JP7007795B2 - 有機膜の気相堆積 - Google Patents
有機膜の気相堆積 Download PDFInfo
- Publication number
- JP7007795B2 JP7007795B2 JP2016197037A JP2016197037A JP7007795B2 JP 7007795 B2 JP7007795 B2 JP 7007795B2 JP 2016197037 A JP2016197037 A JP 2016197037A JP 2016197037 A JP2016197037 A JP 2016197037A JP 7007795 B2 JP7007795 B2 JP 7007795B2
- Authority
- JP
- Japan
- Prior art keywords
- reactant
- substrate
- temperature
- vapor
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H10P14/6334—
-
- H10P14/6339—
-
- H10P14/6532—
-
- H10P14/683—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2505/00—Polyamides
- B05D2505/50—Polyimides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
- B05D3/141—Plasma treatment
- B05D3/145—After-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021176474A JP7299289B2 (ja) | 2015-10-09 | 2021-10-28 | 有機膜の気相堆積 |
| JP2023098005A JP7383192B2 (ja) | 2015-10-09 | 2023-06-14 | 有機膜の気相堆積 |
| JP2023188391A JP7738621B2 (ja) | 2015-10-09 | 2023-11-02 | 有機膜の気相堆積 |
| JP2025145351A JP2025183257A (ja) | 2015-10-09 | 2025-09-02 | 有機膜の気相堆積 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/879,962 | 2015-10-09 | ||
| US14/879,962 US10695794B2 (en) | 2015-10-09 | 2015-10-09 | Vapor phase deposition of organic films |
| US15/070,594 | 2016-03-15 | ||
| US15/070,594 US10343186B2 (en) | 2015-10-09 | 2016-03-15 | Vapor phase deposition of organic films |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021176474A Division JP7299289B2 (ja) | 2015-10-09 | 2021-10-28 | 有機膜の気相堆積 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017076784A JP2017076784A (ja) | 2017-04-20 |
| JP2017076784A5 JP2017076784A5 (enExample) | 2019-11-14 |
| JP7007795B2 true JP7007795B2 (ja) | 2022-01-25 |
Family
ID=58499280
Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016197037A Active JP7007795B2 (ja) | 2015-10-09 | 2016-10-05 | 有機膜の気相堆積 |
| JP2021176474A Active JP7299289B2 (ja) | 2015-10-09 | 2021-10-28 | 有機膜の気相堆積 |
| JP2023098005A Active JP7383192B2 (ja) | 2015-10-09 | 2023-06-14 | 有機膜の気相堆積 |
| JP2023188391A Active JP7738621B2 (ja) | 2015-10-09 | 2023-11-02 | 有機膜の気相堆積 |
| JP2025145351A Pending JP2025183257A (ja) | 2015-10-09 | 2025-09-02 | 有機膜の気相堆積 |
Family Applications After (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021176474A Active JP7299289B2 (ja) | 2015-10-09 | 2021-10-28 | 有機膜の気相堆積 |
| JP2023098005A Active JP7383192B2 (ja) | 2015-10-09 | 2023-06-14 | 有機膜の気相堆積 |
| JP2023188391A Active JP7738621B2 (ja) | 2015-10-09 | 2023-11-02 | 有機膜の気相堆積 |
| JP2025145351A Pending JP2025183257A (ja) | 2015-10-09 | 2025-09-02 | 有機膜の気相堆積 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10343186B2 (enExample) |
| JP (5) | JP7007795B2 (enExample) |
| KR (4) | KR102546221B1 (enExample) |
| TW (3) | TWI707978B (enExample) |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI529808B (zh) | 2010-06-10 | 2016-04-11 | Asm國際股份有限公司 | 使膜選擇性沈積於基板上的方法 |
| US9112003B2 (en) | 2011-12-09 | 2015-08-18 | Asm International N.V. | Selective formation of metallic films on metallic surfaces |
| TWI661072B (zh) | 2014-02-04 | 2019-06-01 | 荷蘭商Asm Ip控股公司 | 金屬、金屬氧化物與介電質的選擇性沈積 |
| US10047435B2 (en) | 2014-04-16 | 2018-08-14 | Asm Ip Holding B.V. | Dual selective deposition |
| US9490145B2 (en) | 2015-02-23 | 2016-11-08 | Asm Ip Holding B.V. | Removal of surface passivation |
| US10428421B2 (en) | 2015-08-03 | 2019-10-01 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
| US10121699B2 (en) | 2015-08-05 | 2018-11-06 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
| US10566185B2 (en) | 2015-08-05 | 2020-02-18 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
| US10695794B2 (en) | 2015-10-09 | 2020-06-30 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
| US10814349B2 (en) | 2015-10-09 | 2020-10-27 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
| US9981286B2 (en) | 2016-03-08 | 2018-05-29 | Asm Ip Holding B.V. | Selective formation of metal silicides |
| US10204782B2 (en) | 2016-04-18 | 2019-02-12 | Imec Vzw | Combined anneal and selective deposition process |
| US10551741B2 (en) | 2016-04-18 | 2020-02-04 | Asm Ip Holding B.V. | Method of forming a directed self-assembled layer on a substrate |
