JP5610930B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5610930B2
JP5610930B2 JP2010191998A JP2010191998A JP5610930B2 JP 5610930 B2 JP5610930 B2 JP 5610930B2 JP 2010191998 A JP2010191998 A JP 2010191998A JP 2010191998 A JP2010191998 A JP 2010191998A JP 5610930 B2 JP5610930 B2 JP 5610930B2
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Japan
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region
impurity region
impurity
semiconductor
depletion layer
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JP2010191998A
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English (en)
Japanese (ja)
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JP2012049428A5 (enExample
JP2012049428A (ja
Inventor
知秀 寺島
知秀 寺島
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2010191998A priority Critical patent/JP5610930B2/ja
Priority to US13/090,504 priority patent/US8466515B2/en
Priority to KR1020110070194A priority patent/KR101209564B1/ko
Priority to DE102011079307.0A priority patent/DE102011079307B4/de
Priority to CN201110212741.2A priority patent/CN102386231B/zh
Publication of JP2012049428A publication Critical patent/JP2012049428A/ja
Priority to US13/886,399 priority patent/US8878239B2/en
Publication of JP2012049428A5 publication Critical patent/JP2012049428A5/ja
Application granted granted Critical
Publication of JP5610930B2 publication Critical patent/JP5610930B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/421—Insulated-gate bipolar transistors [IGBT] on insulating layers or insulating substrates, e.g. thin-film IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2010191998A 2010-08-30 2010-08-30 半導体装置 Active JP5610930B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010191998A JP5610930B2 (ja) 2010-08-30 2010-08-30 半導体装置
US13/090,504 US8466515B2 (en) 2010-08-30 2011-04-20 Semiconductor device
KR1020110070194A KR101209564B1 (ko) 2010-08-30 2011-07-15 반도체장치
DE102011079307.0A DE102011079307B4 (de) 2010-08-30 2011-07-18 Halbleitervorrichtung
CN201110212741.2A CN102386231B (zh) 2010-08-30 2011-07-19 半导体装置
US13/886,399 US8878239B2 (en) 2010-08-30 2013-05-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010191998A JP5610930B2 (ja) 2010-08-30 2010-08-30 半導体装置

Publications (3)

Publication Number Publication Date
JP2012049428A JP2012049428A (ja) 2012-03-08
JP2012049428A5 JP2012049428A5 (enExample) 2013-05-09
JP5610930B2 true JP5610930B2 (ja) 2014-10-22

Family

ID=45566353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010191998A Active JP5610930B2 (ja) 2010-08-30 2010-08-30 半導体装置

Country Status (5)

Country Link
US (2) US8466515B2 (enExample)
JP (1) JP5610930B2 (enExample)
KR (1) KR101209564B1 (enExample)
CN (1) CN102386231B (enExample)
DE (1) DE102011079307B4 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011238771A (ja) * 2010-05-11 2011-11-24 Hitachi Ltd 半導体装置
JP5762353B2 (ja) * 2012-05-01 2015-08-12 三菱電機株式会社 半導体装置
CN104717555B (zh) * 2013-12-11 2018-01-02 华为技术有限公司 视频码流的获取方法及装置
US20230207568A1 (en) * 2021-12-23 2023-06-29 IceMos Technology Limited Semiconductor Device and Method for Power MOSFET on Partial SOI

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3059442B2 (ja) * 1988-11-09 2000-07-04 株式会社日立製作所 半導体記憶装置
JPH04259259A (ja) * 1991-02-14 1992-09-14 Nippondenso Co Ltd 薄膜ｓｏｉ構造のｍｉｓトランジスタ
JP2739018B2 (ja) 1992-10-21 1998-04-08 三菱電機株式会社 誘電体分離半導体装置及びその製造方法
JP3588882B2 (ja) * 1995-12-08 2004-11-17 富士電機デバイステクノロジー株式会社 誘電体分離基板の製造方法
US7098506B2 (en) * 2000-06-28 2006-08-29 Renesas Technology Corp. Semiconductor device and method for fabricating the same
JP2001025235A (ja) 1999-07-07 2001-01-26 Mitsubishi Electric Corp 駆動装置および電力変換装置
JP2001094094A (ja) * 1999-09-21 2001-04-06 Hitachi Ltd 半導体装置およびその製造方法
JP4058232B2 (ja) * 2000-11-29 2008-03-05 株式会社ルネサステクノロジ 半導体装置及びｉｃカード
JP4477886B2 (ja) * 2003-04-28 2010-06-09 株式会社ルネサステクノロジ 半導体装置の製造方法
JP4889072B2 (ja) 2003-12-19 2012-02-29 オンセミコンダクター・トレーディング・リミテッド 半導体装置
JP4618629B2 (ja) * 2004-04-21 2011-01-26 三菱電機株式会社 誘電体分離型半導体装置
JP4629490B2 (ja) 2005-05-09 2011-02-09 三菱電機株式会社 誘電体分離型半導体装置
JP4984579B2 (ja) * 2006-03-10 2012-07-25 株式会社日立製作所 高耐圧半導体集積回路装置
EP1863081A3 (en) 2006-03-10 2008-03-05 Hitachi, Ltd. Dielectric material separated-type, high breakdown voltage semiconductor circuit device, and production method thereof
JP2008311300A (ja) * 2007-06-12 2008-12-25 Toyota Motor Corp パワー半導体装置、パワー半導体装置の製造方法、およびモータ駆動装置
JP5105060B2 (ja) * 2007-11-16 2012-12-19 三菱電機株式会社 半導体装置およびその製造方法
JP2009238980A (ja) * 2008-03-27 2009-10-15 Hitachi Ltd 半導体装置及びその製造方法
JP4797203B2 (ja) 2008-12-17 2011-10-19 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
US20140015004A1 (en) 2014-01-16
US8466515B2 (en) 2013-06-18
US20120049240A1 (en) 2012-03-01
CN102386231A (zh) 2012-03-21
KR101209564B1 (ko) 2012-12-07
KR20120022056A (ko) 2012-03-09
US8878239B2 (en) 2014-11-04
JP2012049428A (ja) 2012-03-08
DE102011079307B4 (de) 2015-08-13
DE102011079307A1 (de) 2012-03-01
CN102386231B (zh) 2014-06-18

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