JP6866066B2 - 装置の作製方法 - Google Patents

装置の作製方法 Download PDF

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Publication number
JP6866066B2
JP6866066B2 JP2016018620A JP2016018620A JP6866066B2 JP 6866066 B2 JP6866066 B2 JP 6866066B2 JP 2016018620 A JP2016018620 A JP 2016018620A JP 2016018620 A JP2016018620 A JP 2016018620A JP 6866066 B2 JP6866066 B2 JP 6866066B2
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insulating film
conductive layer
transistor
semiconductor
layer
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JP2016174144A5 (enExample
JP2016174144A (ja
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宮入　秀和
秀和 宮入
森若　智昭
智昭 森若
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2016018620A 2015-02-06 2016-02-03 装置の作製方法 Active JP6866066B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015022396 2015-02-06
JP2015022396 2015-02-06
JP2015053431 2015-03-17
JP2015053431 2015-03-17

Publications (3)

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JP2016174144A JP2016174144A (ja) 2016-09-29
JP2016174144A5 JP2016174144A5 (enExample) 2019-03-14
JP6866066B2 true JP6866066B2 (ja) 2021-04-28

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US (3) US9728559B2 (enExample)
JP (1) JP6866066B2 (enExample)
TW (2) TWI732383B (enExample)
WO (1) WO2016125044A1 (enExample)

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CN110911382B (zh) * 2018-09-14 2021-06-25 群创光电股份有限公司 天线装置
JP7374918B2 (ja) 2018-10-12 2023-11-07 株式会社半導体エネルギー研究所 半導体装置
JP7603382B2 (ja) * 2019-11-18 2024-12-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像素子の製造方法
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