| US11081342B2 (en) | 2016-05-05 | 2021-08-03 | Asm Ip Holding B.V. | Selective deposition using hydrophobic precursors |
| US10373820B2 (en) | 2016-06-01 | 2019-08-06 | Asm Ip Holding B.V. | Deposition of organic films |
| US10453701B2 (en) | 2016-06-01 | 2019-10-22 | Asm Ip Holding B.V. | Deposition of organic films |
| US9803277B1 (en) | 2016-06-08 | 2017-10-31 | Asm Ip Holding B.V. | Reaction chamber passivation and selective deposition of metallic films |
| US10014212B2 (en) | 2016-06-08 | 2018-07-03 | Asm Ip Holding B.V. | Selective deposition of metallic films |
| US11430656B2 (en) | 2016-11-29 | 2022-08-30 | Asm Ip Holding B.V. | Deposition of oxide thin films |
| US11094535B2 (en) * | 2017-02-14 | 2021-08-17 | Asm Ip Holding B.V. | Selective passivation and selective deposition |
| US10256144B2 (en) | 2017-04-26 | 2019-04-09 | Applied Materials, Inc. | Process integration approach of selective tungsten via fill |
| US11404313B2 (en) | 2017-04-26 | 2022-08-02 | Applied Materials, Inc. | Selective tungsten deposition at low temperatures |
| US11501965B2 (en) | 2017-05-05 | 2022-11-15 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of metal oxide thin films |
| KR102684628B1 (ko) | 2017-05-16 | 2024-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 유전체 상에 옥사이드의 선택적 peald |
| US10900120B2 (en) | 2017-07-14 | 2021-01-26 | Asm Ip Holding B.V. | Passivation against vapor deposition |
| JP7077108B2 (ja) * | 2018-04-05 | 2022-05-30 | 東京エレクトロン株式会社 | 被加工物の処理方法 |
| JP7043950B2 (ja) * | 2018-04-11 | 2022-03-30 | 東京エレクトロン株式会社 | 成膜装置、及び成膜方法 |
| JP7093667B2 (ja) * | 2018-04-11 | 2022-06-30 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
| JP6981356B2 (ja) * | 2018-04-24 | 2021-12-15 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
| JP7146690B2 (ja) | 2018-05-02 | 2022-10-04 | エーエスエム アイピー ホールディング ビー.ブイ. | 堆積および除去を使用した選択的層形成 |
| JP2019207965A (ja) * | 2018-05-30 | 2019-12-05 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
| JP7061935B2 (ja) * | 2018-06-21 | 2022-05-02 | 東京エレクトロン株式会社 | 制御装置、成膜装置、制御方法、成膜方法、および制御プログラム |
| JP2020056104A (ja) | 2018-10-02 | 2020-04-09 | エーエスエム アイピー ホールディング ビー.ブイ. | 選択的パッシベーションおよび選択的堆積 |
| US12482648B2 (en) | 2018-10-02 | 2025-11-25 | Asm Ip Holding B.V. | Selective passivation and selective deposition |
| US11965238B2 (en) | 2019-04-12 | 2024-04-23 | Asm Ip Holding B.V. | Selective deposition of metal oxides on metal surfaces |
| FI129918B (en) * | 2019-05-02 | 2022-10-31 | Turun Yliopisto | A method of making a film |
| JP7236953B2 (ja) * | 2019-08-05 | 2023-03-10 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
| JP7323409B2 (ja) * | 2019-10-01 | 2023-08-08 | 東京エレクトロン株式会社 | 基板処理方法、及び、プラズマ処理装置 |
| US11139163B2 (en) | 2019-10-31 | 2021-10-05 | Asm Ip Holding B.V. | Selective deposition of SiOC thin films |
| TW202140832A (zh) | 2020-03-30 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽在金屬表面上之選擇性沉積 |
| TWI862807B (zh) | 2020-03-30 | 2024-11-21 | 荷蘭商Asm Ip私人控股有限公司 | 相對於金屬表面在介電表面上之氧化矽的選擇性沉積 |
| TWI865747B (zh) | 2020-03-30 | 2024-12-11 | 荷蘭商Asm Ip私人控股有限公司 | 在兩不同表面上同時選擇性沉積兩不同材料 |
| TWI885169B (zh) | 2020-06-24 | 2025-06-01 | 荷蘭商Asm Ip私人控股有限公司 | 自基板選擇性地移除含碳材料或有機材料之方法、選擇性有機材料移除之方法、經組態用於選擇性地移除有機材料之系統 |
| US11545354B2 (en) * | 2020-07-22 | 2023-01-03 | Applied Materials, Inc. | Molecular layer deposition method and system |
| KR20220081907A (ko) | 2020-12-09 | 2022-06-16 | 에이에스엠 아이피 홀딩 비.브이. | 억제제를 사용한 위치 선택적 기상 증착 |
| TW202403076A (zh) | 2021-09-30 | 2024-01-16 | 荷蘭商Asm Ip私人控股有限公司 | 有機材料之選擇性沉積 |
| TW202325887A (zh) | 2021-10-29 | 2023-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 使用電漿選擇性沉積含矽及氧之材料 |
| US12454752B2 (en) | 2022-01-14 | 2025-10-28 | Asm Ip Holding B.V. | Method and apparatus for forming a patterned structure on a substrate |
| CN114566437B (zh) * | 2022-01-19 | 2025-10-17 | 广东工业大学 | 一种键合丝保护层的制作方法 |
| CN118389997B (zh) * | 2024-06-26 | 2024-10-29 | 深圳市汉嵙新材料技术有限公司 | 二维聚合物薄膜材料及其制备方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009231783A (ja) | 2008-03-25 | 2009-10-08 | Tokyo Electron Ltd | 成膜装置、及び成膜方法 |
| JP2011222779A (ja) | 2010-04-09 | 2011-11-04 | Dainippon Printing Co Ltd | 薄膜素子用基板の製造方法、薄膜素子の製造方法および薄膜トランジスタの製造方法 |
