JP6367763B2 - ウェーハ乾燥装置およびウェーハ乾燥方法 - Google Patents

ウェーハ乾燥装置およびウェーハ乾燥方法 Download PDF

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Publication number
JP6367763B2
JP6367763B2 JP2015124538A JP2015124538A JP6367763B2 JP 6367763 B2 JP6367763 B2 JP 6367763B2 JP 2015124538 A JP2015124538 A JP 2015124538A JP 2015124538 A JP2015124538 A JP 2015124538A JP 6367763 B2 JP6367763 B2 JP 6367763B2
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JP
Japan
Prior art keywords
wafer
inert gas
suction nozzle
liquid suction
liquid
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Expired - Fee Related
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JP2015124538A
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English (en)
Japanese (ja)
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JP2017011083A5 (enExample
JP2017011083A (ja
Inventor
正芳 今井
正芳 今井
聡美 ▲濱▼田
聡美 ▲濱▼田
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Ebara Corp
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Ebara Corp
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Priority to JP2015124538A priority Critical patent/JP6367763B2/ja
Priority to US15/186,352 priority patent/US10229841B2/en
Priority to SG10201605035VA priority patent/SG10201605035VA/en
Priority to KR1020160077579A priority patent/KR20160150601A/ko
Publication of JP2017011083A publication Critical patent/JP2017011083A/ja
Publication of JP2017011083A5 publication Critical patent/JP2017011083A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B15/00—Machines or apparatus for drying objects with progressive movement; Machines or apparatus with progressive movement for drying batches of material in compact form
    • F26B15/10—Machines or apparatus for drying objects with progressive movement; Machines or apparatus with progressive movement for drying batches of material in compact form with movement in a path composed of one or more straight lines, e.g. compound, the movement being in alternate horizontal and vertical directions
    • F26B15/12—Machines or apparatus for drying objects with progressive movement; Machines or apparatus with progressive movement for drying batches of material in compact form with movement in a path composed of one or more straight lines, e.g. compound, the movement being in alternate horizontal and vertical directions the lines being all horizontal or slightly inclined
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00—Arrangements for supplying or controlling air or other gases for drying solid materials or objects
    • F26B21/40—Arrangements for supplying or controlling air or other gases for drying solid materials or objects using gases other than air
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00—Arrangements for supplying or controlling air or other gases for drying solid materials or objects
    • F26B21/50—Ducting arrangements from the source of air or other gases to the materials or objects being dried
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/12—Drying solid materials or objects by processes not involving the application of heat by suction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/16—Drying solid materials or objects by processes not involving the application of heat by contact with sorbent bodies, e.g. absorbent mould; by admixture with sorbent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3208—Changing the direction of the conveying path
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3314—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B2200/00—Drying processes and machines for solid materials characterised by the specific requirements of the drying goods
    • F26B2200/12—Manure

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2015124538A 2015-06-22 2015-06-22 ウェーハ乾燥装置およびウェーハ乾燥方法 Expired - Fee Related JP6367763B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015124538A JP6367763B2 (ja) 2015-06-22 2015-06-22 ウェーハ乾燥装置およびウェーハ乾燥方法
US15/186,352 US10229841B2 (en) 2015-06-22 2016-06-17 Wafer drying apparatus and wafer drying method
SG10201605035VA SG10201605035VA (en) 2015-06-22 2016-06-20 Wafer drying apparatus and wafer drying method
KR1020160077579A KR20160150601A (ko) 2015-06-22 2016-06-21 웨이퍼 건조 장치 및 웨이퍼 건조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015124538A JP6367763B2 (ja) 2015-06-22 2015-06-22 ウェーハ乾燥装置およびウェーハ乾燥方法

Publications (3)

Publication Number Publication Date
JP2017011083A JP2017011083A (ja) 2017-01-12
JP2017011083A5 JP2017011083A5 (enExample) 2017-11-02
JP6367763B2 true JP6367763B2 (ja) 2018-08-01

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JP2015124538A Expired - Fee Related JP6367763B2 (ja) 2015-06-22 2015-06-22 ウェーハ乾燥装置およびウェーハ乾燥方法

Country Status (4)

