JP5963414B2 - トランジスタの作製方法 - Google Patents
トランジスタの作製方法 Download PDFInfo
- Publication number
- JP5963414B2 JP5963414B2 JP2011214628A JP2011214628A JP5963414B2 JP 5963414 B2 JP5963414 B2 JP 5963414B2 JP 2011214628 A JP2011214628 A JP 2011214628A JP 2011214628 A JP2011214628 A JP 2011214628A JP 5963414 B2 JP5963414 B2 JP 5963414B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- layer
- semiconductor
- transistor
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 378
- 239000007789 gas Substances 0.000 claims description 88
- 239000012535 impurity Substances 0.000 claims description 71
- 239000012298 atmosphere Substances 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 229910052756 noble gas Inorganic materials 0.000 claims 2
- 239000010410 layer Substances 0.000 description 327
- 230000004888 barrier function Effects 0.000 description 46
- 239000000758 substrate Substances 0.000 description 41
- 238000000151 deposition Methods 0.000 description 31
- 230000008021 deposition Effects 0.000 description 31
- 238000009832 plasma treatment Methods 0.000 description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 25
- 239000010408 film Substances 0.000 description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 239000001257 hydrogen Substances 0.000 description 19
- 229910052739 hydrogen Inorganic materials 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 14
- 229910052786 argon Inorganic materials 0.000 description 14
- 230000005669 field effect Effects 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 239000010936 titanium Substances 0.000 description 14
- 229910052719 titanium Inorganic materials 0.000 description 14
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 238000009616 inductively coupled plasma Methods 0.000 description 9
- 229910000077 silane Inorganic materials 0.000 description 9
- -1 tungsten nitride Chemical class 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- 150000003254 radicals Chemical class 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000001307 helium Substances 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 6
- 229910052743 krypton Inorganic materials 0.000 description 6
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 6
- 229910052754 neon Inorganic materials 0.000 description 6
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 229910052724 xenon Inorganic materials 0.000 description 6
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000005416 organic matter Substances 0.000 description 5
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000010790 dilution Methods 0.000 description 4
- 239000012895 dilution Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000005121 nitriding Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 229960001730 nitrous oxide Drugs 0.000 description 3
- 235000013842 nitrous oxide Nutrition 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 3
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 2
- QDHHCQZDFGDHMP-UHFFFAOYSA-N Chloramine Chemical compound ClN QDHHCQZDFGDHMP-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- MDQRDWAGHRLBPA-UHFFFAOYSA-N fluoroamine Chemical compound FN MDQRDWAGHRLBPA-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 2
- QEHKBHWEUPXBCW-UHFFFAOYSA-N nitrogen trichloride Chemical compound ClN(Cl)Cl QEHKBHWEUPXBCW-UHFFFAOYSA-N 0.000 description 2