| WO2013161772A1 (ja) | 2012-04-27 | 2013-10-31 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| JP2013229622A (ja) | 2013-06-25 | 2013-11-07 | Tokyo Electron Ltd | 成膜装置及びそのクリーニング方法 |
| JP2013247287A (ja) | 2012-05-28 | 2013-12-09 | Tokyo Electron Ltd | 成膜方法 |
| JP2014150144A (ja) | 2013-01-31 | 2014-08-21 | Tokyo Electron Ltd | 原料ガス供給装置、成膜装置、原料の供給方法及び記憶媒体 |
| JP2015099881A (ja) | 2013-11-20 | 2015-05-28 | 東京エレクトロン株式会社 | ガス供給装置、成膜装置、ガス供給方法及び記憶媒体 |
Family Cites Families (165)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4948755A (en) | 1987-10-08 | 1990-08-14 | Standard Microsystems Corporation | Method of manufacturing self-aligned conformal metallization of semiconductor wafer by selective metal deposition |
| US4863879A (en) | 1987-12-16 | 1989-09-05 | Ford Microelectronics, Inc. | Method of manufacturing self-aligned GaAs MESFET |
| JPH0485024A (ja) | 1990-07-30 | 1992-03-18 | Mitsubishi Gas Chem Co Inc | 銅張積層板の製造法 |
| DE4115872A1 (de) * | 1991-05-15 | 1992-11-19 | Basf Ag | Verfahren zur herstellung duenner polyimidschutzschichten auf keramischen supraleitern oder hochtemperatursupraleitern |
| US5447887A (en) | 1994-04-01 | 1995-09-05 | Motorola, Inc. | Method for capping copper in semiconductor devices |
| US6251758B1 (en) | 1994-11-14 | 2001-06-26 | Applied Materials, Inc. | Construction of a film on a semiconductor wafer |
| JP3373320B2 (ja) * | 1995-02-10 | 2003-02-04 | 株式会社アルバック | 銅配線製造方法 |
| US5633036A (en) | 1995-04-21 | 1997-05-27 | The Board Of Trustees Of The University Of Illinois | Selective low temperature chemical vapor deposition of titanium disilicide onto silicon regions |
| US5925494A (en) | 1996-02-16 | 1999-07-20 | Massachusetts Institute Of Technology | Vapor deposition of polymer films for photolithography |
| US6342277B1 (en) | 1996-08-16 | 2002-01-29 | Licensee For Microelectronics: Asm America, Inc. | Sequential chemical vapor deposition |
| US5939334A (en) | 1997-05-22 | 1999-08-17 | Sharp Laboratories Of America, Inc. | System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides |
| US5869135A (en) | 1997-10-03 | 1999-02-09 | Massachusetts Institute Of Technology | Selective chemical vapor deposition of polymers |
| US20060219157A1 (en) | 2001-06-28 | 2006-10-05 | Antti Rahtu | Oxide films containing titanium |
| US6958174B1 (en) | 1999-03-15 | 2005-10-25 | Regents Of The University Of Colorado | Solid material comprising a thin metal film on its surface and methods for producing the same |
| KR20010001072A (ko) | 1999-06-01 | 2001-01-05 | 부원영 | 네트웍을 이용한 온라인 축구 게임 및 그 방법 |
| US6046108A (en) | 1999-06-25 | 2000-04-04 | Taiwan Semiconductor Manufacturing Company | Method for selective growth of Cu3 Ge or Cu5 Si for passivation of damascene copper structures and device manufactured thereby |
| US6319635B1 (en) | 1999-12-06 | 2001-11-20 | The Regents Of The University Of California | Mitigation of substrate defects in reticles using multilayer buffer layers |
| US6503330B1 (en) | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
| FI117979B (fi) | 2000-04-14 | 2007-05-15 | Asm Int | Menetelmä oksidiohutkalvojen valmistamiseksi |
| US6759325B2 (en) | 2000-05-15 | 2004-07-06 | Asm Microchemistry Oy | Sealing porous structures |
| US6679951B2 (en) | 2000-05-15 | 2004-01-20 | Asm Intenational N.V. | Metal anneal with oxidation prevention |
| WO2001088972A1 (en) | 2000-05-15 | 2001-11-22 | Asm Microchemistry Oy | Process for producing integrated circuits |
| US7494927B2 (en) | 2000-05-15 | 2009-02-24 | Asm International N.V. | Method of growing electrical conductors |
| US6878628B2 (en) | 2000-05-15 | 2005-04-12 | Asm International Nv | In situ reduction of copper oxide prior to silicon carbide deposition |
| US7964505B2 (en) | 2005-01-19 | 2011-06-21 | Applied Materials, Inc. | Atomic layer deposition of tungsten materials |
| US7294563B2 (en) | 2000-08-10 | 2007-11-13 | Applied Materials, Inc. | Semiconductor on insulator vertical transistor fabrication and doping process |
| US7030551B2 (en) | 2000-08-10 | 2006-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Area sensor and display apparatus provided with an area sensor |