Country Link
US (1) US10229841B2 (enExample)
JP (1) JP6367763B2 (enExample)
KR (1) KR20160150601A (enExample)
SG (1) SG10201605035VA (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6367763B2 (ja) * 2015-06-22 2018-08-01 株式会社荏原製作所 ウェーハ乾燥装置およびウェーハ乾燥方法
KR102223513B1 (ko) * 2016-03-29 2021-03-05 닛폰세이테츠 가부시키가이샤 액체 제거 장치 및 액체 제거 방법
KR102326012B1 (ko) * 2019-12-13 2021-11-15 세메스 주식회사 박막 식각 방법 및 장치
JP7370884B2 (ja) * 2020-01-31 2023-10-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN111463152B (zh) * 2020-04-17 2023-03-14 重庆芯洁科技有限公司 半导体衬底的高压水洗设备及其使用方法
JP7451324B2 (ja) * 2020-06-26 2024-03-18 株式会社荏原製作所 基板処理装置および基板処理方法
CN114496719A (zh) * 2020-11-12 2022-05-13 中国科学院微电子研究所 一种用于干燥晶圆的方法及干燥设备
CN112665324B (zh) * 2020-12-28 2022-04-15 安徽省元进金元钙业有限公司 一种用于生石灰生产的原料干燥流水线
IT202100001577A1 (it) * 2021-01-27 2022-07-27 Cefla Soc Cooperativa Apparato e metodo per l’essiccazione/polimerizzazione di prodotti chimici
JP7828192B2 (ja) * 2022-02-28 2026-03-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板検知方法
CN114562874B (zh) * 2022-03-02 2023-07-04 浙江光特科技有限公司 一种用于晶圆清洗后烘干处理装置

