載部に位置する前記発光素子と、を備える発光素子基板であって、
    　前記搭載部は、前記第１絶縁層の部位にある凸状体であり、
    　前記搭載部に位置する前記発光素子の上面が前記第２絶縁層の上面よりも高い位置にある発光素子基板。
  2. 　前記搭載部に位置する発光素子の側面の全体が、前記第２絶縁層の上面よりも高い位置にある請求項１に記載の発光素子基板。
  3. 　前記第２絶縁層は、暗色の遮光層である請求項１または請求項２に記載の発光素子基板。
  4. 　前記開口部は、下端から上端に向かうに伴って開口の大きさが漸次大きくなっている請求項１乃至請求項３のいずれか１項に記載の発光素子基板。
  5. 　前記基板の側面を覆う暗色の遮光部材を備えており、
    　前記搭載部に位置する前記発光素子の上面が前記遮光部材の上端よりも高い位置にある請求項１乃至請求項４のいずれか１項に記載の発光素子基板。
  6. 　前記基板上に複数の搭載部があり、
    　複数の前記搭載部のそれぞれに前記発光素子があるとともに、それらの前記発光素子は発光色が異なっている請求項１乃至請求項５のいずれか１項に記載の発光素子基板。
  7. 　一つの前記開口部に前記複数の搭載部がある請求項６に記載の発光素子基板。
  8. 　前記開口部は、表面が光反射性を有している請求項１乃至請求項７のいずれか１項に記載の発光素子基板。
  9. 　前記開口部は、平面視における形状が前記発光素子の形状と相似状とされている請求項１乃至請求項８のいずれか１項に記載の発光素子基板。
  10. 　前記開口部は、平面視における形状が、外側に膨らむ複数の曲線部を繋げた形状とされている請求項１乃至請求項８のいずれか１項に記載の発光素子基板。
  11. 　前記発光素子は、平面視における形状が矩形状であり、
    　前記開口部は、前記曲線部が前記発光素子の辺部に対応している請求項１０に記載の発光素子基板。
  12. 　前記凸状体は、前記発光素子が搭載される搭載面が光反射性を有している請求項１乃至請求項１１のいずれか１項に記載の発光素子基板。
  13. 　前記凸状体は、前記発光素子が位置する搭載面の平面視における大きさが前記発光素子よりも大きい請求項１乃至請求項１２のいずれか１項に記載の発光素子基板。
  14. 　前記凸状体は、前記第１絶縁層と一体的に設けられている請求項１乃至１３のいずれかに１項に記載の発光素子基板。
  15. 　請求項１乃至請求項１４のいずれか１項に記載の発光素子基板を備える表示装置であって、
    　前記基板は、前記発光素子が位置する第１面と、前記第１面と反対側の第２面と、側面とを有しており、
    　前記発光素子基板は、前記側面に位置する側面配線と、前記第２面の側に位置する駆動部と、を有しており、
    　前記発光素子は、前記側面配線を介して前記駆動部に接続されている表示装置。
  16. 　前記側面配線の上面の前記第１面からの高さが、前記搭載部に位置する前記発光素子の上面の高さ以下である請求項１５に記載の表示装置。
PCT/JP2020/020761 2019-06-11 2020-05-26 発光素子基板および表示装置 WO2020250667A1 (ja)

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