JP7449280B2 - マイクロled素子基板および表示装置 - Google Patents
マイクロled素子基板および表示装置 Download PDFInfo
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- JP7449280B2 JP7449280B2 JP2021515954A JP2021515954A JP7449280B2 JP 7449280 B2 JP7449280 B2 JP 7449280B2 JP 2021515954 A JP2021515954 A JP 2021515954A JP 2021515954 A JP2021515954 A JP 2021515954A JP 7449280 B2 JP7449280 B2 JP 7449280B2
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- 239000000758 substrate Substances 0.000 title claims description 162
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000005520 cutting process Methods 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 8
- 238000000149 argon plasma sintering Methods 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 7
- 230000008439 repair process Effects 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 227
- 238000000034 method Methods 0.000 description 20
- 239000010936 titanium Substances 0.000 description 17
- 239000010949 copper Substances 0.000 description 15
- 239000004020 conductor Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- 239000011521 glass Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 230000002950 deficient Effects 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 239000002923 metal particle Substances 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 239000000049 pigment Substances 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000003086 colorant Substances 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000002932 luster Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000975 dye Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000016 photochemical curing Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- -1 black or gray Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000005338 frosted glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
1a 配置面
1b 反対面
1s 側面
6 駆動部
14B,14G マイクロLED素子
14R マイクロLED素子(第1マイクロLED素子)
14Ra 正電極
14Rb 負電極
14RL 発光部
14Rr 第2マイクロLED素子
15a,15b 画素部
30 側面配線
40al,40bl 接続配線
40ar 正電極パッド
40br 負電極パッド
52 絶縁層(第1絶縁層)
54 他の絶縁層(第2絶縁層)
60 配線
61,61B,61G,61R 遮光層
Claims (5)
- 基板上に、前記基板の側から順に配線と絶縁層とマイクロLED素子が配置されるとともに、前記マイクロLED素子は、上方からみたときの平面視において前記配線に重なっているマイクロLED素子基板であって、
前記マイクロLED素子は、その下面に平面視で離隔している正電極および負電極を有し、前記正電極は前記基板上に配置された正電極パッドおよび第1接続配線に電気的に接続され、前記負電極は前記基板上に配置された負電極パッドおよび第2接続配線に電気的に接続されており、
前記配線は、平面視において、前記正電極および前記負電極を通るように延びており、
前記絶縁層と前記マイクロLED素子との間の部位に、前記配線に沿う断面視において、前記マイクロLED素子の直下にある前記配線の少なくとも一部を横断する遮光層が、前記正電極および前記負電極に重ならない位置にあり、
前記遮光層は、暗色系の色の樹脂層、無機絶縁層、または金属層から成り、上方からリペア処理のためのレーザ光を、前記第1接続配線および/または前記第2接続配線に照射し切断する際に前記レーザ光が前記配線に到達しないように遮光し、
前記絶縁層と前記遮光層との間に熱拡散層が介在しているマイクロLED素子基板。 - 前記遮光層は、光散乱性を有している請求項1に記載のマイクロLED素子基板。
- 前記遮光層は、光反射性を有している請求項1に記載のマイクロLED素子基板。
- 前記遮光層と前記マイクロLED素子との間に他の絶縁層が介在しており、
前記絶縁層の厚みが前記他の絶縁層の厚みよりも厚い請求項1~3のいずれか1項に記載のマイクロLED素子基板。 - 請求項1~4のいずれか1項に記載のマイクロLED素子基板を備える表示装置であって、
前記基板は、前記マイクロLED素子を含む画素部が配置される配置面と、前記配置面と反対側の反対面と、側面と、を有しており、
前記マイクロLED素子基板は、前記側面に配置された側面配線と、前記反対面の側に配置された駆動部と、を有しており、
前記画素部の複数がマトリックス状に配置されており、
前記マイクロLED素子は、前記側面配線を介して前記駆動部に接続される表示装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019081690 | 2019-04-23 | ||
JP2019081690 | 2019-04-23 | ||
PCT/JP2020/015562 WO2020217959A1 (ja) | 2019-04-23 | 2020-04-06 | マイクロled素子基板および表示装置 |
Publications (2)
Publication Number | Publication Date |
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JPWO2020217959A1 JPWO2020217959A1 (ja) | 2020-10-29 |
JP7449280B2 true JP7449280B2 (ja) | 2024-03-13 |
Family
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JP2021515954A Active JP7449280B2 (ja) | 2019-04-23 | 2020-04-06 | マイクロled素子基板および表示装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220199879A1 (ja) |