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 2
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- OWXLRKWPEIAGAT-UHFFFAOYSA-N [Mg].[Cu] Chemical compound [Mg].[Cu] OWXLRKWPEIAGAT-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本実施の形態では、本発明の一形態であるトランジスタの作製方法について説明する。なお、トランジスタは、p型よりもn型の方が、キャリアの移動度が高い。また、同一の基板上に形成するトランジスタを全て同じ極性に統一すると、工程数を抑えることができ、好ましい。そのため、本実施の形態では、n型のトランジスタの作製方法について説明する。
qφbp_1=Eg_1−q(φm−χ_1) (数1)
qφbp_2=Eg_2−q(φm−χ_2) (数2)
本実施の形態では、実施の形態1と異なる構造のトランジスタの作製方法について、図6を用いて説明する。本実施の形態では実施の形態1と比較して、障壁領域の形成方法が異なる。
本実施の形態では、実施の形態1及び2と異なる構造のトランジスタの作製方法について、図8を用いて説明する。
本実施の形態では、実施の形態1乃至3と異なる構造のトランジスタの作製方法について、図9および図10を用いて説明する。
トランジスタを作製し、該トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、トランジスタを駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本明細書に開示する半導体装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、デンジタルサイネージ、PID(Public Information Display)、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図11に示す。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
103 ゲート電極
105 ゲート絶縁層
107 微結晶半導体層
113 不純物半導体層
115 レジストマスク
117 微結晶半導体層
121 不純物半導体層
123 プラズマ
124 プラズマ
128 導電層
133 微結晶半導体層
137 絶縁層
139 配線電極
141 半導体積層体
143 半導体積層体
149 開口部
150 微結晶半導体層
151 半導体層
152 微結晶半導体層
155 半導体積層体
200 トランジスタ
201 トランジスタ
203 ゲート電極
301 基板
302 絶縁層
303 ゲート電極
304 ゲート絶縁層
305 微結晶半導体層
307 不純物半導体層
310 半導体層
313 不純物半導体層
315 レジストマスク
317 半導体積層体
323 プラズマ
325 障壁領域
326 障壁領域
327 導電層
329 配線
330 ドレイン領域
337 絶縁層
339 バックゲート電極
341 トランジスタ
400 半導体積層体
115a レジストマスク
126a 障壁領域
126b 障壁領域
127a 障壁領域
128a 障壁領域
128b 障壁領域
129a 配線
129b 配線
131a 不純物半導体層
131b 不純物半導体層
153a 微結晶半導体領域
153b 非晶質半導体領域
160a 微結晶半導体領域
160b 非晶質半導体領域
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカ
306a 微結晶半導体領域
306b 非晶質半導体領域
311a 微結晶半導体層
311b 微結晶半導体領域
311c 非晶質半導体領域
9301 上部筐体
9302 下部筐体
9303 表示部
9304 キーボード
9305 外部接続ポート
9306 ポインティングデバイス
9307 表示部
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
Claims (7)
- ゲート電極を形成し、
前記ゲート電極を覆うゲート絶縁層を形成し、
前記ゲート絶縁層上に半導体層を形成し、
前記半導体層上に不純物半導体層を形成し、
前記不純物半導体層上にマスクを形成した後、前記マスクを用いて前記半導体層及び前記不純物半導体層をエッチングして、半導体積層体を形成し、
前記マスクを除去した後、前記半導体積層体を希ガス雰囲気で発生させたプラズマに曝すことにより、前記半導体積層体の上面及び側面を非晶質化し、
前記プラズマに曝された前記半導体積層体と接する導電層を形成し、
前記導電層、前記半導体積層体における前記不純物半導体層および前記半導体層の一部をエッチングすることで、配線層、ソース領域及びドレイン領域を形成することを特徴とするトランジスタの作製方法。 - ゲート電極を形成し、
前記ゲート電極を覆うゲート絶縁層を形成し、
前記ゲート絶縁層上に半導体層を形成し、
前記半導体層上に不純物半導体層を形成し、
前記不純物半導体層上にマスクを形成した後、前記マスクを用いて前記半導体層及び前記不純物半導体層をエッチングして、半導体積層体を形成し、
前記半導体積層体を酸素ガス雰囲気で発生させたプラズマに曝し、
前記マスクを除去した後、前記半導体積層体を希ガス雰囲気で発生させたプラズマに曝すことにより、前記半導体積層体の上面及び側面を非晶質化し、
前記プラズマに曝された前記半導体積層体と接する導電層を形成し、
前記導電層、前記半導体積層体における前記不純物半導体層および前記半導体層の一部をエッチングすることで、配線層、ソース領域及びドレイン領域を形成することを特徴とするトランジスタの作製方法。 - 請求項1または2において、
前記希ガス雰囲気で発生させたプラズマによる処理は、リンまたはボロンが含まれるガスとの混合ガスで行うことを特徴とするトランジスタの作製方法。 - 請求項1乃至3のいずれか一項において、
前記半導体層のチャネル形成領域となる部分に重畳して、バックゲート電極が設けられていることを特徴とするトランジスタの作製方法。 - 請求項1乃至4のいずれか一項において、
前記半導体層は、前記ゲート絶縁層と接する微結晶半導体層および前記微結晶半導体層と接する非晶質半導体層を含むことを特徴とするトランジスタの作製方法。 - 請求項1乃至5のいずれか一項において、
平面形状において、前記ゲート電極の端部の外側に前記半導体積層体の端部が位置するように、前記半導体層及び前記不純物半導体層をエッチングすることを特徴とするトランジスタの作製方法。 - 請求項1乃至5のいずれか一項において、
平面形状において、前記ゲート電極の端部の内側に前記半導体積層体の端部が位置するように、前記半導体層及び前記不純物半導体層をエッチングすることを特徴とするトランジスタの作製方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011214628A JP5963414B2 (ja) | 2010-10-01 | 2011-09-29 | トランジスタの作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010223447 | 2010-10-01 | ||
JP2010223447 | 2010-10-01 | ||
