TWI513040B - 光電元件及其製造方法 - Google Patents
光電元件及其製造方法 Download PDFInfo
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- TWI513040B TWI513040B TW102105143A TW102105143A TWI513040B TW I513040 B TWI513040 B TW I513040B TW 102105143 A TW102105143 A TW 102105143A TW 102105143 A TW102105143 A TW 102105143A TW I513040 B TWI513040 B TW I513040B
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- 238000004519 manufacturing process Methods 0.000 title description 4
- 239000004065 semiconductor Substances 0.000 claims description 41
- 230000005693 optoelectronics Effects 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 22
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 164
- 239000000463 material Substances 0.000 description 24
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 238000005275 alloying Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229960000583 acetic acid Drugs 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- 101001034843 Mus musculus Interferon-induced transmembrane protein 1 Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- GPYPVKIFOKLUGD-UHFFFAOYSA-N gold indium Chemical compound [In].[Au] GPYPVKIFOKLUGD-UHFFFAOYSA-N 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/833—Transparent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
Landscapes
- Led Devices (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US30266210P | 2010-02-09 | 2010-02-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201334219A TW201334219A (zh) | 2013-08-16 |
| TWI513040B true TWI513040B (zh) | 2015-12-11 |
Family
ID=44352986
Family Applications (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100104064A TWI395352B (zh) | 2010-02-09 | 2011-02-01 | 光電元件及其製造方法 |
| TW109116376A TWI762930B (zh) | 2010-02-09 | 2011-02-01 | 光電元件 |
| TW106106031A TWI609505B (zh) | 2010-02-09 | 2011-02-01 | 光電元件 |
| TW102105143A TWI513040B (zh) | 2010-02-09 | 2011-02-01 | 光電元件及其製造方法 |
| TW106139186A TWI697133B (zh) | 2010-02-09 | 2011-02-01 | 光電元件 |
| TW104136135A TWI580068B (zh) | 2010-02-09 | 2011-02-01 | 光電元件 |
Family Applications Before (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100104064A TWI395352B (zh) | 2010-02-09 | 2011-02-01 | 光電元件及其製造方法 |
| TW109116376A TWI762930B (zh) | 2010-02-09 | 2011-02-01 | 光電元件 |
| TW106106031A TWI609505B (zh) | 2010-02-09 | 2011-02-01 | 光電元件 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106139186A TWI697133B (zh) | 2010-02-09 | 2011-02-01 | 光電元件 |
| TW104136135A TWI580068B (zh) | 2010-02-09 | 2011-02-01 | 光電元件 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8207550B2 (enExample) |
| JP (5) | JP5635432B2 (enExample) |
| KR (2) | KR101280400B1 (enExample) |
| CN (2) | CN103715320B (enExample) |
| DE (1) | DE102011010629B4 (enExample) |
| TW (6) | TWI395352B (enExample) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090022700A (ko) * | 2007-08-31 | 2009-03-04 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| US7985979B2 (en) | 2007-12-19 | 2011-07-26 | Koninklijke Philips Electronics, N.V. | Semiconductor light emitting device with light extraction structures |
| US10205059B2 (en) | 2010-02-09 | 2019-02-12 | Epistar Corporation | Optoelectronic device and the manufacturing method thereof |
| TWI395352B (zh) * | 2010-02-09 | 2013-05-01 | Epistar Corp | 光電元件及其製造方法 |
| US9640728B2 (en) | 2010-02-09 | 2017-05-02 | Epistar Corporation | Optoelectronic device and the manufacturing method thereof |
| JP5727271B2 (ja) * | 2011-03-24 | 2015-06-03 | スタンレー電気株式会社 | 半導体発光素子 |
| TWI458122B (zh) * | 2011-11-23 | 2014-10-21 | Toshiba Kk | 半導體發光元件 |
| KR101984698B1 (ko) * | 2012-01-11 | 2019-05-31 | 삼성전자주식회사 | 기판 구조체, 이로부터 제조된 반도체소자 및 그 제조방법 |
| CN108054261A (zh) * | 2012-02-14 | 2018-05-18 | 晶元光电股份有限公司 | 具有平整表面的电流扩散层的发光元件 |
| US20130234149A1 (en) * | 2012-03-09 | 2013-09-12 | Electro Scientific Industries, Inc. | Sidewall texturing of light emitting diode structures |