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3931684A (en) * 1973-10-15 1976-01-13 J. J. Baker Company Limited Vapor chamber for drying
US4143468A (en) * 1974-04-22 1979-03-13 Novotny Jerome L Inert atmosphere chamber
US5575079A (en) * 1993-10-29 1996-11-19 Tokyo Electron Limited Substrate drying apparatus and substrate drying method
US5535525A (en) * 1994-03-17 1996-07-16 Vlsi Technology, Inc. Vapor/liquid phase separator for an open tank IPA-dryer
US5695817A (en) * 1994-08-08 1997-12-09 Tokyo Electron Limited Method of forming a coating film
US5551165A (en) * 1995-04-13 1996-09-03 Texas Instruments Incorporated Enhanced cleansing process for wafer handling implements
US5694701A (en) * 1996-09-04 1997-12-09 Minnesota Mining And Manufacturing Company Coated substrate drying system
AU2139197A (en) * 1996-03-29 1997-10-22 Minnesota Mining And Manufacturing Company Apparatus and method for drying a coating on a substrate employing multiple drying subzones
JP2874659B2 (ja) * 1996-07-30 1999-03-24 日本電気株式会社 基板表面処理装置
US5924154A (en) 1996-08-29 1999-07-20 Ontrak Systems, Inc. Brush assembly apparatus
JP3471543B2 (ja) * 1996-11-07 2003-12-02 大日本スクリーン製造株式会社 回転式基板乾燥装置
JPH10189527A (ja) * 1996-12-20 1998-07-21 Fujitsu Ltd 半導体装置の製造方法及び半導体装置の製造装置
JP3171807B2 (ja) * 1997-01-24 2001-06-04 東京エレクトロン株式会社 洗浄装置及び洗浄方法
JP3122742B2 (ja) 1997-03-26 2001-01-09 株式会社スーパーシリコン研究所 ウエハの表面洗浄方法およびウエハの総合研磨洗浄装置
JPH10321584A (ja) * 1997-05-22 1998-12-04 Mitsubishi Electric Corp 乾燥装置および乾燥方法
KR19990010200A (ko) * 1997-07-15 1999-02-05 윤종용 감압식 건조 장치를 이용하는 반도체장치 건조방법
JP3897404B2 (ja) * 1997-07-22 2007-03-22 オメガセミコン電子株式会社 ベーパ乾燥装置及び乾燥方法
US6213853B1 (en) 1997-09-10 2001-04-10 Speedfam-Ipec Corporation Integral machine for polishing, cleaning, rinsing and drying workpieces
US6108932A (en) * 1998-05-05 2000-08-29 Steag Microtech Gmbh Method and apparatus for thermocapillary drying
US6158141A (en) * 1998-05-07 2000-12-12 Sony Corporation Apparatus and method for drying semiconductor substrate
JP3185753B2 (ja) 1998-05-22 2001-07-11 日本電気株式会社 半導体装置の製造方法
JP2963443B1 (ja) * 1998-06-19 1999-10-18 キヤノン販売株式会社 半導体装置の製造装置
DE60044762D1 (de) * 1999-05-20 2010-09-16 Kaneka Corp Verfahren und Vorrichtung zur Herstellung eines Halbleiterbauelements
JP3653198B2 (ja) * 1999-07-16 2005-05-25 アルプス電気株式会社 乾燥用ノズルおよびこれを用いた乾燥装置ならびに洗浄装置
JP3538353B2 (ja) * 1999-12-15 2004-06-14 シャープ株式会社 洗浄液吸引装置
JP2002043266A (ja) 2000-07-27 2002-02-08 Shibaura Mechatronics Corp 基板の処理装置及び処理方法、液切りミストナイフ
JP3498288B2 (ja) 2001-01-16 2004-02-16 株式会社スーパーシリコン研究所 半導体ウエハ研磨方法
KR100904278B1 (ko) 2001-11-12 2009-06-25 도쿄엘렉트론가부시키가이샤 기판처리장치
JP2004022940A (ja) 2002-06-19 2004-01-22 Tokyo Seimitsu Co Ltd 研磨装置、研磨方法、ウェーハ待避プログラム
KR100480606B1 (ko) * 2002-08-01 2005-04-06 삼성전자주식회사 아이피에이 증기 건조 방식을 이용한 반도체 웨이퍼 건조장치
KR100447285B1 (ko) * 2002-09-05 2004-09-07 삼성전자주식회사 기판 건조 장치
EP1552876A4 (en) * 2002-09-20 2006-03-22 Tokyo Electron Ltd DRY AIR SUPPLY AND TREATMENT DEVICE
US6988327B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US7225561B2 (en) * 2002-10-25 2007-06-05 South African Nuclear Energy Corporation Limited Oxyfluorination
KR100505061B1 (ko) * 2003-02-12 2005-08-01 삼성전자주식회사 기판 이송 모듈
US6959503B2 (en) * 2003-06-13 2005-11-01 P.C.T. Systems, Inc. Method and apparatus for removing liquid from substrate surfaces using suction
JP3560962B1 (ja) * 2003-07-02 2004-09-02 エス・イー・エス株式会社 基板処理法及び基板処理装置
JP2006073573A (ja) 2004-08-31 2006-03-16 Kazuo Tanabe ストッカ付ウエーハ洗浄装置
JP4179276B2 (ja) * 2004-12-24 2008-11-12 セイコーエプソン株式会社 溶媒除去装置および溶媒除去方法
JP2006247618A (ja) 2005-03-14 2006-09-21 Dainippon Screen Mfg Co Ltd 二流体ノズルおよび該二流体ノズルを用いた基板処理装置
JP4929747B2 (ja) * 2005-03-28 2012-05-09 コニカミノルタオプト株式会社 光学フィルムの製造方法
JP2006278606A (ja) * 2005-03-29 2006-10-12 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JPWO2007108315A1 (ja) 2006-03-22 2009-08-06 株式会社荏原製作所 基板処理装置及び基板処理方法
JP2009535514A (ja) * 2006-05-02 2009-10-01 ダウ・コーニング・アイルランド・リミテッド 流体交換システム
JP4384686B2 (ja) 2007-09-25 2009-12-16 東京エレクトロン株式会社 常圧乾燥装置及び基板処理装置及び基板処理方法
JP5290081B2 (ja) 2008-10-15 2013-09-18 大日本スクリーン製造株式会社 基板処理装置
JP5140641B2 (ja) * 2009-06-29 2013-02-06 株式会社荏原製作所 基板処理方法及び基板処理装置
EP2481833A1 (en) * 2011-01-31 2012-08-01 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus for atomic layer deposition
JP2013230424A (ja) * 2012-04-27 2013-11-14 Dainippon Printing Co Ltd 容器洗浄装置及び容器洗浄方法
JP6133120B2 (ja) * 2012-05-17 2017-05-24 株式会社荏原製作所 基板洗浄装置
JP6523643B2 (ja) * 2014-09-29 2019-06-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US10332761B2 (en) * 2015-02-18 2019-06-25 SCREEN Holdings Co., Ltd. Substrate processing apparatus
JP6430870B2 (ja) * 2015-03-20 2018-11-28 東京エレクトロン株式会社 クランプ装置及びこれを用いた基板搬入出装置、並びに基板処理装置
JP6418554B2 (ja) * 2015-06-10 2018-11-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6367763B2 (ja) * 2015-06-22 2018-08-01 株式会社荏原製作所 ウェーハ乾燥装置およびウェーハ乾燥方法

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Publication number Publication date
US20160372344A1 (en) 2016-12-22
SG10201605035VA (en) 2017-01-27
US10229841B2 (en) 2019-03-12
KR20160150601A (ko) 2016-12-30
JP2017011083A (ja) 2017-01-12

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