JP5996381B2 - 基板処理装置および基板処理方法 - Google Patents

基板処理装置および基板処理方法 Download PDF

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Publication number
JP5996381B2
JP5996381B2 JP2012243723A JP2012243723A JP5996381B2 JP 5996381 B2 JP5996381 B2 JP 5996381B2 JP 2012243723 A JP2012243723 A JP 2012243723A JP 2012243723 A JP2012243723 A JP 2012243723A JP 5996381 B2 JP5996381 B2 JP 5996381B2
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gas
wafer
substrate
supply
supplying
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JP2013153135A5 (enExample
JP2013153135A (ja
Inventor
波 宏 光 難
波 宏 光 難
フィトリアント
永 容 一 徳
永 容 一 徳
野 嘉 文 天
野 嘉 文 天
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2012243723A priority Critical patent/JP5996381B2/ja
Priority to TW101143316A priority patent/TWI578424B/zh
Priority to TW108116486A priority patent/TWI706495B/zh
Priority to TW106105399A priority patent/TWI643284B/zh
Priority to TW106105398A priority patent/TWI689026B/zh
Priority to KR1020120152923A priority patent/KR101789111B1/ko
Priority to US13/727,671 priority patent/US8828183B2/en
Publication of JP2013153135A publication Critical patent/JP2013153135A/ja
Priority to US14/447,029 priority patent/US9859136B2/en
Publication of JP2013153135A5 publication Critical patent/JP2013153135A5/ja
Application granted granted Critical
Publication of JP5996381B2 publication Critical patent/JP5996381B2/ja
Priority to KR1020170134117A priority patent/KR102009083B1/ko
Priority to US15/823,691 priority patent/US10707102B2/en
Priority to KR1020190093925A priority patent/KR102142220B1/ko
Priority to US16/890,332 priority patent/US11437252B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
JP2012243723A 2011-12-28 2012-11-05 基板処理装置および基板処理方法 Active JP5996381B2 (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP2012243723A JP5996381B2 (ja) 2011-12-28 2012-11-05 基板処理装置および基板処理方法
TW101143316A TWI578424B (zh) 2011-12-28 2012-11-20 基板處理裝置與基板處理方法
TW108116486A TWI706495B (zh) 2011-12-28 2012-11-20 基板處理裝置
TW106105399A TWI643284B (zh) 2011-12-28 2012-11-20 基板處理裝置
TW106105398A TWI689026B (zh) 2011-12-28 2012-11-20 基板處理裝置
KR1020120152923A KR101789111B1 (ko) 2011-12-28 2012-12-26 기판 처리 장치 및 기판 처리 방법
US13/727,671 US8828183B2 (en) 2011-12-28 2012-12-27 Substrate processing apparatus and substrate processing method
US14/447,029 US9859136B2 (en) 2011-12-28 2014-07-30 Substrate processing apparatus and substrate processing method
KR1020170134117A KR102009083B1 (ko) 2011-12-28 2017-10-16 기판 처리 장치
US15/823,691 US10707102B2 (en) 2011-12-28 2017-11-28 Substrate processing apparatus and substrate processing method
KR1020190093925A KR102142220B1 (ko) 2011-12-28 2019-08-01 기판 처리 장치 및 기판 처리 방법
US16/890,332 US11437252B2 (en) 2011-12-28 2020-06-02 Substrate processing apparatus and substrate processing method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011289320 2011-12-28
JP2011289320 2011-12-28
JP2012243723A JP5996381B2 (ja) 2011-12-28 2012-11-05 基板処理装置および基板処理方法

Publications (3)

Publication Number Publication Date
JP2013153135A JP2013153135A (ja) 2013-08-08
JP2013153135A5 JP2013153135A5 (enExample) 2015-03-12
JP5996381B2 true JP5996381B2 (ja) 2016-09-21

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US (4) US8828183B2 (enExample)
JP (1) JP5996381B2 (enExample)
KR (3) KR101789111B1 (enExample)
TW (4) TWI689026B (enExample)

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TWI576938B (zh) 2012-08-17 2017-04-01 斯克林集團公司 基板處理裝置及基板處理方法
JP5996329B2 (ja) * 2012-08-20 2016-09-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、および基板処理方法
JP6100487B2 (ja) * 2012-08-20 2017-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6148475B2 (ja) * 2013-01-25 2017-06-14 株式会社東芝 半導体製造装置および半導体装置の製造方法
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KR102091291B1 (ko) 2013-02-14 2020-03-19 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
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JP6240450B2 (ja) * 2013-09-27 2017-11-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
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