| CN103367561B (zh) * | 2012-03-30 | 2016-08-17 | 清华大学 | 发光二极管的制备方法 |
| CN103367383B (zh) | 2012-03-30 | 2016-04-13 | 清华大学 | 发光二极管 |
| CN103367585B (zh) | 2012-03-30 | 2016-04-13 | 清华大学 | 发光二极管 |
| CA3093332C (en) | 2012-06-08 | 2022-05-17 | Wulftec International Inc. | Apparatuses for wrapping a load and supplying film for wrapping a load and associated methods |
| KR101393605B1 (ko) * | 2012-08-01 | 2014-05-09 | 광전자 주식회사 | 요철형 질화갈륨층을 가진 알루미늄갈륨인듐인계 발광다이오드 및 그 제조 방법 |
| KR101412142B1 (ko) * | 2012-09-13 | 2014-06-25 | 광전자 주식회사 | 엔형 질화갈륨 윈도우층을 가진 알루미늄갈륨인듐인계 발광다이오드 및 그 제조 방법 |
| TWI591848B (zh) | 2013-11-28 | 2017-07-11 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
| EP3084813A4 (en) * | 2013-12-18 | 2017-07-26 | Intel Corporation | Partial layer transfer system and method |
| TWI552382B (zh) * | 2014-01-24 | 2016-10-01 | 隆達電子股份有限公司 | 發光二極體裝置及其製造方法 |
| CN103872203A (zh) * | 2014-04-08 | 2014-06-18 | 三安光电股份有限公司 | 具有表面微结构的高亮度发光二极管及其制备和筛选方法 |
| KR102153111B1 (ko) * | 2014-04-10 | 2020-09-07 | 엘지이노텍 주식회사 | 발광소자 |
| US10043947B2 (en) * | 2014-05-08 | 2018-08-07 | Lg Innotek Co., Ltd. | Light emitting device |
| JP6595801B2 (ja) * | 2014-05-30 | 2019-10-23 | エルジー イノテック カンパニー リミテッド | 発光素子 |
| KR102164070B1 (ko) * | 2014-05-30 | 2020-10-12 | 엘지이노텍 주식회사 | 발광소자 |
| KR102237105B1 (ko) * | 2014-05-30 | 2021-04-08 | 엘지이노텍 주식회사 | 발광소자 |
| KR102199995B1 (ko) * | 2014-06-02 | 2021-01-11 | 엘지이노텍 주식회사 | 발광소자 |
| JP6245380B2 (ja) | 2014-11-07 | 2017-12-13 | 信越半導体株式会社 | 発光素子及び発光素子の製造方法 |
| US9871171B2 (en) * | 2014-11-07 | 2018-01-16 | Epistar Corporation | Light-emitting device and manufacturing method thereof |
| JP6468459B2 (ja) * | 2015-03-31 | 2019-02-13 | ウシオ電機株式会社 | 半導体発光素子 |
| JP6650143B2 (ja) | 2015-09-30 | 2020-02-19 | ローム株式会社 | 半導体発光素子 |
| US9847454B2 (en) * | 2015-10-02 | 2017-12-19 | Epistar Corporation | Light-emitting device |
| CN105185883B (zh) * | 2015-10-12 | 2019-05-10 | 扬州乾照光电有限公司 | 侧壁粗化的AlGaInP基LED及其制造方法 |
| CN105428485B (zh) * | 2015-12-21 | 2019-06-21 | 扬州乾照光电有限公司 | GaP表面粗化的AlGaInP基LED及其制造方法 |
| JP6332301B2 (ja) * | 2016-02-25 | 2018-05-30 | 日亜化学工業株式会社 | 発光素子 |
| CN105914274A (zh) * | 2016-06-13 | 2016-08-31 | 南昌凯迅光电有限公司 | 一种侧壁粗化高亮度发光二极管及其制备方法 |
| TWI622188B (zh) * | 2016-12-08 | 2018-04-21 | 錼創科技股份有限公司 | 發光二極體晶片 |
| CN106784223B (zh) * | 2016-12-22 | 2019-05-14 | 天津三安光电有限公司 | 发光二极管及其制作方法 |
| TWI626766B (zh) * | 2017-06-01 | 2018-06-11 | 錼創科技股份有限公司 | 發光元件 |
| CN115312646A (zh) * | 2019-01-17 | 2022-11-08 | 泉州三安半导体科技有限公司 | 一种半导体发光元件 |
| CN112152085B (zh) * | 2020-11-24 | 2021-02-12 | 度亘激光技术（苏州）有限公司 | 半导体结构的制备方法、半导体结构和半导体器件 |
| CN112885718B (zh) * | 2021-01-20 | 2022-07-05 | 厦门乾照光电股份有限公司 | 一种复合导电薄膜的制备方法 |
| KR102629307B1 (ko) * | 2022-04-26 | 2024-01-29 | 숭실대학교산학협력단 | 질화물 반도체 소자의 제조방법 |
| CN115458647B (zh) * | 2022-10-31 | 2025-08-19 | 天津三安光电有限公司 | 一种垂直led芯片结构及其制造方法及发光装置 |
| KR102721221B1 (ko) * | 2023-05-30 | 2024-10-24 | 웨이브로드 주식회사 | 반도체 소자용 템플릿을 이용한 반도체 적층체 및 그 제조 방법 |
| KR102722735B1 (ko) * | 2023-07-21 | 2024-10-28 | 웨이브로드 주식회사 | 마이크로 led 디스플레이용 칩 온 웨이퍼의 제조 방법 |
| KR102740260B1 (ko) * | 2023-12-19 | 2024-12-10 | 웨이브로드 주식회사 | 마이크로 led 디스플레이용 칩 온 웨이퍼의 제조 방법 |
| CN119108471B (zh) * | 2024-11-08 | 2025-06-27 | 南昌凯迅光电股份有限公司 | 一种红光led芯片及其制作方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5606572A (en) * | 1994-03-24 | 1997-02-25 | Vixel Corporation | Integration of laser with photodiode for feedback control |
| US20020079500A1 (en) * | 2000-12-22 | 2002-06-27 | Heng Liu | Light emitting diode |
| US20090108286A1 (en) * | 2006-10-17 | 2009-04-30 | Epistar Corporation | Optoelectronic device |
| US20090218941A1 (en) * | 2005-02-23 | 2009-09-03 | Pioneer Corporation | Organic semiconductor light-emitting device and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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