KR20150027711A - 실리콘 웨이퍼 및 그의 제조 방법 - Google Patents

실리콘 웨이퍼 및 그의 제조 방법 Download PDF

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Publication number
KR20150027711A
KR20150027711A KR20140116106A KR20140116106A KR20150027711A KR 20150027711 A KR20150027711 A KR 20150027711A KR 20140116106 A KR20140116106 A KR 20140116106A KR 20140116106 A KR20140116106 A KR 20140116106A KR 20150027711 A KR20150027711 A KR 20150027711A
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South Korea
Prior art keywords
wafer
silicon wafer
epitaxial
hydrogen
gettering
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KR20140116106A
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English (en)
Korean (ko)
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요시히로 고가
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가부시키가이샤 사무코
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Publication of KR20150027711A publication Critical patent/KR20150027711A/ko

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    • H—ELECTRICITY
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3223—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering using cavities formed by hydrogen or noble gas ion implantation
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
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    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR20140116106A 2013-09-04 2014-09-02 실리콘 웨이퍼 및 그의 제조 방법 KR20150027711A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-183149 2013-09-04
JP2013183149A JP6516957B2 (ja) 2013-09-04 2013-09-04 エピタキシャルウェーハの製造方法及び貼り合わせウェーハの製造方法

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KR20140116106A KR20150027711A (ko) 2013-09-04 2014-09-02 실리콘 웨이퍼 및 그의 제조 방법
KR1020160025307A KR20160030915A (ko) 2013-09-04 2016-03-02 실리콘 웨이퍼 및 그의 제조 방법
KR1020170080693A KR102082191B1 (ko) 2013-09-04 2017-06-26 에피택셜 웨이퍼, 접합 웨이퍼 및 이들의 제조 방법

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KR1020160025307A KR20160030915A (ko) 2013-09-04 2016-03-02 실리콘 웨이퍼 및 그의 제조 방법
KR1020170080693A KR102082191B1 (ko) 2013-09-04 2017-06-26 에피택셜 웨이퍼, 접합 웨이퍼 및 이들의 제조 방법

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JP (1) JP6516957B2 (zh)
KR (3) KR20150027711A (zh)
CN (2) CN105659367A (zh)
TW (1) TWI540618B (zh)
WO (1) WO2015034075A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
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CN109559982A (zh) * 2018-10-23 2019-04-02 开封大学 一种n型晶体硅太阳电池的硼扩散工艺
KR20200095561A (ko) * 2018-01-24 2020-08-10 가부시키가이샤 사무코 실리콘층의 평가 방법 및 실리콘 에피택셜 웨이퍼의 제조 방법

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JP6539959B2 (ja) * 2014-08-28 2019-07-10 株式会社Sumco エピタキシャルシリコンウェーハおよびその製造方法、ならびに、固体撮像素子の製造方法
JP6485315B2 (ja) * 2015-10-15 2019-03-20 株式会社Sumco 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法
CN105742243A (zh) * 2016-02-26 2016-07-06 上海华力微电子有限公司 三维集成电路切割方法以及三维集成电路结构
JP6504082B2 (ja) * 2016-02-29 2019-04-24 株式会社Sumco 半導体エピタキシャルウェーハおよびその製造方法ならびに固体撮像素子の製造方法
JP6485406B2 (ja) * 2016-05-31 2019-03-20 株式会社Sumco Ｓｏｉウェーハの製造方法
JP6792412B2 (ja) * 2016-10-28 2020-11-25 太平洋セメント株式会社 炭化珪素粉末の製造方法
JP6772966B2 (ja) * 2017-06-14 2020-10-21 株式会社Sumco エピタキシャル成長用の半導体ウェーハの製造方法及び半導体エピタキシャルウェーハの製造方法
JP6787268B2 (ja) * 2017-07-20 2020-11-18 株式会社Sumco 半導体エピタキシャルウェーハおよびその製造方法、ならびに固体撮像素子の製造方法
CN108032451B (zh) * 2017-12-07 2020-07-10 苏州阿特斯阳光电力科技有限公司 一种硅棒切割方法
JP6812962B2 (ja) 2017-12-26 2021-01-13 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
FR3077924B1 (fr) 2018-02-13 2020-01-17 Soitec Structure demontable et procede de demontage utilisant ladite structure
TWI727515B (zh) * 2018-11-30 2021-05-11 台灣積體電路製造股份有限公司 形成soi結構的方法
JP6680378B2 (ja) * 2019-03-13 2020-04-15 株式会社Sumco Ｓｏｉウェーハ
JP7262415B2 (ja) * 2020-04-03 2023-04-21 信越化学工業株式会社 複合基板およびその製造方法
CN111785729B (zh) * 2020-06-11 2021-10-26 长江存储科技有限责任公司 一种三维存储器的制作方法

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WO2015034075A1 (ja) 2015-03-12
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