TW202146695A - 形成有機膜的方法 - Google Patents

形成有機膜的方法 Download PDF

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Publication number
TW202146695A
TW202146695A TW110133249A TW110133249A TW202146695A TW 202146695 A TW202146695 A TW 202146695A TW 110133249 A TW110133249 A TW 110133249A TW 110133249 A TW110133249 A TW 110133249A TW 202146695 A TW202146695 A TW 202146695A
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Taiwan
Prior art keywords
reactant
temperature
substrate
vapor
deposition
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TW110133249A
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English (en)
Chinese (zh)
Inventor
維爾傑米 J. 波爾
馬可 圖敏南
哈努 霍它利
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荷蘭商Ａｓｍ Ｉｐ 控股公司
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Priority claimed from US14/879,962 external-priority patent/US10695794B2/en
Application filed by 荷蘭商Ａｓｍ Ｉｐ 控股公司 filed Critical 荷蘭商Ａｓｍ Ｉｐ 控股公司
Publication of TW202146695A publication Critical patent/TW202146695A/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2505/00—Polyamides
    • B05D2505/50—Polyimides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
    • B05D3/141—Plasma treatment
    • B05D3/145—After-treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
TW110133249A 2015-10-09 2016-10-06 形成有機膜的方法 TW202146695A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/879,962 2015-10-09
US14/879,962 US10695794B2 (en) 2015-10-09 2015-10-09 Vapor phase deposition of organic films
US15/070,594 2016-03-15
US15/070,594 US10343186B2 (en) 2015-10-09 2016-03-15 Vapor phase deposition of organic films

Publications (1)

Publication Number Publication Date
TW202146695A true TW202146695A (zh) 2021-12-16

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Family Applications (3)

Application Number Title Priority Date Filing Date
TW110133249A TW202146695A (zh) 2015-10-09 2016-10-06 形成有機膜的方法
TW105132286A TWI707978B (zh) 2015-10-09 2016-10-06 有機膜的氣相沈積
TW109123189A TWI827860B (zh) 2015-10-09 2016-10-06 減小半導體基板上的三維結構的縱橫比的方法及有機膜沈積設備

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW105132286A TWI707978B (zh) 2015-10-09 2016-10-06 有機膜的氣相沈積
TW109123189A TWI827860B (zh) 2015-10-09 2016-10-06 減小半導體基板上的三維結構的縱橫比的方法及有機膜沈積設備

Country Status (4)

Country Link
US (1) US10343186B2 (enExample)
JP (4) JP7007795B2 (enExample)
KR (4) KR102546221B1 (enExample)
TW (3) TW202146695A (enExample)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI529808B (zh) 2010-06-10 2016-04-11 Ａｓｍ國際股份有限公司 使膜選擇性沈積於基板上的方法
US9112003B2 (en) 2011-12-09 2015-08-18 Asm International N.V. Selective formation of metallic films on metallic surfaces
TWI686499B (zh) 2014-02-04 2020-03-01 荷蘭商Ａｓｍ Ｉｐ控股公司 金屬、金屬氧化物與介電質的選擇性沉積
US10047435B2 (en) 2014-04-16 2018-08-14 Asm Ip Holding B.V. Dual selective deposition
US9490145B2 (en) 2015-02-23 2016-11-08 Asm Ip Holding B.V. Removal of surface passivation
US10428421B2 (en) 2015-08-03 2019-10-01 Asm Ip Holding B.V. Selective deposition on metal or metallic surfaces relative to dielectric surfaces
US10566185B2 (en) 2015-08-05 2020-02-18 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
US10121699B2 (en) 2015-08-05 2018-11-06 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
