JP6899216B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6899216B2 JP6899216B2 JP2016253881A JP2016253881A JP6899216B2 JP 6899216 B2 JP6899216 B2 JP 6899216B2 JP 2016253881 A JP2016253881 A JP 2016253881A JP 2016253881 A JP2016253881 A JP 2016253881A JP 6899216 B2 JP6899216 B2 JP 6899216B2
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- film
- oxide semiconductor
- insulating film
- transistor
- semiconductor film
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Images
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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Description
本実施の形態では、本発明の一態様の半導体装置及び半導体装置の作製方法について、図1乃至図17を参照して説明する。
図1(A)は、本発明の一態様の半導体装置100の上面図であり、図1(B)は、図1(A)に示す一点鎖線A1−A2間における切断面の断面図に相当する。なお、図1(B)は、トランジスタTr1のチャネル長(L)方向の断面、及びトランジスタTr2のチャネル長(L)方向の断面を含む。
ここで、図1(A)(B)に示す半導体装置100を表示装置の画素回路に適用する場合の一例について、図2を用いて説明する。
再び、図1(A)(B)に示す半導体装置100の説明を行う。図1(A)(B)に示す半導体装置100を表示装置の画素に適用する場合、例えば、トランジスタのチャネル長(L)及びチャネル幅(W)、あるいはトランジスタに接続する配線及び電極の線幅などを比較的大きくすることができる。例えば、トランジスタTr1とトランジスタTr2とを同じ平面上に配置する場合と比較して、図1(A)(B)に示すように、トランジスタTr1とトランジスタTr2との少なくとも一部を重ねて配置することで、線幅などを大きくすることができるため、加工寸法のばらつきを低減することが可能となる。
また、図1(A)(B)に示すように、トランジスタTr1及びトランジスタTr2は、それぞれ、ゲート電極を2つ有する構成である。
次に、本実施の形態の半導体装置に含まれる構成要素について、詳細に説明する。
基板102の材質などに大きな制限はないが、少なくとも、後の熱処理に耐えうる程度の耐熱性を有している必要がある。例えば、ガラス基板、セラミック基板、石英基板、サファイア基板等を、基板102として用いてもよい。また、シリコンや炭化シリコンを材料とした単結晶半導体基板、多結晶半導体基板、シリコンゲルマニウム等の化合物半導体基板、SOI基板等を適用することも可能であり、これらの基板上に半導体素子が設けられたものを、基板102として用いてもよい。なお、基板102として、ガラス基板を用いる場合、第6世代(1500mm×1850mm)、第7世代(1870mm×2200mm)、第8世代(2200mm×2400mm)、第9世代(2400mm×2800mm)、第10世代(2950mm×3400mm)等の大面積基板を用いることで、大型の表示装置を作製することができる。
導電膜104、導電膜112a、導電膜112b、導電膜122a、導電膜122b、導電膜122c、導電膜130、導電膜138、及び導電膜144としては、クロム(Cr)、銅(Cu)、アルミニウム(Al)、金(Au)、銀(Ag)、亜鉛(Zn)、モリブデン(Mo)、タンタル(Ta)、チタン(Ti)、タングステン(W)、マンガン(Mn)、ニッケル(Ni)、鉄(Fe)、コバルト(Co)から選ばれた金属元素、または上述した金属元素を成分とする合金か、上述した金属元素を組み合わせた合金等を用いてそれぞれ形成することができる。
