CN102386231B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN102386231B
CN102386231B CN201110212741.2A CN201110212741A CN102386231B CN 102386231 B CN102386231 B CN 102386231B CN 201110212741 A CN201110212741 A CN 201110212741A CN 102386231 B CN102386231 B CN 102386231B
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China
Prior art keywords
extrinsic region
impurity region
type impurity
impurity concentration
conductivity type
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CN201110212741.2A
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English (en)
Chinese (zh)
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CN102386231A (zh
Inventor
寺岛知秀
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN102386231A publication Critical patent/CN102386231A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/421—Insulated-gate bipolar transistors [IGBT] on insulating layers or insulating substrates, e.g. thin-film IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN201110212741.2A 2010-08-30 2011-07-19 半导体装置 Active CN102386231B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-191998 2010-08-30
JP2010191998A JP5610930B2 (ja) 2010-08-30 2010-08-30 半導体装置

Publications (2)

Publication Number Publication Date
CN102386231A CN102386231A (zh) 2012-03-21
CN102386231B true CN102386231B (zh) 2014-06-18

Family

ID=45566353

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110212741.2A Active CN102386231B (zh) 2010-08-30 2011-07-19 半导体装置

Country Status (5)

Country Link
US (2) US8466515B2 (enExample)
JP (1) JP5610930B2 (enExample)
KR (1) KR101209564B1 (enExample)
CN (1) CN102386231B (enExample)
DE (1) DE102011079307B4 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011238771A (ja) * 2010-05-11 2011-11-24 Hitachi Ltd 半導体装置
JP5762353B2 (ja) * 2012-05-01 2015-08-12 三菱電機株式会社 半導体装置
CN104717555B (zh) * 2013-12-11 2018-01-02 华为技术有限公司 视频码流的获取方法及装置
US20230207568A1 (en) * 2021-12-23 2023-06-29 IceMos Technology Limited Semiconductor Device and Method for Power MOSFET on Partial SOI

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3588882B2 (ja) * 1995-12-08 2004-11-17 富士電機デバイステクノロジー株式会社 誘電体分離基板の製造方法
CN1630100A (zh) * 2003-12-19 2005-06-22 三洋电机株式会社 半导体装置
CN101034709A (zh) * 2006-03-10 2007-09-12 株式会社日立制作所 高耐压半导体集成电路装置、电介质分离型半导体装置
CN101388409A (zh) * 2004-04-21 2009-03-18 三菱电机株式会社 电介质分离型半导体装置
CN101436599A (zh) * 2007-11-16 2009-05-20 三菱电机株式会社 半导体装置及其制造方法
EP2105962A2 (en) * 2008-03-27 2009-09-30 Hitachi Ltd. Semiconductor device and production method thereof
CN101689546A (zh) * 2007-06-12 2010-03-31 丰田自动车株式会社 功率半导体装置、功率半导体装置的制造方法以及马达驱动装置
CN101752366A (zh) * 2008-12-17 2010-06-23 三菱电机株式会社 半导体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3059442B2 (ja) * 1988-11-09 2000-07-04 株式会社日立製作所 半導体記憶装置
JPH04259259A (ja) * 1991-02-14 1992-09-14 Nippondenso Co Ltd 薄膜ｓｏｉ構造のｍｉｓトランジスタ
JP2739018B2 (ja) 1992-10-21 1998-04-08 三菱電機株式会社 誘電体分離半導体装置及びその製造方法
US7098506B2 (en) * 2000-06-28 2006-08-29 Renesas Technology Corp. Semiconductor device and method for fabricating the same
JP2001025235A (ja) 1999-07-07 2001-01-26 Mitsubishi Electric Corp 駆動装置および電力変換装置
JP2001094094A (ja) * 1999-09-21 2001-04-06 Hitachi Ltd 半導体装置およびその製造方法
JP4058232B2 (ja) * 2000-11-29 2008-03-05 株式会社ルネサステクノロジ 半導体装置及びｉｃカード
JP4477886B2 (ja) * 2003-04-28 2010-06-09 株式会社ルネサステクノロジ 半導体装置の製造方法
JP4629490B2 (ja) 2005-05-09 2011-02-09 三菱電機株式会社 誘電体分離型半導体装置
EP1863081A3 (en) 2006-03-10 2008-03-05 Hitachi, Ltd. Dielectric material separated-type, high breakdown voltage semiconductor circuit device, and production method thereof

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3588882B2 (ja) * 1995-12-08 2004-11-17 富士電機デバイステクノロジー株式会社 誘電体分離基板の製造方法
CN1630100A (zh) * 2003-12-19 2005-06-22 三洋电机株式会社 半导体装置
CN101388409A (zh) * 2004-04-21 2009-03-18 三菱电机株式会社 电介质分离型半导体装置
CN101034709A (zh) * 2006-03-10 2007-09-12 株式会社日立制作所 高耐压半导体集成电路装置、电介质分离型半导体装置
CN101689546A (zh) * 2007-06-12 2010-03-31 丰田自动车株式会社 功率半导体装置、功率半导体装置的制造方法以及马达驱动装置
CN101436599A (zh) * 2007-11-16 2009-05-20 三菱电机株式会社 半导体装置及其制造方法
EP2105962A2 (en) * 2008-03-27 2009-09-30 Hitachi Ltd. Semiconductor device and production method thereof
CN101752366A (zh) * 2008-12-17 2010-06-23 三菱电机株式会社 半导体装置

Also Published As

Publication number Publication date
US20140015004A1 (en) 2014-01-16
US8466515B2 (en) 2013-06-18
US20120049240A1 (en) 2012-03-01
CN102386231A (zh) 2012-03-21
KR101209564B1 (ko) 2012-12-07
KR20120022056A (ko) 2012-03-09
JP5610930B2 (ja) 2014-10-22
US8878239B2 (en) 2014-11-04
JP2012049428A (ja) 2012-03-08
DE102011079307B4 (de) 2015-08-13
DE102011079307A1 (de) 2012-03-01

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