JP6439005B2 - 重合化学蒸着を使用して平坦化層を堆積させる方法 - Google Patents
重合化学蒸着を使用して平坦化層を堆積させる方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 52
- 238000006116 polymerization reaction Methods 0.000 title description 28
- 238000000151 deposition Methods 0.000 title description 8
- 238000005229 chemical vapour deposition Methods 0.000 title description 7
- 239000002243 precursor Substances 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 63
- 229920000642 polymer Polymers 0.000 claims description 29
- 230000005855 radiation Effects 0.000 claims description 26
- 239000000178 monomer Substances 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 17
- 239000003999 initiator Substances 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 238000001179 sorption measurement Methods 0.000 claims description 7
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 5
- 239000000539 dimer Substances 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 150000002978 peroxides Chemical class 0.000 claims description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 150000002430 hydrocarbons Chemical group 0.000 claims description 3
- 150000002894 organic compounds Chemical class 0.000 claims description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 2
- 150000001263 acyl chlorides Chemical class 0.000 claims description 2
- 125000003277 amino group Chemical group 0.000 claims description 2
- 125000002843 carboxylic acid group Chemical group 0.000 claims description 2
- 150000001768 cations Chemical class 0.000 claims description 2
- 239000003431 cross linking reagent Substances 0.000 claims 2
- 230000002123 temporal effect Effects 0.000 claims 2
- 150000003254 radicals Chemical class 0.000 description 13
- OOHZIRUJZFRULE-UHFFFAOYSA-N 2,2-dimethylpropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(C)(C)C OOHZIRUJZFRULE-UHFFFAOYSA-N 0.000 description 11
- 239000012071 phase Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000012808 vapor phase Substances 0.000 description 6
- 229920006254 polymer film Polymers 0.000 description 5
- 238000007156 chain growth polymerization reaction Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 150000001336 alkenes Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010526 radical polymerization reaction Methods 0.000 description 3
- 238000007155 step growth polymerization reaction Methods 0.000 description 3
- 230000001960 triggered effect Effects 0.000 description 3
- 239000004971 Cross linker Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- QRSFFHRCBYCWBS-UHFFFAOYSA-N [O].[O] Chemical compound [O].[O] QRSFFHRCBYCWBS-UHFFFAOYSA-N 0.000 description 1
- -1 acyclic alkene Chemical class 0.000 description 1
- 150000001334 alicyclic compounds Chemical class 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000006471 dimerization reaction Methods 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002044 microwave spectrum Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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Description
本出願は、2016年5月8日に出願された米国仮特許出願第60/333,262号に関係し、優先権を主張する。その全内容は参照により本明細書に組み込まれる。
本発明は、重合化学蒸着を用いて平坦化層を堆積させる方法に関する。この方法は、複数のフィーチャ(features)の間にギャップを有する複数のフィーチャを含む基板のトポグラフィ平坦化に使用することができる。
複数のフィーチャを含み、前記複数のフィーチャの間にギャップを有する基板を提供するステップと、
前記基板への気相暴露によって前駆体分子を送達するステップと、
前記基板上に前記前駆体分子を吸着させるステップであって、前記吸着された前駆体分子の層で、前記ギャップを少なくとも実質的に充填する(fill)ステップと、
前記前駆体分子を反応させるステップであって、前記ギャップを少なくとも実質的に充填するポリマー層を形成するステップと、
を含む。
重合化学蒸着を用いて基板上のフィーチャ上に平坦化層を堆積させる方法は、複数の実施形態に記載されている。
102、104、106、108 ステップ
200、400 基板
210、220,410,420 フィーチャ
212、222、412、422 ギャップ
230 吸着された前駆体の層
240、440 前駆体分子
250 フリーラジカル
260 ポリマー層
460 開始剤分子
470 完全に重合された層
Claims (19)
- 基板を処理する方法であって、
複数のフィーチャを含み、前記複数のフィーチャの間にギャップを有する基板を提供するステップと、
前記基板への気相暴露によって前駆体分子を送達するステップと、
前記基板上に前記前駆体分子を吸着させるステップであって、前記吸着された前駆体分子の層で、前記ギャップを少なくとも実質的に充填するステップと、
前記前駆体分子を反応させるステップであって、前記ギャップを少なくとも実質的に充填するポリマー層を形成するステップと、
前記吸着された前駆体分子の前記層の上面から前記吸着された前駆体分子の前記層の底面まで、前記吸着された前駆体分子の前記層の厚さにわたって垂直温度勾配を発生させるステップと、
を含む、方法。 - 前記ポリマー層が前記ギャップをオーバーフィルする、請求項1に記載の方法。
- 前記吸着ステップおよび反応ステップが少なくとも部分的な時間的重複を有する、請求項1に記載の方法。
- 前記吸着ステップおよび反応ステップが部分的な時間的重複を有しない、請求項1に記載の方法。
- 前記複数のフィーチャは、前記基板上の第1および第2の領域を形成し、且つ、前記第1の領域における前記複数のフィーチャは、前記第2の領域よりも前記複数のフィーチャよりも広いギャップを有する、請求項1に記載の方法。
- 前記ポリマー層が前記ギャップをオーバーフィルする請求項5に記載の方法であって、当該方法は前記ポリマー層を平坦化することをさらに含む、方法。
- 前記前駆体分子がアクリレートを含む、請求項1に記載の方法。
- 前記前駆体分子が、重合可能である有機化合物のモノマー、ダイマーまたはオリゴマーを含む、請求項1に記載の方法。
- 前記前駆体分子が、ビニル官能基(−C=C−)または炭素−炭素三重結合(−C≡C−)を含む、請求項1に記載の方法。
- 前記前駆体分子が、2つ以上の異なる反応性分子を含む、請求項1に記載の方法。
- 1つの前駆体分子がヒドロキシル基(−OH)を含み、且つ、別の前駆体分子がアミン基(−NH2)を含む、請求項10に記載の方法。
- 1つの前駆体分子がヒドロキシル基(−OH)を含み、且つ、別の前駆体分子がカルボン酸基(−COOH)または塩化アシル(−COCl)を含む、請求項10に記載の方法。
- 前記反応ステップが、気体環境中で前記基板を熱処理することによって行われる、請求項1に記載の方法。
- 前記反応ステップが、前記基板を電磁(EM)放射線に暴露することによって行われる、請求項1に記載の方法。
- 前記反応ステップが、開始剤分子から形成されるフリーラジカルを含む、請求項1に記載の方法。
- 前記開始剤分子が過酸化物を含む、請求項15に記載の方法。
- 前記過酸化物が過酸化水素(H−O−O−H)、R−O−O−H、R−O−O−R’およびR−CO−O−O−Hからなる群から選択され、ここで、RおよびR’は炭化水素部分である、請求項16に記載の方法。
- 前記反応させるステップは、前記吸着された前駆体分子の前記層を、プラズマ中で生成される陽イオンおよびフリーラジカルに暴露するステップを含む、請求項1に記載の方法。
- 請求項1に記載の方法であって、
前記吸着された前駆体分子の前記層に、架橋剤分子を送達するステップステップであって、前記架橋剤分子は少なくとも2つの反応部位を含むステップ、
をさらに含む、方法。
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