絶縁膜106、絶縁膜114、絶縁膜116、絶縁膜124、絶縁膜126、絶縁膜134、絶縁膜136、及び絶縁膜140としては、酸化シリコン膜、酸化窒化シリコン膜、窒化酸化シリコン膜、窒化シリコン膜、酸化アルミニウム膜、酸化ハフニウム膜、酸化イットリウム膜、酸化ジルコニウム膜、酸化ガリウム膜、酸化タンタル膜、酸化マグネシウム膜、酸化ランタン膜、酸化セリウム膜および酸化ネオジム膜を一種以上含む絶縁層を、それぞれ用いることができる。
酸化物半導体膜108及び酸化物半導体膜128としては、それぞれ先に示す材料を用いることができる。
また、酸化物半導体膜108及び酸化物半導体膜128におけるSIMS分析により得られる炭素濃度を、それぞれ2×1018atoms/cm3以下、好ましくは2×1017atoms/cm3以下とする。
次に、図1(A)(B)に示す半導体装置100の変形例について、図4(A)(B)及び図5を用いて説明する。
次に、図1(A)(B)に示す半導体装置100の変形例について、図6(A)(B)及び図7を用いて説明する。
次に、本発明の一態様の半導体装置100の作製方法について、図8乃至図17を用いて説明する。
本実施の形態では、本発明の一態様の半導体装置及び半導体装置の作製方法について、図18乃至図29を参照して説明する。
図18(A)は、本発明の一態様の半導体装置200の上面図であり、図18(B)は、図18(A)に示す一点鎖線A1−A2間における切断面の断面図に相当する。なお、図18(B)は、トランジスタTr1のチャネル長(L)方向の断面、及びトランジスタTr2のチャネル長(L)方向の断面を含む。
次に、本実施の形態の半導体装置に含まれる構成要素について、詳細に説明する。
導電膜212a、212b、218a、218bとしては、実施の形態1に記載の導電膜(導電膜104、導電膜112a、導電膜112b、導電膜122a、導電膜122b、導電膜122c、導電膜130、導電膜138、及び導電膜144)の材料を用いることができる。特に、導電膜212a、212bには、酸化物導電体(OC)を用いると、絶縁膜210a、210bに酸素を添加できるため好適である。
絶縁膜118、119、214、216、210a、210bとしては、実施の形態1に記載の絶縁膜(絶縁膜106、絶縁膜114、絶縁膜116、絶縁膜124、絶縁膜126、絶縁膜134、絶縁膜136、及び絶縁膜140)の材料を用いることができる。
酸化物半導体膜208としては、実施の形態1に記載の酸化物半導体膜(酸化物半導体膜108、及び酸化物半導体膜128)の材料を用いることができる。
次に、本発明の一態様の半導体装置200の作製方法について、図19乃至図29を用いて説明する。
本実施の形態では、本発明の一態様の半導体装置及び半導体装置の作製方法について、図30乃至図45を参照して説明する。
図30(A)は、本発明の一態様の半導体装置300の上面図であり、図30(B)は、図30(A)に示す一点鎖線A1−A2間における切断面の断面図に相当する。なお、図30(B)は、トランジスタTr1のチャネル長(L)方向の断面、及びトランジスタTr2のチャネル長(L)方向の断面を含む。
ここで、図30(A)(B)に示す半導体装置300を表示装置の画素回路に適用する場合の一例について、図31を用いて説明する。
再び、図30(A)(B)に示す半導体装置300の説明を行う。図30(A)(B)に示す半導体装置300を表示装置の画素に適用する場合、例えば、トランジスタのチャネル長(L)及びチャネル幅(W)、あるいはトランジスタに接続する配線及び電極の線幅などを比較的大きくすることができる。例えば、トランジスタTr1とトランジスタTr2とを同じ平面上に配置する場合と比較して、図30(A)(B)に示すように、トランジスタTr1とトランジスタTr2との少なくとも一部を重ねて配置することで、線幅などを大きくすることができるため、加工寸法のばらつきを低減することが可能となる。
また、図30(A)(B)に示すように、トランジスタTr2は、ゲート電極を2つ有する構成である。
次に、本実施の形態の半導体装置に含まれる構成要素について、詳細に説明する。
基板302の材質などに大きな制限はないが、少なくとも、後の熱処理に耐えうる程度の耐熱性を有している必要がある。例えば、ガラス基板、セラミック基板、石英基板、サファイア基板等を、基板302として用いてもよい。また、シリコンや炭化シリコンを材料とした単結晶半導体基板、多結晶半導体基板、シリコンゲルマニウム等の化合物半導体基板、SOI基板等を適用することも可能であり、これらの基板上に半導体素子が設けられたものを、基板302として用いてもよい。なお、基板302として、ガラス基板を用いる場合、第6世代(1500mm×1850mm)、第7世代(1870mm×2200mm)、第8世代(2200mm×2400mm)、第9世代(2400mm×2800mm)、第10世代(2950mm×3400mm)等の大面積基板を用いることで、大型の表示装置を作製することができる。