| JP4095763B2 (ja) | 2000-09-06 | 2008-06-04 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| EP1340269B1 (en) | 2000-11-30 | 2009-02-25 | Asm International N.V. | Thin films for magnetic devices |
| US6949450B2 (en) | 2000-12-06 | 2005-09-27 | Novellus Systems, Inc. | Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber |
| US7192827B2 (en) | 2001-01-05 | 2007-03-20 | Micron Technology, Inc. | Methods of forming capacitor structures |
| US6613656B2 (en) | 2001-02-13 | 2003-09-02 | Micron Technology, Inc. | Sequential pulse deposition |
| US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
| JP4921652B2 (ja) | 2001-08-03 | 2012-04-25 | エイエスエム インターナショナル エヌ.ヴェー. | イットリウム酸化物およびランタン酸化物薄膜を堆積する方法 |
| JP2003109941A (ja) | 2001-09-28 | 2003-04-11 | Canon Inc | プラズマ処理装置および表面処理方法 |
| US6809026B2 (en) | 2001-12-21 | 2004-10-26 | Applied Materials, Inc. | Selective deposition of a barrier layer on a metal film |
| US20030192090P1 (en) | 2002-04-03 | 2003-10-09 | Meilland Alain A. | Hybrid tea rose plant named 'Meibderos' |
| US6812153B2 (en) * | 2002-04-30 | 2004-11-02 | Applied Materials Inc. | Method for high aspect ratio HDP CVD gapfill |
| US6586330B1 (en) | 2002-05-07 | 2003-07-01 | Tokyo Electron Limited | Method for depositing conformal nitrified tantalum silicide films by thermal CVD |
| US7557229B2 (en) | 2002-11-15 | 2009-07-07 | President And Fellows Of Harvard College | Atomic layer deposition using metal amidinates |
| KR20040056026A (ko) | 2002-12-23 | 2004-06-30 | 주식회사 하이닉스반도체 | 구리 배선의 캐핑층 형성 방법 |
| US7115528B2 (en) | 2003-04-29 | 2006-10-03 | Micron Technology, Inc. | Systems and method for forming silicon oxide layers |
| US7914847B2 (en) | 2003-05-09 | 2011-03-29 | Asm America, Inc. | Reactor surface passivation through chemical deactivation |
| US6844258B1 (en) | 2003-05-09 | 2005-01-18 | Novellus Systems, Inc. | Selective refractory metal and nitride capping |
| JP4959333B2 (ja) | 2003-05-09 | 2012-06-20 | エーエスエム アメリカ インコーポレイテッド | 化学的不活性化を通じたリアクタ表面のパシベーション |
| US6811448B1 (en) | 2003-07-15 | 2004-11-02 | Advanced Micro Devices, Inc. | Pre-cleaning for silicidation in an SMOS process |
| US7067407B2 (en) | 2003-08-04 | 2006-06-27 | Asm International, N.V. | Method of growing electrical conductors |
| US7323411B1 (en) | 2003-09-26 | 2008-01-29 | Cypress Semiconductor Corporation | Method of selective tungsten deposition on a silicon surface |
| US7375033B2 (en) | 2003-11-14 | 2008-05-20 | Micron Technology, Inc. | Multi-layer interconnect with isolation layer |
| US7405143B2 (en) | 2004-03-25 | 2008-07-29 | Asm International N.V. | Method for fabricating a seed layer |
| US7309395B2 (en) | 2004-03-31 | 2007-12-18 | Dielectric Systems, Inc. | System for forming composite polymer dielectric film |
| TW200539321A (en) * | 2004-05-28 | 2005-12-01 | Applied Materials Inc | Method for improving high density plasmachemical vapor deposition process |
| US20060019493A1 (en) | 2004-07-15 | 2006-01-26 | Li Wei M | Methods of metallization for microelectronic devices utilizing metal oxide |
| TW200619222A (en) | 2004-09-02 | 2006-06-16 | Rohm & Haas Elect Mat | Method for making organometallic compounds |
| US8882914B2 (en) | 2004-09-17 | 2014-11-11 | Intermolecular, Inc. | Processing substrates using site-isolated processing |
| US7476618B2 (en) | 2004-10-26 | 2009-01-13 | Asm Japan K.K. | Selective formation of metal layers in an integrated circuit |
| EP1824960A2 (en) | 2004-11-22 | 2007-08-29 | Applied Materials, Inc. | Substrate processing apparatus using a batch processing chamber |
| US20060199399A1 (en) | 2005-02-22 | 2006-09-07 | Muscat Anthony J | Surface manipulation and selective deposition processes using adsorbed halogen atoms |
| US7488967B2 (en) | 2005-04-06 | 2009-02-10 | International Business Machines Corporation | Structure for confining the switching current in phase memory (PCM) cells |
| US7425350B2 (en) | 2005-04-29 | 2008-09-16 | Asm Japan K.K. | Apparatus, precursors and deposition methods for silicon-containing materials |
| US7084060B1 (en) | 2005-05-04 | 2006-08-01 | International Business Machines Corporation | Forming capping layer over metal wire structure using selective atomic layer deposition |
