JP6516957B2 - エピタキシャルウェーハの製造方法及び貼り合わせウェーハの製造方法 - Google Patents
エピタキシャルウェーハの製造方法及び貼り合わせウェーハの製造方法 Download PDFInfo
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- JP6516957B2 JP6516957B2 JP2013183149A JP2013183149A JP6516957B2 JP 6516957 B2 JP6516957 B2 JP 6516957B2 JP 2013183149 A JP2013183149 A JP 2013183149A JP 2013183149 A JP2013183149 A JP 2013183149A JP 6516957 B2 JP6516957 B2 JP 6516957B2
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- wafer
- silicon wafer
- epitaxial
- hydrogen
- gettering
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- 238000004519 manufacturing process Methods 0.000 title claims description 41
- 229910052710 silicon Inorganic materials 0.000 claims description 197
- 239000010703 silicon Substances 0.000 claims description 197
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 184
- 238000005247 gettering Methods 0.000 claims description 124
- 239000001257 hydrogen Substances 0.000 claims description 103
- 229910052739 hydrogen Inorganic materials 0.000 claims description 103
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 58
- 238000005468 ion implantation Methods 0.000 claims description 53
- -1 Hydrogen ions Chemical class 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 51
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 23
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 26
- 150000002500 ions Chemical class 0.000 description 26
- 229910052799 carbon Inorganic materials 0.000 description 25
- 238000011109 contamination Methods 0.000 description 25
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- 239000002184 metal Substances 0.000 description 20
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- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 14
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- 150000003376 silicon Chemical class 0.000 description 13
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 238000002513 implantation Methods 0.000 description 11
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- 230000008859 change Effects 0.000 description 8
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- 102100031920 Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Human genes 0.000 description 6
- 101000992065 Homo sapiens Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Proteins 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
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- 230000000694 effects Effects 0.000 description 4
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- 229910052759 nickel Inorganic materials 0.000 description 4
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 3
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
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- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
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- 229910052738 indium Inorganic materials 0.000 description 2
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- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 1
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- 230000004931 aggregating effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
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- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 238000005260 corrosion Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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- 238000001228 spectrum Methods 0.000 description 1
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- 230000007704 transition Effects 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3223—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering using cavities formed by hydrogen or noble gas ion implantation
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
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- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26566—Bombardment with radiation with high-energy radiation producing ion implantation of a cluster, e.g. using a gas cluster ion beam
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JP2013183149A JP6516957B2 (ja) | 2013-09-04 | 2013-09-04 | エピタキシャルウェーハの製造方法及び貼り合わせウェーハの製造方法 |
TW103129306A TWI540618B (zh) | 2013-09-04 | 2014-08-26 | Silicon wafer and its manufacturing method |