JP2011214628A JP5963414B2 (ja) | 2010-10-01 | 2011-09-29 | トランジスタの作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012094851A JP2012094851A (ja) | 2012-05-17 |
JP5963414B2 true JP5963414B2 (ja) | 2016-08-03 |
Family
ID=45890158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011214628A Expired - Fee Related JP5963414B2 (ja) | 2010-10-01 | 2011-09-29 | トランジスタの作製方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8338240B2 (ja) |
JP (1) | JP5963414B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8338240B2 (en) * | 2010-10-01 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing transistor |
JP6059968B2 (ja) | 2011-11-25 | 2017-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置、及び液晶表示装置 |
KR20130066247A (ko) * | 2011-12-12 | 2013-06-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
US20140374744A1 (en) * | 2013-06-19 | 2014-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2015181679A1 (en) * | 2014-05-27 | 2015-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
Family Cites Families (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5091334A (en) | 1980-03-03 | 1992-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JPS56122123A (en) | 1980-03-03 | 1981-09-25 | Shunpei Yamazaki | Semiamorphous semiconductor |
JPS5771126A (en) | 1980-10-21 | 1982-05-01 | Semiconductor Energy Lab Co Ltd | Semiamorhous semiconductor |
JPS5892217A (ja) | 1981-11-28 | 1983-06-01 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
JPS5972781A (ja) | 1982-10-20 | 1984-04-24 | Semiconductor Energy Lab Co Ltd | 光電変換半導体装置 |
JP2752983B2 (ja) * | 1988-03-30 | 1998-05-18 | 株式会社東芝 | 液晶表示用薄膜トランジスタの製造方法 |
JPH01259565A (ja) * | 1988-04-11 | 1989-10-17 | Hitachi Ltd | 薄膜トランジスタおよびその製造方法 |
JP2839529B2 (ja) | 1989-02-17 | 1998-12-16 | 株式会社東芝 | 薄膜トランジスタ |
US5221631A (en) | 1989-02-17 | 1993-06-22 | International Business Machines Corporation | Method of fabricating a thin film transistor having a silicon carbide buffer layer |
JPH03278466A (ja) | 1990-03-27 | 1991-12-10 | Toshiba Corp | 薄膜トランジスタおよびその製造方法 |
EP0449539B1 (en) | 1990-03-27 | 1996-07-03 | Kabushiki Kaisha Toshiba | Ohmic contact for thin film transistor |
US5849601A (en) | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US7115902B1 (en) | 1990-11-20 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
KR950013784B1 (ko) | 1990-11-20 | 1995-11-16 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터 |
US5514879A (en) | 1990-11-20 | 1996-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Gate insulated field effect transistors and method of manufacturing the same |
US7098479B1 (en) | 1990-12-25 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
JPH04266019A (ja) | 1991-02-20 | 1992-09-22 | Canon Inc | 成膜方法 |
JP3255942B2 (ja) | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
EP0535979A3 (en) | 1991-10-02 | 1993-07-21 | Sharp Kabushiki Kaisha | A thin film transistor and a method for producing the same |
JPH05129608A (ja) | 1991-10-31 | 1993-05-25 | Sharp Corp | 半導体装置 |
US6835523B1 (en) | 1993-05-09 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
JPH06326314A (ja) * | 1993-05-12 | 1994-11-25 | Hitachi Ltd | 薄膜トランジスタおよびその製造方法 |
JPH06326312A (ja) | 1993-05-14 | 1994-11-25 | Toshiba Corp | アクティブマトリクス型表示装置 |
JP3157985B2 (ja) | 1993-06-10 | 2001-04-23 | 三菱電機株式会社 | 薄膜トランジスタおよびその製造方法 |
US5932302A (en) | 1993-07-20 | 1999-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating with ultrasonic vibration a carbon coating |