| US7402519B2 (en) | 2005-06-03 | 2008-07-22 | Intel Corporation | Interconnects having sealing structures to enable selective metal capping layers |
| KR100695876B1 (ko) | 2005-06-24 | 2007-03-19 | 삼성전자주식회사 | 오버레이 키 및 그 형성 방법, 오버레이 키를 이용하여형성된 반도체 장치 및 그 제조 방법. |
| US20070099422A1 (en) | 2005-10-28 | 2007-05-03 | Kapila Wijekoon | Process for electroless copper deposition |
| GB2432363B (en) | 2005-11-16 | 2010-06-23 | Epichem Ltd | Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition |
| US7595271B2 (en) | 2005-12-01 | 2009-09-29 | Asm America, Inc. | Polymer coating for vapor deposition tool |
| TW200746268A (en) | 2006-04-11 | 2007-12-16 | Applied Materials Inc | Process for forming cobalt-containing materials |
| JP5032145B2 (ja) | 2006-04-14 | 2012-09-26 | 株式会社東芝 | 半導体装置 |
| US8399056B2 (en) | 2006-06-02 | 2013-03-19 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing |
| US9245739B2 (en) | 2006-11-01 | 2016-01-26 | Lam Research Corporation | Low-K oxide deposition by hydrolysis and condensation |
| DE102007004867B4 (de) | 2007-01-31 | 2009-07-30 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Erhöhen der Zuverlässigkeit von kupferbasierten Metallisierungsstrukturen in einem Mikrostrukturbauelement durch Anwenden von Aluminiumnitrid |
| US20080241575A1 (en) | 2007-03-28 | 2008-10-02 | Lavoie Adrein R | Selective aluminum doping of copper interconnects and structures formed thereby |
| JP2010539710A (ja) | 2007-09-14 | 2010-12-16 | シグマ−アルドリッチ・カンパニー | ハフニウム系前駆体およびジルコニウム系前駆体を用いる原子層成長による薄膜の作製方法 |
| JP2009076590A (ja) | 2007-09-19 | 2009-04-09 | Hitachi Kokusai Electric Inc | クリーニング方法 |
| WO2009102363A2 (en) | 2007-11-15 | 2009-08-20 | Stc.Unm | Ultra-thin microporous/hybrid materials |
| US20090269507A1 (en) | 2008-04-29 | 2009-10-29 | Sang-Ho Yu | Selective cobalt deposition on copper surfaces |
| US7993950B2 (en) | 2008-04-30 | 2011-08-09 | Cavendish Kinetics, Ltd. | System and method of encapsulation |
| US8114301B2 (en) | 2008-05-02 | 2012-02-14 | Micron Technology, Inc. | Graphoepitaxial self-assembly of arrays of downward facing half-cylinders |
| WO2010009295A2 (en) | 2008-07-16 | 2010-01-21 | Applied Materials, Inc. | Hybrid heterojunction solar cell fabrication using a metal layer mask |
| US8425739B1 (en) | 2008-09-30 | 2013-04-23 | Stion Corporation | In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials |
| WO2010065505A2 (en) | 2008-12-01 | 2010-06-10 | E. I. Du Pont De Nemours And Company | Anode for an organic electronic device |
| US20100147396A1 (en) | 2008-12-15 | 2010-06-17 | Asm Japan K.K. | Multiple-Substrate Transfer Apparatus and Multiple-Substrate Processing Apparatus |
| US7927942B2 (en) | 2008-12-19 | 2011-04-19 | Asm International N.V. | Selective silicide process |
| US9379011B2 (en) | 2008-12-19 | 2016-06-28 | Asm International N.V. | Methods for depositing nickel films and for making nickel silicide and nickel germanide |
| US8242019B2 (en) | 2009-03-31 | 2012-08-14 | Tokyo Electron Limited | Selective deposition of metal-containing cap layers for semiconductor devices |
| US8071452B2 (en) | 2009-04-27 | 2011-12-06 | Asm America, Inc. | Atomic layer deposition of hafnium lanthanum oxides |
| JP5359642B2 (ja) | 2009-07-22 | 2013-12-04 | 東京エレクトロン株式会社 | 成膜方法 |
| JP2013501139A (ja) | 2009-07-31 | 2013-01-10 | アクゾ ノーベル ケミカルズ インターナショナル ベスローテン フエンノートシャップ | コーティングされた基材を調製するためのプロセス、コーティングされた基材、及びその使用 |
| KR101129090B1 (ko) | 2009-09-01 | 2012-04-13 | 성균관대학교산학협력단 | 패턴화된 세포 배양용 기판의 제조방법, 패턴화된 세포 배양용 기판, 세포의 패턴화된 배양 방법, 및 패턴화된 세포칩 |
| US8481355B2 (en) | 2009-12-15 | 2013-07-09 | Primestar Solar, Inc. | Modular system and process for continuous deposition of a thin film layer on a substrate |
| JP5222864B2 (ja) | 2010-02-17 | 2013-06-26 | 株式会社ジャパンディスプレイイースト | 液晶表示装置の製造方法 |
| US8293658B2 (en) | 2010-02-17 | 2012-10-23 | Asm America, Inc. | Reactive site deactivation against vapor deposition |
| JP5373669B2 (ja) | 2010-03-05 | 2013-12-18 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| TWI529808B (zh) | 2010-06-10 | 2016-04-11 | Asm國際股份有限公司 | 使膜選擇性沈積於基板上的方法 |
| US20110311726A1 (en) | 2010-06-18 | 2011-12-22 | Cambridge Nanotech Inc. | Method and apparatus for precursor delivery |
