JP5914153B2 - 論理回路 - Google Patents

論理回路 Download PDF

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Publication number
JP5914153B2
JP5914153B2 JP2012110283A JP2012110283A JP5914153B2 JP 5914153 B2 JP5914153 B2 JP 5914153B2 JP 2012110283 A JP2012110283 A JP 2012110283A JP 2012110283 A JP2012110283 A JP 2012110283A JP 5914153 B2 JP5914153 B2 JP 5914153B2
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JP
Japan
Prior art keywords
transistor
oxide
film
oxide semiconductor
insulating film
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JP2012110283A
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English (en)
Japanese (ja)
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JP2012257215A (ja
JP2012257215A5 (enExample
Inventor
善也 武分
善也 武分
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2012110283A priority Critical patent/JP5914153B2/ja
Publication of JP2012257215A publication Critical patent/JP2012257215A/ja
Publication of JP2012257215A5 publication Critical patent/JP2012257215A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/017581—Coupling arrangements; Interface arrangements programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/17748—Structural details of configuration resources
    • H03K19/1776—Structural details of configuration resources for memories
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/17748—Structural details of configuration resources
    • H03K19/17772—Structural details of configuration resources for powering on or off
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2012110283A 2011-05-19 2012-05-14 論理回路 Active JP5914153B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012110283A JP5914153B2 (ja) 2011-05-19 2012-05-14 論理回路

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011112804 2011-05-19
JP2011112804 2011-05-19
JP2012110283A JP5914153B2 (ja) 2011-05-19 2012-05-14 論理回路

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016075009A Division JP6637367B2 (ja) 2011-05-19 2016-04-04 プログラマブルロジックデバイス

Publications (3)

Publication Number Publication Date
JP2012257215A JP2012257215A (ja) 2012-12-27
JP2012257215A5 JP2012257215A5 (enExample) 2015-06-25
JP5914153B2 true JP5914153B2 (ja) 2016-05-11

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
JP2012110283A Active JP5914153B2 (ja) 2011-05-19 2012-05-14 論理回路
JP2016075009A Expired - Fee Related JP6637367B2 (ja) 2011-05-19 2016-04-04 プログラマブルロジックデバイス
JP2019161190A Withdrawn JP2020022168A (ja) 2011-05-19 2019-09-04 プログラマブルロジックデバイス

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2016075009A Expired - Fee Related JP6637367B2 (ja) 2011-05-19 2016-04-04 プログラマブルロジックデバイス
JP2019161190A Withdrawn JP2020022168A (ja) 2011-05-19 2019-09-04 プログラマブルロジックデバイス

Country Status (3)

Country Link
US (2) US8779799B2 (enExample)
JP (3) JP5914153B2 (enExample)
KR (1) KR101854869B1 (enExample)

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US9467047B2 (en) * 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
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CN104321967B (zh) 2012-05-25 2018-01-09 株式会社半导体能源研究所 可编程逻辑装置及半导体装置
JP6377317B2 (ja) 2012-05-30 2018-08-22 株式会社半導体エネルギー研究所 プログラマブルロジックデバイス
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WO2014061567A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
TWI591966B (zh) 2012-10-17 2017-07-11 半導體能源研究所股份有限公司 可編程邏輯裝置及可編程邏輯裝置的驅動方法
KR20150085035A (ko) 2012-11-15 2015-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 디스플레이 장치
JP6254834B2 (ja) 2012-12-06 2017-12-27 株式会社半導体エネルギー研究所 半導体装置
US8952723B2 (en) * 2013-02-13 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9704886B2 (en) 2013-05-16 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Signal processing device
JP6473626B2 (ja) 2014-02-06 2019-02-20 株式会社半導体エネルギー研究所 半導体装置
JP6625328B2 (ja) 2014-03-06 2019-12-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP6541376B2 (ja) 2014-03-13 2019-07-10 株式会社半導体エネルギー研究所 プログラマブルロジックデバイスの動作方法
TWI643457B (zh) 2014-04-25 2018-12-01 日商半導體能源研究所股份有限公司 半導體裝置
TW201614626A (en) 2014-09-05 2016-04-16 Semiconductor Energy Lab Display device and electronic device
CN107003582A (zh) 2014-12-01 2017-08-01 株式会社半导体能源研究所 显示装置、包括该显示装置的显示模块以及包括该显示装置或该显示模块的电子设备
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CN109565280B (zh) 2016-08-19 2023-02-17 株式会社半导体能源研究所 半导体装置的电源控制方法
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US11728794B2 (en) * 2021-12-03 2023-08-15 Nanya Technology Corporation Data receiving circuit
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