JP6523695B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6523695B2
JP6523695B2 JP2015019214A JP2015019214A JP6523695B2 JP 6523695 B2 JP6523695 B2 JP 6523695B2 JP 2015019214 A JP2015019214 A JP 2015019214A JP 2015019214 A JP2015019214 A JP 2015019214A JP 6523695 B2 JP6523695 B2 JP 6523695B2
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Prior art keywords
film
transistor
insulating film
oxide semiconductor
region
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Japanese (ja)
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JP2015181150A (ja
JP2015181150A5 (ja
Inventor
山崎　舜平
舜平 山崎
岡崎　健一
健一 岡崎
中田　昌孝
昌孝 中田
片山　雅博
雅博 片山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2015181150A5 publication Critical patent/JP2015181150A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Chemical Vapour Deposition (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Formation Of Insulating Films (AREA)
JP2015019214A 2014-02-05 2015-02-03 半導体装置 Active JP6523695B2 (ja)

Priority Applications (1)

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Applications Claiming Priority (5)

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JP2014020620 2014-02-05
JP2014020620 2014-02-05
JP2014043637 2014-03-06
JP2014043637 2014-03-06
JP2015019214A JP6523695B2 (ja) 2014-02-05 2015-02-03 半導体装置

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JP2015181150A JP2015181150A (ja) 2015-10-15
JP2015181150A5 JP2015181150A5 (ja) 2018-03-08
JP6523695B2 true JP6523695B2 (ja) 2019-06-05

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JP2015019214A Active JP6523695B2 (ja) 2014-02-05 2015-02-03 半導体装置
JP2018236258A Active JP6665270B2 (ja) 2014-02-05 2018-12-18 半導体装置
JP2019229075A Withdrawn JP2020057808A (ja) 2014-02-05 2019-12-19 半導体装置
JP2021125798A Active JP7194787B2 (ja) 2014-02-05 2021-07-30 トランジスタ
JP2021126372A Active JP7194788B2 (ja) 2014-02-05 2021-08-02 半導体装置
JP2022197950A Active JP7393112B2 (ja) 2014-02-05 2022-12-12 トランジスタ
JP2023198715A Active JP7476416B2 (ja) 2014-02-05 2023-11-23 トランジスタ
JP2024066532A Active JP7628208B2 (ja) 2014-02-05 2024-04-17 トランジスタ
JP2025011924A Active JP7772977B2 (ja) 2014-02-05 2025-01-28 半導体装置
JP2025187372A Pending JP2026031989A (ja) 2014-02-05 2025-11-06 半導体装置

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JP2018236258A Active JP6665270B2 (ja) 2014-02-05 2018-12-18 半導体装置
JP2019229075A Withdrawn JP2020057808A (ja) 2014-02-05 2019-12-19 半導体装置
JP2021125798A Active JP7194787B2 (ja) 2014-02-05 2021-07-30 トランジスタ
JP2021126372A Active JP7194788B2 (ja) 2014-02-05 2021-08-02 半導体装置
JP2022197950A Active JP7393112B2 (ja) 2014-02-05 2022-12-12 トランジスタ
JP2023198715A Active JP7476416B2 (ja) 2014-02-05 2023-11-23 トランジスタ
JP2024066532A Active JP7628208B2 (ja) 2014-02-05 2024-04-17 トランジスタ
JP2025011924A Active JP7772977B2 (ja) 2014-02-05 2025-01-28 半導体装置
JP2025187372A Pending JP2026031989A (ja) 2014-02-05 2025-11-06 半導体装置

Country Status (2)

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US (2) US9653487B2 (https=)
JP (10) JP6523695B2 (https=)

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TWI665778B (zh) 2014-02-05 2019-07-11 日商半導體能源研究所股份有限公司 半導體裝置、模組及電子裝置
JP2015188062A (ja) 2014-02-07 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
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JP6448311B2 (ja) * 2014-10-30 2019-01-09 株式会社ジャパンディスプレイ 半導体装置
CN113793872A (zh) 2014-12-10 2021-12-14 株式会社半导体能源研究所 半导体装置及其制造方法
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WO2017113042A1 (zh) * 2015-12-31 2017-07-06 林伯刚 降低蓝光危害的装置及其方法
JP2017126014A (ja) * 2016-01-15 2017-07-20 株式会社ジャパンディスプレイ 表示装置
KR102859159B1 (ko) * 2016-02-18 2025-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이의 제작 방법, 표시 장치, 및 전자 기기
KR102623624B1 (ko) * 2016-05-18 2024-01-10 삼성디스플레이 주식회사 트랜지스터 표시판 및 그 제조 방법
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KR102468866B1 (ko) * 2017-08-22 2022-11-18 엘지디스플레이 주식회사 보호금속-게이트 기반 캐패시터를 포함하는 표시패널 및 이를 제조하는 방법
JP6853770B2 (ja) * 2017-11-30 2021-03-31 株式会社Ｊｏｌｅｄ 半導体装置および表示装置
WO2019171505A1 (ja) * 2018-03-07 2019-09-12 シャープ株式会社 薄膜トランジスタおよびその製造方法並びに表示装置
KR20200127993A (ko) 2018-03-07 2020-11-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
WO2019207411A1 (ja) * 2018-04-27 2019-10-31 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN119092554A (zh) 2018-10-10 2024-12-06 株式会社半导体能源研究所 半导体装置
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CN115206994A (zh) * 2021-04-09 2022-10-18 株式会社日本显示器 显示装置
JP7671625B2 (ja) * 2021-05-19 2025-05-02 株式会社ジャパンディスプレイ 半導体装置およびその製造方法
WO2023189550A1 (ja) * 2022-03-30 2023-10-05 株式会社ジャパンディスプレイ 半導体装置
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WO2024142278A1 (ja) * 2022-12-27 2024-07-04 シャープディスプレイテクノロジー株式会社 表示装置
WO2025116562A1 (ko) * 2023-11-29 2025-06-05 삼성디스플레이 주식회사 표시 장치 및 이를 포함하는 전자 장치
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