US10695794B2 (en) 2015-10-09 2020-06-30 Asm Ip Holding B.V. Vapor phase deposition of organic films
US10814349B2 (en) 2015-10-09 2020-10-27 Asm Ip Holding B.V. Vapor phase deposition of organic films
US9981286B2 (en) 2016-03-08 2018-05-29 Asm Ip Holding B.V. Selective formation of metal silicides
US10204782B2 (en) 2016-04-18 2019-02-12 Imec Vzw Combined anneal and selective deposition process
US10551741B2 (en) 2016-04-18 2020-02-04 Asm Ip Holding B.V. Method of forming a directed self-assembled layer on a substrate
US11081342B2 (en) 2016-05-05 2021-08-03 Asm Ip Holding B.V. Selective deposition using hydrophobic precursors
US10453701B2 (en) 2016-06-01 2019-10-22 Asm Ip Holding B.V. Deposition of organic films
US10373820B2 (en) 2016-06-01 2019-08-06 Asm Ip Holding B.V. Deposition of organic films
US10014212B2 (en) 2016-06-08 2018-07-03 Asm Ip Holding B.V. Selective deposition of metallic films
US9803277B1 (en) 2016-06-08 2017-10-31 Asm Ip Holding B.V. Reaction chamber passivation and selective deposition of metallic films
US11430656B2 (en) 2016-11-29 2022-08-30 Asm Ip Holding B.V. Deposition of oxide thin films
JP7169072B2 (ja) 2017-02-14 2022-11-10 エーエスエム アイピー ホールディング ビー．ブイ． 選択的パッシベーションおよび選択的堆積
US10256144B2 (en) 2017-04-26 2019-04-09 Applied Materials, Inc. Process integration approach of selective tungsten via fill
US11404313B2 (en) 2017-04-26 2022-08-02 Applied Materials, Inc. Selective tungsten deposition at low temperatures
US11501965B2 (en) 2017-05-05 2022-11-15 Asm Ip Holding B.V. Plasma enhanced deposition processes for controlled formation of metal oxide thin films
KR102684628B1 (ko) 2017-05-16 2024-07-15 에이에스엠 아이피 홀딩 비.브이. 유전체 상에 옥사이드의 선택적 peald
US10900120B2 (en) 2017-07-14 2021-01-26 Asm Ip Holding B.V. Passivation against vapor deposition
JP7077108B2 (ja) * 2018-04-05 2022-05-30 東京エレクトロン株式会社 被加工物の処理方法
JP7093667B2 (ja) * 2018-04-11 2022-06-30 東京エレクトロン株式会社 成膜装置及び成膜方法
JP7043950B2 (ja) * 2018-04-11 2022-03-30 東京エレクトロン株式会社 成膜装置、及び成膜方法
JP6981356B2 (ja) 2018-04-24 2021-12-15 東京エレクトロン株式会社 成膜装置及び成膜方法
JP7146690B2 (ja) 2018-05-02 2022-10-04 エーエスエム アイピー ホールディング ビー．ブイ． 堆積および除去を使用した選択的層形成
JP2019207965A (ja) * 2018-05-30 2019-12-05 東京エレクトロン株式会社 成膜装置及び成膜方法
JP7061935B2 (ja) * 2018-06-21 2022-05-02 東京エレクトロン株式会社 制御装置、成膜装置、制御方法、成膜方法、および制御プログラム
US12482648B2 (en) 2018-10-02 2025-11-25 Asm Ip Holding B.V. Selective passivation and selective deposition
JP2020056104A (ja) 2018-10-02 2020-04-09 エーエスエム アイピー ホールディング ビー．ブイ． 選択的パッシベーションおよび選択的堆積
US11965238B2 (en) 2019-04-12 2024-04-23 Asm Ip Holding B.V. Selective deposition of metal oxides on metal surfaces
FI129918B (en) * 2019-05-02 2022-10-31 Turun Yliopisto A method of making a film
JP7236953B2 (ja) * 2019-08-05 2023-03-10 東京エレクトロン株式会社 成膜装置および成膜方法
JP7323409B2 (ja) * 2019-10-01 2023-08-08 東京エレクトロン株式会社 基板処理方法、及び、プラズマ処理装置
US11139163B2 (en) 2019-10-31 2021-10-05 Asm Ip Holding B.V. Selective deposition of SiOC thin films
TWI865747B (zh) 2020-03-30 2024-12-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 在兩不同表面上同時選擇性沉積兩不同材料
TWI862807B (zh) 2020-03-30 2024-11-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 相對於金屬表面在介電表面上之氧化矽的選擇性沉積
TW202140832A (zh) 2020-03-30 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽在金屬表面上之選擇性沉積