JPH07131030A (ja) | 1993-11-05 | 1995-05-19 | Sony Corp | 表示用薄膜半導体装置及びその製造方法 |
JPH07263702A (ja) * | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
FR2719416B1 (fr) * | 1994-04-29 | 1996-07-05 | Thomson Lcd | Procédé de passivation des flancs d'un composant semiconducteur à couches minces. |
JP3197431B2 (ja) * | 1994-05-26 | 2001-08-13 | 株式会社半導体エネルギー研究所 | 半導体装置作製方法、半導体装置、電気光学装置の作製方法、電気光学装置および液晶表示装置 |
TW303526B (ja) | 1994-12-27 | 1997-04-21 | Matsushita Electric Ind Co Ltd | |
US5677236A (en) | 1995-02-24 | 1997-10-14 | Mitsui Toatsu Chemicals, Inc. | Process for forming a thin microcrystalline silicon semiconductor film |
US5920772A (en) | 1997-06-27 | 1999-07-06 | Industrial Technology Research Institute | Method of fabricating a hybrid polysilicon/amorphous silicon TFT |
US5998229A (en) * | 1998-01-30 | 1999-12-07 | Samsung Electronics Co., Ltd. | Methods of manufacturing thin film transistors and liquid crystal displays by plasma treatment of undoped amorphous silicon |
US6372535B1 (en) * | 1998-02-02 | 2002-04-16 | Samsung Electronics Co., Ltd. | Manufacturing method of a thin film transistor |
JP4458563B2 (ja) * | 1998-03-31 | 2010-04-28 | 三菱電機株式会社 | 薄膜トランジスタの製造方法およびこれを用いた液晶表示装置の製造方法 |
JP2000077665A (ja) | 1998-08-27 | 2000-03-14 | Toshiba Corp | 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法 |
JP3353832B2 (ja) | 1998-11-17 | 2002-12-03 | 日本電気株式会社 | 薄膜トランジスタの製造方法及び製造装置 |
US6579749B2 (en) | 1998-11-17 | 2003-06-17 | Nec Corporation | Fabrication method and fabrication apparatus for thin film transistor |
TW405269B (en) * | 1999-02-09 | 2000-09-11 | Ind Tech Res Inst | Manufacture method of thin film transistor |
JP2000277439A (ja) | 1999-03-25 | 2000-10-06 | Kanegafuchi Chem Ind Co Ltd | 結晶質シリコン系薄膜のプラズマcvd方法およびシリコン系薄膜光電変換装置の製造方法 |
JP2001007024A (ja) | 1999-06-18 | 2001-01-12 | Sanyo Electric Co Ltd | 多結晶シリコン膜の形成方法 |
JP2001053283A (ja) | 1999-08-12 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2001228477A (ja) * | 2000-02-15 | 2001-08-24 | Sakae Tanaka | 液晶表示素子の製造方法とバックライト |
GB0017471D0 (en) | 2000-07-18 | 2000-08-30 | Koninkl Philips Electronics Nv | Thin film transistors and their manufacture |
JP2002057343A (ja) * | 2000-08-10 | 2002-02-22 | Nec Kagoshima Ltd | 薄膜トランジスタの製造方法 |
KR100421480B1 (ko) * | 2001-06-01 | 2004-03-12 | 엘지.필립스 엘시디 주식회사 | 유기절연막의 표면처리 방법 및 그를 이용한박막트랜지스터 기판 제조방법 |
JP4073671B2 (ja) * | 2002-01-16 | 2008-04-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法及び表示装置の作製方法 |
KR100436181B1 (ko) | 2002-04-16 | 2004-06-12 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판 제조방법 |
JP2004014958A (ja) | 2002-06-11 | 2004-01-15 | Fuji Electric Holdings Co Ltd | 薄膜多結晶太陽電池とその製造方法 |
US6841431B2 (en) * | 2003-01-29 | 2005-01-11 | Chunghwa Picture Tubes, Ltd. | Method for reducing the contact resistance |
JP4869601B2 (ja) | 2003-03-26 | 2012-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置および半導体装置の作製方法 |
JP4748954B2 (ja) | 2003-07-14 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP2005050905A (ja) | 2003-07-30 | 2005-02-24 | Sharp Corp | シリコン薄膜太陽電池の製造方法 |
JP5159021B2 (ja) | 2003-12-02 | 2013-03-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
EP1537938A3 (en) | 2003-12-02 | 2009-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
JP2005167051A (ja) | 2003-12-04 | 2005-06-23 | Sony Corp | 薄膜トランジスタおよび薄膜トランジスタの製造方法 |
