JP6109164B2 - リソグラフィー用途用の小分子由来の金属酸化物フィルム - Google Patents
リソグラフィー用途用の小分子由来の金属酸化物フィルム Download PDFInfo
- Publication number
- JP6109164B2 JP6109164B2 JP2014518927A JP2014518927A JP6109164B2 JP 6109164 B2 JP6109164 B2 JP 6109164B2 JP 2014518927 A JP2014518927 A JP 2014518927A JP 2014518927 A JP2014518927 A JP 2014518927A JP 6109164 B2 JP6109164 B2 JP 6109164B2
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- Prior art keywords
- composition
- hard mask
- silicon
- monomer
- layer
- Prior art date
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
- H10P76/2043—Photolithographic processes using an anti-reflective coating
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/58—Metal-containing linkages
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Structural Engineering (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Architecture (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Materials For Photolithography (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Silicon Polymers (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/178,301 | 2011-07-07 | ||
| US13/178,301 US8647809B2 (en) | 2011-07-07 | 2011-07-07 | Metal-oxide films from small molecules for lithographic applications |
| PCT/US2012/044248 WO2013006314A2 (en) | 2011-07-07 | 2012-06-26 | Metal-oxide films from small molecules for lithographic applications |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014532289A JP2014532289A (ja) | 2014-12-04 |
| JP2014532289A5 JP2014532289A5 (https=) | 2017-02-09 |
| JP6109164B2 true JP6109164B2 (ja) | 2017-04-05 |
Family
ID=47437628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014518927A Active JP6109164B2 (ja) | 2011-07-07 | 2012-06-26 | リソグラフィー用途用の小分子由来の金属酸化物フィルム |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8647809B2 (https=) |
| EP (1) | EP2729534B1 (https=) |
| JP (1) | JP6109164B2 (https=) |
| KR (1) | KR101902046B1 (https=) |
| CN (1) | CN103781854B (https=) |
| TW (1) | TWI567489B (https=) |
| WO (1) | WO2013006314A2 (https=) |
Families Citing this family (276)
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| US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
| JP6295198B2 (ja) * | 2011-10-10 | 2018-03-14 | ブルーワー サイエンス アイ エヌ シー． | リソグラフ処理のためのスピンオン炭素組成物 |
| US8795774B2 (en) * | 2012-09-23 | 2014-08-05 | Rohm And Haas Electronic Materials Llc | Hardmask |
| US9171720B2 (en) * | 2013-01-19 | 2015-10-27 | Rohm And Haas Electronic Materials Llc | Hardmask surface treatment |
| US9136123B2 (en) * | 2013-01-19 | 2015-09-15 | Rohm And Haas Electronic Materials Llc | Hardmask surface treatment |
| US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
| US8961807B2 (en) | 2013-03-15 | 2015-02-24 | Cabot Microelectronics Corporation | CMP compositions with low solids content and methods related thereto |
| DE102013212018A1 (de) * | 2013-06-25 | 2015-01-08 | Evonik Industries Ag | Metalloxid-Prekursoren, sie enthaltende Beschichtungszusammensetzungen, und ihre Verwendung |
| US9201305B2 (en) * | 2013-06-28 | 2015-12-01 | Az Electronic Materials (Luxembourg) S.A.R.L. | Spin-on compositions of soluble metal oxide carboxylates and methods of their use |
| US9296879B2 (en) | 2013-09-03 | 2016-03-29 | Rohm And Haas Electronic Materials Llc | Hardmask |
| TWI653507B (zh) * | 2014-02-07 | 2019-03-11 | 比利時商愛美科公司 | 用於減低微影製程後線寬粗糙度之電漿方法 |
| DE102014202718A1 (de) | 2014-02-14 | 2015-08-20 | Evonik Degussa Gmbh | Beschichtungszusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung |
| US9583358B2 (en) | 2014-05-30 | 2017-02-28 | Samsung Electronics Co., Ltd. | Hardmask composition and method of forming pattern by using the hardmask composition |
| KR102287343B1 (ko) | 2014-07-04 | 2021-08-06 | 삼성전자주식회사 | 하드마스크 조성물 및 이를 이용한 패턴의 형성방법 |
| KR102287344B1 (ko) * | 2014-07-25 | 2021-08-06 | 삼성전자주식회사 | 하드마스크 조성물 및 이를 이용한 패턴의 형성방법 |
| US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
| KR20170059992A (ko) * | 2014-09-17 | 2017-05-31 | 제이에스알 가부시끼가이샤 | 패턴 형성 방법 |
| WO2016043200A1 (ja) * | 2014-09-17 | 2016-03-24 | Jsr株式会社 | パターン形成方法 |
| US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
| KR102384226B1 (ko) | 2015-03-24 | 2022-04-07 | 삼성전자주식회사 | 하드마스크 조성물 및 이를 이용한 패턴 형성방법 |
| US9704711B2 (en) | 2015-03-27 | 2017-07-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon-based middle layer composition |
| KR102463893B1 (ko) | 2015-04-03 | 2022-11-04 | 삼성전자주식회사 | 하드마스크 조성물 및 이를 이용한 패턴의 형성방법 |
| JP6883291B2 (ja) | 2015-08-24 | 2021-06-09 | 学校法人 関西大学 | リソグラフィー用材料及びその製造方法、リソグラフィー用組成物、パターン形成方法、並びに、化合物、樹脂、及びこれらの精製方法 |
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-
2011
- 2011-07-07 US US13/178,301 patent/US8647809B2/en active Active
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2012
- 2012-06-26 EP EP12807860.7A patent/EP2729534B1/en active Active
- 2012-06-26 CN CN201280041124.3A patent/CN103781854B/zh active Active
- 2012-06-26 JP JP2014518927A patent/JP6109164B2/ja active Active
- 2012-06-26 KR KR1020147003213A patent/KR101902046B1/ko active Active
- 2012-06-26 WO PCT/US2012/044248 patent/WO2013006314A2/en not_active Ceased
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Also Published As
| Publication number | Publication date |
|---|---|
| US8647809B2 (en) | 2014-02-11 |
| KR20140061381A (ko) | 2014-05-21 |
| WO2013006314A2 (en) | 2013-01-10 |
| JP2014532289A (ja) | 2014-12-04 |
| EP2729534B1 (en) | 2019-05-01 |
| KR101902046B1 (ko) | 2018-09-27 |
| TWI567489B (zh) | 2017-01-21 |
| US20130011630A1 (en) | 2013-01-10 |
| EP2729534A4 (en) | 2015-02-25 |
| TW201307996A (zh) | 2013-02-16 |
| WO2013006314A3 (en) | 2013-04-11 |
| CN103781854A (zh) | 2014-05-07 |
| EP2729534A2 (en) | 2014-05-14 |
| CN103781854B (zh) | 2017-02-22 |
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