KR20210158811A (ko) 2020-06-24 2021-12-31 에이에스엠 아이피 홀딩 비.브이. 유기 재료의 영역 선택적 제거
US11545354B2 (en) * 2020-07-22 2023-01-03 Applied Materials, Inc. Molecular layer deposition method and system
KR20220081907A (ko) 2020-12-09 2022-06-16 에이에스엠 아이피 홀딩 비.브이. 억제제를 사용한 위치 선택적 기상 증착
TW202403076A (zh) 2021-09-30 2024-01-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 有機材料之選擇性沉積
TW202325887A (zh) 2021-10-29 2023-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 使用電漿選擇性沉積含矽及氧之材料
US12454752B2 (en) 2022-01-14 2025-10-28 Asm Ip Holding B.V. Method and apparatus for forming a patterned structure on a substrate
CN114566437B (zh) * 2022-01-19 2025-10-17 广东工业大学 一种键合丝保护层的制作方法
CN118389997B (zh) * 2024-06-26 2024-10-29 深圳市汉嵙新材料技术有限公司 二维聚合物薄膜材料及其制备方法

Family Cites Families (172)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948755A (en) 1987-10-08 1990-08-14 Standard Microsystems Corporation Method of manufacturing self-aligned conformal metallization of semiconductor wafer by selective metal deposition
US4863879A (en) 1987-12-16 1989-09-05 Ford Microelectronics, Inc. Method of manufacturing self-aligned GaAs MESFET
JPH0485024A (ja) 1990-07-30 1992-03-18 Mitsubishi Gas Chem Co Inc 銅張積層板の製造法
DE4115872A1 (de) * 1991-05-15 1992-11-19 Basf Ag Verfahren zur herstellung duenner polyimidschutzschichten auf keramischen supraleitern oder hochtemperatursupraleitern
US5447887A (en) 1994-04-01 1995-09-05 Motorola, Inc. Method for capping copper in semiconductor devices
US6251758B1 (en) 1994-11-14 2001-06-26 Applied Materials, Inc. Construction of a film on a semiconductor wafer
JP3373320B2 (ja) * 1995-02-10 2003-02-04 株式会社アルバック 銅配線製造方法
US5633036A (en) 1995-04-21 1997-05-27 The Board Of Trustees Of The University Of Illinois Selective low temperature chemical vapor deposition of titanium disilicide onto silicon regions
US5925494A (en) 1996-02-16 1999-07-20 Massachusetts Institute Of Technology Vapor deposition of polymer films for photolithography
US6342277B1 (en) 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5939334A (en) 1997-05-22 1999-08-17 Sharp Laboratories Of America, Inc. System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides
US5869135A (en) 1997-10-03 1999-02-09 Massachusetts Institute Of Technology Selective chemical vapor deposition of polymers
US20060219157A1 (en) 2001-06-28 2006-10-05 Antti Rahtu Oxide films containing titanium
US6958174B1 (en) 1999-03-15 2005-10-25 Regents Of The University Of Colorado Solid material comprising a thin metal film on its surface and methods for producing the same
KR20010001072A (ko) 1999-06-01 2001-01-05 부원영 네트웍을 이용한 온라인 축구 게임 및 그 방법
US6046108A (en) 1999-06-25 2000-04-04 Taiwan Semiconductor Manufacturing Company Method for selective growth of Cu3 Ge or Cu5 Si for passivation of damascene copper structures and device manufactured thereby
US6319635B1 (en) 1999-12-06 2001-11-20 The Regents Of The University Of California Mitigation of substrate defects in reticles using multilayer buffer layers
US6503330B1 (en) 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
FI117979B (fi) 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