導電膜312a、導電膜312b、導電膜320、導電膜322a、導電膜322b、導電膜330、導電膜338、及び導電膜344としては、クロム(Cr)、銅(Cu)、アルミニウム(Al)、金(Au)、銀(Ag)、亜鉛(Zn)、モリブデン(Mo)、タンタル(Ta)、チタン(Ti)、タングステン(W)、マンガン(Mn)、ニッケル(Ni)、鉄(Fe)、コバルト(Co)から選ばれた金属元素、または上述した金属元素を成分とする合金か、上述した金属元素を組み合わせた合金等を用いてそれぞれ形成することができる。
絶縁膜306、絶縁膜314、絶縁膜316、絶縁膜318、絶縁膜324、絶縁膜326、絶縁膜334、絶縁膜336、及び絶縁膜340としては、酸化シリコン膜、酸化窒化シリコン膜、窒化酸化シリコン膜、窒化シリコン膜、酸化アルミニウム膜、酸化ハフニウム膜、酸化イットリウム膜、酸化ジルコニウム膜、酸化ガリウム膜、酸化タンタル膜、酸化マグネシウム膜、酸化ランタン膜、酸化セリウム膜および酸化ネオジム膜を一種以上含む絶縁層を、それぞれ用いることができる。
酸化物半導体膜308及び酸化物半導体膜328としては、それぞれ先に示す材料を用いることができる。
また、酸化物半導体膜308及び酸化物半導体膜328におけるSIMS分析により得られる炭素濃度を、それぞれ2×1018atoms/cm3以下、好ましくは2×1017atoms/cm3以下とする。
次に、図30(A)(B)に示す半導体装置300の変形例について、図33を用いて説明する。
次に、図30(A)(B)に示す半導体装置300の変形例について、図34(A)(B)及び図35(A)(B)を用いて説明する。
次に、本発明の一態様の半導体装置300の作製方法について、図36乃至図45を用いて説明する。
本実施の形態では、本発明の一態様の半導体装置及び半導体装置の作製方法について、図46乃至図53を参照して説明する。
図46(A)は、本発明の一態様の半導体装置400の上面図であり、図46(B)は、図46(A)に示す一点鎖線A1−A2間における切断面の断面図に相当する。なお、図46(B)は、トランジスタTr1のチャネル長(L)方向の断面、及びトランジスタTr2のチャネル長(L)方向の断面を含む。
次に、本実施の形態の半導体装置に含まれる構成要素について、詳細に説明する。
導電膜412b、418a、418bとしては、実施の形態3に記載の導電膜(導電膜312a、導電膜312b、導電膜322a、導電膜322b、導電膜320、導電膜330、導電膜338、及び導電膜344)の材料を用いることができる。特に、導電膜412bには、酸化物導電体(OC)を用いると、絶縁膜410bに酸素を添加できるため好適である。
絶縁膜414、416、410bとしては、実施の形態3に記載の絶縁膜(絶縁膜306、絶縁膜314、絶縁膜316、絶縁膜318、絶縁膜324、絶縁膜326、絶縁膜334、絶縁膜336、及び絶縁膜340)の材料を用いることができる。
酸化物半導体膜408としては、実施の形態3に記載の酸化物半導体膜(酸化物半導体膜308、及び酸化物半導体膜328)の材料を用いることができる。
次に、本発明の一態様の半導体装置400の作製方法について、図47乃至図53を用いて説明する。
本実施の形態では、本発明の一態様の半導体装置に用いることのできる発光素子について、図54乃至図56を用いて説明する。
まず、本発明の一態様の半導体装置に用いることのできる発光素子の構成について、図54を用いて説明する。図54は、発光素子160の断面模式図である。
発光層150に用いることができる材料について、それぞれ以下に説明する。
正孔注入層151は、一対の電極の一方(導電膜138または導電膜144)からのホール注入障壁を低減することでホール注入を促進する機能を有し、例えば遷移金属酸化物、フタロシアニン誘導体、あるいは芳香族アミンなどによって形成される。遷移金属酸化物としては、モリブデン酸化物やバナジウム酸化物、ルテニウム酸化物、タングステン酸化物、マンガン酸化物などが挙げられる。フタロシアニン誘導体としては、フタロシアニンや金属フタロシアニンなどが挙げられる。芳香族アミンとしてはベンジジン誘導体やフェニレンジアミン誘導体などが挙げられる。ポリチオフェンやポリアニリンなどの高分子化合物を用いることもでき、例えば自己ドープされたポリチオフェンであるポリ(エチレンジオキシチオフェン)/ポリ(スチレンスルホン酸)などがその代表例である。また、ポリビニルカルバゾール及びその誘導体や、側鎖または主鎖に芳香族アミン骨格またはπ電子過剰型複素芳香族骨格を有するポリアリーレン及びその誘導体、などが挙げられる。