| JP5400964B2 (ja) | 2010-07-01 | 2014-01-29 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| US8357608B2 (en) | 2010-08-09 | 2013-01-22 | International Business Machines Corporation | Multi component dielectric layer |
| US9487600B2 (en) | 2010-08-17 | 2016-11-08 | Uchicago Argonne, Llc | Ordered nanoscale domains by infiltration of block copolymers |
| TW201224190A (en) | 2010-10-06 | 2012-06-16 | Applied Materials Inc | Atomic layer deposition of photoresist materials and hard mask precursors |
| JP5562434B2 (ja) | 2010-11-19 | 2014-07-30 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| US20120219824A1 (en) | 2011-02-28 | 2012-08-30 | Uchicago Argonne Llc | Atomic layer deposition of super-conducting niobium silicide |
| US8980418B2 (en) | 2011-03-24 | 2015-03-17 | Uchicago Argonne, Llc | Sequential infiltration synthesis for advanced lithography |
| JP2012209393A (ja) * | 2011-03-29 | 2012-10-25 | Tokyo Electron Ltd | クリーニング方法及び成膜方法 |
| US8871617B2 (en) | 2011-04-22 | 2014-10-28 | Asm Ip Holding B.V. | Deposition and reduction of mixed metal oxide thin films |
| DE102011051260A1 (de) | 2011-06-22 | 2012-12-27 | Aixtron Se | Verfahren und Vorrichtung zum Abscheiden von OLEDs |
| KR20130007059A (ko) | 2011-06-28 | 2013-01-18 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| EP2557132B1 (en) | 2011-08-10 | 2018-03-14 | 3M Innovative Properties Company | Multilayer adhesive film, in particular for bonding optical sensors |
| JP6202798B2 (ja) | 2011-10-12 | 2017-09-27 | エーエスエム インターナショナル エヌ.ヴェー.Asm International N.V. | 酸化アンチモン膜の原子層堆積 |
| US9112003B2 (en) | 2011-12-09 | 2015-08-18 | Asm International N.V. | Selective formation of metallic films on metallic surfaces |
| US9238865B2 (en) | 2012-02-06 | 2016-01-19 | Asm Ip Holding B.V. | Multiple vapor sources for vapor deposition |
| JP5966618B2 (ja) * | 2012-05-28 | 2016-08-10 | 東京エレクトロン株式会社 | 成膜方法 |
| US11037923B2 (en) | 2012-06-29 | 2021-06-15 | Intel Corporation | Through gate fin isolation |
| JP6040609B2 (ja) | 2012-07-20 | 2016-12-07 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
| US8890264B2 (en) | 2012-09-26 | 2014-11-18 | Intel Corporation | Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface |
| US9099490B2 (en) | 2012-09-28 | 2015-08-04 | Intel Corporation | Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation |
| JP2014093331A (ja) | 2012-10-31 | 2014-05-19 | Tokyo Electron Ltd | 重合膜の成膜方法、成膜装置の環境維持方法、成膜装置、並びに電子製品の製造方法 |
| US9330899B2 (en) | 2012-11-01 | 2016-05-03 | Asm Ip Holding B.V. | Method of depositing thin film |
| US8963135B2 (en) | 2012-11-30 | 2015-02-24 | Intel Corporation | Integrated circuits and systems and methods for producing the same |
| US8993404B2 (en) | 2013-01-23 | 2015-03-31 | Intel Corporation | Metal-insulator-metal capacitor formation techniques |
| US9566609B2 (en) | 2013-01-24 | 2017-02-14 | Corning Incorporated | Surface nanoreplication using polymer nanomasks |
| US20140227461A1 (en) | 2013-02-14 | 2014-08-14 | Dillard University | Multiple Beam Pulsed Laser Deposition Of Composite Films |
| US10573511B2 (en) | 2013-03-13 | 2020-02-25 | Asm Ip Holding B.V. | Methods for forming silicon nitride thin films |
| US9147574B2 (en) | 2013-03-14 | 2015-09-29 | Tokyo Electron Limited | Topography minimization of neutral layer overcoats in directed self-assembly applications |
| US9159558B2 (en) | 2013-03-15 | 2015-10-13 | International Business Machines Corporation | Methods of reducing defects in directed self-assembled structures |
| US20140273290A1 (en) | 2013-03-15 | 2014-09-18 | Tokyo Electron Limited | Solvent anneal processing for directed-self assembly applications |
| US9136110B2 (en) | 2013-03-15 | 2015-09-15 | Tokyo Electron Limited | Multi-step bake apparatus and method for directed self-assembly lithography control |
| JP2014188656A (ja) | 2013-03-28 | 2014-10-06 | Tokyo Electron Ltd | 中空構造体の製造方法 |
| KR102216417B1 (ko) | 2013-06-28 | 2021-02-17 | 인텔 코포레이션 | 선택적 에피택셜 성장된 iii-v족 재료 기반 디바이스 |
| US9362163B2 (en) | 2013-07-30 | 2016-06-07 | Lam Research Corporation | Methods and apparatuses for atomic layer cleaning of contacts and vias |