US6679951B2 (en) 2000-05-15 2004-01-20 Asm Intenational N.V. Metal anneal with oxidation prevention
US7494927B2 (en) 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US6878628B2 (en) 2000-05-15 2005-04-12 Asm International Nv In situ reduction of copper oxide prior to silicon carbide deposition
US6759325B2 (en) 2000-05-15 2004-07-06 Asm Microchemistry Oy Sealing porous structures
KR100775159B1 (ko) 2000-05-15 2007-11-12 에이에스엠 인터내셔널 엔.붸. 집적회로의 생산 공정
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US7030551B2 (en) 2000-08-10 2006-04-18 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor
US7294563B2 (en) 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
JP4095763B2 (ja) 2000-09-06 2008-06-04 株式会社ルネサステクノロジ 半導体装置及びその製造方法
AU2002225761A1 (en) 2000-11-30 2002-06-11 Asm America, Inc. Thin films for magnetic devices
US6949450B2 (en) 2000-12-06 2005-09-27 Novellus Systems, Inc. Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
US7192827B2 (en) 2001-01-05 2007-03-20 Micron Technology, Inc. Methods of forming capacitor structures
US6613656B2 (en) 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
JP4921652B2 (ja) 2001-08-03 2012-04-25 エイエスエム インターナショナル エヌ．ヴェー． イットリウム酸化物およびランタン酸化物薄膜を堆積する方法
JP2003109941A (ja) 2001-09-28 2003-04-11 Canon Inc プラズマ処理装置および表面処理方法
US6809026B2 (en) 2001-12-21 2004-10-26 Applied Materials, Inc. Selective deposition of a barrier layer on a metal film
US20030192090P1 (en) 2002-04-03 2003-10-09 Meilland Alain A. Hybrid tea rose plant named 'Meibderos'
US6812153B2 (en) * 2002-04-30 2004-11-02 Applied Materials Inc. Method for high aspect ratio HDP CVD gapfill
US6586330B1 (en) 2002-05-07 2003-07-01 Tokyo Electron Limited Method for depositing conformal nitrified tantalum silicide films by thermal CVD
KR101437250B1 (ko) 2002-11-15 2014-10-13 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 금속 아미디네이트를 이용한 원자층 증착법
KR20040056026A (ko) 2002-12-23 2004-06-30 주식회사 하이닉스반도체 구리 배선의 캐핑층 형성 방법
US7115528B2 (en) 2003-04-29 2006-10-03 Micron Technology, Inc. Systems and method for forming silicon oxide layers
JP4959333B2 (ja) 2003-05-09 2012-06-20 エーエスエム アメリカ インコーポレイテッド 化学的不活性化を通じたリアクタ表面のパシベーション
US6844258B1 (en) 2003-05-09 2005-01-18 Novellus Systems, Inc. Selective refractory metal and nitride capping
US7914847B2 (en) 2003-05-09 2011-03-29 Asm America, Inc. Reactor surface passivation through chemical deactivation
US6811448B1 (en) 2003-07-15 2004-11-02 Advanced Micro Devices, Inc. Pre-cleaning for silicidation in an SMOS process
US7067407B2 (en) 2003-08-04 2006-06-27 Asm International, N.V. Method of growing electrical conductors
US7323411B1 (en) 2003-09-26 2008-01-29 Cypress Semiconductor Corporation Method of selective tungsten deposition on a silicon surface
US7375033B2 (en) 2003-11-14 2008-05-20 Micron Technology, Inc. Multi-layer interconnect with isolation layer
US7405143B2 (en) 2004-03-25 2008-07-29 Asm International N.V. Method for fabricating a seed layer
US7309395B2 (en) 2004-03-31 2007-12-18 Dielectric Systems, Inc. System for forming composite polymer dielectric film
TW200539321A (en) * 2004-05-28 2005-12-01 Applied Materials Inc Method for improving high density plasmachemical vapor deposition process
