JP6563657B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6563657B2 JP6563657B2 JP2015013436A JP2015013436A JP6563657B2 JP 6563657 B2 JP6563657 B2 JP 6563657B2 JP 2015013436 A JP2015013436 A JP 2015013436A JP 2015013436 A JP2015013436 A JP 2015013436A JP 6563657 B2 JP6563657 B2 JP 6563657B2
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- transistor
- semiconductor
- oxide semiconductor
- insulator
- channel
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- 239000001257 hydrogen Substances 0.000 description 27
- 239000000758 substrate Substances 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
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- 239000010703 silicon Substances 0.000 description 26
- 125000004429 atom Chemical group 0.000 description 25
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
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- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本実施の形態では、本発明の一態様の半導体装置について図面を用いて説明する。
本実施の形態では、本発明の一態様である図6に示すトランジスタ490の作製方法について説明する。図6(A)は、トランジスタ490の構成の一例を示す平面図である。図6(B)には、図6(A)の一点鎖線E1−E2方向の断面図、および一点鎖線E3−E4方向の断面図を示す。
本実施の形態では、本発明の一態様であるトランジスタに使用することができる酸化物半導体について説明する。
本実施の形態では、本発明の一態様のトランジスタを利用した回路の一例について図面を参照して説明する。
図10(A)に本発明の一態様の半導体装置の断面図を示す。図10(A)に示す半導体装置は、下部に第1の半導体材料を用いたトランジスタ2200を有し、上部に第2の半導体材料を用いたトランジスタ2100を有している。図10(A)では、第2の半導体材料を用いたトランジスタ2100として、先の実施の形態で例示したトランジスタを適用した例を示している。なお、一点鎖線より左側がトランジスタのチャネル長方向の断面、右側がチャネル幅方向の断面である。
上記構成において、トランジスタ2100やトランジスタ2200の電極を適宜接続することにより、様々な回路を構成することができる。以下では、本発明の一態様の半導体装置を用いることにより実現できる回路構成の例を説明する。
図10(B)に示す回路図は、pチャネル型のトランジスタ2200とnチャネル型のトランジスタ2100を直列に接続し、且つそれぞれのゲートを接続した、いわゆるCMOSインバータの構成を示している。
また、図10(C)に示す回路図は、トランジスタ2100とトランジスタ2200のそれぞれのソースとドレインを接続した構成を示している。このような構成とすることで、いわゆるCMOSアナログスイッチとして機能させることができる。
本発明の一態様であるトランジスタを使用し、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置(記憶装置)の一例を図11に示す。
本発明の一態様に係る半導体装置の構成例を、図12に示す。
本発明の一態様に係る半導体装置を用いた装置の構成の一例について、図13を用いながら説明する。
本実施の形態では、本発明の一態様に係る半導体装置の使用例について説明する。
本発明の一態様に係る半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Discなどの記録媒体を再生し、その画像を表示しうる表示装置を有する装置)に用いることができる。その他に、本発明の一態様に係る半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラなどのカメラ、ゴーグル型表示装置(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤーなど)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図15に示す。
12 光学系
14 試料室
16 光学系
18 カメラ
20 観察室
22 フィルム室
24 電子
28 物質
32 蛍光板
101 トランジスタ
102 トランジスタ
103 トランジスタ
110 基板
120 絶縁体
130 酸化物半導体
131 酸化物半導体
132 酸化物半導体
133 酸化物半導体
140 ソース電極
150 ドレイン電極
160 ゲート絶縁体
170 ゲート電極
172 導電体
180 絶縁体
185 絶縁体
191 領域
192 領域
200 半導体装置
201 記憶回路
202 記憶回路
203 記憶回路
204 回路
209 トランジスタ
210 トランジスタ
212 トランジスタ
213 トランジスタ
215 トランジスタ
217 トランジスタ
218 トランジスタ
219 容量素子
220 容量素子
240 配線
241 配線
242 配線
243 配線
244 配線
300 半導体装置
301 CPUコア
302 パワーコントローラ
303 パワースイッチ
304 キャッシュ
305 バスインターフェース
306 デバッグインターフェース
307 制御装置
308 PC
309 パイプラインレジスタ
310 パイプラインレジスタ
311 ALU
312 レジスタファイル
321 パワーマネージメントユニット
322 周辺回路
323 データバス
402 絶縁体
404 導電体
406a 半導体
406b 半導体
406c 半導体
408 絶縁体
412 絶縁体
413 導電体
416 導電体
416a 導電体
416b 導電体
417 導電体
418 絶縁体
426 マスク
436a 半導体
436b 半導体
442 絶縁体
490 トランジスタ
750 インターポーザ
751 チップ
752 端子
753 モールド樹脂
800 パネル
801 プリント配線基板
802 パッケージ
803 FPC
804 バッテリー
901 筐体
902 筐体
903 表示部
904 表示部
905 マイクロフォン
906 スピーカー
907 操作キー
908 スタイラス
911 筐体
912 筐体
913 表示部
914 表示部
915 接続部
916 操作キー
921 筐体
922 表示部
923 キーボード
924 ポインティングデバイス
931 筐体
932 冷蔵室用扉
933 冷凍室用扉
941 筐体
942 筐体
943 表示部
944 操作キー
945 レンズ
946 接続部
951 車体
952 車輪
953 ダッシュボード
954 ライト
2100 トランジスタ
2200 トランジスタ
2201 絶縁体
2202 配線
2203 プラグ
2204 絶縁体
2205 配線
2206 配線
2207 絶縁体
2208 ブロック膜
2211 半導体基板
2212 絶縁体
2213 ゲート電極
2214 ゲート絶縁体
2215 ソース領域およびドレイン領域
3001 配線
3002 配線
3003 配線
3004 配線
3005 配線
3200 トランジスタ
3300 トランジスタ
3400 容量素子
Claims (4)
- 上面に凸部を有する絶縁体を有し、
酸化物半導体と、ゲート電極と、ゲート絶縁体と、ソース電極と、ドレイン電極と、を有するトランジスタを有し、
前記酸化物半導体は、前記凸部上に設けられ、
前記酸化物半導体は、前記ゲート絶縁体を介して前記ゲート電極と重なる第1の領域を有し、
前記ゲート電極は、前記ソース電極と重なる第2の領域と、前記ドレイン電極と重なる第3の領域とを有し、
前記トランジスタのチャネル幅方向において、前記ゲート電極は、前記ゲート絶縁体を介して前記酸化物半導体の側面と面する第4の領域と、前記ゲート絶縁体を介して前記凸部と面する第5の領域とを有し、
前記トランジスタのチャネル長方向において、前記第2の領域及び前記第3の領域の各々の長さは、3nm以上300nm以下であり、
前記トランジスタは、しきい値電圧が0Vより大きく、かつスイッチ速度が100ナノ秒未満である、半導体装置。 - 請求項1において、
前記トランジスタは、前記ゲート電極に前記しきい値電圧以上の電圧を印加したとき、前記酸化物半導体の全体に電流が流れる、半導体装置。 - 請求項1又は2において、
前記第1の領域のキャリア密度は、1×1015cm−3未満である、半導体装置。 - 請求項1乃至3のいずれか一において、
前記トランジスタのチャネル幅方向において、前記酸化物半導体は、前記ゲート絶縁体を介して前記酸化物半導体の側面と、前記ゲート電極と、が面する第6の領域を有する、半導体装置。
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TW201624708A (zh) | 2014-11-21 | 2016-07-01 | 半導體能源研究所股份有限公司 | 半導體裝置及記憶體裝置 |
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