JP (1) | JP7449280B2 (ja) |
CN (1) | CN113661580A (ja) |
WO (1) | WO2020217959A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20220083127A (ko) * | 2020-12-11 | 2022-06-20 | 삼성전기주식회사 | 인쇄회로기판 및 전자부품 패키지 |
JPWO2023008243A1 (ja) * | 2021-07-30 | 2023-02-02 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001051622A (ja) | 1999-06-04 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | 電気光学装置及び電子装置 |
JP2004266235A (ja) | 2003-01-09 | 2004-09-24 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置 |
JP2005252228A (ja) | 2004-02-05 | 2005-09-15 | Sharp Corp | 表示装置及びその製造方法 |
JP2012227514A (ja) | 2011-04-08 | 2012-11-15 | Sony Corp | 画素チップ、表示パネル、照明パネル、表示装置および照明装置 |
WO2015114721A1 (ja) | 2014-01-29 | 2015-08-06 | 株式会社Joled | 画像表示装置 |
US20150241718A1 (en) | 2014-02-24 | 2015-08-27 | Samsung Display Co., Ltd. | Display substrate and method of repairing the same |
JP2016513876A (ja) | 2013-03-15 | 2016-05-16 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 表示装置 |
JP2017004838A (ja) | 2015-06-12 | 2017-01-05 | 株式会社ジャパンディスプレイ | 表示装置 |
US20170141349A1 (en) | 2015-11-16 | 2017-05-18 | Samsung Display Co., Ltd. | Display apparatus |
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JP2019046931A (ja) | 2017-08-31 | 2019-03-22 | 京セラ株式会社 | 半導体装置、発光装置および半導体装置の製造方法 |
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JPH1138444A (ja) * | 1997-07-18 | 1999-02-12 | Toshiba Corp | 液晶表示装置 |
JP6654466B2 (ja) * | 2015-08-31 | 2020-02-26 | 株式会社Joled | 半導体装置、表示装置、表示装置の製造方法および電子機器 |
JP6856472B2 (ja) * | 2017-07-31 | 2021-04-07 | 京セラ株式会社 | 表示装置 |
JPWO2020049392A1 (ja) * | 2018-09-05 | 2021-09-24 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、電子機器、及び表示装置の作製方法 |
KR102649146B1 (ko) * | 2018-10-26 | 2024-03-21 | 삼성디스플레이 주식회사 | 컬러 필터 및 이를 포함하는 디스플레이 장치 |
-
2020
- 2020-04-06 WO PCT/JP2020/015562 patent/WO2020217959A1/ja active Application Filing
- 2020-04-06 US US17/603,554 patent/US20220199879A1/en active Pending
- 2020-04-06 JP JP2021515954A patent/JP7449280B2/ja active Active
- 2020-04-06 CN CN202080027828.XA patent/CN113661580A/zh active Pending
Patent Citations (11)
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JP2001051622A (ja) | 1999-06-04 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | 電気光学装置及び電子装置 |
JP2004266235A (ja) | 2003-01-09 | 2004-09-24 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置 |
JP2005252228A (ja) | 2004-02-05 | 2005-09-15 | Sharp Corp | 表示装置及びその製造方法 |
JP2012227514A (ja) | 2011-04-08 | 2012-11-15 | Sony Corp | 画素チップ、表示パネル、照明パネル、表示装置および照明装置 |
JP2016513876A (ja) | 2013-03-15 | 2016-05-16 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 表示装置 |
WO2015114721A1 (ja) | 2014-01-29 | 2015-08-06 | 株式会社Joled | 画像表示装置 |
US20150241718A1 (en) | 2014-02-24 | 2015-08-27 | Samsung Display Co., Ltd. | Display substrate and method of repairing the same |
JP2017004838A (ja) | 2015-06-12 | 2017-01-05 | 株式会社ジャパンディスプレイ | 表示装置 |
US20170141349A1 (en) | 2015-11-16 | 2017-05-18 | Samsung Display Co., Ltd. | Display apparatus |
JP2017049568A5 (ja) | 2016-02-25 | 2018-04-26 | ||
JP2019046931A (ja) | 2017-08-31 | 2019-03-22 | 京セラ株式会社 | 半導体装置、発光装置および半導体装置の製造方法 |
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Publication number | Publication date |
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CN113661580A (zh) | 2021-11-16 |
WO2020217959A1 (ja) | 2020-10-29 |
US20220199879A1 (en) | 2022-06-23 |
JPWO2020217959A1 (ja) | 2020-10-29 |
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