US20060019493A1 (en) 2004-07-15 2006-01-26 Li Wei M Methods of metallization for microelectronic devices utilizing metal oxide
TW200619222A (en) 2004-09-02 2006-06-16 Rohm & Haas Elect Mat Method for making organometallic compounds
US8882914B2 (en) 2004-09-17 2014-11-11 Intermolecular, Inc. Processing substrates using site-isolated processing
US7476618B2 (en) 2004-10-26 2009-01-13 Asm Japan K.K. Selective formation of metal layers in an integrated circuit
US20060156979A1 (en) 2004-11-22 2006-07-20 Applied Materials, Inc. Substrate processing apparatus using a batch processing chamber
US20060199399A1 (en) 2005-02-22 2006-09-07 Muscat Anthony J Surface manipulation and selective deposition processes using adsorbed halogen atoms
US7488967B2 (en) 2005-04-06 2009-02-10 International Business Machines Corporation Structure for confining the switching current in phase memory (PCM) cells
US7425350B2 (en) 2005-04-29 2008-09-16 Asm Japan K.K. Apparatus, precursors and deposition methods for silicon-containing materials
US7084060B1 (en) 2005-05-04 2006-08-01 International Business Machines Corporation Forming capping layer over metal wire structure using selective atomic layer deposition
US7402519B2 (en) 2005-06-03 2008-07-22 Intel Corporation Interconnects having sealing structures to enable selective metal capping layers
KR100695876B1 (ko) 2005-06-24 2007-03-19 삼성전자주식회사 오버레이 키 및 그 형성 방법, 오버레이 키를 이용하여형성된 반도체 장치 및 그 제조 방법.
US20070099422A1 (en) 2005-10-28 2007-05-03 Kapila Wijekoon Process for electroless copper deposition
GB2432363B (en) 2005-11-16 2010-06-23 Epichem Ltd Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition
US7595271B2 (en) 2005-12-01 2009-09-29 Asm America, Inc. Polymer coating for vapor deposition tool
TW200746268A (en) 2006-04-11 2007-12-16 Applied Materials Inc Process for forming cobalt-containing materials
JP5032145B2 (ja) 2006-04-14 2012-09-26 株式会社東芝 半導体装置
WO2007140813A1 (en) 2006-06-02 2007-12-13 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
US9245739B2 (en) 2006-11-01 2016-01-26 Lam Research Corporation Low-K oxide deposition by hydrolysis and condensation
DE102007004867B4 (de) 2007-01-31 2009-07-30 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Erhöhen der Zuverlässigkeit von kupferbasierten Metallisierungsstrukturen in einem Mikrostrukturbauelement durch Anwenden von Aluminiumnitrid
US20080241575A1 (en) 2007-03-28 2008-10-02 Lavoie Adrein R Selective aluminum doping of copper interconnects and structures formed thereby
US8039062B2 (en) 2007-09-14 2011-10-18 Sigma-Aldrich Co. Llc Methods of atomic layer deposition using hafnium and zirconium-based precursors
JP2009076590A (ja) 2007-09-19 2009-04-09 Hitachi Kokusai Electric Inc クリーニング方法
WO2009102363A2 (en) 2007-11-15 2009-08-20 Stc.Unm Ultra-thin microporous/hybrid materials
JP5198106B2 (ja) * 2008-03-25 2013-05-15 東京エレクトロン株式会社 成膜装置、及び成膜方法
US20090269507A1 (en) 2008-04-29 2009-10-29 Sang-Ho Yu Selective cobalt deposition on copper surfaces
US7993950B2 (en) 2008-04-30 2011-08-09 Cavendish Kinetics, Ltd. System and method of encapsulation
US8114301B2 (en) 2008-05-02 2012-02-14 Micron Technology, Inc. Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
