TWI689026B - 基板處理裝置 - Google Patents

基板處理裝置 Download PDF

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Publication number
TWI689026B
TWI689026B TW106105398A TW106105398A TWI689026B TW I689026 B TWI689026 B TW I689026B TW 106105398 A TW106105398 A TW 106105398A TW 106105398 A TW106105398 A TW 106105398A TW I689026 B TWI689026 B TW I689026B
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Taiwan
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gas
wafer
substrate
temperature
ejection port
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TW106105398A
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English (en)
Chinese (zh)
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TW201717303A (zh
Inventor
難波宏光
菲特利安多
德永容一
天野嘉文
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
TW106105398A 2011-12-28 2012-11-20 基板處理裝置 TWI689026B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011-289320 2011-12-28
JP2011289320 2011-12-28
JP2012243723A JP5996381B2 (ja) 2011-12-28 2012-11-05 基板処理装置および基板処理方法
JP2012-243723 2012-11-05

Publications (2)

Publication Number Publication Date
TW201717303A TW201717303A (zh) 2017-05-16
TWI689026B true TWI689026B (zh) 2020-03-21

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Family Applications (4)

Application Number Title Priority Date Filing Date
TW106105398A TWI689026B (zh) 2011-12-28 2012-11-20 基板處理裝置
TW108116486A TWI706495B (zh) 2011-12-28 2012-11-20 基板處理裝置
TW101143316A TWI578424B (zh) 2011-12-28 2012-11-20 基板處理裝置與基板處理方法
TW106105399A TWI643284B (zh) 2011-12-28 2012-11-20 基板處理裝置

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW108116486A TWI706495B (zh) 2011-12-28 2012-11-20 基板處理裝置
TW101143316A TWI578424B (zh) 2011-12-28 2012-11-20 基板處理裝置與基板處理方法
TW106105399A TWI643284B (zh) 2011-12-28 2012-11-20 基板處理裝置

Country Status (4)

Country Link
US (4) US8828183B2 (enExample)
JP (1) JP5996381B2 (enExample)
KR (3) KR101789111B1 (enExample)
TW (4) TWI689026B (enExample)

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JP5996381B2 (ja) * 2011-12-28 2016-09-21 東京エレクトロン株式会社 基板処理装置および基板処理方法
TWI576938B (zh) 2012-08-17 2017-04-01 斯克林集團公司 基板處理裝置及基板處理方法
JP5996329B2 (ja) * 2012-08-20 2016-09-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、および基板処理方法
JP6100487B2 (ja) 2012-08-20 2017-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6148475B2 (ja) * 2013-01-25 2017-06-14 株式会社東芝 半導体製造装置および半導体装置の製造方法
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TW201443272A (zh) * 2013-02-20 2014-11-16 Applied Materials Inc 基板的壓差吸附之裝置與方法
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JP6137986B2 (ja) * 2013-08-07 2017-05-31 株式会社荏原製作所 基板洗浄及び乾燥装置
TWI569349B (zh) 2013-09-27 2017-02-01 斯克林集團公司 基板處理裝置及基板處理方法
JP6240450B2 (ja) * 2013-09-27 2017-11-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR101673061B1 (ko) 2013-12-03 2016-11-04 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
JP6190278B2 (ja) * 2014-01-08 2017-08-30 東京エレクトロン株式会社 熱交換システム及び同熱交換システムを有する基板処理装置
JP6330998B2 (ja) 2014-02-17 2018-05-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR101893450B1 (ko) * 2014-04-30 2018-08-30 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조 방법
JP6195803B2 (ja) * 2014-05-02 2017-09-13 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
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JP6318869B2 (ja) * 2014-05-30 2018-05-09 東京エレクトロン株式会社 成膜装置
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JP6538233B2 (ja) * 2018-04-09 2019-07-03 東京エレクトロン株式会社 基板液処理装置
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TWI578424B (zh) 2017-04-11
TWI706495B (zh) 2020-10-01
KR102009083B1 (ko) 2019-08-08
TW201717304A (zh) 2017-05-16
US20140374022A1 (en) 2014-12-25
JP5996381B2 (ja) 2016-09-21
KR20170120057A (ko) 2017-10-30
TW201931501A (zh) 2019-08-01
US10707102B2 (en) 2020-07-07
US20130171831A1 (en) 2013-07-04
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TW201717303A (zh) 2017-05-16
JP2013153135A (ja) 2013-08-08
KR20130076735A (ko) 2013-07-08
US8828183B2 (en) 2014-09-09
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US20180108544A1 (en) 2018-04-19
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US20200328095A1 (en) 2020-10-15
US11437252B2 (en) 2022-09-06

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