JP2005302752A (ja) * | 2004-04-06 | 2005-10-27 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
JP4299717B2 (ja) * | 2004-04-14 | 2009-07-22 | Nec液晶テクノロジー株式会社 | 薄膜トランジスタとその製造方法 |
US7229863B2 (en) * | 2005-10-25 | 2007-06-12 | Chunghwa Picture Tubes, Ltd. | Method for fabricating thin film transistors |
JP2008124392A (ja) | 2006-11-15 | 2008-05-29 | Sharp Corp | 半導体装置、その製造方法及び表示装置 |
JP5395382B2 (ja) * | 2007-08-07 | 2014-01-22 | 株式会社半導体エネルギー研究所 | トランジスタの作製方法 |
JP5331407B2 (ja) * | 2007-08-17 | 2013-10-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9054206B2 (en) * | 2007-08-17 | 2015-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8101444B2 (en) * | 2007-08-17 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US7611930B2 (en) * | 2007-08-17 | 2009-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing display device |
JP5311955B2 (ja) | 2007-11-01 | 2013-10-09 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
US8591650B2 (en) * | 2007-12-03 | 2013-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming crystalline semiconductor film, method for manufacturing thin film transistor, and method for manufacturing display device |
JP5416460B2 (ja) | 2008-04-18 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタおよび薄膜トランジスタの作製方法 |
WO2009157574A1 (en) | 2008-06-27 | 2009-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
US8258511B2 (en) * | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
JP5414213B2 (ja) * | 2008-07-18 | 2014-02-12 | 株式会社ジャパンディスプレイ | 画像表示装置およびその製造方法 |
US9082857B2 (en) * | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
JP5590868B2 (ja) * | 2008-12-11 | 2014-09-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR101650917B1 (ko) | 2009-03-09 | 2016-08-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 |
US8343858B2 (en) * | 2010-03-02 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device |
US8338240B2 (en) * | 2010-10-01 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing transistor |
-
2011
- 2011-09-20 US US13/236,837 patent/US8338240B2/en active Active
- 2011-09-29 JP JP2011214628A patent/JP5963414B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2012094851A (ja) | 2012-05-17 |
US20120083078A1 (en) | 2012-04-05 |
US8338240B2 (en) | 2012-12-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5700637B2 (ja) | トランジスタ | |
JP5808589B2 (ja) | 微結晶半導体膜の作製方法、及び半導体装置の作製方法 | |
JP5700785B2 (ja) | トランジスタ | |
JP5700638B2 (ja) | トランジスタ | |
US8916425B2 (en) | Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device | |
JP5775322B2 (ja) | 半導体装置及びその作製方法 | |
JP5774410B2 (ja) | 微結晶半導体膜の作製方法、及び半導体装置の作製方法 | |
JP5785770B2 (ja) | 微結晶半導体膜の作製方法、及び半導体装置の作製方法 | |
JP5897828B2 (ja) | 半導体装置 | |
JP5823821B2 (ja) | 微結晶半導体膜の作製方法、及び半導体装置の作製方法 | |
JP5709579B2 (ja) | 微結晶半導体膜の作製方法 | |
JP5963414B2 (ja) | トランジスタの作製方法 | |
JP5752446B2 (ja) | 半導体装置 | |
JP5752447B2 (ja) | 半導体装置 | |
JP5961391B2 (ja) | 半導体装置の作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140910 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150914 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151027 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151116 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160531 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160628 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5963414 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |