JP7202118B2 - 表示装置及びアレイ基板 - Google Patents
表示装置及びアレイ基板 Download PDFInfo
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- JP7202118B2 JP7202118B2 JP2018179815A JP2018179815A JP7202118B2 JP 7202118 B2 JP7202118 B2 JP 7202118B2 JP 2018179815 A JP2018179815 A JP 2018179815A JP 2018179815 A JP2018179815 A JP 2018179815A JP 7202118 B2 JP7202118 B2 JP 7202118B2
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- 229910021389 graphene Inorganic materials 0.000 description 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
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- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- 239000010937 tungsten Substances 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Description
図1は、実施形態に係る表示装置を模式的に示す平面図である。図1に示すように、表示装置1は、アレイ基板2と、画素Pixと、駆動回路12と、駆動IC(Integrated Circuit)210と、カソード配線60と、を含む。アレイ基板2は、各画素Pixを駆動するための駆動回路基板であり、バックプレーン又はアクティブマトリックス基板とも呼ばれる。アレイ基板2は、基板21、複数のトランジスタ、複数の容量及び各種配線等を有する。
図8は、実施形態の第1変形例に係る発光素子を示す断面図である。表示装置1において、発光素子3はフェースアップ構造に限定されず、発光素子3の下部が、アノード電極23及びカソード電極22に接続される、いわゆるフェースダウン構造であってもよい。
図9は、実施形態の第2変形例に係る表示装置を示す断面図である。本変形例の表示装置1Aは、上述した表示装置1と比べて、第3絶縁膜93に凹部93aが設けられている点が異なる。
2 アレイ基板
3、3A 発光素子
12 駆動回路
21 基板
61、65 第1半導体層
71、71A、75、79 第2半導体層
61a 第1部分半導体層
79a 第2部分半導体層
210 駆動IC
91 第1絶縁膜
92 第2絶縁膜
93 第3絶縁膜
94 第4絶縁膜
DRT 駆動トランジスタ
BCT 出力トランジスタ
IST 初期化トランジスタ
SST 画素選択トランジスタ
RST リセットトランジスタ
PVDD アノード電源電位
PVSS カソード電源電位
L1 アノード電源線
L2 映像信号線
L3 リセット電源線
L4 初期化電源線
L5 リセット制御信号線
L6 出力制御信号線
L7 画素制御信号線
L8 初期化制御信号線
L9 接続配線
ML1 第1金属層
ML2 第2金属層
Claims (8)
- 基板と、
前記基板に設けられた複数の画素と、
複数の前記画素の各々に設けられる発光素子及び複数のトランジスタと、
前記画素に信号を供給する信号線と、
前記基板に垂直な方向で異なる層に設けられ、少なくとも一部が平面視で重なる第1半導体層及び第2半導体層と、
前記第1半導体層の一部と重なる領域に設けられた第1ゲート電極と、
前記第1ゲート電極と前記第1半導体層との間に設けられた第1絶縁膜と、
前記第1半導体層と前記第2半導体層との間に設けられた第2絶縁膜と、を有し、
複数の前記トランジスタは、第1トランジスタと、第2トランジスタと、を含み、
前記第1トランジスタは、前記第1半導体層を有し、前記発光素子に電流を供給し、
前記第2トランジスタは、前記第2半導体層を有し、前記第1トランジスタに接続され、
前記第2トランジスタの前記第2半導体層は、前記第1トランジスタの前記第1ゲート電極の一部と重なり、
前記第1トランジスタのゲート及び前記第2トランジスタのドレインとの間で形成される容量は、前記第2トランジスタの前記第2半導体層と前記第1トランジスタの前記第1ゲート電極との間に形成される第1層間容量と、前記第1トランジスタの前記第1ゲート電極と前記第1半導体層との間に形成される第2層間容量と、を含む
表示装置。 - 前記第1トランジスタは、前記第1半導体層と重なる1つの前記第1ゲート電極を有し、
前記第2トランジスタは、前記第2半導体層と重なる2つの第2ゲート電極を有する
請求項1に記載の表示装置。 - 前記第1半導体層と前記第1ゲート電極との間に形成される前記第2層間容量の単位面積当たりの容量は、前記第2半導体層と前記第1ゲート電極との間に形成される前記第1層間容量の単位面積当たりの容量よりも大きい
請求項1又は請求項2に記載の表示装置。 - 前記第2トランジスタの前記第2ゲート電極に接続されるゲート線を有し、
前記信号線のシート抵抗値は、前記ゲート線のシート抵抗値よりも小さい
請求項2に記載の表示装置。 - 前記基板に垂直な方向で、前記第2半導体層と前記信号線との層間に設けられた第3絶縁膜と、
前記信号線の上に設けられた第4絶縁膜と、を有し、
前記第1絶縁膜、前記第2絶縁膜及び前記第3絶縁膜の比誘電率は、前記第4絶縁膜の比誘電率よりも大きい
請求項1から請求項4のいずれか1項に記載の表示装置。 - 前記画素に駆動電位を供給する電源線を有し、
前記電源線のシート抵抗値は、前記信号線のシート抵抗値以下である
請求項1から請求項4のいずれか1項に記載の表示装置。 - 前記基板に垂直な方向で、前記第2半導体層と前記信号線との層間に設けられた第3絶縁膜を有し、
前記第1絶縁膜、前記第2絶縁膜及び前記第3絶縁膜は、前記電源線と重なる第1部分と、前記電源線と重ならない第2部分とを含み、
前記第1絶縁膜、前記第2絶縁膜及び前記第3絶縁膜の、前記第1部分の厚さは、前記第2部分の厚さよりも薄い
請求項6に記載の表示装置。 - 基板と、
前記基板に設けられた第1トランジスタと第2トランジスタと、
前記基板に垂直な方向で異なる層に設けられ、少なくとも一部が平面視で重なる第1半導体層及び第2半導体層と、
前記第1半導体層及び前記第2半導体層のそれぞれの一部と重なる領域に設けられた第1ゲート電極と、
前記第1半導体層に重ならず前記第2半導体層の一部と重なる領域に設けられた第2ゲート電極と、
前記第1ゲート電極と前記第1半導体層との間に設けられた第1絶縁膜と、
前記第1半導体層と前記第2半導体層との間に設けられた第2絶縁膜と、を有し、
前記第1トランジスタは、前記第1半導体層と、前記第1ゲート電極と、を含み、
前記第2トランジスタは、前記第2半導体層と、前記第2ゲート電極と、を含み、
前記第2トランジスタのドレインは、前記第1トランジスタのドレインに接続され、
前記第1トランジスタのゲート及び前記第2トランジスタのドレインとの間で形成される容量は、前記第2トランジスタの前記第2半導体層と前記第1トランジスタの前記第1ゲート電極との間に形成される第1層間容量と、前記第1トランジスタの前記第1ゲート電極と前記第1半導体層との間に形成される第2層間容量と、を含む
アレイ基板。
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