JP2017201060A - 重合化学蒸着を使用して平坦化層を堆積させる方法 - Google Patents
重合化学蒸着を使用して平坦化層を堆積させる方法 Download PDFInfo
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Abstract
Description
本出願は、2016年5月8日に出願された米国仮特許出願第60/333,262号に関係し、優先権を主張する。その全内容は参照により本明細書に組み込まれる。
本発明は、重合化学蒸着を用いて平坦化層を堆積させる方法に関する。この方法は、複数のフィーチャ(features)の間にギャップを有する複数のフィーチャを含む基板のトポグラフィ平坦化に使用することができる。
複数のフィーチャを含み、前記複数のフィーチャの間にギャップを有する基板を提供するステップと、
前記基板への気相暴露によって前駆体分子を送達するステップと、
前記基板上に前記前駆体分子を吸着させるステップであって、前記吸着された前駆体分子の層で、前記ギャップを少なくとも実質的に充填する(fill)ステップと、
前記前駆体分子を反応させるステップであって、前記ギャップを少なくとも実質的に充填するポリマー層を形成するステップと、
を含む。
重合化学蒸着を用いて基板上のフィーチャ上に平坦化層を堆積させる方法は、複数の実施形態に記載されている。
102、104、106、108 ステップ
200、400 基板
210、220,410,420 フィーチャ
212、222、412、422 ギャップ
230 吸着された前駆体の層
240、440 前駆体分子
250 フリーラジカル
260 ポリマー層
460 開始剤分子
470 完全に重合された層
Claims (20)
- 基板を処理する方法であって、
複数のフィーチャを含み、前記複数のフィーチャの間にギャップを有する基板を提供するステップと、
前記基板への気相暴露によって前駆体分子を送達するステップと、
前記基板上に前記前駆体分子を吸着させるステップであって、前記吸着された前駆体分子の層で、前記ギャップを少なくとも実質的に充填するステップと、
前記前駆体分子を反応させるステップであって、前記ギャップを少なくとも実質的に充填するポリマー層を形成するステップと、
を含む、方法。 - 前記ポリマー層が前記ギャップをオーバーフィルする、請求項1に記載の方法。
- 前記吸着ステップおよび反応ステップが少なくとも部分的な時間的重複を有する、請求項1に記載の方法。
- 前記吸着ステップおよび反応ステップが部分的な時間的重複を有しない、請求項1に記載の方法。
- 前記複数のフィーチャは、前記基板上の第1および第2の領域を形成し、且つ、前記第1の領域における前記複数のフィーチャは、前記第2の領域よりも前記複数のフィーチャよりも広いギャップを有する、請求項1に記載の方法。
- 前記ポリマー層が前記ギャップをオーバーフィルする請求項5に記載の方法であって、当該方法は前記ポリマー層を平坦化することをさらに含む、方法。
- 前記前駆体分子がアクリレートを含む、請求項1に記載の方法。
- 前記前駆体分子が、重合可能である有機化合物のモノマー、ダイマーまたはオリゴマーを含む、請求項1に記載の方法。
- 前記前駆体分子が、ビニル官能基(−C=C−)または炭素−炭素三重結合(−C≡C−)を含む、請求項1に記載の方法。
- 前記前駆体分子が、2つ以上の異なる反応性分子を含む、請求項1に記載の方法。
- 1つの前駆体分子がヒドロキシル基(−OH)を含み、且つ、別の前駆体分子がアミン基(−NH2)を含む、請求項10に記載の方法。
- 1つの前駆体分子がヒドロキシル基(−OH)を含み、且つ、別の前駆体分子がカルボン酸基(−COOH)または塩化アシル(−COCl)を含む、請求項10に記載の方法。
- 前記反応ステップが、気体環境中で前記基板を熱処理することによって行われる、請求項1に記載の方法。
- 前記反応ステップが、前記基板を電磁(EM)放射線に曝すことによって行われる、請求項1に記載の方法。
- 前記反応ステップが、開始剤分子から形成されるフリーラジカルを含む、請求項1に記載の方法。
- 前記開始剤分子が過酸化物を含む、請求項15に記載の方法。
- 前記過酸化物が過酸化水素(H−O−O−H)、R−O−O−H、R−O−O−R’およびR−CO−O−O−Hからなる群から選択され、ここで、RおよびR’は炭化水素部分である、請求項16に記載の方法。
- 前記反応させるステップは、前記吸着された前駆体分子の前記層を、プラズマ中で生成される陽イオンおよびフリーラジカルに暴露するステップを含む、請求項1に記載の方法。
- 請求項1に記載の方法であって、
前記吸着された前駆体分子の前記層の上面から前記吸着された前駆体分子の前記層の底面まで、前記吸着された前駆体分子の前記層の厚さにわたって垂直温度勾配を発生させるステップ、をさらに含む、方法。 - 請求項1に記載の方法であって、
前記吸着された前駆体分子の前記層に、架橋剤分子を送達するステップをさらに含み、前記架橋剤分子は少なくとも2つの反応部位を含む、方法。
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