US8183081B2 (en) 2008-07-16 2012-05-22 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a metal layer mask
US8425739B1 (en) 2008-09-30 2013-04-23 Stion Corporation In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials
WO2010065505A2 (en) 2008-12-01 2010-06-10 E. I. Du Pont De Nemours And Company Anode for an organic electronic device
US20100147396A1 (en) 2008-12-15 2010-06-17 Asm Japan K.K. Multiple-Substrate Transfer Apparatus and Multiple-Substrate Processing Apparatus
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US7927942B2 (en) 2008-12-19 2011-04-19 Asm International N.V. Selective silicide process
US8242019B2 (en) 2009-03-31 2012-08-14 Tokyo Electron Limited Selective deposition of metal-containing cap layers for semiconductor devices
US8071452B2 (en) 2009-04-27 2011-12-06 Asm America, Inc. Atomic layer deposition of hafnium lanthanum oxides
JP5359642B2 (ja) 2009-07-22 2013-12-04 東京エレクトロン株式会社 成膜方法
US20120189868A1 (en) 2009-07-31 2012-07-26 Akzo Nobel Chemicals International B.V. Process for the preparation of a coated substrate, coated substrate, and use thereof
KR101129090B1 (ko) 2009-09-01 2012-04-13 성균관대학교산학협력단 패턴화된 세포 배양용 기판의 제조방법, 패턴화된 세포 배양용 기판, 세포의 패턴화된 배양 방법, 및 패턴화된 세포칩
JP2011222779A (ja) * 2010-04-09 2011-11-04 Dainippon Printing Co Ltd 薄膜素子用基板の製造方法、薄膜素子の製造方法および薄膜トランジスタの製造方法
US8481355B2 (en) 2009-12-15 2013-07-09 Primestar Solar, Inc. Modular system and process for continuous deposition of a thin film layer on a substrate
US8293658B2 (en) 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
JP5222864B2 (ja) 2010-02-17 2013-06-26 株式会社ジャパンディスプレイイースト 液晶表示装置の製造方法
JP5373669B2 (ja) 2010-03-05 2013-12-18 東京エレクトロン株式会社 半導体装置の製造方法
TWI529808B (zh) 2010-06-10 2016-04-11 Ａｓｍ國際股份有限公司 使膜選擇性沈積於基板上的方法
US20110311726A1 (en) 2010-06-18 2011-12-22 Cambridge Nanotech Inc. Method and apparatus for precursor delivery
JP5400964B2 (ja) 2010-07-01 2014-01-29 東京エレクトロン株式会社 半導体装置の製造方法
US8357608B2 (en) 2010-08-09 2013-01-22 International Business Machines Corporation Multi component dielectric layer
US9487600B2 (en) 2010-08-17 2016-11-08 Uchicago Argonne, Llc Ordered nanoscale domains by infiltration of block copolymers
TW201224190A (en) 2010-10-06 2012-06-16 Applied Materials Inc Atomic layer deposition of photoresist materials and hard mask precursors
WO2012066977A1 (ja) 2010-11-19 2012-05-24 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
US20120219824A1 (en) 2011-02-28 2012-08-30 Uchicago Argonne Llc Atomic layer deposition of super-conducting niobium silicide
US8980418B2 (en) 2011-03-24 2015-03-17 Uchicago Argonne, Llc Sequential infiltration synthesis for advanced lithography
JP2012209393A (ja) * 2011-03-29 2012-10-25 Tokyo Electron Ltd クリーニング方法及び成膜方法
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
DE102011051260A1 (de) * 2011-06-22 2012-12-27 Aixtron Se Verfahren und Vorrichtung zum Abscheiden von OLEDs
KR20130007059A (ko) 2011-06-28 2013-01-18 삼성전자주식회사 반도체 장치의 제조 방법
EP2557132B1 (en) 2011-08-10 2018-03-14 3M Innovative Properties Company Multilayer adhesive film, in particular for bonding optical sensors
JP6202798B2 (ja) 2011-10-12 2017-09-27 エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． 酸化アンチモン膜の原子層堆積
