JP5716627B2 - ウエハの接合方法及び接合部の構造 - Google Patents
ウエハの接合方法及び接合部の構造 Download PDFInfo
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- JP5716627B2 JP5716627B2 JP2011222284A JP2011222284A JP5716627B2 JP 5716627 B2 JP5716627 B2 JP 5716627B2 JP 2011222284 A JP2011222284 A JP 2011222284A JP 2011222284 A JP2011222284 A JP 2011222284A JP 5716627 B2 JP5716627 B2 JP 5716627B2
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
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Description
図1(A)及び図1(B)は本発明の一実施形態によるウエハの接合方法を説明する概略断面図である。図1(A)は第1のウエハと第2のウエハの接合前の構造を示し、図1(B)はウエハどうしを接合した後の構造を示す。
つぎに、比較例によるウエハの接合方法で接合部3、13どうしをAuSn共晶接合させる場合を説明する。図2(A)は、比較例における第1のウエハと第2のウエハの接合前の構造を示し、図2(B)はウエハどうしを接合した後の比較例の不具合を示す。
ウエハの接合部どうしを単にAuSn共晶接合させる箇所(たとえば、後述の静電リレーにおけるウエハ間の外周部における封止用の接合部)では、図1(B)のような接合構造でよい。しかし、ウエハ11(第2のウエハ)の下面に半導体集積回路が形成されていて、その半導体集積回路が接合部13に接続されている場合がある。そのような場合には、ウエハ11にビアホールをあけ、ビアホール内に設けた貫通配線によって接合部13とウエハ11の上面に設けたバンプなどとを接続する必要がある。また、ウエハ1(第1のウエハ)にアクチュエータが設けられており、アクチュエータの電極が導電性を有する接合部3を通じて接合部13に電気的につながっている場合がある。このような場合にも、ウエハ11にビアホールをあけ、ビアホール内に設けた貫通配線によって接合部13とウエハ11の上面に設けたバンプなどとを接続する必要がある。
つぎに、ウエハどうしの接合体の具体例として、静電リレー41(電子部品)を説明する。図7は静電リレーの概略断面図である。
3 接合部(第1の接合部)
4 密着層
6 Au層
7 拡散防止層
8 接着層
11 ウエハ(第2のウエハ)
13 接合部(第2の接合部)
14 第1導電層
15 第2導電層
16 バリア層
17 絶縁被膜
18 Ti/Au層
19 AuSnハンダ層
20 Sn層
21 Au層
22 AuSnハンダ
31 絶縁層
32 ビアホール
33 貫通配線
34 保護膜
35 バンプ
Claims (21)
- 第1のウエハの上方にAuSnの濡れ性の悪い材料からなる拡散防止層を積層し、さらに前記拡散防止層の縁よりも引っ込めて前記拡散防止層の表面に接着層を形成することにより、前記第1のウエハの表面に第1の接合部を形成する工程と、
前記第2のウエハの表面に第2の接合部を形成する工程と、
前記第1のウエハと前記第2のウエハとを向かい合わせ、前記第1の接合部と前記第2の接合部とをAuSnハンダによってAuSn共晶接合させる工程と、
を備えたウエハの接合方法。 - 前記第1の接合部の前記拡散防止層は、Pt、Rh、Pd、Ir、Ru、Os等の白金族系金属を主成分とする材料からなることを特徴とする、請求項1に記載のウエハの接合方法。
- 前記第1の接合部の前記接着層は、Auを主成分とする材料からなることを特徴とする、請求項1に記載のウエハの接合方法。
- 前記第1のウエハの表面に、Crを主成分とする密着層が形成されていることを特徴とする、請求項1に記載のウエハの接合方法。