| JP6111171B2 (ja) | 2013-09-02 | 2017-04-05 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| WO2015047345A1 (en) | 2013-09-27 | 2015-04-02 | Intel Corporation | Forming layers of materials over small regions by selective chemical reaction including limiting encroachment of the layers over adjacent regions |
| US9385033B2 (en) | 2013-09-27 | 2016-07-05 | Intel Corporation | Method of forming a metal from a cobalt metal precursor |
| US9067958B2 (en) | 2013-10-14 | 2015-06-30 | Intel Corporation | Scalable and high yield synthesis of transition metal bis-diazabutadienes |
| US20150118863A1 (en) | 2013-10-25 | 2015-04-30 | Lam Research Corporation | Methods and apparatus for forming flowable dielectric films having low porosity |
| TW201525173A (zh) | 2013-12-09 | 2015-07-01 | 應用材料股份有限公司 | 選擇性層沉積之方法 |
| US9236292B2 (en) | 2013-12-18 | 2016-01-12 | Intel Corporation | Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD) |
| JP6325669B2 (ja) | 2013-12-19 | 2018-05-16 | インテル・コーポレーション | 半導体構造、集積回路構造、及びそれらの製造方法 |
| US9455150B2 (en) | 2013-12-24 | 2016-09-27 | Intel Corporation | Conformal thin film deposition of electropositive metal alloy films |
| TWI661072B (zh) | 2014-02-04 | 2019-06-01 | 荷蘭商Asm Ip控股公司 | 金屬、金屬氧化物與介電質的選擇性沈積 |
| TWI624515B (zh) | 2014-02-10 | 2018-05-21 | 國立清華大學 | 無機-有機複合氧化物聚合體及其製備方法 |
| JP6254459B2 (ja) | 2014-02-27 | 2017-12-27 | 東京エレクトロン株式会社 | 重合膜の耐薬品性改善方法、重合膜の成膜方法、成膜装置、および電子製品の製造方法 |
| EP2918701A1 (en) | 2014-03-14 | 2015-09-16 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Method of manufacturing a stacked organic light emitting diode, stacked OLED device, and apparatus for manufacturing thereof |
| CN106164332B (zh) | 2014-03-27 | 2019-03-19 | 英特尔公司 | 用于光辅助金属原子层沉积(ald)和化学气相沉积(cvd)的前体和工艺设计 |
| US9853107B2 (en) | 2014-03-28 | 2017-12-26 | Intel Corporation | Selective epitaxially grown III-V materials based devices |
| US10047435B2 (en) | 2014-04-16 | 2018-08-14 | Asm Ip Holding B.V. | Dual selective deposition |
| US9406523B2 (en) | 2014-06-19 | 2016-08-02 | Applied Materials, Inc. | Highly selective doped oxide removal method |
| US11021630B2 (en) | 2014-12-30 | 2021-06-01 | Rohm And Haas Electronic Materials Llc | Copolymer formulation for directed self assembly, methods of manufacture thereof and articles comprising the same |
| US9816180B2 (en) | 2015-02-03 | 2017-11-14 | Asm Ip Holding B.V. | Selective deposition |
| US9490145B2 (en) | 2015-02-23 | 2016-11-08 | Asm Ip Holding B.V. | Removal of surface passivation |
| US9777025B2 (en) | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
| US9502238B2 (en) | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
| US9646883B2 (en) | 2015-06-12 | 2017-05-09 | International Business Machines Corporation | Chemoepitaxy etch trim using a self aligned hard mask for metal line to via |
| US10428421B2 (en) | 2015-08-03 | 2019-10-01 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
| US10121699B2 (en) | 2015-08-05 | 2018-11-06 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
| US10566185B2 (en) | 2015-08-05 | 2020-02-18 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
| US10695794B2 (en) | 2015-10-09 | 2020-06-30 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
| US10204782B2 (en) | 2016-04-18 | 2019-02-12 | Imec Vzw | Combined anneal and selective deposition process |
| US20170298503A1 (en) | 2016-04-18 | 2017-10-19 | Asm Ip Holding B.V. | Combined anneal and selective deposition systems |
| US10551741B2 (en) | 2016-04-18 | 2020-02-04 | Asm Ip Holding B.V. | Method of forming a directed self-assembled layer on a substrate |
| US11081342B2 (en) | 2016-05-05 | 2021-08-03 | Asm Ip Holding B.V. | Selective deposition using hydrophobic precursors |
| US10373820B2 (en) | 2016-06-01 | 2019-08-06 | Asm Ip Holding B.V. | Deposition of organic films |
| US10453701B2 (en) | 2016-06-01 | 2019-10-22 | Asm Ip Holding B.V. | Deposition of organic films |
| US9803277B1 (en) | 2016-06-08 | 2017-10-31 | Asm Ip Holding B.V. | Reaction chamber passivation and selective deposition of metallic films |
| US11094535B2 (en) | 2017-02-14 | 2021-08-17 | Asm Ip Holding B.V. | Selective passivation and selective deposition |
| US9911595B1 (en) | 2017-03-17 | 2018-03-06 | Lam Research Corporation | Selective growth of silicon nitride |
