JP5635432B2 - 光電素子及びその製造方法 - Google Patents

光電素子及びその製造方法 Download PDF

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JP5635432B2
JP5635432B2 JP2011022205A JP2011022205A JP5635432B2 JP 5635432 B2 JP5635432 B2 JP 5635432B2 JP 2011022205 A JP2011022205 A JP 2011022205A JP 2011022205 A JP2011022205 A JP 2011022205A JP 5635432 B2 JP5635432 B2 JP 5635432B2
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layer
window layer
semiconductor
photoelectric
substrate
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JP2011166139A5 (enExample
JP2011166139A (ja
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シィ−アイ，チェン
チア−リアン，シュウ
チエ，シュウ ツゥ
チエ，シュウ ツゥ
チュン−イー，ウ
フ，ファン チェン
フ，ファン チェン
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Epistar Corp
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Epistar Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP2011022205A 2010-02-09 2011-02-04 光電素子及びその製造方法 Active JP5635432B2 (ja)

Applications Claiming Priority (2)

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US30266210P 2010-02-09 2010-02-09
US61/302,662 2010-02-09

Related Child Applications (1)

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JP2014211281A Division JP5908558B2 (ja) 2010-02-09 2014-10-16 光電素子及びその製造方法

Publications (3)

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JP2011166139A JP2011166139A (ja) 2011-08-25
JP2011166139A5 JP2011166139A5 (enExample) 2014-03-20
JP5635432B2 true JP5635432B2 (ja) 2014-12-03

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JP2011022205A Active JP5635432B2 (ja) 2010-02-09 2011-02-04 光電素子及びその製造方法
JP2014211281A Active JP5908558B2 (ja) 2010-02-09 2014-10-16 光電素子及びその製造方法
JP2016057950A Pending JP2016154244A (ja) 2010-02-09 2016-03-23 光電素子及びその製造方法
JP2017233869A Pending JP2018056586A (ja) 2010-02-09 2017-12-06 光電素子及びその製造方法
JP2019140478A Active JP6917417B2 (ja) 2010-02-09 2019-07-31 光電素子及びその製造方法

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JP2014211281A Active JP5908558B2 (ja) 2010-02-09 2014-10-16 光電素子及びその製造方法
JP2016057950A Pending JP2016154244A (ja) 2010-02-09 2016-03-23 光電素子及びその製造方法
JP2017233869A Pending JP2018056586A (ja) 2010-02-09 2017-12-06 光電素子及びその製造方法
JP2019140478A Active JP6917417B2 (ja) 2010-02-09 2019-07-31 光電素子及びその製造方法

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US (2) US8207550B2 (enExample)
JP (5) JP5635432B2 (enExample)
KR (2) KR101280400B1 (enExample)
CN (2) CN103715320B (enExample)
DE (1) DE102011010629B4 (enExample)
TW (6) TWI395352B (enExample)

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TW201334219A (zh) 2013-08-16
CN103715320B (zh) 2017-06-13
US8207550B2 (en) 2012-06-26
JP2016154244A (ja) 2016-08-25
JP2018056586A (ja) 2018-04-05
JP5908558B2 (ja) 2016-04-26
KR101280400B1 (ko) 2013-07-01
TW201719931A (zh) 2017-06-01
US20110193119A1 (en) 2011-08-11
TWI580068B (zh) 2017-04-21
TWI513040B (zh) 2015-12-11
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US8474233B2 (en) 2013-07-02
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JP2019216254A (ja) 2019-12-19
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DE102011010629B4 (de) 2021-02-25
TWI762930B (zh) 2022-05-01
KR101290629B1 (ko) 2013-07-29
JP2015039022A (ja) 2015-02-26
JP6917417B2 (ja) 2021-08-11
CN102148301A (zh) 2011-08-10
TWI697133B (zh) 2020-06-21
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US20120256164A1 (en) 2012-10-11

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