- 前記密着層と前記拡散防止層との間にAu層が形成されていることを特徴とする、請求項4に記載のウエハの接合方法。
- 前記第1の接合部又は前記第2の接合部の少なくとも一方の表面に、AuとSnを交互に積層、又はAuSn合金によって形成されたAuSnハンダ層を形成しておき、
前記AuSnハンダ層を溶融させることによって前記第1の接合部と前記第2の接合部とをAuSn共晶接合させることを特徴とする、請求項1に記載のウエハの接合方法。 - 前記第1のウエハの表面に前記第1の接合部を形成する工程において、前記第1のウエハの表面に前記第1の接合部と同じ材料からなる層を同じ順序で積層して開閉接点を形成する、請求項1に記載のウエハの接合方法。
- 前記開閉接点を構成するそれぞれの層は、前記第1の接合部において対応する同じ材料の層と同じ厚みで、かつ、前記第1のウエハの表面から同じ高さに設けられている、請求項7に記載のウエハの接合方法。
- 前記第2の接合部のうち前記第2のウエハと接する面が、耐薬品性の高い材料からなる導電層によって形成され、前記第2の接合部と対応する位置において前記第2のウエハにビアホールが開口され、前記ビアホール内に前記耐薬品性の高い材料からなる導電層と導通するようにして貫通配線が形成されることを特徴とする、請求項1に記載のウエハの接合方法。
- 前記第2の接合部は、厚みの比較的大きな導電層を有していることを特徴とする、請求項1に記載のウエハの接合方法。
- 前記第2の接合部の外周面及び表面の外周縁が絶縁被膜によって覆われ、前記第2の接合部のうち前記絶縁被膜から露出している領域がAu層又はAuを含む層によって覆われていることを特徴とする、請求項1に記載のウエハの接合方法。
- 前記耐薬品性の高い材料は、Ti、TiN、W又は白金系材料のうちいずれか1つ又は複数の材料であることを特徴とする、請求項9に記載のウエハの接合方法。
- 前記厚みの比較的大きな導電層は、Al、Cu、Ni、W又はポリシリコンのうち1つ又は複数の材料であることを特徴とする、請求項10に記載のウエハの接合方法。
- ウエハの上方にAuSnの濡れ性の悪い材料からなる拡散防止層を積層し、さらに前記拡散防止層の縁よりも引っ込めて前記拡散防止層の表面に接着層を形成し、前記ウエハと前記拡散防止層との間にAuSnの拡散によって機能劣化し易い機能層を形成した接合部の構造。
- 前記第1の接合部の前記拡散防止層は、Pt、Rh、Pd、Ir、Ru、Os等の白金族系金属を主成分とする材料からなることを特徴とする、請求項14に記載の接合部の構造。
- 前記第1の接合部の前記機能層は、前記第1のウエハの表面に形成された、Crを主成分とする密着層であることを特徴とする、請求項14に記載の接合部の構造。
- 前記第1の接合部の前記接着層は、Auを主成分とする材料からなることを特徴とする、請求項14に記載の接合部の構造。
- 前記第1のウエハの表面に前記第1の接合部と同じ材料からなる層を同じ順序で積層して開閉接点を形成した、請求項14に記載の接合部の構造。
- 前記開閉接点を構成するそれぞれの層は、前記第1の接合部において対応する同じ材料の層と同じ厚みで、かつ、前記第1のウエハの表面から同じ高さに設けられている、請求項14に記載の接合部の構造。
- ウエハの表面に形成された耐薬品性の高い材料からなる第1の導電層と、前記第1の導電層の上方に形成された厚みの比較的大きな第2の導電層と、前記第2の導電層の上方に形成されたバリア層とを有し、前記第1の導電層の外周面と前記第2の導電層の外周面と前記バリア層の外周面及び表面の外周縁とが絶縁被膜によって覆われており、前記バリア層の一部が前記絶縁被膜から露出し、前記絶縁被膜の開口部の開口幅が前記バリア層の幅よりも小さくなっていることを特徴とする接合部の構造。
- 請求項1に記載したウエハの接合方法を用いて接合された一対のウエハの内部に電子部品構造体を形成した電子部品。
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