KR20140116106A KR20150027711A (ko) | 2013-09-04 | 2014-09-02 | 실리콘 웨이퍼 및 그의 제조 방법 |
CN202010073976.7A CN111508819A (zh) | 2013-09-04 | 2014-09-02 | 硅晶片及其制造方法 |
CN201480046679.6A CN105659367A (zh) | 2013-09-04 | 2014-09-02 | 硅晶片及其制造方法 |
PCT/JP2014/073596 WO2015034075A1 (ja) | 2013-09-04 | 2014-09-02 | シリコンウェーハおよびその製造方法 |
KR1020160025307A KR20160030915A (ko) | 2013-09-04 | 2016-03-02 | 실리콘 웨이퍼 및 그의 제조 방법 |
KR1020170080693A KR102082191B1 (ko) | 2013-09-04 | 2017-06-26 | 에피택셜 웨이퍼, 접합 웨이퍼 및 이들의 제조 방법 |
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KR (3) | KR20150027711A (zh) |
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JP6539959B2 (ja) * | 2014-08-28 | 2019-07-10 | 株式会社Sumco | エピタキシャルシリコンウェーハおよびその製造方法、ならびに、固体撮像素子の製造方法 |
JP6485315B2 (ja) * | 2015-10-15 | 2019-03-20 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法 |
CN105742243A (zh) * | 2016-02-26 | 2016-07-06 | 上海华力微电子有限公司 | 三维集成电路切割方法以及三维集成电路结构 |
JP6504082B2 (ja) * | 2016-02-29 | 2019-04-24 | 株式会社Sumco | 半導体エピタキシャルウェーハおよびその製造方法ならびに固体撮像素子の製造方法 |
JP6485406B2 (ja) * | 2016-05-31 | 2019-03-20 | 株式会社Sumco | Soiウェーハの製造方法 |
JP6792412B2 (ja) * | 2016-10-28 | 2020-11-25 | 太平洋セメント株式会社 | 炭化珪素粉末の製造方法 |
JP6772966B2 (ja) * | 2017-06-14 | 2020-10-21 | 株式会社Sumco | エピタキシャル成長用の半導体ウェーハの製造方法及び半導体エピタキシャルウェーハの製造方法 |
JP6787268B2 (ja) * | 2017-07-20 | 2020-11-18 | 株式会社Sumco | 半導体エピタキシャルウェーハおよびその製造方法、ならびに固体撮像素子の製造方法 |
CN108032451B (zh) * | 2017-12-07 | 2020-07-10 | 苏州阿特斯阳光电力科技有限公司 | 一种硅棒切割方法 |
JP6812962B2 (ja) | 2017-12-26 | 2021-01-13 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
JP6451881B1 (ja) * | 2018-01-24 | 2019-01-16 | 株式会社Sumco | シリコン層の評価方法およびシリコンエピタキシャルウェーハの製造方法 |
FR3077924B1 (fr) | 2018-02-13 | 2020-01-17 | Soitec | Structure demontable et procede de demontage utilisant ladite structure |
CN109559982A (zh) * | 2018-10-23 | 2019-04-02 | 开封大学 | 一种n型晶体硅太阳电池的硼扩散工艺 |
TWI727515B (zh) * | 2018-11-30 | 2021-05-11 | 台灣積體電路製造股份有限公司 | 形成soi結構的方法 |
JP6680378B2 (ja) * | 2019-03-13 | 2020-04-15 | 株式会社Sumco | Soiウェーハ |
JP7262415B2 (ja) * | 2020-04-03 | 2023-04-21 | 信越化学工業株式会社 | 複合基板およびその製造方法 |
CN111785729B (zh) * | 2020-06-11 | 2021-10-26 | 长江存储科技有限责任公司 | 一种三维存储器的制作方法 |
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JPS5618430A (en) * | 1979-07-25 | 1981-02-21 | Fujitsu Ltd | Manufacture of semiconductor element |
JPS63271942A (ja) * | 1987-04-28 | 1988-11-09 | Matsushita Electric Ind Co Ltd | シリコン表面の欠陥低減方法 |
JPH0661234A (ja) * | 1992-08-06 | 1994-03-04 | Hitachi Ltd | 半導体装置の製造方法 |
JP3384506B2 (ja) * | 1993-03-30 | 2003-03-10 | ソニー株式会社 | 半導体基板の製造方法 |
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JPH1167682A (ja) * | 1997-08-08 | 1999-03-09 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP4599724B2 (ja) * | 2001-02-15 | 2010-12-15 | 信越半導体株式会社 | エピタキシャルシリコンウエーハの製造方法およびエピタキシャルシリコンウエーハ |
JP2003163216A (ja) * | 2001-09-12 | 2003-06-06 | Wacker Nsce Corp | エピタキシャルシリコンウエハおよびその製造方法 |
JP2004282093A (ja) * | 2004-05-17 | 2004-10-07 | Yamaha Corp | 半導体ウエハの欠陥低減法 |
WO2006032948A1 (en) * | 2004-09-21 | 2006-03-30 | S.O.I.Tec Silicon On Insulator Technologies | Method for obtaining a thin layer by implementing co-implantation and subsequent implantation |
JP4910275B2 (ja) * | 2004-09-21 | 2012-04-04 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
EP2012347B1 (en) * | 2006-04-24 | 2015-03-18 | Shin-Etsu Handotai Co., Ltd. | Method for producing soi wafer |
JP2010010578A (ja) * | 2008-06-30 | 2010-01-14 | Canon Inc | 半導体装置及びその製造方法 |
JP2010114409A (ja) * | 2008-10-10 | 2010-05-20 | Sony Corp | Soi基板とその製造方法、固体撮像装置とその製造方法、および撮像装置 |
JP5391651B2 (ja) * | 2008-10-30 | 2014-01-15 | 信越半導体株式会社 | 半導体基板の製造方法 |
JP2010283022A (ja) * | 2009-06-02 | 2010-12-16 | Sumco Corp | シリコンウェーハおよびその製造方法 |
JP2010283296A (ja) * | 2009-06-08 | 2010-12-16 | Sumco Corp | シリコンウェーハ及びその製造方法、並びに、半導体デバイスの製造方法 |
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CN111508819A (zh) | 2020-08-07 |
KR20170077099A (ko) | 2017-07-05 |
CN105659367A (zh) | 2016-06-08 |
KR20150027711A (ko) | 2015-03-12 |
TWI540618B (zh) | 2016-07-01 |
WO2015034075A1 (ja) | 2015-03-12 |
TW201515069A (zh) | 2015-04-16 |
KR20160030915A (ko) | 2016-03-21 |
KR102082191B1 (ko) | 2020-02-27 |
JP2015050425A (ja) | 2015-03-16 |
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