正孔注入層151と発光層150との間に正孔輸送層を設けてもよい。正孔輸送層は正孔輸送性材料を含む層であり、正孔注入層151の材料として例示した正孔輸送性材料を使用することができる。正孔輸送層は正孔注入層151に注入された正孔を発光層150へ輸送する機能を有するため、正孔注入層151のHOMO(Highest Occupied Molecular Orbital、最高被占軌道ともいう)準位と同じ、あるいは近いHOMO準位を有することが好ましい。
発光層150と電子注入層との間に電子輸送層を設けてもよい。電子輸送層は、電子注入層154を経て一対の電極の他方(導電膜138または導電膜144)から注入された電子を発光層150へ輸送する機能を有する。電子輸送性材料としては、正孔よりも電子の輸送性の高い材料を用いることができ、1×10−6cm2/Vs以上の電子移動度を有する材料であることが好ましい。電子を受け取りやすい材料(電子輸送性を有する材料)としては、含窒素複素芳香族化合物のようなπ電子不足型複素芳香族化合物や金属錯体などを用いることができる。具体的には、発光層150に用いることができる電子輸送性材料として挙げたキノリン配位子、ベンゾキノリン配位子、オキサゾール配位子、あるいはチアゾール配位子等を有する金属錯体が挙げられる。また、オキサジアゾール誘導体、トリアゾール誘導体、フェナントロリン誘導体、ピリジン誘導体、ビピリジン誘導体、ピリミジン誘導体などが挙げられる。また、ポリフェニレン、ポリフルオレン及びその誘導体などの高分子化合物であってもよい。また、1×10−6cm2/Vs以上の電子移動度を有する物質であることが好ましい。なお、正孔よりも電子の輸送性の高い物質であれば、上記以外の物質を電子輸送層として用いても構わない。また、電子輸送層は、単層だけでなく、上記物質からなる層が二層以上積層してもよい。
電子注入層154は導電膜144からの電子注入障壁を低減することで電子注入を促進する機能を有し、例えば第1族金属、第2族金属、あるいはこれらの酸化物、ハロゲン化物、炭酸塩などを用いることができる。また、先に示す電子輸送性材料と、これに対して電子供与性を示す材料の複合材料を用いることもできる。電子供与性を示す材料としては、第1族金属、第2族金属、あるいはこれらの酸化物などを挙げることができる。具体的には、フッ化リチウム(LiF)、フッ化ナトリウム(NaF)、フッ化セシウム(CsF)、フッ化カルシウム(CaF2)、リチウム酸化物(LiOx)等のようなアルカリ金属、アルカリ土類金属、またはそれらの化合物を用いることができる。また、フッ化エルビウム(ErF3)のような希土類金属化合物を用いることができる。また、電子注入層154にエレクトライドを用いてもよい。該エレクトライドとしては、例えば、カルシウムとアルミニウムの混合酸化物に電子を高濃度添加した物質等が挙げられる。また、電子注入層154に、電子輸送層で用いることが出来る物質を用いても良い。
導電膜138及び導電膜144は、発光素子の陽極または陰極としての機能を有する。導電膜138及び導電膜144は、金属、合金、導電性化合物、およびこれらの混合物や積層体などを用いて形成することができる。
ここで、液滴吐出法を用いてEL層142を形成する方法について、図55を用いて説明する。図55(A)乃至図55(D)は、EL層142の作製方法を説明する断面図である。
次に、液滴吐出法に用いる液滴吐出装置について、図56を用いて説明する。図56は、液滴吐出装置1400を説明する概念図である。
本実施の形態においては、本発明の一態様に用いることのできる、酸化物半導体の組成、及び酸化物半導体の構造等について、図57乃至図64を参照して説明する。
まず、酸化物半導体の組成について説明する。
次に、酸化物半導体のキャリア密度について、以下に説明を行う。
次に、酸化物半導体の構造について説明する。
まずは、CAAC−OSについて説明する。
次に、nc−OSについて説明する。
a−like OSは、nc−OSと非晶質酸化物半導体との間の構造を有する酸化物半導体である。
本実施の形態においては、先の実施の形態で例示した半導体装置を有する表示装置の一例について、図65乃至図67を用いて以下説明を行う。