-
2016
- 2016-03-15 US US15/070,594 patent/US10343186B2/en active Active
- 2016-10-05 JP JP2016197037A patent/JP7007795B2/ja active Active
- 2016-10-06 KR KR1020160129197A patent/KR102546221B1/ko active Active
- 2016-10-06 TW TW105132286A patent/TWI707978B/zh active
- 2016-10-06 TW TW109123189A patent/TWI827860B/zh active
- 2016-10-06 TW TW110133249A patent/TW202146695A/zh unknown
-
2021
- 2021-10-28 JP JP2021176474A patent/JP7299289B2/ja active Active
-
2023
- 2023-06-14 JP JP2023098005A patent/JP7383192B2/ja active Active
- 2023-06-16 KR KR1020230077477A patent/KR102664066B1/ko active Active
- 2023-11-02 JP JP2023188391A patent/JP7738621B2/ja active Active
-
2024
- 2024-05-02 KR KR1020240058272A patent/KR102850258B1/ko active Active
-
2025
- 2025-08-20 KR KR1020250116024A patent/KR20250133243A/ko active Pending
- 2025-09-02 JP JP2025145351A patent/JP2025183257A/ja active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009231783A (ja) | 2008-03-25 | 2009-10-08 | Tokyo Electron Ltd | 成膜装置、及び成膜方法 |
| JP2011222779A (ja) | 2010-04-09 | 2011-11-04 | Dainippon Printing Co Ltd | 薄膜素子用基板の製造方法、薄膜素子の製造方法および薄膜トランジスタの製造方法 |
| WO2013161772A1 (ja) | 2012-04-27 | 2013-10-31 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| JP2013247287A (ja) | 2012-05-28 | 2013-12-09 | Tokyo Electron Ltd | 成膜方法 |
| JP2014150144A (ja) | 2013-01-31 | 2014-08-21 | Tokyo Electron Ltd | 原料ガス供給装置、成膜装置、原料の供給方法及び記憶媒体 |
| JP2013229622A (ja) | 2013-06-25 | 2013-11-07 | Tokyo Electron Ltd | 成膜装置及びそのクリーニング方法 |
| JP2015099881A (ja) | 2013-11-20 | 2015-05-28 | 東京エレクトロン株式会社 | ガス供給装置、成膜装置、ガス供給方法及び記憶媒体 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI707978B (zh) | 2020-10-21 |
| JP7383192B2 (ja) | 2023-11-17 |
| KR102664066B1 (ko) | 2024-05-08 |
| TWI827860B (zh) | 2024-01-01 |
| KR20170044026A (ko) | 2017-04-24 |
| JP7299289B2 (ja) | 2023-06-27 |
| TW201732069A (zh) | 2017-09-16 |
| JP2025183257A (ja) | 2025-12-16 |
| US10343186B2 (en) | 2019-07-09 |
| KR20230095896A (ko) | 2023-06-29 |
| JP7738621B2 (ja) | 2025-09-12 |
| TW202041704A (zh) | 2020-11-16 |
| KR20240068605A (ko) | 2024-05-17 |
| JP2022009666A (ja) | 2022-01-14 |
| US20170100743A1 (en) | 2017-04-13 |
| KR102850258B1 (ko) | 2025-08-26 |
| KR102546221B1 (ko) | 2023-06-21 |
| JP2017076784A (ja) | 2017-04-20 |
| JP2023120310A (ja) | 2023-08-29 |
| KR20250133243A (ko) | 2025-09-05 |
| TW202146695A (zh) | 2021-12-16 |
| JP2024001340A (ja) | 2024-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7383192B2 (ja) | 有機膜の気相堆積 | |
| US12138654B2 (en) | Vapor phase deposition of organic films | |
| US11654454B2 (en) | Vapor phase deposition of organic films | |
| TWI850266B (zh) | 藉由循環cvd形成保形碳化矽膜之方法 | |
| JP5294694B2 (ja) | シリコン及びチタン窒化物のインサイチュ蒸着 | |
| US7202185B1 (en) | Silica thin films produced by rapid surface catalyzed vapor deposition (RVD) using a nucleation layer | |
| US20080050932A1 (en) | Overall defect reduction for PECVD films | |
| KR20090013111A (ko) | 시클로펜타디에닐 금속 전구체들을 이용한 상이한금속-함유막들의 인 시투 증착 방법 | |
| US9212420B2 (en) | Chemical vapor deposition method | |
| TW202301413A (zh) | 處理基材之設備 | |
| WO2005024926A1 (ja) | 基板処理装置及び半導体装置の製造方法 | |
| CN105473761B (zh) | 用于薄膜沉积的装置和方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191003 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191003 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20201126 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201215 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210315 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20210629 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211028 |
|
| C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20211028 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20211108 |
|
| C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20211109 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211124 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211130 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211214 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220107 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7007795 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |