JP5869811B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5869811B2 JP5869811B2 JP2011198077A JP2011198077A JP5869811B2 JP 5869811 B2 JP5869811 B2 JP 5869811B2 JP 2011198077 A JP2011198077 A JP 2011198077A JP 2011198077 A JP2011198077 A JP 2011198077A JP 5869811 B2 JP5869811 B2 JP 5869811B2
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- Prior art keywords
- oxide semiconductor
- transistor
- electrode
- gate electrode
- film
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
Description
図1(B)に示す酸化物半導体トランジスタ100は、絶縁表面を有する基板101上に形成されている。酸化物半導体トランジスタ100は、第1のゲート電極であるゲート電極102a、第2のゲート電極であるゲート電極102b、ゲート絶縁膜123、第1の酸化物半導体膜である酸化物半導体膜104、ソース電極又はドレイン電極の一方である電極105a、ソース電極又はドレイン電極の他方である電極105bを有している。
図2(A)〜図2(C)に、Loff領域を設けない酸化物半導体トランジスタ110及びLoff領域109を設けた酸化物半導体トランジスタ100の上面図と断面図を示す。
本実施の形態では、本発明の一態様に係る表示装置として、発光表示装置の例を示す。表示装置の有する表示素子としては、ここではエレクトロルミネッセンスを利用する発光素子を用いて示す。エレクトロルミネッセンスを利用する発光素子は、発光材料が有機化合物であるか、無機化合物であるかによって区別され、一般的に、前者は有機EL素子、後者は無機EL素子と呼ばれている。
図7(A)及び図7(B)は、本実施の形態の表示装置の一形態である表示パネルの上面図及び断面図である。図7(B)は、図7(A)のC−C’の断面図に相当する。
101 基板
102a ゲート電極
102b ゲート電極
104 酸化物半導体膜
105a 電極
105b 電極
107 電極
108 電極
109 Loff領域
110 酸化物半導体トランジスタ
112 ゲート電極
114 酸化物半導体膜
115a 電極
115b 電極
123 ゲート絶縁膜
124 酸化物半導体膜
125 導電膜
126 絶縁膜
127 絶縁膜
128 隔壁
131 画素部
132 ゲートドライバ
132a ゲートドライバ
132b ゲートドライバ
133 ゲート線
134 ソースドライバ
134a ソースドライバ
134b ソースドライバ
135 ソース線
136 画素
137 電源線
141 トランジスタ
142 トランジスタ
143 容量素子
144 発光素子
152 発光層
153 電極
154 電極
155 遮蔽膜
161 基板
162 シール材
165 接続端子
166 配線
167a FPC
167b FPC
168 異方性導電膜
169 充填材
Claims (4)
- 絶縁表面上の、第1のゲート電極及び第2のゲート電極と、
ゲート絶縁膜を介して、前記第1のゲート電極と重なる第1の領域と、前記第2のゲート電極と重なる第2の領域と、前記第1のゲート電極及び第2のゲート電極と重ならず前記第1の領域及び前記第2の領域の間にある第3の領域と、を有する酸化物半導体膜と、
前記第1のゲート電極の一部及び前記酸化物半導体膜の一部と重なるソース電極と、
前記第2のゲート電極の一部及び前記酸化物半導体膜の一部と重なるドレイン電極と、
前記ゲート絶縁膜、前記第1のゲート電極、前記第2のゲート電極、前記酸化物半導体膜、前記ソース電極、及び前記ドレイン電極上の、絶縁膜と、
を有し、
前記絶縁膜は、前記第3の領域と接することを特徴とする半導体装置。 - 絶縁表面上の、第1のトランジスタ及び第2のトランジスタを有する半導体装置であり、
前記第1のトランジスタは、
前記絶縁表面上の、第1のゲート電極及び第2のゲート電極と、
ゲート絶縁膜を介して、前記第1のゲート電極と重なる第1の領域と、前記第2のゲート電極と重なる第2の領域と、前記第1のゲート電極及び第2のゲート電極と重ならず前記第1の領域及び前記第2の領域の間にある第3の領域と、を有する第1の酸化物半導体膜と、
前記第1のゲート電極の一部及び前記第1の酸化物半導体膜の一部と重なる第1のソース電極と、
前記第2のゲート電極の一部及び前記第1の酸化物半導体膜の一部と重なる第1のドレイン電極と、
前記ゲート絶縁膜、前記第1のゲート電極、前記第2のゲート電極、前記第1の酸化物半導体膜、前記第1のソース電極、及び第1のドレイン電極上の、絶縁膜と、
を有し、
前記第2のトランジスタは、
前記絶縁表面上の、第3のゲート電極と、
前記ゲート絶縁膜を介して、前記第3のゲート電極と重なる領域を有する第2の酸化物半導体膜と、
前記第3のゲート電極の一部及び前記第2の酸化物半導体膜の一部と重なる第2のソース電極及び第2のドレイン電極と、
前記ゲート絶縁膜、前記第3のゲート電極、前記第2の酸化物半導体膜、前記第2のソース電極、及び前記第2のドレイン電極上の、前記絶縁膜と、
を有し、
前記絶縁膜は、前記第3の領域と接することを特徴とする半導体装置。 - 請求項2において、
前記絶縁表面上に、複数の画素を有する画素部、及び、前記画素部を駆動する駆動回路を有し、
前記複数の画素はそれぞれ、発光素子と、前記発光素子の電流を制御する電流制御素子と、前記電流制御素子のオン及びオフを制御するスイッチング素子とを有し、
前記第1のトランジスタは、前記電流制御素子としての機能を有することを特徴とする半導体装置。 - 請求項2において、
前記絶縁表面上に、複数の画素を有する画素部、及び、前記画素部を駆動する駆動回路を有し、
前記複数の画素はそれぞれ前記第1のトランジスタを有し、
前記駆動回路は前記第2のトランジスタを有することを特徴とする半導体装置。
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-
2011
- 2011-08-25 KR KR1020137009088A patent/KR101426515B1/ko active IP Right Grant
- 2011-08-25 WO PCT/JP2011/069855 patent/WO2012035984A1/en active Application Filing
- 2011-08-25 KR KR1020147010616A patent/KR20140054465A/ko not_active Application Discontinuation
- 2011-09-09 US US13/228,495 patent/US8405092B2/en active Active
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JP2012084864A (ja) | 2012-04-26 |
KR20140054465A (ko) | 2014-05-08 |
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TW201230341A (en) | 2012-07-16 |
US8405092B2 (en) | 2013-03-26 |
JP2018029188A (ja) | 2018-02-22 |
JP6509978B2 (ja) | 2019-05-08 |
US20130168670A1 (en) | 2013-07-04 |
WO2012035984A1 (en) | 2012-03-22 |
US8884302B2 (en) | 2014-11-11 |
US20120061666A1 (en) | 2012-03-15 |
TWI573279B (zh) | 2017-03-01 |
JP2019165228A (ja) | 2019-09-26 |
KR20130105856A (ko) | 2013-09-26 |
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