図65は、表示装置の一例を示す上面図である。図65に示す表示装置700は、第1の基板701上に設けられた画素部702と、第1の基板701に設けられたソースドライバ回路部704及びゲートドライバ回路部706と、画素部702、ソースドライバ回路部704、及びゲートドライバ回路部706を囲むように配置されるシール材712と、第1の基板701に対向するように設けられる第2の基板705と、を有する。なお、第1の基板701と第2の基板705は、シール材712によって封止されている。すなわち、画素部702、ソースドライバ回路部704、及びゲートドライバ回路部706は、第1の基板701とシール材712と第2の基板705によって封止されている。なお、図65には図示しないが、第1の基板701と第2の基板705の間には表示素子が設けられる。
次に、実施の形態1に示す半導体装置100を用いる表示装置の構成について、図66を用いて説明する。なお、図66は、図65に示す一点鎖線Q−Rの切断面に相当する断面図である。
また、図66に示す表示装置700に入出力装置を設けてもよい。当該入出力装置としては、例えば、タッチパネル等が挙げられる。
本実施の形態では、本発明の一態様の半導体装置を有する表示装置の一例について、図68を用いて説明する。
図68は、本発明の一態様の半導体装置を有する表示装置の一例を示すブロック図である。
画素部512は、X行(Xは2以上の自然数)Y列(Yは2以上の自然数)に配置された複数の表示素子を駆動するための回路(以下、画素回路514という)を有し、ゲート線駆動回路516は、画素回路514を選択する信号(走査信号)を出力する機能を有し、信号線駆動回路518は、画素回路514が有する表示素子を駆動するための信号(データ信号)を供給するため機能を有する。
ゲート線駆動回路516及び信号線駆動回路518のいずれか一方または双方は、画素部512と同一基板上に形成されていることが望ましい。これにより、部品数や端子数を減らすことが出来る。ゲート線駆動回路516及び信号線駆動回路518のいずれか一方または双方が、画素部512と同一基板上に形成されていない場合には、ゲート線駆動回路516及び信号線駆動回路518のいずれか一方または双方を、COGやTAB(Tape Automated Bonding)によって、実装することができる。
保護回路513は、例えば、ゲート線駆動回路516と画素回路514の間の配線である走査線GLに接続される。または、保護回路513は、信号線駆動回路518と画素回路514の間の配線であるデータ線DLに接続される。または、保護回路513は、ゲート線駆動回路516と端子部517との間の配線に接続することができる。または、保護回路513は、信号線駆動回路518と端子部517との間の配線に接続することができる。なお、端子部517は、外部の回路から表示装置に電源及び制御信号、及び画像信号を入力するための端子を有する。
本実施の形態では、本発明の一態様の半導体装置を有する表示モジュール及び電子機器について、図69乃至図72を用いて説明を行う。
図69に示す表示モジュール7000は、上部カバー7001と下部カバー7002との間に、FPC7003に接続されたタッチパネル7004、FPC7005に接続された表示パネル7006、バックライト7007、フレーム7009、プリント基板7010、バッテリ7011を有する。
次に、図70(A)乃至図70(E)に電子機器の一例を示す。
次に、図70(A)乃至図70(E)に示す電子機器と、異なる電子機器の一例を図71(A)乃至図71(G)に示す。
102 基板
104 導電膜
106 絶縁膜
108 酸化物半導体膜
108a 酸化物半導体膜
108b 酸化物半導体膜
108c 酸化物半導体膜
112a 導電膜
112b 導電膜
112c 導電膜
114 絶縁膜
116 絶縁膜
118 絶縁膜
119 絶縁膜
122a 導電膜
122b 導電膜
122c 導電膜
124 絶縁膜
126 絶縁膜
128 酸化物半導体膜
130 導電膜
134 絶縁膜
136 絶縁膜
138 導電膜
140 絶縁膜
142 EL層
144 導電膜
150 発光層
151 正孔注入層
152 正孔輸送層
153 電子輸送層
154 電子注入層
160 発光素子
181 開口部
182 開口部
183 開口部
184 開口部
186 開口部
200 半導体装置
208 酸化物半導体膜
210a 絶縁膜
210b 絶縁膜
212a 導電膜
212b 導電膜
214 絶縁膜
216 絶縁膜
