JP6080408B2 - イメージセンサ - Google Patents
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- JP6080408B2 JP6080408B2 JP2012152860A JP2012152860A JP6080408B2 JP 6080408 B2 JP6080408 B2 JP 6080408B2 JP 2012152860 A JP2012152860 A JP 2012152860A JP 2012152860 A JP2012152860 A JP 2012152860A JP 6080408 B2 JP6080408 B2 JP 6080408B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- oxide semiconductor
- potential
- photodiode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 231
- 239000000758 substrate Substances 0.000 claims description 71
- 239000003990 capacitor Substances 0.000 claims description 57
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- 229910052738 indium Inorganic materials 0.000 description 25
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- 238000005259 measurement Methods 0.000 description 12
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- 150000001340 alkali metals Chemical class 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
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- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
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- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
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- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
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- 239000000460 chlorine Substances 0.000 description 2
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- 230000018044 dehydration Effects 0.000 description 2
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
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- 238000005468 ion implantation Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 229910052754 neon Inorganic materials 0.000 description 2
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- 239000001272 nitrous oxide Substances 0.000 description 2
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- 229910018120 Al-Ga-Zn Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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- 229910052693 Europium Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910020944 Sn-Mg Inorganic materials 0.000 description 1
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- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910009369 Zn Mg Inorganic materials 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
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- 238000007429 general method Methods 0.000 description 1
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- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
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- 239000004973 liquid crystal related substance Substances 0.000 description 1
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- 230000003211 malignant effect Effects 0.000 description 1
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- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
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- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/772—Field effect transistors
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
Description
本実施の形態では、本発明の一態様のイメージセンサの回路構成とその駆動方法について図1〜図3を参照して説明する。
