JP6081704B2 - 半導体メモリ装置 - Google Patents
半導体メモリ装置 Download PDFInfo
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- JP6081704B2 JP6081704B2 JP2012023677A JP2012023677A JP6081704B2 JP 6081704 B2 JP6081704 B2 JP 6081704B2 JP 2012023677 A JP2012023677 A JP 2012023677A JP 2012023677 A JP2012023677 A JP 2012023677A JP 6081704 B2 JP6081704 B2 JP 6081704B2
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- bit line
- insulator
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- 239000004065 semiconductor Substances 0.000 title claims description 112
- 239000012212 insulator Substances 0.000 claims description 112
- 239000003990 capacitor Substances 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 7
- 230000003796 beauty Effects 0.000 claims 4
- 238000000034 method Methods 0.000 description 22
- 238000005530 etching Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 19
- 230000003071 parasitic effect Effects 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 230000010354 integration Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000005083 Zinc sulfide Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- AKJVMGQSGCSQBU-UHFFFAOYSA-N zinc azanidylidenezinc Chemical compound [Zn++].[N-]=[Zn].[N-]=[Zn] AKJVMGQSGCSQBU-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
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- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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Description
本実施の形態のメモリセルの作製工程を図1(A)、図1(B)、図2(A)、図2(B)、図3(A)、図3(B)、図4、図5(A)乃至図5(C)、図6および図7(A)乃至図7(D)を用いて説明する。図1(A)、図1(B)、図2(A)、図2(B)、図3(A)、図3(B)、図4は本実施の形態のメモリセルのビット線に平行な一断面を示す。図5(A)乃至図5(C)は本実施の形態のメモリセルを上方より見た場合の作製工程ごとの模式図を示す。図6は本実施の形態のメモリセルの回路図を示す。さらに、図7(A)乃至図7(D)は、本実施の形態におけるビット線を上方より見た場合の模式図と断面図を示す。
第1絶縁体101上に、ビット線102bを形成する。このとき、ビット線102bと隣接するビット線の配置にはいくつかの方式がある。例えば、図7(A)と図7(B)に示すように、ビット線102bと隣接するビット線102a、102cを全て同じ深さあるいは同じ層に形成する方法である。図7(A)はビット線102a乃至102cを形成した面を図1(A)の点線CDを含む平面で切断した断面の模式図であり、図7(A)の点線EFの断面を図7(B)に示す。なお、図7(A)および図7(C)の点線ABの断面は図1(A)に示される。
第3絶縁体104および第2絶縁体103をエッチングして、コンタクトホールを形成し、さらにビット線102bに接続する第1コンタクトプラグ105a、105bを形成する。さらに、第4絶縁体106を形成する。第4絶縁体106の厚さは後に形成する溝の深さ、さらにはトランジスタのチャネル長を考慮して決定される。例えば、100nm乃至1μmとすればよい。また、エッチングレートが第3絶縁体104と異なる材料であることが好ましく、酸化シリコンを用いるとよい。
導電層107と第4絶縁体106をエッチングして、溝108a、108bを形成する。溝108a、108bはビット線102bと概略直交するように形成される。相当な厚さの第4絶縁体106のエッチングでは、第3絶縁体104をエッチングストッパとして使用する。すなわち、第4絶縁体106をエッチングする工程は、第3絶縁体104が露出した状態で停止する。この結果、第4絶縁体106および導電層107は、例えば、ストライプ状の第4絶縁体106a乃至106cおよび導電層107a乃至107cとなる。なお、第4絶縁体106a乃至106cおよび導電層107a乃至107cの形状はストライプ状に限られない。また、図に示す溝の幅Wと溝の深さTの比率T/Wは、2以上20以下、好ましくは5以上20以下とするとよい。
島状の半導体領域109bを形成する。半導体領域109bは第1コンタクトプラグ105a、105bの少なくとも1つと接するようにする。この際、半導体領域109bをマスクとして、導電層107a乃至107cもエッチングする。したがって、導電層107a乃至107cのうち、上に半導体領域109bが存在しない部分は除去される。図2(B)では、導電層107bの一部が残って、導電層107Bとなる。その後、島状の半導体領域109bを覆ってゲート絶縁体110を形成する。