218a 導電膜
218b 導電膜
282a 開口部
282b 開口部
300 半導体装置
302 基板
306 絶縁膜
308 酸化物半導体膜
308d ドレイン領域
308i チャネル領域
308s ソース領域
310 絶縁膜
312a 導電膜
312b 導電膜
314 絶縁膜
316 絶縁膜
318 絶縁膜
320 導電膜
322a 導電膜
322b 導電膜
324 絶縁膜
326 絶縁膜
328 酸化物半導体膜
328a 酸化物半導体膜
328b 酸化物半導体膜
328c 酸化物半導体膜
330 導電膜
334 絶縁膜
336 絶縁膜
338 導電膜
340 絶縁膜
341a 開口部
341b 開口部
342 EL層
344 導電膜
360 発光素子
382 開口部
383 開口部
384 開口部
386 開口部
400 半導体装置
408 酸化物半導体膜
408d ドレイン領域
408i チャネル領域
408s ソース領域
410b 絶縁膜
412b 導電膜
414 絶縁膜
416 絶縁膜
418a 導電膜
418b 導電膜
482a 開口部
482b 開口部
512 画素部
513 保護回路
514 画素回路
516 ゲート線駆動回路
517 端子部
518 信号線駆動回路
664 電極
665 電極
667 電極
683 液滴吐出装置
684 液滴
685 層
700 表示装置
701 基板
702 画素部
704 ソースドライバ回路部
705 基板
706 ゲートドライバ回路部
708 FPC端子部
710 信号線
712 シール材
716 FPC
732 封止膜
734 絶縁膜
736 着色膜
738 遮光膜
778 構造体
791 タッチパネル
792 絶縁膜
793 電極
794 電極
795 絶縁膜
796 電極
797 絶縁膜
1400 液滴吐出装置
1402 基板
1403 液滴吐出手段
1404 撮像手段
1405 ヘッド
1406 空間
1407 制御手段
1408 記憶媒体
1409 画像処理手段
1410 コンピュータ
1411 マーカー
1412 ヘッド
1413 材料供給源
1414 材料供給源
7000 表示モジュール
7001 上部カバー
7002 下部カバー
7003 FPC
7004 タッチパネル
7005 FPC
7006 表示パネル
7007 バックライト
7008 光源
7009 フレーム
7010 プリント基板
7011 バッテリ
8000 カメラ
8001 筐体
8002 表示部
8003 操作ボタン
8004 シャッターボタン
8006 レンズ
8100 ファインダー
8101 筐体
8102 表示部
8103 ボタン
8200 ヘッドマウントディスプレイ
8201 装着部
8202 レンズ
8203 本体
8204 表示部
8205 ケーブル
8206 バッテリ
8300 ヘッドマウントディスプレイ
8301 筐体
8302 表示部
8304 固定具
8305 レンズ
9000 筐体
9001 表示部
9003 スピーカ
9005 操作キー
9006 接続端子
9007 センサ
9008 マイクロフォン
9050 操作ボタン
9051 情報
9052 情報
9053 情報
9054 情報
9055 ヒンジ
9100 テレビジョン装置
9101 携帯情報端末
9102 携帯情報端末
9200 携帯情報端末
9201 携帯情報端末
9500 表示装置
9501 表示パネル
9502 表示領域
9503 領域
9511 軸部
9512 軸受部
Claims (12)
- 第1のトランジスタと、第2のトランジスタと、を有する半導体装置であって、
前記第1のトランジスタは、
第1のゲート電極と、
前記第1のゲート電極上の第1の絶縁膜と、
前記第1の絶縁膜上の第1の酸化物半導体膜と、
前記第1の酸化物半導体膜上の第1のソース電極と、
前記第1の酸化物半導体膜上の第1のドレイン電極と、
前記第1の酸化物半導体膜、前記第1のソース電極、及び前記第1のドレイン電極上の第2の絶縁膜と、
前記第2の絶縁膜上の第2のゲート電極と、を有し、
前記第2のトランジスタは、
前記第1のドレイン電極と、
前記第1のドレイン電極上の前記第2の絶縁膜と、
前記第2の絶縁膜上の第2の酸化物半導体膜と、
前記第2の酸化物半導体膜上の第2のソース電極と、
前記第2の酸化物半導体膜上の第2のドレイン電極と、
前記第2の酸化物半導体膜、前記第2のソース電極、及び前記第2のドレイン電極上の第3の絶縁膜と、
前記第3の絶縁膜上の第3のゲート電極と、を有し、