本発明の一態様は、グローバルシャッタ方式とすることもできる。本実施の形態では、本発明の一態様であるグローバルシャッタ方式のイメージセンサの回路構成について図4を参照して説明する。
実施の形態1及び実施の形態2における第1のトランジスタ206としては、酸化物半導体層にチャネルが形成されるトランジスタを用いることが好ましい。
ここで、Eはポテンシャル障壁の高さ、kはボルツマン定数、Tは絶対温度である。また、ポテンシャル障壁が欠陥に由来すると仮定すると、Levinsonモデルでは、ポテンシャル障壁は下記の式(4)で表される。
側壁絶縁物606a及び側壁絶縁物606b直下の半導体領域は、図14(A)に示すトランジスタではn+の導電型を呈する領域であるが、図14(B)に示すトランジスタでは真性の半導体領域である。すなわち、図14(B)に示すトランジスタでは、半導体領域603a(半導体領域603c)とゲート605が重ならない領域の幅がLoffだけある。この領域をオフセット領域といい、その幅Loffをオフセット長という。オフセット長は、側壁絶縁物606a(側壁絶縁物606b)の幅と同じである。
試料1及び試料2のいずれも、BT試験前後におけるしきい値電圧の変動が小さく、信頼性が高いことがわかる。
102 第1のシフトレジスタ
104 第2のシフトレジスタ
106 読み出し回路
108 画素アレイ
110 画素
200 フォトダイオード
202 第1の容量素子
204 第2の容量素子
206 第1のトランジスタ
208 第2のトランジスタ
210 第3のトランジスタ
212 データ保持部
220 第1の配線
222 第2の配線
224 第3の配線
226 第4の配線
228 第5の配線
230 第6の配線
232 第7の配線
234 第8の配線
311 期間
312 期間
313 期間
314 期間
315 期間
316 期間
400 第4のトランジスタ
500 pチャネル型トランジスタ及びnチャネル型トランジスタが設けられた半導体基板
501 高濃度不純物領域
502 低濃度不純物領域
503 ゲート絶縁膜
504 ゲート電極
505 層間絶縁膜
510 酸化物半導体層にチャネル形成領域を有するトランジスタ
511 酸化物半導体層
512a ソース電極
512b ドレイン電極
513 ゲート絶縁膜
514a 電極
514b ゲート電極
601 下地絶縁膜
602 埋め込み絶縁膜
603a 半導体領域
603b 半導体領域
603c 半導体領域
604 ゲート絶縁膜
605 ゲート
606a 側壁絶縁物
606b 側壁絶縁物
607 絶縁膜
608a ソース
608b ドレイン
Claims (4)
- 第1の動作を行った後に、第2の動作を繰り返し行うことができるイメージセンサであって、
第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、容量素子と、フォトダイオードと、を有し、
前記第1のトランジスタのソース又はドレインの一方は、前記第2のトランジスタのソース又はドレインの一方と電気的に接続され、
前記第3のトランジスタのソース又はドレインの一方は、前記第1のトランジスタのゲートと電気的に接続され、
前記容量素子の第1の電極は、前記フォトダイオードと電気的に接続され、
前記容量素子の第2の電極は、前記第1のトランジスタのゲートと電気的に接続され、
前記第3のトランジスタは、酸化物半導体層を有し、
前記酸化物半導体層は、半導体基板上方に設けられており、
前記第1の動作では、前記第3のトランジスタをオンにした状態で、前記容量素子の第1の電極の電位をリセットした後に、前記容量素子の第1の電極の電位を前記フォトダイオードへの受光強度に基づいて変化させ、
前記第2の動作では、前記第3のトランジスタをオフにした状態で、前記容量素子の第1の電極の電位をリセットした後に、前記容量素子の第1の電極の電位を前記フォトダイオードへの受光強度に基づいて変化させることを特徴とするイメージセンサ。 - 第1の動作を行った後に、第2の動作を繰り返し行うことができるイメージセンサであって、
第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第4のトランジスタと、容量素子と、フォトダイオードと、を有し、
前記第1のトランジスタのソース又はドレインの一方は、前記第2のトランジスタのソース又はドレインの一方と電気的に接続され、
前記第3のトランジスタのソース又はドレインの一方は、前記第1のトランジスタのゲートと電気的に接続され、
前記第4のトランジスタのソース又はドレインの一方は、前記フォトダイオードと電気的に接続され、
前記容量素子の第1の電極は、前記第4のトランジスタのソース又はドレインの他方と電気的に接続され、
前記容量素子の第2の電極は、前記第1のトランジスタのゲートと電気的に接続され、
前記第3のトランジスタは、酸化物半導体層を有し、
前記酸化物半導体層は、半導体基板上方に設けられており、
前記第1の動作では、前記第3のトランジスタをオンにした状態で、前記容量素子の第1の電極の電位をリセットした後に、前記容量素子の第1の電極の電位を前記フォトダイオードへの受光強度に基づいて変化させ、
前記第2の動作では、前記第3のトランジスタをオフにした状態で、前記容量素子の第1の電極の電位をリセットした後に、前記容量素子の第1の電極の電位を前記フォトダイオードへの受光強度に基づいて変化させることを特徴とするイメージセンサ。 - 請求項1又は請求項2において、
前記半導体基板には、pチャネル型トランジスタ又はnチャネル型トランジスタが設けられていることを特徴とするイメージセンサ。 - 請求項1乃至請求項3のいずれか一項において、
前記第1の動作を終了した後に前記フォトダイオードへの受光感度が急激に変化した場合には、再度前記第1の動作を行うことを特徴とするイメージセンサ。
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US8605059B2 (en) | 2010-07-02 | 2013-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Input/output device and driving method thereof |
US8803164B2 (en) | 2010-08-06 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Solid-state image sensing device and semiconductor display device |
US9343480B2 (en) | 2010-08-16 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5763474B2 (ja) | 2010-08-27 | 2015-08-12 | 株式会社半導体エネルギー研究所 | 光センサ |
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US8836626B2 (en) * | 2011-07-15 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
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