US9112003B2 (en) 2011-12-09 2015-08-18 Asm International N.V. Selective formation of metallic films on metallic surfaces
US9238865B2 (en) 2012-02-06 2016-01-19 Asm Ip Holding B.V. Multiple vapor sources for vapor deposition
JP6020239B2 (ja) * 2012-04-27 2016-11-02 東京エレクトロン株式会社 成膜方法及び成膜装置
JP5966618B2 (ja) * 2012-05-28 2016-08-10 東京エレクトロン株式会社 成膜方法
JP5862459B2 (ja) 2012-05-28 2016-02-16 東京エレクトロン株式会社 成膜方法
US11037923B2 (en) 2012-06-29 2021-06-15 Intel Corporation Through gate fin isolation
JP6040609B2 (ja) 2012-07-20 2016-12-07 東京エレクトロン株式会社 成膜装置及び成膜方法
US8890264B2 (en) 2012-09-26 2014-11-18 Intel Corporation Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface
US9099490B2 (en) 2012-09-28 2015-08-04 Intel Corporation Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation
JP2014093331A (ja) 2012-10-31 2014-05-19 Tokyo Electron Ltd 重合膜の成膜方法、成膜装置の環境維持方法、成膜装置、並びに電子製品の製造方法
US9330899B2 (en) 2012-11-01 2016-05-03 Asm Ip Holding B.V. Method of depositing thin film
US8963135B2 (en) 2012-11-30 2015-02-24 Intel Corporation Integrated circuits and systems and methods for producing the same
US8993404B2 (en) 2013-01-23 2015-03-31 Intel Corporation Metal-insulator-metal capacitor formation techniques
US9566609B2 (en) 2013-01-24 2017-02-14 Corning Incorporated Surface nanoreplication using polymer nanomasks
JP5949586B2 (ja) * 2013-01-31 2016-07-06 東京エレクトロン株式会社 原料ガス供給装置、成膜装置、原料の供給方法及び記憶媒体
US20140227461A1 (en) 2013-02-14 2014-08-14 Dillard University Multiple Beam Pulsed Laser Deposition Of Composite Films
US10573511B2 (en) 2013-03-13 2020-02-25 Asm Ip Holding B.V. Methods for forming silicon nitride thin films
US9147574B2 (en) 2013-03-14 2015-09-29 Tokyo Electron Limited Topography minimization of neutral layer overcoats in directed self-assembly applications
US9136110B2 (en) 2013-03-15 2015-09-15 Tokyo Electron Limited Multi-step bake apparatus and method for directed self-assembly lithography control
US20140273290A1 (en) 2013-03-15 2014-09-18 Tokyo Electron Limited Solvent anneal processing for directed-self assembly applications
US9159558B2 (en) 2013-03-15 2015-10-13 International Business Machines Corporation Methods of reducing defects in directed self-assembled structures
JP2014188656A (ja) 2013-03-28 2014-10-06 Tokyo Electron Ltd 中空構造体の製造方法
JP5605464B2 (ja) * 2013-06-25 2014-10-15 東京エレクトロン株式会社 成膜装置及びそのクリーニング方法
KR102099841B1 (ko) 2013-06-28 2020-04-13 인텔 코포레이션 선택적 에피택셜 성장된 iii-v족 재료 기반 디바이스
US9362163B2 (en) 2013-07-30 2016-06-07 Lam Research Corporation Methods and apparatuses for atomic layer cleaning of contacts and vias
JP6111171B2 (ja) 2013-09-02 2017-04-05 東京エレクトロン株式会社 成膜方法及び成膜装置
US9385033B2 (en) 2013-09-27 2016-07-05 Intel Corporation Method of forming a metal from a cobalt metal precursor
US9530733B2 (en) 2013-09-27 2016-12-27 Intel Corporation Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regions
US9067958B2 (en) 2013-10-14 2015-06-30 Intel Corporation Scalable and high yield synthesis of transition metal bis-diazabutadienes
US20150118863A1 (en) 2013-10-25 2015-04-30 Lam Research Corporation Methods and apparatus for forming flowable dielectric films having low porosity
JP6135475B2 (ja) * 2013-11-20 2017-05-31 東京エレクトロン株式会社 ガス供給装置、成膜装置、ガス供給方法及び記憶媒体
TW201525173A (zh) 2013-12-09 2015-07-01 Applied Materials Inc 選擇性層沉積之方法