前記第1の酸化物半導体膜と、前記第2の酸化物半導体膜とは、互いに重なる領域を有する、半導体装置。 - 第1のトランジスタと、第2のトランジスタと、を有する半導体装置であって、
前記第1のトランジスタは、
第1のゲート電極と、
前記第1のゲート電極上の第1の絶縁膜と、
前記第1の絶縁膜上の第1の酸化物半導体膜と、
前記第1の酸化物半導体膜上の第1のソース電極と、
前記第1の酸化物半導体膜上の第1のドレイン電極と、
前記第1の酸化物半導体膜、前記第1のソース電極、及び前記第1のドレイン電極上の第2の絶縁膜と、
前記第2の絶縁膜の上の第2のゲート電極と、を有し、
前記第2のトランジスタは、
前記第1の絶縁膜上の第3のゲート電極と、
前記第3のゲート電極上の前記第2の絶縁膜と、
前記第2の絶縁膜上に形成され、チャネル領域、ソース領域、及びドレイン領域を有する第2の酸化物半導体膜と、
前記チャネル領域と接する第3の絶縁膜と、
前記第3の絶縁膜と接する第4のゲート電極と、
前記ソース領域、前記ドレイン領域、及び前記第4のゲート電極と接する第4の絶縁膜と、
前記ソース領域に電気的に接続される第2のソース電極と、
前記ドレイン領域に電気的に接続される第2のドレイン電極と、を有し、
前記第1の酸化物半導体膜と、前記第2の酸化物半導体膜とは、互いに重なる領域を有する、半導体装置。 - 請求項1または請求項2において、
前記第1のゲート電極、及び前記第2のゲート電極は、
前記第1の絶縁膜及び前記第2の絶縁膜に設けられる開口部において接続され、
且つ、前記第1の酸化物半導体膜の側端部よりも外側に位置する領域を有する、半導体装置。 - 請求項1乃至請求項3のいずれか一項において、
前記第1の酸化物半導体膜及び前記第2の酸化物半導体膜のいずれか一方または双方は、Inと、M(MはAl、Ga、Y、またはSn)と、Znと、を有する、半導体装置。 - 請求項4において、
前記In、前記M、及び前記Znの原子数の比は、In:M:Zn=4:2:3近傍であり、
前記Inが4の場合、前記Mが1.5以上2.5以下であり、且つ前記Znが2以上4以下である、半導体装置。 - 請求項1乃至請求項5のいずれか一項において、
前記第1の酸化物半導体膜及び前記第2の酸化物半導体膜のいずれか一方または双方は、結晶部を有し、
前記結晶部は、c軸配向性を有する、半導体装置。 - 第1のトランジスタと、第2のトランジスタとを有する半導体装置であって、
前記第1のトランジスタは、
第1の酸化物半導体膜と、
前記第1の酸化物半導体膜上の第1の絶縁膜と、
前記第1の絶縁膜を間に挟んで前記第1の酸化物半導体膜と重なる領域を有する、第1の導電膜と、
前記第1の酸化物半導体膜上、及び前記第1の導電膜上の第2の絶縁膜と、
前記第1の酸化物半導体膜上の第2の導電膜と、
前記第1の酸化物半導体膜上の第3の導電膜と、
前記第1の酸化物半導体膜上、前記第2の導電膜上、及び前記第3の導電膜上の第3の絶縁膜と、を有し、
前記第1の酸化物半導体膜は、前記第1の絶縁膜と接するチャネル領域と、前記第2の絶縁膜と接するソース領域と、前記第2の絶縁膜と接するドレイン領域と、を有し、
前記第2のトランジスタは、
前記第3の導電膜と、
前記第3の導電膜上の前記第3の絶縁膜と、
前記第3の絶縁膜上の第2の酸化物半導体膜と、
前記第2の酸化物半導体膜上の第4の導電膜と、
前記第2の酸化物半導体膜上の第5の導電膜と、を有し、
前記第1の酸化物半導体膜と、前記第2の酸化物半導体膜とは、互いに重なる領域を有する、半導体装置。 - 第1のトランジスタと、第2のトランジスタとを有する半導体装置であって、
前記第1のトランジスタは、
第1の酸化物半導体膜と、
前記第1の酸化物半導体膜上の第1の絶縁膜と、
前記第1の絶縁膜を間に挟んで前記第1の酸化物半導体膜と重なる領域を有する、第1の導電膜と、
前記第1の酸化物半導体膜上、及び前記第1の導電膜上の第2の絶縁膜と、
前記第1の酸化物半導体膜上の第2の導電膜と、
前記第1の酸化物半導体膜上の第3の導電膜と、
前記第1の酸化物半導体膜上、前記第2の導電膜上、及び前記第3の導電膜上の第3の絶縁膜と、を有し、
前記第1の酸化物半導体膜は、前記第1の絶縁膜と接するチャネル領域と、前記第2の絶縁膜と接するソース領域と、前記第2の絶縁膜と接するドレイン領域と、を有し、
前記第2のトランジスタは、
前記第3の導電膜と、
前記第3の導電膜上の前記第3の絶縁膜と、
前記第3の絶縁膜上の第2の酸化物半導体膜と、
前記第2の酸化物半導体膜上の第4の導電膜と、
前記第2の酸化物半導体膜上の第5の導電膜と、
