JP6277693B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6277693B2
JP6277693B2 JP2013247862A JP2013247862A JP6277693B2 JP 6277693 B2 JP6277693 B2 JP 6277693B2 JP 2013247862 A JP2013247862 A JP 2013247862A JP 2013247862 A JP2013247862 A JP 2013247862A JP 6277693 B2 JP6277693 B2 JP 6277693B2
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Prior art keywords
layer
metal layer
barrier metal
semiconductor device
solder
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Japanese (ja)
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JP2015106638A5 (enExample
JP2015106638A (ja
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英寿 小山
英寿 小山
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2013247862A priority Critical patent/JP6277693B2/ja
Priority to US14/465,884 priority patent/US9355937B2/en
Priority to DE102014221620.6A priority patent/DE102014221620B4/de
Priority to KR1020140164164A priority patent/KR101596232B1/ko
Priority to CN201410709725.8A priority patent/CN104681541B/zh
Publication of JP2015106638A publication Critical patent/JP2015106638A/ja
Publication of JP2015106638A5 publication Critical patent/JP2015106638A5/ja
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    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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JP6863574B2 (ja) * 2017-02-22 2021-04-21 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JP2019145546A (ja) * 2018-02-16 2019-08-29 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
US10967463B2 (en) * 2018-04-11 2021-04-06 The University Of Toledo Sn whisker growth mitigation using NiO sublayers
CN113228256B (zh) * 2018-12-27 2024-03-22 株式会社大真空 压电振动器件
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CN113809030B (zh) * 2021-11-16 2022-03-15 深圳市时代速信科技有限公司 半导体器件和半导体器件的制备方法

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DE102014221620B4 (de) 2018-08-02
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US20150155224A1 (en) 2015-06-04
KR20150062963A (ko) 2015-06-08
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US9355937B2 (en) 2016-05-31

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