US9236292B2 (en) 2013-12-18 2016-01-12 Intel Corporation Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)
US9831306B2 (en) 2013-12-19 2017-11-28 Intel Corporation Self-aligned gate edge and local interconnect and method to fabricate same
US9455150B2 (en) 2013-12-24 2016-09-27 Intel Corporation Conformal thin film deposition of electropositive metal alloy films
TWI686499B (zh) 2014-02-04 2020-03-01 荷蘭商Ａｓｍ Ｉｐ控股公司 金屬、金屬氧化物與介電質的選擇性沉積
TWI624515B (zh) 2014-02-10 2018-05-21 國立清華大學 無機－有機複合氧化物聚合體及其製備方法
JP6254459B2 (ja) 2014-02-27 2017-12-27 東京エレクトロン株式会社 重合膜の耐薬品性改善方法、重合膜の成膜方法、成膜装置、および電子製品の製造方法
EP2918701A1 (en) * 2014-03-14 2015-09-16 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Method of manufacturing a stacked organic light emitting diode, stacked OLED device, and apparatus for manufacturing thereof
KR102287787B1 (ko) 2014-03-27 2021-08-10 인텔 코포레이션 광 지원형 금속 원자층 퇴적(ald) 및 화학 기상 퇴적(cvd)을 위한 전구체 및 프로세스 설계
SG11201606451QA (en) 2014-03-28 2016-09-29 Intel Corp Selective epitaxially grown iii-v materials based devices
US10047435B2 (en) 2014-04-16 2018-08-14 Asm Ip Holding B.V. Dual selective deposition
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US11021630B2 (en) 2014-12-30 2021-06-01 Rohm And Haas Electronic Materials Llc Copolymer formulation for directed self assembly, methods of manufacture thereof and articles comprising the same
US9816180B2 (en) 2015-02-03 2017-11-14 Asm Ip Holding B.V. Selective deposition
US9490145B2 (en) 2015-02-23 2016-11-08 Asm Ip Holding B.V. Removal of surface passivation
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US9646883B2 (en) 2015-06-12 2017-05-09 International Business Machines Corporation Chemoepitaxy etch trim using a self aligned hard mask for metal line to via
US10428421B2 (en) 2015-08-03 2019-10-01 Asm Ip Holding B.V. Selective deposition on metal or metallic surfaces relative to dielectric surfaces
US10566185B2 (en) 2015-08-05 2020-02-18 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
US10121699B2 (en) 2015-08-05 2018-11-06 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
US10695794B2 (en) 2015-10-09 2020-06-30 Asm Ip Holding B.V. Vapor phase deposition of organic films
US10551741B2 (en) 2016-04-18 2020-02-04 Asm Ip Holding B.V. Method of forming a directed self-assembled layer on a substrate
US10204782B2 (en) 2016-04-18 2019-02-12 Imec Vzw Combined anneal and selective deposition process
US20170298503A1 (en) 2016-04-18 2017-10-19 Asm Ip Holding B.V. Combined anneal and selective deposition systems
US11081342B2 (en) 2016-05-05 2021-08-03 Asm Ip Holding B.V. Selective deposition using hydrophobic precursors
US10453701B2 (en) 2016-06-01 2019-10-22 Asm Ip Holding B.V. Deposition of organic films
US10373820B2 (en) 2016-06-01 2019-08-06 Asm Ip Holding B.V. Deposition of organic films
US9803277B1 (en) 2016-06-08 2017-10-31 Asm Ip Holding B.V. Reaction chamber passivation and selective deposition of metallic films
JP7169072B2 (ja) 2017-02-14 2022-11-10 エーエスエム アイピー ホールディング ビー．ブイ． 選択的パッシベーションおよび選択的堆積
US9911595B1 (en) 2017-03-17 2018-03-06 Lam Research Corporation Selective growth of silicon nitride

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