前記第2の酸化物半導体膜上、前記第4の導電膜上、前記第5の導電膜上の第4の絶縁膜と、
前記第4の絶縁膜を間に挟んで前記第2の酸化物半導体膜と重なる領域を有する、第6の導電膜と、を有し、
前記第1の酸化物半導体膜と、前記第2の酸化物半導体膜とは、互いに重なる領域を有する、半導体装置。 - 第1のトランジスタと、第2のトランジスタとを有する半導体装置であって、
前記第1のトランジスタは、
第1の酸化物半導体膜と、
前記第1の酸化物半導体膜上の第1の絶縁膜と、
前記第1の絶縁膜を間に挟んで前記第1の酸化物半導体膜と重なる領域を有する、第1の導電膜と、
前記第1の酸化物半導体膜上、及び前記第1の導電膜上の第2の絶縁膜と、
前記第1の酸化物半導体膜上の第2の導電膜と、
前記第1の酸化物半導体膜上の第3の導電膜と、
前記第1の酸化物半導体膜上、前記第2の導電膜上、及び前記第3の導電膜上の第3の絶縁膜と、を有し、
前記第1の酸化物半導体膜は、前記第1の絶縁膜と接するチャネル領域と、前記第2の絶縁膜と接するソース領域と、前記第2の絶縁膜と接するドレイン領域と、を有し、
前記第2のトランジスタは、
前記第3の導電膜と、
前記第3の導電膜上の前記第3の絶縁膜と、
前記第3の絶縁膜上の第2の酸化物半導体膜と、
前記第2の酸化物半導体膜上の第4の導電膜と、
前記第2の酸化物半導体膜上の第5の導電膜と、
前記第2の酸化物半導体膜上の第4の絶縁膜と、
前記第4の絶縁膜を間に挟んで前記第2の酸化物半導体膜と重なる領域を有する、第6の導電膜と、
前記第2の酸化物半導体膜上、及び前記第6の導電膜上の第5の絶縁膜と、を有し、
前記第2の酸化物半導体膜は、前記第4の絶縁膜と接するチャネル領域と、前記第5の絶縁膜と接するソース領域と、前記第5の絶縁膜と接するドレイン領域と、を有し、
前記第1の酸化物半導体膜と、前記第2の酸化物半導体膜とは、互いに重なる領域を有する、半導体装置。 - 請求項7乃至請求項9のいずれか一項において、
前記第1の酸化物半導体膜及び前記第2の酸化物半導体膜のいずれか一方または双方は、Inと、M(MはAl、Ga、Y、またはSn)と、Znと、を有する、半導体装置。 - 請求項10において、
前記In、前記M、及び前記Znの原子数の比は、In:M:Zn=4:2:3近傍であり、
前記Inが4の場合、前記Mが1.5以上2.5以下であり、且つ前記Znが2以上4以下である、半導体装置。 - 請求項7乃至請求項11のいずれか一項において、
前記第1の酸化物半導体膜及び前記第2の酸化物半導体膜のいずれか一方または双方は、結晶部を有し、
前記結晶部は、c軸配向性を有する、半導体装置。
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CN114361180A (zh) | 2022-04-15 |
KR20180099764A (ko) | 2018-09-05 |
CN108475699B (zh) | 2021-11-16 |
CN113327948A (zh) | 2021-08-31 |
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TW201735183A (zh) | 2017-10-01 |
US10283532B2 (en) | 2019-05-07 |
JP6775096B2 (ja) | 2020-10-28 |
KR102595042B1 (ko) | 2023-10-26 |
TW202315137A (zh) | 2023-04-01 |
TWI718224B (zh) | 2021-02-11 |
CN108475699A (zh) | 2018-08-31 |
US20180197888A1 (en) | 2018-07-12 |
WO2017115214A1 (en) | 2017-07-06 |
TWI773105B (zh) | 2022-08-01 |
JP2020174181A (ja) | 2020-10-22 |
TW202131522A (zh) | 2021-08-16 |
JP2021170643A (ja) | 2021-10-28 |
US20170186778A1 (en) | 2017-06-29 |
JP2017120908A (ja) | 2017-07-06 |
KR20230152792A (ko) | 2023-11-03 |
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