KR101280400B1 - 광전 소자 및 그 제조방법 - Google Patents

광전 소자 및 그 제조방법 Download PDF

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KR101280400B1
KR101280400B1 KR1020110011432A KR20110011432A KR101280400B1 KR 101280400 B1 KR101280400 B1 KR 101280400B1 KR 1020110011432 A KR1020110011432 A KR 1020110011432A KR 20110011432 A KR20110011432 A KR 20110011432A KR 101280400 B1 KR101280400 B1 KR 101280400B1
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window
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substrate
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KR20110093672A (ko
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시-이 첸
치아-리앙 슈
추 치에 슈
춘-이 우
치엔-푸 황
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에피스타 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
KR1020110011432A 2010-02-09 2011-02-09 광전 소자 및 그 제조방법 Active KR101280400B1 (ko)

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US30266210P 2010-02-09 2010-02-09
US61/302,662 2010-02-09

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KR101280400B1 true KR101280400B1 (ko) 2013-07-01

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US (2) US8207550B2 (enExample)
JP (5) JP5635432B2 (enExample)
KR (2) KR101280400B1 (enExample)
CN (2) CN103715320B (enExample)
DE (1) DE102011010629B4 (enExample)
TW (6) TWI513040B (enExample)

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CN108054261A (zh) * 2012-02-14 2018-05-18 晶元光电股份有限公司 具有平整表面的电流扩散层的发光元件
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TWI591848B (zh) 2013-11-28 2017-07-11 晶元光電股份有限公司 發光元件及其製造方法
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CN103872203A (zh) * 2014-04-08 2014-06-18 三安光电股份有限公司 具有表面微结构的高亮度发光二极管及其制备和筛选方法
KR102153111B1 (ko) * 2014-04-10 2020-09-07 엘지이노텍 주식회사 발광소자
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KR102237105B1 (ko) * 2014-05-30 2021-04-08 엘지이노텍 주식회사 발광소자
KR102164070B1 (ko) * 2014-05-30 2020-10-12 엘지이노텍 주식회사 발광소자
KR102199995B1 (ko) * 2014-06-02 2021-01-11 엘지이노텍 주식회사 발광소자
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JP6468459B2 (ja) * 2015-03-31 2019-02-13 ウシオ電機株式会社 半導体発光素子
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CN105428485B (zh) * 2015-12-21 2019-06-21 扬州乾照光电有限公司 GaP表面粗化的AlGaInP基LED及其制造方法
JP6332301B2 (ja) * 2016-02-25 2018-05-30 日亜化学工業株式会社 発光素子
CN105914274A (zh) * 2016-06-13 2016-08-31 南昌凯迅光电有限公司 一种侧壁粗化高亮度发光二极管及其制备方法
TWI622188B (zh) 2016-12-08 2018-04-21 錼創科技股份有限公司 發光二極體晶片
CN106784223B (zh) * 2016-12-22 2019-05-14 天津三安光电有限公司 发光二极管及其制作方法
TWI626766B (zh) * 2017-06-01 2018-06-11 錼創科技股份有限公司 發光元件
CN109830498B (zh) * 2019-01-17 2022-07-19 泉州三安半导体科技有限公司 一种半导体发光元件
CN112152085B (zh) * 2020-11-24 2021-02-12 度亘激光技术（苏州）有限公司 半导体结构的制备方法、半导体结构和半导体器件
CN112885718B (zh) * 2021-01-20 2022-07-05 厦门乾照光电股份有限公司 一种复合导电薄膜的制备方法
KR102629307B1 (ko) * 2022-04-26 2024-01-29 숭실대학교산학협력단 질화물 반도체 소자의 제조방법
CN115458647B (zh) * 2022-10-31 2025-08-19 天津三安光电有限公司 一种垂直led芯片结构及其制造方法及发光装置
KR102721221B1 (ko) * 2023-05-30 2024-10-24 웨이브로드 주식회사 반도체 소자용 템플릿을 이용한 반도체 적층체 및 그 제조 방법
KR102722728B1 (ko) * 2023-07-21 2024-10-28 웨이브로드 주식회사 마이크로 led 디스플레이용 칩 온 웨이퍼의 제조 방법
KR102740260B1 (ko) * 2023-12-19 2024-12-10 웨이브로드 주식회사 마이크로 led 디스플레이용 칩 온 웨이퍼의 제조 방법
CN119108471B (zh) * 2024-11-08 2025-06-27 南昌凯迅光电股份有限公司 一种红光led芯片及其制作方法

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