導電性膜を形成後、これを異方性エッチングすることでワード線111a乃至111dを形成する。導電性膜の厚さは溝108a、108bの幅Wの1/3乃至1/30とするとよい。図にxで示すワード線111a乃至111dの幅は、概ね、導電性膜の厚さと同程度となる。導電性膜が厚すぎると、異方性エッチングをおこなっても、溝の内部で導電性膜を分離できなくなる。このように溝の側面に自己整合的に配線を形成する技術に関しては、特許文献1を参照すればよい。
第5絶縁体112を形成する。第5絶縁体112としては誘電率の低い材料を用いることが好ましく、また、溝108a、108bを埋めるように形成する。そして、第5絶縁体112の表面を平坦化する。平坦化工程はゲート絶縁体110が露出した時点で停止する。そして、第5絶縁体112の上に第6絶縁体113および第7絶縁体114を形成する。
酸化シリコン、酸化炭化シリコン等の比較的誘電率の低い材料で第8絶縁体116を形成して、これにキャパシタを形成するための孔を設ける。そして、孔の内面に厚さ2nm乃至20nmの第1キャパシタ電極117を形成する。なお、第1キャパシタ電極117の厚さの上限は最小加工寸法Fに応じて、決定すればよく、Fが20nmであれば、5nm以下とすることが好ましく、Fが10nmであれば、2.5nm以下とすることが好ましい。
図8に本実施の形態を示す。本実施の形態では、センスアンプ、デコーダ等、メモリセルを駆動するための回路(駆動回路202)は単結晶半導体の基板201表面に公知の半導体集積回路技術を用いて形成されている。その上に、ビット線203が形成され、さらに、その上にセルトランジスタ層204が設けられる。さらに、その上にキャパシタ層205が形成される。なお、セルトランジスタ層204、キャパシタ層205の構成は実施の形態1を参照するものとする。
102a ビット線
102b ビット線
102c ビット線
103 第2絶縁体
104 第3絶縁体
105a 第1コンタクトプラグ
105b 第1コンタクトプラグ
105c 第1コンタクトプラグ
105d 第1コンタクトプラグ
106 第4絶縁体
106a 第4絶縁体
106b 第4絶縁体
106c 第4絶縁体
107 導電層
107a 導電層
107b 導電層
107c 導電層
107A 導電層
107B 導電層
107C 導電層
108a 溝
108b 溝
109a 半導体領域
109b 半導体領域
109c 半導体領域
110 ゲート絶縁体
111a ワード線
111b ワード線
111c ワード線
111d ワード線
112 第5絶縁体
113 第6絶縁体
114 第7絶縁体
115a 第2コンタクトプラグ
115b 第2コンタクトプラグ
115c 第2コンタクトプラグ
116 第8絶縁体
117 第1キャパシタ電極
118 キャパシタ絶縁体
119 第2キャパシタ電極
120a セルトランジスタ
120b セルトランジスタ
201 基板
202 駆動回路
203 ビット線
204 セルトランジスタ層
205 キャパシタ層
Claims (3)
- 基板上に設けられた2本以上のビット線と、
前記ビット線上に設けられ、第1及び第2の溝を有する絶縁体と、
前記絶縁体の頂部に設けられた導電層と、
前記第1の溝の底面において第1のコンタクトプラグを介して前記ビット線と電気的に接続された第1の半導体領域と、
前記第1の半導体領域を介して前記第1の溝の側面と重なる第1のワード線と、
前記第2の溝の底面において第2のコンタクトプラグを介して前記ビット線と電気的に接続された第2の半導体領域と、
前記第2の半導体領域を介して前記第2の溝の側面と重なる第2のワード線と、
第3のコンタクトプラグを介して前記導電層と電気的に接続されたキャパシタと、を有し、
前記第1及び前記第2の半導体領域は、それぞれ前記第1及び前記第2の溝の底面から側面を経て前記導電層上に連続的に設けられていることを特徴とする半導体メモリ装置。 - 基板上に設けられた2本以上のビット線と、
前記ビット線上に設けられ、第1及び第2の溝を有する第1の絶縁体と、
前記第1の絶縁体の頂部に設けられた導電層と、
前記第1の溝の底面において第1のコンタクトプラグを介して前記ビット線と電気的に接続された第1の半導体領域と、
前記第1の半導体領域を介して前記第1の溝の側面と重なる第1のワード線と、
前記第2の溝の底面において第2のコンタクトプラグを介して前記ビット線と電気的に接続された第2の半導体領域と、
前記第2の半導体領域を介して前記第2の溝の側面と重なる第2のワード線と、
前記第3のコンタクトプラグ上に設けられ、孔を有する第2の絶縁体と、を有し、
前記孔の内面には、前記第3のコンタクトプラグと電気的に接続された第1の電極と、絶縁膜を介して前記第1の電極と対向する第2の電極とが設けられており、
前記第2の電極は、前記孔の内部に隙間が生じるように設けられており、
前記第1及び前記第2の半導体領域は、それぞれ前記第1及び前記第2の溝の底面から側面を経て前記導電層上に連続的に設けられていることを特徴とする半導体メモリ装置。 - 請求項1又は請求項2において、
前記第1の半導体領域及び前記第2の半導体領域は、酸化物半導体を有することを特徴とする半導体メモリ装置。
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US20120199842A1 (en) | 2012-08-09 |
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TWI550776B (zh) | 2016-09-21 |
US9431400B2 (en) | 2016-08-30 |
JP2012182446A (ja) | 2012-09-20 |
KR101903349B1 (ko) | 2018-10-04 |
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